This document summarizes research on estimating the work function of bismuth-doped zinc oxide thin films. Key points:
- Bismuth-doped ZnO thin films were deposited on p-type and n-type silicon substrates using sol-gel spin coating. Hot probe measurements confirmed the films were p-type.
- Heterojunctions of p-ZnO/p-Si and p-ZnO/n-Si were fabricated and current-voltage characteristics measured. The reverse saturation current and barrier height were calculated from the I-V plots.
- Using the barrier height and models for metal-semiconductor contacts, the work function of the ZnO films was estimated to
The present study investigates on the single walled carbon nano tube (CNT) based
transistor and with comparative analysis of Zinc Oxide (ZnO) and Aluminium Oxide
(Al2O3) as gate dielectric films. Structural properties of these gate dielectric films
were analysed and reported. Array network of single walled carbon nanotube
(SWCNT) was formed as a channel in field effect transistor (FET) by drop casting
method. At room temperature gate dielectric (ZnO and Al2O3) films were deposited by
using pulsed laser deposition. Various electrical parameters were analysed for the
fabricated SWCNT/Al2O3 and SWCNT/ZnO FET’s. The achieved threshold voltage
(VTH), ION and IOFF are 0.6 Volts, -2.88mA and -2.19mA was observed for CNT/Al2O3
FET and 0.2Volts, -2.19mA and -4.99mA was observed for CNT/ZnO FET
respectively
The present study investigates on the single walled carbon nano tube (CNT) based
transistor and with comparative analysis of Zinc Oxide (ZnO) and Aluminium Oxide
(Al2O3) as gate dielectric films. Structural properties of these gate dielectric films
were analysed and reported. Array network of single walled carbon nanotube
(SWCNT) was formed as a channel in field effect transistor (FET) by drop casting
method. At room temperature gate dielectric (ZnO and Al2O3) films were deposited by
using pulsed laser deposition. Various electrical parameters were analysed for the
fabricated SWCNT/Al2O3 and SWCNT/ZnO FET’s. The achieved threshold voltage
(VTH), ION and IOFF are 0.6 Volts, -2.88mA and -2.19mA was observed for CNT/Al2O3
FET and 0.2Volts, -2.19mA and -4.99mA was observed for CNT/ZnO FET
respectively
Shulze - Surface and Thin Film Characterization of Superconducting Multilayer...thinfilmsworkshop
http://www.surfacetreatments.it/thinfilms
Surface and Thin Film Characterization of Superconducting Multilayer films for application in RF (Roland Schulze - 30')
Speaker: Roland Schulze - Los Alamos National Laboratory | Duration: 30 min.
Abstract
The use of multilayer ultra-thin films on the interior surfaces of Nb superconducting RF cavities shows great promise in substantially improving the performance characteristics of superconducting RF cavities into the 100 MV/m range by increasing the RF critical magnetic field, HRF, through careful choice of new materials and thin film structures. However, there are substantial materials science challenges associated with producing such complex film structures, particularly for conformal application of uniform thin films on the interior surfaces of RF cavities. Here we present surface and thin film analysis of ultra-thin films of two candidate materials, MgB2 and NbN superconductors, deposited through several different methods, along with multilayers produced with alternating superconductor and dielectric films. We report on the analysis methods and techniques, using primarily x-ray photoelectron spectroscopy and Auger spectroscopy with ion sputter depth profiling, and describe results from variety of thin film samples. The materials stability, microstructure, chemistry, and thin film morphology are highly dependent on methods and parameters used in the thin film deposition. From our analysis, important factors for producing quality superconducting and dielectric films include chemical stoichiometry, impurity content, deposition temperature, substrate choice and conditioning, choice of dielectric material, and the nature of the thin film interfaces. These factors will be discussed in the context of the production methods used for these ultra-thin superconducting films.
Zhimao ni growth of mg b2 films on metallic substrates by hpcvdthinfilmsworkshop
Authors: Zhimao Ni, Fa He, Kexin Liu and Qingrong Feng
MgB2, due to its high transition temperature of ~40K and absence of weak links between grains, is a candidate material for superconducting radio-frequency (RF) cavities for future particle accelerators. Peking University has developed a HPCVD method for MgB2 fabricating on metallic substrates. We have grown MgB2 films on the substrates of Cu, Nb and Mo[1] successfully. Recently, for better quality of MgB2 film, we tried to fabricate MgB2 film on Cu substrate which was coated a thin film of Mo on the surface. We also tried to obtain the large-area MgB2 film (2-inches in diameter) on metallic substrate with good uniform for RF measurement. The method and results of recent experiments will be presented.
2011 a novel surface activation method for ni au electroless plating of acryl...Alexandra Bautista
The engineering plastics have vast applications in electronic products.
Demands for direct metallization on non-conducting plastics have been
vigorously increasing. In electroless plating, metallization can be carried
out evenly on non-conducting substrates. Electroless plating is considered
the most effective and promising metallization method.
Xiaoxing Xi - Magnesium Diboride Thin Films for Superconducting RF Cavitiesthinfilmsworkshop
http://www.surfacetreatments.it/thinfilms
Magnesium Diboride Thin Films for superconducting RF cavities (Xiaoxing Xi - 40')
Speaker: Xiaoxing Xi - Temple University | Duration: 40 min.
Abstract
MgB2 has a Tc of 40 K, a low residual resistivity, and a high Hc . RF cavities coated with MgB2 films have the potential for a higher Q and gradient than Nb cavities with an operation temperature of 4.2 K or higher. At Temple University, we have started a project to study issues related to the application of MgB2 to RF cavities, and to coat single-cell RF cavities with MgB2 film for characterization by the collaborators in accelerator-compatible environment. The key technical thrust of this project is the deposition of high quality clean MgB2 films and coatings using a hybrid physical-chemical vapor deposition technique. I will review the progress to date in this project.
Introducing higher dielectric constant (k > 10) insulators [mainly transition metal (TM) oxides] is therefore indispensable for the 70 nm technology node and beyond
TM silicates such as HfSiOx have been preferred because they have better thermal stability compared to their oxides. The dielectric constant of TM silicates is less than TM oxides but higher than silicon oxide.
Pd-Substituted (La,Sr)CrO3 for Solid Oxide Fuel Cell AnodesEmmaReneeDutton
Presentation of independent honors research thesis (June 2011) for Bachelor of Science in Materials Science & Engineering at Northwestern University.
Phillips - Atomic Layer Deposition of NbN Thin Films for Superconducting Radi...thinfilmsworkshop
http://www.surfacetreatments.it/thinfilms
Atomic Layer Deposition of NbN thin films for SRF applications (Larry Phillips - 15')
Speaker: Larry Phillips - Jefferson Lab - Newport News - Virginia | Duration: 15 min.
Abstract
Niobium Nitride is a 17K superconductor investigated since early eighthies for Superconducting Radiofrequency applications.
Atomic Layer deposition is instead a technique that only recently starts to be considered for industrial applications.
Characterization of Aluminum Doped Nanostructured ZnO/p-Si Heterojunctionstheijes
In this study we investigated electrical and optical properties of heterojunctions made of aluminum doped Zinc oxide (ZnO) nanorods and 4% Boron doped p-type silicon (p-Si). ZnOnanorods were grown by a chemical bath deposition (CBD) techniqueon a seed layer of ZnOsputtered on p-Si. Aluminum doping was achieved by incorporating 0-20% of aluminum nitrate in the chemical bath precursor solution. Room temperature photoluminescence showed a systematic decrease in the defect peak at 560 nm with increasing doping. Band gap was measured using UV-VIS spectroscopy shows that the band gap increased from 3.31 eV to 3.58 eV as the doping is varied from 0-20%. This increase in band gap could be due to the Burstein-Moss effect previously observed in heavily doped semiconductors. In addition, we also performed current-voltage (I-V), capacitancevoltage(C-V) measurements on Aluminum doped ZnO/p-Si nanorods samples under both dark and illumination conditions. I-V characteristics showed a good rectifying behavior under dark and illumination conditions. The saturation current, diode ideality factor, carrier concentrations, built in potential, and barrier height were calculated from I-V and C-V measurements for each sample. We will discuss the implications of the variations in band gap, I-V, and C-V measurements with variation in aluminum doping
The Evaluation of p-type doping in ZnO taking Co as dopantIOSR Journals
P-type doping is excessively difficult in wide-band gap semiconductors, such as GaN, ZnSe, and
indeed ZnO. Practically it is very difficult to obtain stable and true p-type ZnO. Under standard conditions there
are reports on decaying or even completely absent p-type conductivity. Several hypotheses have been
formulated to explain this unusual behaviour. The commonly accepted theory is that the elements assume
undesired (non-substitutional) positions or form complexes, resulting in self-compensation of the p-type
conductivity. Note that p-dopants can be compensated by low energy native defects, such as Zni or VO, or
background impurities, such as aforementioned H. Deep impurity levels can cause significant resistance to the
formation of a shallow acceptor level. In this work the p-type doped Zno based samples are prepared where
incorporation of Co into the ZnO crystal lattice is done and various measurements like Sheet resistivity, Hall
Voltage, Hall mobility and 2d hole concentration are made. From the results it has been clearly found that the
p-type doping takes place successfully and can be used for various future applications
Shulze - Surface and Thin Film Characterization of Superconducting Multilayer...thinfilmsworkshop
http://www.surfacetreatments.it/thinfilms
Surface and Thin Film Characterization of Superconducting Multilayer films for application in RF (Roland Schulze - 30')
Speaker: Roland Schulze - Los Alamos National Laboratory | Duration: 30 min.
Abstract
The use of multilayer ultra-thin films on the interior surfaces of Nb superconducting RF cavities shows great promise in substantially improving the performance characteristics of superconducting RF cavities into the 100 MV/m range by increasing the RF critical magnetic field, HRF, through careful choice of new materials and thin film structures. However, there are substantial materials science challenges associated with producing such complex film structures, particularly for conformal application of uniform thin films on the interior surfaces of RF cavities. Here we present surface and thin film analysis of ultra-thin films of two candidate materials, MgB2 and NbN superconductors, deposited through several different methods, along with multilayers produced with alternating superconductor and dielectric films. We report on the analysis methods and techniques, using primarily x-ray photoelectron spectroscopy and Auger spectroscopy with ion sputter depth profiling, and describe results from variety of thin film samples. The materials stability, microstructure, chemistry, and thin film morphology are highly dependent on methods and parameters used in the thin film deposition. From our analysis, important factors for producing quality superconducting and dielectric films include chemical stoichiometry, impurity content, deposition temperature, substrate choice and conditioning, choice of dielectric material, and the nature of the thin film interfaces. These factors will be discussed in the context of the production methods used for these ultra-thin superconducting films.
Zhimao ni growth of mg b2 films on metallic substrates by hpcvdthinfilmsworkshop
Authors: Zhimao Ni, Fa He, Kexin Liu and Qingrong Feng
MgB2, due to its high transition temperature of ~40K and absence of weak links between grains, is a candidate material for superconducting radio-frequency (RF) cavities for future particle accelerators. Peking University has developed a HPCVD method for MgB2 fabricating on metallic substrates. We have grown MgB2 films on the substrates of Cu, Nb and Mo[1] successfully. Recently, for better quality of MgB2 film, we tried to fabricate MgB2 film on Cu substrate which was coated a thin film of Mo on the surface. We also tried to obtain the large-area MgB2 film (2-inches in diameter) on metallic substrate with good uniform for RF measurement. The method and results of recent experiments will be presented.
2011 a novel surface activation method for ni au electroless plating of acryl...Alexandra Bautista
The engineering plastics have vast applications in electronic products.
Demands for direct metallization on non-conducting plastics have been
vigorously increasing. In electroless plating, metallization can be carried
out evenly on non-conducting substrates. Electroless plating is considered
the most effective and promising metallization method.
Xiaoxing Xi - Magnesium Diboride Thin Films for Superconducting RF Cavitiesthinfilmsworkshop
http://www.surfacetreatments.it/thinfilms
Magnesium Diboride Thin Films for superconducting RF cavities (Xiaoxing Xi - 40')
Speaker: Xiaoxing Xi - Temple University | Duration: 40 min.
Abstract
MgB2 has a Tc of 40 K, a low residual resistivity, and a high Hc . RF cavities coated with MgB2 films have the potential for a higher Q and gradient than Nb cavities with an operation temperature of 4.2 K or higher. At Temple University, we have started a project to study issues related to the application of MgB2 to RF cavities, and to coat single-cell RF cavities with MgB2 film for characterization by the collaborators in accelerator-compatible environment. The key technical thrust of this project is the deposition of high quality clean MgB2 films and coatings using a hybrid physical-chemical vapor deposition technique. I will review the progress to date in this project.
Introducing higher dielectric constant (k > 10) insulators [mainly transition metal (TM) oxides] is therefore indispensable for the 70 nm technology node and beyond
TM silicates such as HfSiOx have been preferred because they have better thermal stability compared to their oxides. The dielectric constant of TM silicates is less than TM oxides but higher than silicon oxide.
Pd-Substituted (La,Sr)CrO3 for Solid Oxide Fuel Cell AnodesEmmaReneeDutton
Presentation of independent honors research thesis (June 2011) for Bachelor of Science in Materials Science & Engineering at Northwestern University.
Phillips - Atomic Layer Deposition of NbN Thin Films for Superconducting Radi...thinfilmsworkshop
http://www.surfacetreatments.it/thinfilms
Atomic Layer Deposition of NbN thin films for SRF applications (Larry Phillips - 15')
Speaker: Larry Phillips - Jefferson Lab - Newport News - Virginia | Duration: 15 min.
Abstract
Niobium Nitride is a 17K superconductor investigated since early eighthies for Superconducting Radiofrequency applications.
Atomic Layer deposition is instead a technique that only recently starts to be considered for industrial applications.
Characterization of Aluminum Doped Nanostructured ZnO/p-Si Heterojunctionstheijes
In this study we investigated electrical and optical properties of heterojunctions made of aluminum doped Zinc oxide (ZnO) nanorods and 4% Boron doped p-type silicon (p-Si). ZnOnanorods were grown by a chemical bath deposition (CBD) techniqueon a seed layer of ZnOsputtered on p-Si. Aluminum doping was achieved by incorporating 0-20% of aluminum nitrate in the chemical bath precursor solution. Room temperature photoluminescence showed a systematic decrease in the defect peak at 560 nm with increasing doping. Band gap was measured using UV-VIS spectroscopy shows that the band gap increased from 3.31 eV to 3.58 eV as the doping is varied from 0-20%. This increase in band gap could be due to the Burstein-Moss effect previously observed in heavily doped semiconductors. In addition, we also performed current-voltage (I-V), capacitancevoltage(C-V) measurements on Aluminum doped ZnO/p-Si nanorods samples under both dark and illumination conditions. I-V characteristics showed a good rectifying behavior under dark and illumination conditions. The saturation current, diode ideality factor, carrier concentrations, built in potential, and barrier height were calculated from I-V and C-V measurements for each sample. We will discuss the implications of the variations in band gap, I-V, and C-V measurements with variation in aluminum doping
The Evaluation of p-type doping in ZnO taking Co as dopantIOSR Journals
P-type doping is excessively difficult in wide-band gap semiconductors, such as GaN, ZnSe, and
indeed ZnO. Practically it is very difficult to obtain stable and true p-type ZnO. Under standard conditions there
are reports on decaying or even completely absent p-type conductivity. Several hypotheses have been
formulated to explain this unusual behaviour. The commonly accepted theory is that the elements assume
undesired (non-substitutional) positions or form complexes, resulting in self-compensation of the p-type
conductivity. Note that p-dopants can be compensated by low energy native defects, such as Zni or VO, or
background impurities, such as aforementioned H. Deep impurity levels can cause significant resistance to the
formation of a shallow acceptor level. In this work the p-type doped Zno based samples are prepared where
incorporation of Co into the ZnO crystal lattice is done and various measurements like Sheet resistivity, Hall
Voltage, Hall mobility and 2d hole concentration are made. From the results it has been clearly found that the
p-type doping takes place successfully and can be used for various future applications
International Journal of Engineering Research and Applications (IJERA) is an open access online peer reviewed international journal that publishes research and review articles in the fields of Computer Science, Neural Networks, Electrical Engineering, Software Engineering, Information Technology, Mechanical Engineering, Chemical Engineering, Plastic Engineering, Food Technology, Textile Engineering, Nano Technology & science, Power Electronics, Electronics & Communication Engineering, Computational mathematics, Image processing, Civil Engineering, Structural Engineering, Environmental Engineering, VLSI Testing & Low Power VLSI Design etc.
Zno and znopbs heterojunction photo electrochemical cellseSAT Journals
Abstract Photo Electrochemical Cell (PEC) can also be used for splitting of water into hydrogen and Oxygen. Here, ZnO nanorod PEC has been prepared in hydrothermal method and ZnO/PbS quantum dot PEC has been prepared by hydrothermal method and chemical bath deposition method. UV-Visible spectroscopy has been observed. Flat band voltage, bandwidth and majority charge carriers have been calculated from Mott-Schottky. Impedance variation at semiconductor and electrolyte junction has been observed with Electrochemical Impedance Spectroscopy (EIS). Keywords: Hydrothermal, Chemical bath, ZnO/PbS, UV-Vis, Mott-Schottky, EIS.
Effects of Zno on electrical properties of Polyaniline CompositesIJERA Editor
In the present investigation, Polyaniline / Zinc oxide with various weight percentage of Zinc oxide (10%, 20%, 30, 40% and 50%) were synthesized by in-situ polymerization method. The prepared composites were characterized by X-Ray diffraction (XRD), Scanning Electron Microscopy (SEM) and Fourier Infrared Spectroscopy (FTIR). The dc conductivity of the samples was measured as a function of temperature in the range 30-180oC and it was found that increasing the concentration of ZnO particles increases the conductivity. Ac conductivity of the composites was studied with respect to frequency.
Effects of Zno on electrical properties of Polyaniline CompositesIJERA Editor
In the present investigation, Polyaniline / Zinc oxide with various weight percentage of Zinc oxide (10%, 20%, 30, 40% and 50%) were synthesized by in-situ polymerization method. The prepared composites were characterized by X-Ray diffraction (XRD), Scanning Electron Microscopy (SEM) and Fourier Infrared Spectroscopy (FTIR). The dc conductivity of the samples was measured as a function of temperature in the range 30-180oC and it was found that increasing the concentration of ZnO particles increases the conductivity. Ac conductivity of the composites was studied with respect to frequency
Improvement Structural and Optical Properties of ZnO/ PVA Nanocompositesiosrjce
IOSR Journal of Applied Physics (IOSR-JAP) is a double blind peer reviewed International Journal that provides rapid publication (within a month) of articles in all areas of physics and its applications. The journal welcomes publications of high quality papers on theoretical developments and practical applications in applied physics. Original research papers, state-of-the-art reviews, and high quality technical notes are invited for publications.
Preparation and Properties of Nanocrystalline Zinc Oxide Thin Filmsijtsrd
Metal oxide is highly important material which possesses many unique optical and electrical properties for applications in many areas such as Solar cells, Gas sensors and so on. With the development of research and applications of Metal oxide thin films, research results are verified that the morphology of Metal oxide thin films are plays an important role in applications of these films. Variety of morphologies, complex structure has been developed by physical or chemical methods. However the work on controlled growth of these films is still in developing state. Therefore in present work we deposited ZnS and ZnO metal oxides thin films on different substrates by Chemical Bath Deposition Technique. Structural, Surface Morphology and Optical properties of as deposited films were investigated by XRD, SEM, and UV VIS Spectrophotometer. The band gap is also calculated from the equation relating absorption co efficient to wavelength. The band gap indicates the film is transmitting within the visible range and the band gaps changes because of the grain size of the films. We also observed that, the change in preparative parameters affects the deposition rate of thin films. From the observation, it is clear that the growth rate increases as the deposition temperature, increases. S. S. Kawar "Preparation and Properties of Nanocrystalline Zinc Oxide Thin Films" Published in International Journal of Trend in Scientific Research and Development (ijtsrd), ISSN: 2456-6470, Volume-4 | Issue-4 , June 2020, URL: https://www.ijtsrd.com/papers/ijtsrd31623.pdf Paper Url :https://www.ijtsrd.com/physics/nanotechnology/31623/preparation-and-properties-of-nanocrystalline-zinc-oxide-thin-films/s-s-kawar
The complex-structured boron doped amorphous carbon were prepared from natural hydrocarbon palm oil precursor deposited by negative bias substrate voltage of 0 V and -20 V are presented. Field-emission scanning electron microscopy (FESEM) revealed the carbon films were very complex-structured. The open circuit voltage (Voc), current density (Jsc), fill factor (FF) and efficiency (η) of Au/a-C:B/n-Si/Au heterojunction solar cell device at 0 V were approximately 254 mV, 0.2324 mA/cm2, 0.241, and 0.0141%, respectively. Meanwhile, the Voc, Jsc, FF and η of Au/a-C:B/n-Si/Au heterojunction solar cell device at -20 V were 426 mV, 5.351mA/cm2, 0.243, and 0.553%, respectively. The results showed the precursor palm oil and negative substrate DC bias of -20 V can be used as an alternative precursor and technique for fabricated heterojunction solar cell device.
Studies on in-Doped Zno Transparent Conducting thin FilmsIJRESJOURNAL
ABSTRACT: In this manuscript we have investigated the influences of indium dopants on zinc oxide (ZnO) thin films regarding physico-chemical properties for application in modern conducting devices. As a starting material, Indium (III) chloride, and Zn(CH3COO)2⋅2H2O were used. The complex TSDC spectrum was obtained by submitting the sample to a constant electrical field Ep = 10M V/m during 2 min at a varing polarization temperature of Tmax = 1500C. A minimal sheet resistance with electrical resistivity as low in the range of 10-3 Ω·cm was found for this thin film.
Similar to WORK FUNCTION ESTIMATION OF BISMUTH DOPED ZNO THIN FILM (20)
ON MODEL OF MANUFACTURING OF A BAND-PASS FILTER TO INCREASE INTEGRATION RATE ...antjjournal
In this paper we introduce an approach to increase integration rate of field-effect heterotransistors in the
framework of band-pass filter. In the framework of the approach we consider a heterostructure with special configuration. Several specific areas of the heterostructure should be doped by diffusion or ion implantation. Annealing of dopant and/or radiation defects should be optimized.
A MODEL OF MANUFACTURING OF A MOSFETFILTER WITH ACCOUNT MISMATCH-INDUCED STRE...antjjournal
In the present time several actual problems of the solid state electronics (such as increasing of
performance, reliability and density of elements of integrated circuits: diodes, field-effect and bipolar
transistors) are intensively solving. To increase the performance of these devices it is attracted an interest
determination of materials with higher values of charge carriers mobility. One way to decrease dimensions
of elements of integrated circuits is manufacturing them in thin film heterostructures. In this paper we
introduce an approach to increase density of field-effect transistors in the framework of a metal-oxidesemiconductor field-effect transistor filter. In the framework of the approach we consider manufacturing of
the above filter in a heterostructure with specific configuration. Several appropriate areas of the
considered heterostructure should be doped by diffusion or by ion implantation. After the doping the
considered dopant and radiation defects should be annealed in the framework oh the recently considered
optimized scheme. We also consider an approach to decrease value of mismatch-induced stress in the
considered heterostructure. The decreasing of the mismatch-induced stress could be decreased by
radiation processing of appropriate areas of heterostructure. We introduce an analytical approach to
analyze mass and heat transport in heterostructures during manufacturing of integrated circuits with
account mismatch-induced stress.
On Optimization of Manufacturing of Field-Effect Heterotransistors Frame-work...antjjournal
We consider an approach for increasing density of field-effect heterotransistors in a single-stage multi-path operational amplifier. At the same time one can obtain decreasing of dimensions of the above transistors. Dimensions of the elements could be decreased by manufacturing of these elements in a heterostructure with specific structure. The manufacturing is doing by doping of required areas of the heterostructure by diffusion or ion implantation with future optimization of annealing of dopant and/or radiation defects.
Performance Enhancement of Single Slope Solar Still Using Nano-Particles Mixe...antjjournal
ABSTRACT
The present paper reports on an experiment to improve the productivity of solar still using nano-particles. Solar distillation is a relatively simple treatment of brackish or impure water. In this solar energy is used to evaporate water then this vapour is condensed as pure water. This process removes salts and other impurities. Latest trend to improve the efficiency of the solar still is use of nano-particles like metal oxides. These particles increase surface area of absorption to solar radiation. In this work the Al2O3 nanoparticles mixed black paint is used to enhance the productivity of solar still. The solar radiations are transmitted through the glass cover and captured by a black painted inner bottom surface of the solar still. Water absorbs the heat and is converted into vapour within the chamber of the solar still.Single slop solar still is used from past decades but in this study effect of nano-particles on productivity of solar still is analyzed. Experimental work is performed for the single slope solar still (SS-SS) under climatic conditions of Jaipur. The use of the nano-particles mixed with black paint increases the temperature of the solar still basin. The productivity and efficiency of solar still at water depth 0.01 m with nano-particles are 3.48 litre and 38.65% respectively which are maximum values compared to water depths 0.02 m and 0.03 m. Results of the study gives 38.09% increment in productivity and 12.18% increment in thermal efficiency when nano-particles of size 50 nm to 100 nm mixed black paint used at water depth .01 m. To check the significance of difference in productivity of solar still with and without nano-particle mixed black paint, a paired t-Test is performed which is conforms that the productivity enhancement due to nano-particle mixed black paint is significant at 95% confidence interval.
KEYWORDS
Solar still, Distillation, Nano-particles, Productivity, TDS, P
Synthesis, Evaluation, Modeling and Simulation of Nano-Pore NAA Zeolite Membr...antjjournal
ABSTRACT
Zeolite membranes have uniform and molecular-sized pores that separate molecules based on the differences in the molecules’ adsorption and diffusion properties. Strong electrostatic interaction between ionic sites and water molecules (due to its highly polar nature) makes the zeolite NaA membrane very hydrophilic. Zeolite NaA membranes are thus well suited for the separation of liquid-phase mixtures by
pervaporation. In this study, experiments were conducted with various Ethanol–water mixtures (1–20 wt. %) at 25 °C. Total flux for Ethanol–water mixtures was found to vary from 0.331 to 0.229 kg/m2 .h with increasing Ethanol concentration from 1 to 20 wt.%. Ionic sites of the NaA zeolite matrix play a very important role in water transport through the membrane. These sites act both as water sorption and transport sites. Surface diffusion of water occurs in an activated fashion through these sites. The precise Nano-porous structure of the zeolite cage helps in a partial molecular sieving of the large solvent
molecules leading to high separation factors. A comparison between experimental flux and calculated flux using Stephan Maxwell (S.M.) correlation was made and a linear trend was found to exist for water flux through the membrane with Ethanol concentration. A comprehensive model also was proposed for the Ethanol/water pervaporation (PV) by Finite Element Method (FEM). The 2D model was masterfully capable of predicting water concentration distribution within both the membrane and the feed side of the pervaporation membrane module.
KEYWORDS
Nano pores; Pervaporation; Ethanol separation; Zeolite NaA membrane; FEM simulation
On Optimization of Manufacturing of Field-Effect Heterotransistors Frame-work...antjjournal
We consider an approach for increasing density of field-effect heterotransistors in a single-stage multi-path operational amplifier. At the same time one can obtain decreasing of dimensions of the above transistors.
Dimensions of the elements could be decreased by manufacturing of these elements in a heterostructure with specific structure. The manufacturing is doing by doping of required areas of the heterostructure by
diffusion or ion implantation with future optimization of annealing of dopant and/or radiation defects.
On Optimization of Manufacturing of Field-Effect Heterotransistors Frame-work...antjjournal
We consider an approach for increasing density of field-effect heterotransistors in a single-stage multi-path
operational amplifier. At the same time one can obtain decreasing of dimensions of the above transistors.
Dimensions of the elements could be decreased by manufacturing of these elements in a heterostructure
with specific structure. The manufacturing is doing by doping of required areas of the heterostructure by
diffusion or ion implantation with future optimization of annealing of dopant and/or radiation defects.
REVIEW OF NANO TECHNOLOGY DEVELOPMENT IN TEXTILE INDUSTRY AND THE ROLE OF R &...antjjournal
The development of technology in the world, especially nanotechnology has also penetrated into the textile
sector. The application of nanotechnology to textiles has given its own advantages compared to
conventional textile technology. Nano technology has provided several advantages, such as: textiles with
multiple functions, better quality, cheaper and environmentally friendly. Through the application of
nanotechnology, types of textiles can be produced for many different uses, ranging from textiles to
aerospace, aeronautic, automotive, sportwear, fire fighting, to defense and security such as parachutes,
bulletproof clothes, and others. Thus for the Indonesian textile industry, in order to be able to compete with
the textile industry from outside, it is also necessary to adjust to the development of global technology. The
role of R&D institutions and universities is very strategic to develop nanotechnology where the industry is
unable to do so given the shortage of human resources and research facilities.
REVIEW OF NANO TECHNOLOGY DEVELOPMENT IN TEXTILE INDUSTRY AND THE ROLE OF R &...antjjournal
The development of technology in the world, especially nanotechnology has also penetrated into the textile
sector. The application of nanotechnology to textiles has given its own advantages compared to
conventional textile technology. Nano technology has provided several advantages, such as: textiles with
multiple functions, better quality, cheaper and environmentally friendly. Through the application of
nanotechnology, types of textiles can be produced for many different uses, ranging from textiles to
aerospace, aeronautic, automotive, sportwear, fire fighting, to defense and security such as parachutes,
bulletproof clothes, and others. Thus for the Indonesian textile industry, in order to be able to compete with
the textile industry from outside, it is also necessary to adjust to the development of global technology. The
role of R&D institutions and universities is very strategic to develop nanotechnology where the industry is
unable to do so given the shortage of human resources and research facilities.
A NOVEL PRECURSOR IN PREPARATION AND CHARACTERIZATION OF NICKEL OXIDE (NIO) A...antjjournal
Synthesis of Nickel Oxide (NiO) nanoparticles and cobalt oxide (CO3O4) materials synthesis by aqueous chemical growth (ACG) Techniques. Oxide based material having a wide band gap, and suitable for optical devices,Optoelectronic devices, UV photodetector, and Light emitting diode LEDs. The analysis
and characterizationof Nickel Oxide (NiO) and cobalt oxide (CO3O4) nanoparticles by(1) X-ray diffraction (XRD), (2) Scanning electron microscopy (SEM), and (3) Ultraviolet–visible (UV–Vis) spectroscopy.
ON OPTIMIZATION OF MANUFACTURING OF FIELD EFFECT HETEROTRANSISTORS FRAMEWORK ...antjjournal
We consider an approach for increasing density of field-effect heterotransistors in a single-stage multi-path
operational amplifier. At the same time one can obtain decreasing of dimensions of the above transistors.
Dimensions of the elements could be decreased by manufacturing of these elements in a heterostructure
with specific structure. The manufacturing is doing by doping of required areas of the heterostructure by
diffusion or ion implantation with future optimization of annealing of dopant and/or radiation defects.
ON OPTIMIZATION OF MANUFACTURING OF FIELD EFFECT HETEROTRANSISTORS FRAMEWORK ...antjjournal
We consider an approach for increasing density of field-effect heterotransistors in a single-stage multi-path operational amplifier. At the same time one can obtain decreasing of
dimensions of the above transistors.Dimensions of the elements could be decreased by manufacturing of these elements in a heterostructure with specific structure. The manufacturing is doing by doping of required areas of the heterostructure by diffusion or ion implantation with future optimization of annealing of dopant and/or radiation defects.
AN APPROACH TO OPTIMIZE MANUFACTURE OF AN ACTIVE QUADRATURE SIGNAL GENERATOR ...antjjournal
In this paper we introduce an approach to increase density of field-effect transistors framework an active
quadrature signal generator. Framework the approach we consider manufacturing the generator in heterostructure
with specific configuration. Several required areas of the heterostructure should be doped by diffusion
or ion implantation. After that dopant and radiation defects should by annealed framework optimized
scheme. We also consider an approach to decrease value of mismatch-induced stress in the considered
heterostructure. We introduce an analytical approach to analyze mass and heat transport in heterostructures
during manufacturing of integrated circuits with account mismatch-induced stress.
SYNTHESIS, EVALUATION, MODELING AND SIMULATION OF NANO-PORE NAA ZEOLITE MEMBR...antjjournal
Zeolite membranes have uniform and molecular-sized pores that separate molecules based on the
differences in the molecules’ adsorption and diffusion properties. Strong electrostatic interaction between
ionic sites and water molecules (due to its highly polar nature) makes the zeolite NaA membrane very
hydrophilic. Zeolite NaA membranes are thus well suited for the separation of liquid-phase mixtures by
pervaporation. In this study, experiments were conducted with various Ethanol–water mixtures (1–20 wt.
%) at 25 °C. Total flux for Ethanol–water mixtures was found to vary from 0.331 to 0.229 kg/m2
.h with
increasing Ethanol concentration from 1 to 20 wt.%. Ionic sites of the NaA zeolite matrix play a very
important role in water transport through the membrane. These sites act both as water sorption and
transport sites. Surface diffusion of water occurs in an activated fashion through these sites. The precise
Nano-porous structure of the zeolite cage helps in a partial molecular sieving of the large solvent
molecules leading to high separation factors. A comparison between experimental flux and calculated flux
using Stephan Maxwell (S.M.) correlation was made and a linear trend was found to exist for water flux
through the membrane with Ethanol concentration. A comprehensive model also was proposed for the
Ethanol/water pervaporation (PV) by Finite Element Method (FEM). The 2D model was masterfully
capable of predicting water concentration distribution within both the membrane and the feed side of the
pervaporation membrane module.
ON APPROACH TO INCREASE DENSITY OF FIELD- EFFECT TRANSISTORS IN AN INVERTER C...antjjournal
In this paper we consider an approach to decrease dimensions of field-effect transistors framework invertors with increasing of their density. Framework the approach it is necessary to manufacture a
heterostructure, which consist of two layers. One of them includes into itself several sections. After manufacturing of the heterostructure these sections should be doped by diffusion or by ion implantation with future optimized annealing of dopant and/or radiation defects. To prognosis the technological process we consider an analytical approach, which gives a possibility to take into account variation of physical parameters in space and time. At the same time the approach gives a possibility to take into
account nonlinearity of mass and heat transport and to analyze the above transport without crosslinking solutions on interfaces between materials of heterostructure.
Advanced Nanoscience and Technology: An International Journal (ANTJ) antjjournal
Advanced Nanoscience and Technology: An International Journal (ANTJ) is a peer-reviewed, open access journal, addresses the impacts and challenges of Nanoscience and Technology. The journal documents practical and theoretical results which make a fundamental contribution for the development of Nanoscience and Technology.
Advanced Nanoscience and Technology: An International Journal (ANTJ) antjjournal
Advanced Nanoscience and Technology: An International Journal (ANTJ) is a peer-reviewed, open access journal, addresses
the impacts and challenges of Nanoscience and Technology. The journal documents practical and theoretical results which make
a fundamental contribution for the development of Nanoscience and Technology.
Advanced Nanoscience and Technology: An International Journal (ANTJ) antjjournal
Advanced Nanoscience and Technology: An International Journal (ANTJ) is a peer-reviewed, open access journal, addresses the impacts and challenges of Nanoscience and Technology. The journal documents practical and theoretical results which make a fundamental contribution for the development of Nanoscience and Technology
In the present work micromachining of PMMA was carried out using KrF excimer laser. Excimer laser pulse with a wavelength of 248 nm was generated with a coherent COMPexPro 110 excimer laser system.
A micro-hole of Ø150 μm was machined on PMMA substrate during the experimentation. The PMMA substrate was mounted on the translation stage. The PMMA substrates were ex-posed to different number of pulses (1, 2, 5, 10, 20, 50 and 100) at repetition rate of 2, 5 and 10 Hz respectively by keeping the pulse energy unchanged at 200 mJ. In the present experimentation, the effect of pulse repetition rate and
number of pulses on ablation depth has been investigated. The experimental results for micromachining
demonstrate ablation process as a photo-chemical mechanism. The results of the experimentation have
revealed that, ablation depth is directly proportional to pulse number & pulse repetition rate has no significant effects on the ablation depth.
ENHANCED ACTIVITY OF ANTIBIOTICS BY LIPOSOMAL DRUG DELIVERYantjjournal
Liposome are the most widely used and the most extensively marketed nano-formulation that is being manufactured by pharmaceutical industries. Liposome can be modified in different size and structure. Conjugation of ligend with liposome surface increase the target specificity and changes the pharmacokinetic distribution of encapsulated drug. Different methods of preparation can
produce different types of liposomes. Many marketed formulations are available as liposome and
has proved to be more useful than the conventional formulations. Antibiotics of different classes such as quinolones, aminoglycosides, beta-lactams, cephalosporins, retroviral, macrolides and polypeptides are associated with the shortcomings of drug toxicities, lower bioavailability as well
as bacterial resistance. A proper drug delivery system can circumvent these drawbacks. The liposome can prove to be a big stride towards abolishment of these drawbacks. The disadvantage associated with this novel delivery system should also be understood and prevented by means of proper scientific methods for a betterment of human health and society.
Sachpazis:Terzaghi Bearing Capacity Estimation in simple terms with Calculati...Dr.Costas Sachpazis
Terzaghi's soil bearing capacity theory, developed by Karl Terzaghi, is a fundamental principle in geotechnical engineering used to determine the bearing capacity of shallow foundations. This theory provides a method to calculate the ultimate bearing capacity of soil, which is the maximum load per unit area that the soil can support without undergoing shear failure. The Calculation HTML Code included.
Welcome to WIPAC Monthly the magazine brought to you by the LinkedIn Group Water Industry Process Automation & Control.
In this month's edition, along with this month's industry news to celebrate the 13 years since the group was created we have articles including
A case study of the used of Advanced Process Control at the Wastewater Treatment works at Lleida in Spain
A look back on an article on smart wastewater networks in order to see how the industry has measured up in the interim around the adoption of Digital Transformation in the Water Industry.
CFD Simulation of By-pass Flow in a HRSG module by R&R Consult.pptxR&R Consult
CFD analysis is incredibly effective at solving mysteries and improving the performance of complex systems!
Here's a great example: At a large natural gas-fired power plant, where they use waste heat to generate steam and energy, they were puzzled that their boiler wasn't producing as much steam as expected.
R&R and Tetra Engineering Group Inc. were asked to solve the issue with reduced steam production.
An inspection had shown that a significant amount of hot flue gas was bypassing the boiler tubes, where the heat was supposed to be transferred.
R&R Consult conducted a CFD analysis, which revealed that 6.3% of the flue gas was bypassing the boiler tubes without transferring heat. The analysis also showed that the flue gas was instead being directed along the sides of the boiler and between the modules that were supposed to capture the heat. This was the cause of the reduced performance.
Based on our results, Tetra Engineering installed covering plates to reduce the bypass flow. This improved the boiler's performance and increased electricity production.
It is always satisfying when we can help solve complex challenges like this. Do your systems also need a check-up or optimization? Give us a call!
Work done in cooperation with James Malloy and David Moelling from Tetra Engineering.
More examples of our work https://www.r-r-consult.dk/en/cases-en/
Student information management system project report ii.pdfKamal Acharya
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This presentation is about the working procedure of Shahjalal Fertilizer Company Limited (SFCL). A Govt. owned Company of Bangladesh Chemical Industries Corporation under Ministry of Industries.
WORK FUNCTION ESTIMATION OF BISMUTH DOPED ZNO THIN FILM
1. Advanced Nanoscience and Technology: An International Journal (ANTJ), Vol. 2, No.2/3, September 2016
DOI: 10.5121/antj.2016.2301 1
WORK FUNCTION ESTIMATION OF BISMUTH
DOPED ZNO THIN FILM
Brijesh Kumar Singh, Lucky Agarwal and Shweta Tripathi
Department of Electronics & Communication Engineering,
Motilal Nehru National Institute of Technology, Allahabad-211004, India
ABSTRACT
In this paper we report bismuth (Bi) doped ZnO based heterojunction devices. The p-type Bi doped ZnO
thin films have been deposited on n and p type silicon substrate using sol-gel spin coating method. The p-
type nature of the deposited Bi doped ZnO thin films have been analyzed by hot point probe method. The
electrical properties of the fabricated devices have been obtained from I-V characteristic measured using
semiconductor parameter analyzer. Finally, the work function of Bi doped ZnO has been estimated from
the electrical parameter obtained from I-V calculations.
KEYWORDS
Bi doped ZnO, P type ZnO, Sol-Gel, Work Function
1. INTRODUCTION
Innovative thinking and continuous modification have lead to the development of new generation
of semiconductor devices. As far as the future of the semiconductor devices is concerned, ZnO
has a major role to play in it as it is versatile and has interesting properties like resistivity control
over the range of 10−3
–10-5
Ω-cm, transparency in the visible range, high electrochemical
stability, direct band gap (3.3 eV), absence of toxicity and abundance in nature [1-2 ]. Therefore,
it can be stated that versatility of ZnO ranges from optical, electrical, piezoelectricity,
ferromagnetic to gas sensing properties [ 3-5 ]. Further, large binding energy of 60 meV as
compared to 25 meV of GaN makes ZnO technically efficient approving it for the field of
optoelectronic applications. Thin films of ZnO can be used as a window layer and also as one of
the electrodes in optoelectronic devices such as solar cells [6 ]. Along with this application, ZnO
thin films have been used in varistors, gas sensors, solar cell transparent contact fabrication, etc
[7-9 ]. It is worth mention here that requirement of an optoelectronic device is good quality p-
doped ZnO, and p-n junction, but developing a good quality p-doped ZnO is quite challenging
because of its instability at room temperature [ 10-12 ]. Growth of p-type ZnO has been thought
of in various ways including substitution of elements from Group IA or II B of periodic table on a
Zn site, substitution of elements from Group VA on the O site, and codoping with donors and
acceptors [13-15]. Bi is one of the important dopant to make ZnO p-type and is post-transition
element that lies to the right of transition metals and to the left of the metalloids [16-17]. Bi
doped ZnO leads to faster carrier migration. In this connection, using to the several attractive
properties of Bi doped ZnO we have previously analyzed influence of Bi concentration in ZnO in
terms of nature, structural and optical properties [18]. Further, using as the as obtained p-type Bi
doped ZnO thin film we have reported the fabrication of Au based schottky diode [16]. Now, in
the present paper p-type Bi doped ZnO/p-Si and p-type Bi doped ZnO/n-Si heterojunctions have
been fabricated and work function of the ZnO film was estimated using the calculated electrical
parameters of I-V characteristics.
2. Advanced Nanoscience and Technology: An International Journal (ANTJ), Vol. 2, No.2/3, September 2016
2
2. EXPERIMENTAL DETAIL
2.1. Cleaning of Silicon Wafer
The p-type and n-type Si <100> substrates have been cleaned using RCA-1 and RCA-2 method to
eliminate organic and ionic impurities from the surface before the films deposition. The RCA-1
solution is the combination of DI water, NH4OH and H2O2 in the proportion of 5:1:1, and the
RCA-2 solution is combination of DI water, HCL and H2O2 in the proportion of 6:1:1. To clean
the samples they were dipped into RCA-1 and RCA-2 solutions separately for 10 minutes at 800
C
then cleaned with DI water. Further, to remove the residual oxide from the surface of the
substrate sample, the samples were cleaned with buffered HF solution.
2.2. Deposition of Bismuth Doped ZnO Thin Film
The Bismuth doped ZnO sol of concentration 0.7 M have been prepared using precursor zinc
acetate dehydrate (Zn(CH3COO)2.2H2O), isopropanol (solvent) and stabilizing agent
diethanolamine (DEA). The molar proportion of zinc acetate dehydrates and stabilizer DEA was
kept at 1:1. For Bismuth doping we add 10 molar percentage of Bismuth nitrate pentahydrate
(Bi(N03).5H2O to the starting solution. The prepared solution was stirred at 60°C for 1 hour and
then the prepared sol was reserved for at least 24 hours at room temperature for ageing. Further,
Bi doped ZnO thin films have been deposited over n-type and p-type Si substrate by spin coating
method. The films have been prepared at spinning speed of 2000 rpm for 20 seconds, and
prebaked at 100°C for 10 minutes in oven to evaporate the solvent and organic residuals. The
deposition process has been repeated many times to obtain the required film thickness and finally
the deposited films are placed in a furnace at 5000
C for 1 hrs with air ambient to improve the
crystallization. A 250 nm thick aluminum circular dots have been deposited on the top of ZnO
thin films and bottom of Si substrates using thermal evaporation method as shown in Fig.1. For
the electrical characterization, I-V plot has been plotted using a semiconductor device parameter
analyzer under dark condition.
Figure 1. Schematic view of the Bi doped ZnO on p-Si and n-Si heterojunction.
3. Advanced Nanoscience and Technology: An International Journal (ANTJ), Vol. 2, No.2/3, September 2016
3
3. RESULT AND DISCUSSION
To determine the nature of majority carriers in the deposited Bi doped zinc oxide thin films a very
simple and efficient hot point probe method based on seebeck effect has been performed. From
the results, it can be clearly seen that ZnO films doped with Bi shows p- type nature. To confirm
the consistency of p-type nature of Bi doped ZnO thin films, the experiment was repeated several
time under same experimental condition and subsequently it have been found that outcome
remains the same. The typical resistivity of the doped film as observed from hall measurement
has been found to be nearly equal to 4.1Ω-cm.
Figure 2. Current (I)-Voltage (V) characteristic Bi doped ZnO/p-Si and Bi doped ZnO/n-Si heterojunction
The I-V characteristic of the deposited heterojunctions have been analyzed using microprobe
station and semiconductor device parameter analyzer. The semi-logarithmic I- V characteristics
of p-type Bi doped ZnO/p-Si and p-type Bi doped ZnO/n-Si heterojunctions at room temperature
for the voltage range between -5V to 5V, have been shown in Fig. 2. From the fig.2 it is clearly
observed that the fabricated heterojunctions shows good rectifying characteristics. In the p-ZnO/
n-si heterojunction, Si substrate is connected to the negative terminal of the bias source for
forward biasing, while in p-ZnO/ p-Si heterojunction, Si substrate is connected to the positive
terminal of the bias source for forward biasing because carrier concentration of silicon is higher
than Bi doped ZnO. The fabricated heterojunction shows forward biasing condition which is
similar to Schottky junction. We have calculated the reverse saturation current (Io) by the
intercept of straight line portion of ln(I) versus V plot extrapolated for voltages larger than a few
KT/q with the zero voltage axis which is then used to estimate the value of barrier height ϕB.
Further, the result shows very good conductivity of the films therefore it has been implicit that the
Fermi level might be very closed to the valence band of doped ZnO. The relation between current
and voltage for the fabricated heterojunctions can be given as: [19]
(1)
Voltage (V)
Current(A)
4. Advanced Nanoscience and Technology: An International Journal (ANTJ), Vol. 2, No.2/3, September 2016
4
where q is charge on electron, η is the ideality factor, T is the temperature in Kelvin, K is
Boltzmann constant, V is voltage across the junction and IO is reverse saturation current.The
reverse saturation current can be expressed as follow:
(2)
where A is junction area (A=0.515x10-2
cm2
), A*
is the effective Richardson constant (A*
=32×104
Am−2
K−2
) for ZnO [20] .The effective barrier height ϕB in Eq. (2) can be calculated by
using the following equation:
(3)
From fig.2 the calculated value of reverse saturation currents (Io) is 1.5x10-7
Amp for p-ZnO/n-Si
heterojunction and 3.3x10-8
Amp for p-ZnO/p-Si heterojunction. Further, using calculated values
of reverse saturation current and equation (3) the effective barrier height has been obtained as Φbn
= 0.71 eV for p-ZnO/n-Si and Φbp = 0.75 eV for p-ZnO/p-Si heterojunction. The work function of
ZnO has been calculated based on the Schottky Mott model using following relations for
heterojunctions with n-Si and p- Si substrate respectively.
(4)
And
(5)
where Eg and Xsi are the bandgap energy and electron affinity of silicon having values 1.12 eV
and 4.06 eV [21 ]. The calculated value of the work functions for p-ZnO/p-Si and p-ZnO/n-Si
heterojunctions are 4.43 and 4.77 eV respectively, which closely matched with work function of
defect free ZnO single crystal [21 ] . Since during the cleaning process of silicon wafer a very
thin (~2nm) nonflexible insulating silicon oxide layer has been formed on the surface of silicon
which tailored the barrier height. So, the barrier height with insulating SiO2 layer can be
evaluated using Bardeen model which is given by [21].
for n-Si wafer (6)
for p-Si wafer (7)
Where,
and δ is the thickness of SiO2 layer , Ds is density of states and εi is total permittivity, ϕo is the
neutral Fermi level. For a given interfacial layer thickness, (ϕbP + ϕbn ) =Eg, due to the similarity
of the surface state in p and n type Si. Using the values of q =2 x 1012
/cm3
for n-si wafer,
δ=1.5nm and εi =3.9, ϕo =0.27 eV from the work reported by Turner et al. [22] for metal/n-Si
Schottky barrier and the work function of ZnO as calculated in this experiment by equation (3)
the value of ϕbn has been evaluated using equation (6) and has been obtained as 0.76eV.
Similarly, using the values of qDs= 3 x 1012
/cm3
for p-Si wafer, and ϕo = 0.33 eV from the work
5. Advanced Nanoscience and Technology: An International Journal (ANTJ), Vol. 2, No.2/3, September 2016
5
reported by Smith et al. [23], ϕbp has been calculated using equation (7) obtained as 0.72 eV.
Further, due to the presence of thin SiO2 layer between silicon wafer and ZnO film it is observed
that ϕbP decreases and ϕbn increases as compared to the Schottky Mott model approach. The high
temperature deposition of film increases the rate of oxide formation on the surface of silicon
hence reducing the density of state which decreases the value of ϕbP for p-Si device and increases
the value of ϕbn for n-Si devices. The variation in barrier height with temperature may be due to
the fact that at high temperature more oxygen diffuses toward Si interface which makes ZnO less
stoichiometric by which oxygen induced defects in ZnO decreases the work function of ZnO
which in due course decreases the barrier height.
4. CONCLUSIONS
In this paper, Bi doped p-ZnO thin films have been deposited on pSi and nSi substrate using sol-
gel spin coating technique. The work function of bismuth doped ZnO thin film have been
obtained from the electrical properties of p-ZnO/ p-Si and p-ZnO/ n-Si heterojunctions. The
calculated value of the work function based on the Schottky barrier model exhibits value between
4.5 and 4.78 eV for the films. The effect of very thin layer of SiO2 at the interface of ZnO and Si
wafer on the variation of barrier height, have also been analyzed.
ACKNOWLEDGEMENTS
Authors are grateful to the Centre for Interdisciplinary Research (CIR), MNNIT Allahabad for
providing characterization facilities.
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Authors
Brijesh Kr. Singh received the B.Tech degree in Electronics and Instrumentation
engineering from the Institute of Engineering and Technology, Lucknow (IET,
Lucknow), UP, India in 2002 and the M.Tech (Hons.) degree in Control and
Instrumentation from National Institutes of Technical Teachers’ Training and Research
(NITTTRs), Chandigarh, India in 2012. Since 2013, he is working toward the Ph.D.
degree in electronics and communication engineering from Motilal Nehru National
Institute of Technology Allahabad, (U.P.) India. His research interests include Fabrication
of doped and undoped ZnO thin films for Electronics and optoelectronics applications.
Lucky Agarwal received the B.Tech. degree in Electronics and Communication
Engineering from Gautam Buddh Technical University, Lucknow, India, in 2010 and the
M.Tech degree in Microelectronics and VLSI Design from Motilal Nehru National
Institute Of Technology, Allahabad, India in 2014. He has awarded gold medal for getting
1st rank in Microelectronics and VLSI Design. He is currently pursuing PhD from Motilal
Nehru National Institute of Technology, Allahabad, India. His research interests include
Fabrication and simulation of optical semiconductors devices.
7. Advanced Nanoscience and Technology: An International Journal (ANTJ), Vol. 2, No.2/3, September 2016
7
Shweta Tripathi earned her Ph.D. degreefrom the Department of Electronics Engineering,
Indian Institute of Technology (IIT), Banaras Hindu University (BHU), Varanasi, India in
2011. Dr. Tripathi has joined the Department of Electronics & Communication
Engineering, Motilal Nehru National Institute of Technology (MNNIT) Allahabad, as
Assistant Professor in 2012.Dr. Tripathi has published more than 30 papers in various peer
reviewed international journals and conference proceedings. Her present research interests
include modeling and simulation of optically controlled microwave devices and circuits,
short-channel MOSFETs, multiple-gate MOSFETs, Fabrication of electronic and photonic
devices etc. Dr. Tripathi is the life time member of Indian Society for Technical Education (M. No. :
LM90626), India.