In this paper we introduce an approach to increase density of field-effect hetero transistors framework a three-stage
amplifier circuit. At the same time one can obtain decreasing of dimensions of the above transistors. Dimensions of the elements will be decreased due to manufacture heterostructure with specific structure, doping of required areas of the hetero structure by diffusion or ion implantation and optimization of annealing of dopant and/or radiation defects.
ON OPTIMIZATION OF MANUFACTURING PLANAR DOUBLE-BASE HETEROTRANSISTORS TO DECR...ijaceeejournal
In this paper we consider an approach of manufacturing of double-base hetero transistors to decrease their
dimensions. Framework the approach it should be manufactured a heterostructure with specific configuration.
Farther it is necessary to dope certain areas of the hetero structure by diffusion or by ion implantation.
After finishing of the doping process the dopant and/or radiation defects should be annealed. We consider
an approach of optimization of dopant and/or radiation defects for manufacturing more compact double base
heterotransistors.
ON INCREASING OF DENSITY OF ELEMENTS IN A MULTIVIBRATOR ON BIPOLAR TRANSISTORSijcsitcejournal
In this paper we consider an approach to increase density of elements of a multivibrator on bipolar transistors.
The considered approach based on manufacturing a heterostructure with necessity configuration,
doping by diffusion or ion implantation of required areas to manufacture the required type of conductivity
(p or n) in the areas and optimization of annealing of dopant and/or radiation defects to manufacture more
compact distributions of concentrations of dopants. We also introduce an analytical approach to prognosis
technological process.
ON APPROACH TO DECREASE DIMENSIONS OF FIELD-EFFECT TRANSISTORS FRAMEWORK ELEM...ijfcstjournal
In this paper we consider manufacturing of elements SRAM with increased density of field-effect transistors
consisting these elements. The approach based on manufacturing of the elements in heterostructure with
specific configuration. We consider doping of several required areas of the heterostructure by diffusion or
by ion implantation. After that dopant and radiation defects have been annealed framework optimized
scheme.
OPTIMIZATION OF MANUFACTURING OF LOGICAL ELEMENTS "AND" MANUFACTURED BY USING...ijcsitcejournal
In this paper we introduce an approach to decrease dimensions of logical elements "AND" based on fieldeffect
heterotransistors. Framework the approach one shall consider a heterostructure with specific structure.
Several specific areas of the het
ANALYSIS OF MANUFACTURING OF VOLTAGE RESTORE TO INCREASE DENSITY OF ELEMENTS ...ijoejournal
We introduce an approach for increasing density of voltage restore elements. The approach based on
manufacturing of a heterostructure, which consist of a substrate and an epitaxial layer with special configuration.
Several required sections of the layer should be doped by diffusion or ion implantation. After
that dopants and/or radiation defects should be annealed.
ON OPTIMIZATION OF MANUFACTURING OF FIELD-EFFECT HETEROTRANSISTORS FRAMEWORK ...ijoejournal
In this paper we introduce an approach to increase density of field-effect transistors framework a voltage reference. Framework the approach we consider manufacturing the inverter in heterostructure with specific configuration. Several required areas of the heterostructure should be doped by diffusion or ion implantation. After that dopant and radiation defects should by annealed framework optimized scheme. We also consider an approach to decrease value of mismatch-induced stress in the considered heterostructure. We introduce an analytical approach to analyze mass and heat transport in heterostructures during manufacturing of integrated circuits with account mismatch-induced stress.
ON OPTIMIZATION OF MANUFACTURING OF ELEMENTS OF AN BINARY-ROM CIRCUIT TO INCR...JaresJournal
In this paper we introduce an approach to increase integration rate of elements of an binary-ROM circuit. Framework the approach we consider a heterostructure with special configuration. Several specific areas of the heterostructure should be doped by diffusion or ion implantation. Annealing of dopant and/or radiation defects should be optimized.
ON OPTIMIZATION OF MANUFACTURING OF MULTICHANNEL HETEROTRANSISTORS TO INCREAS...ijrap
In this paper we consider an approach to increase integration rate of field-effect heterotransistors. Framework
the approach we consider a heterostructure with specific configuration. After manufacturing the
heterostructure we consider doping of required areas of the heterostructure by diffusion or ion implantation.
The doping finished by optimized annealing of dopant and/or radiation defects. Framework this paper
we consider a possibility to manufacture with several channels. Manufacturing multi-channel transistors
gives us a possibility the to increase integration rate of transistors and to increase electrical current
through the transistor.
ON OPTIMIZATION OF MANUFACTURING PLANAR DOUBLE-BASE HETEROTRANSISTORS TO DECR...ijaceeejournal
In this paper we consider an approach of manufacturing of double-base hetero transistors to decrease their
dimensions. Framework the approach it should be manufactured a heterostructure with specific configuration.
Farther it is necessary to dope certain areas of the hetero structure by diffusion or by ion implantation.
After finishing of the doping process the dopant and/or radiation defects should be annealed. We consider
an approach of optimization of dopant and/or radiation defects for manufacturing more compact double base
heterotransistors.
ON INCREASING OF DENSITY OF ELEMENTS IN A MULTIVIBRATOR ON BIPOLAR TRANSISTORSijcsitcejournal
In this paper we consider an approach to increase density of elements of a multivibrator on bipolar transistors.
The considered approach based on manufacturing a heterostructure with necessity configuration,
doping by diffusion or ion implantation of required areas to manufacture the required type of conductivity
(p or n) in the areas and optimization of annealing of dopant and/or radiation defects to manufacture more
compact distributions of concentrations of dopants. We also introduce an analytical approach to prognosis
technological process.
ON APPROACH TO DECREASE DIMENSIONS OF FIELD-EFFECT TRANSISTORS FRAMEWORK ELEM...ijfcstjournal
In this paper we consider manufacturing of elements SRAM with increased density of field-effect transistors
consisting these elements. The approach based on manufacturing of the elements in heterostructure with
specific configuration. We consider doping of several required areas of the heterostructure by diffusion or
by ion implantation. After that dopant and radiation defects have been annealed framework optimized
scheme.
OPTIMIZATION OF MANUFACTURING OF LOGICAL ELEMENTS "AND" MANUFACTURED BY USING...ijcsitcejournal
In this paper we introduce an approach to decrease dimensions of logical elements "AND" based on fieldeffect
heterotransistors. Framework the approach one shall consider a heterostructure with specific structure.
Several specific areas of the het
ANALYSIS OF MANUFACTURING OF VOLTAGE RESTORE TO INCREASE DENSITY OF ELEMENTS ...ijoejournal
We introduce an approach for increasing density of voltage restore elements. The approach based on
manufacturing of a heterostructure, which consist of a substrate and an epitaxial layer with special configuration.
Several required sections of the layer should be doped by diffusion or ion implantation. After
that dopants and/or radiation defects should be annealed.
ON OPTIMIZATION OF MANUFACTURING OF FIELD-EFFECT HETEROTRANSISTORS FRAMEWORK ...ijoejournal
In this paper we introduce an approach to increase density of field-effect transistors framework a voltage reference. Framework the approach we consider manufacturing the inverter in heterostructure with specific configuration. Several required areas of the heterostructure should be doped by diffusion or ion implantation. After that dopant and radiation defects should by annealed framework optimized scheme. We also consider an approach to decrease value of mismatch-induced stress in the considered heterostructure. We introduce an analytical approach to analyze mass and heat transport in heterostructures during manufacturing of integrated circuits with account mismatch-induced stress.
ON OPTIMIZATION OF MANUFACTURING OF ELEMENTS OF AN BINARY-ROM CIRCUIT TO INCR...JaresJournal
In this paper we introduce an approach to increase integration rate of elements of an binary-ROM circuit. Framework the approach we consider a heterostructure with special configuration. Several specific areas of the heterostructure should be doped by diffusion or ion implantation. Annealing of dopant and/or radiation defects should be optimized.
ON OPTIMIZATION OF MANUFACTURING OF MULTICHANNEL HETEROTRANSISTORS TO INCREAS...ijrap
In this paper we consider an approach to increase integration rate of field-effect heterotransistors. Framework
the approach we consider a heterostructure with specific configuration. After manufacturing the
heterostructure we consider doping of required areas of the heterostructure by diffusion or ion implantation.
The doping finished by optimized annealing of dopant and/or radiation defects. Framework this paper
we consider a possibility to manufacture with several channels. Manufacturing multi-channel transistors
gives us a possibility the to increase integration rate of transistors and to increase electrical current
through the transistor.
AN APPROACH TO OPTIMIZE OF MANUFACTURING OF A VOLTAGE REFERENCE BASED ON HETE...JaresJournal
In this paper we introduce an approach to increase density of field-effect transistors framework a voltage
reference. Framework the approach we consider manufacturing the inverter in heterostructure with specific configuration. Several required areas of the heterostructure should be doped by diffusion or ion implantation. After that dopant and radiation defects should by annealed framework optimized scheme. We also
consider an approach to decrease value of mismatch-induced stress in the considered heterostructure. We
introduce an analytical approach to analyze mass and heat transport in heterostructures during manufacturing of integrated circuits with account mismatch-induced stress.
ON OPTIMIZATION OF MANUFACTURING OF AN AMPLIFIER TO INCREASE DENSITY OF BIPOL...ijoejournal
In this paper we consider a possibility to increase density of bipolar heterotransistor framework an amplifier
due to decreasing of their dimensions. The considered approach based on doping of required areas of
heterostructure with specific configuration by diffusion or ion implantation. The doping finished by optimized
annealing of dopant and/or radiation defects. Analysis of redistribution of dopant with account redistribution
of radiation defects (after implantation of ions of dopant) for optimization of the above annealing
have been done by using recently introduced analytical approach. The approach gives a possibility
to analyze mass and heat transports in a heterostructure without crosslinking of solutions on interfaces
between layers of the heterostructure with account nonlinearity of these transports and variation in time of
their parameters.
In this paper we introduce an approach to increase vertical integration of elements of transistor-transistor logic with function AND-NOT. Framework the approach we consider a heterostructure with special configuration. Several specific areas of the heterostructure should be doped by diffusion or ion implantation. Annealing of dopant and/or radiation defects should be optimized.
On optimization ofON OPTIMIZATION OF DOPING OF A HETEROSTRUCTURE DURING MANUF...ijcsitcejournal
We introduce an approach of manufacturing of a p-i-n-heterodiodes. The approach based on using a δ-
doped heterostructure, doping by diffusion or ion implantation of several areas of the heterostructure. After
the doping the dopant and/or radiation defects have been annealed. We introduce an approach to optimize
annealing of the dopant and/or radiation defects. We determine several conditions to manufacture more
compact p-i-n-heterodiodes
An Approach to Optimize Regimes of Manufacturing of Complementary Horizontal ...ijrap
In this paper we consider nonlinear model to describe manufacturing complementary horizontal field-effect heterotransistor. Based on analytical solution of the considered boundary problems some recommendations have been formulated to optimize technological processes.
Decreasing of quantity of radiation de fects inijcsa
Recently we introduced an approach to increase sharpness of diffusion-junction and implanted-junction
heterorectifiers. The heterorectifiers could by single and as a part of heterobipolar transistors. However
manufacturing p-n-junctions by ion implantation leads to generation of radiation defects in materials of
heterostructure. In this paper we introduce an approach to use an overlayer and optimization of annealing
of radiation defects to decrease quantity of radiation defects.
Optimization of technological process to decrease dimensions of circuits xor ...ijfcstjournal
The paper describes an approach of increasing of integration rate of elements of integrated circuits. The
approach has been illustrated by example of manufacturing of a circuit XOR. Framework the approach one
should manufacture a heterostructure with specific configuration. After that several special areas of the
heterostructure should be doped by diffusion and/or ion implantation and optimization of annealing of dopant
and/or radiation defects. We analyzed redistribution of dopant with account redistribution of radiation
defects to formulate recommendations to decrease dimensions of integrated circuits by using analytical
approaches of modeling of technological process.
ON DECREASING OF DIMENSIONS OF FIELDEFFECT TRANSISTORS WITH SEVERAL SOURCESmsejjournal
We analyzed mass and heat transport during manufacturing field-effect heterotransistors with several sources to decrease their dimensions. Framework the result of manufacturing it is necessary to manufacture heterostructure with specific configuration. After that it is necessary to dope required areas of the heterostructure by diffusion or ion implantation to manufacture the required type of conductivity (p or n). After
the doping it is necessary to do optimize annealing. We introduce an analytical approach to prognosis mass
and heat transport during technological processes. Using the approach leads to take into account nonlinearity of mass and heat transport and variation in space and time (at one time) physical parameters of these processes
ON APPROACH TO INCREASE DENSITY OF FIELD- EFFECT TRANSISTORS IN AN INVERTER C...antjjournal
In this paper we consider an approach to decrease dimensions of field-effect transistors framework invertors with increasing of their density. Framework the approach it is necessary to manufacture a
heterostructure, which consist of two layers. One of them includes into itself several sections. After manufacturing of the heterostructure these sections should be doped by diffusion or by ion implantation with future optimized annealing of dopant and/or radiation defects. To prognosis the technological process we consider an analytical approach, which gives a possibility to take into account variation of physical parameters in space and time. At the same time the approach gives a possibility to take into
account nonlinearity of mass and heat transport and to analyze the above transport without crosslinking solutions on interfaces between materials of heterostructure.
OPTIMIZATION OF MANUFACTURE OF FIELDEFFECT HETEROTRANSISTORS WITHOUT P-NJUNCT...ijrap
It has been recently shown, that manufacturing p-n-junctions, field-effect and bipolar transistors, thyristors
in a multilayer structure by diffusion or ion implantation under condition of optimization of dopant and/or
radiation defects leads to increasing of sharpness of p-n-junctions (both single p-n-junctions and p-njunctions,
which include into their system). In this situation one can also obtain increasing of homogeneity
of dopant in doped area. In this paper we consider manufacturing a field-effect heterotransistor without pn-
junction. Optimization of technological process with using inhomogeneity of heterostructure give us
possibility to manufacture the transistors as more compact.
ON OPTIMIZATION OF MANUFACTURING OF FIELD EFFECT HETEROTRANSISTORS FRAMEWORK ...antjjournal
We consider an approach for increasing density of field-effect heterotransistors in a single-stage multi-path
operational amplifier. At the same time one can obtain decreasing of dimensions of the above transistors.
Dimensions of the elements could be decreased by manufacturing of these elements in a heterostructure
with specific structure. The manufacturing is doing by doping of required areas of the heterostructure by
diffusion or ion implantation with future optimization of annealing of dopant and/or radiation defects.
On Approach to Increase Integration rate of Elements of a Circuit Driver with...BRNSS Publication Hub
In this paper, we introduce an approach to increase the integration rate of elements of a driver with 2-tap de-emphasis and impendence matching. Framework the approach, we consider a heterostructure with special configuration. Several specific areas of the heterostructure should be doped by diffusion or ion implantation. Annealing of dopant and/or radiation defects should be optimized.
ON VERTICAL INTEGRATION FRAMEWORK ELEMENT OF TRANSISTOR-TRANSISTOR LOGICijaceeejournal
In this paper we introduce an approach to increase vertical integration of elements of transistor-transistor
logic with function AND-NOT. Framework the approach we consider a heterostructure with special configuration.
Several specific areas of the heterostructure should be doped by diffusion or ion implantation.
Annealing of dopant and/or radiation defects should be optimized.
Influence of Overlayers on Depth of Implanted-Heterojunction RectifiersZac Darcy
In this paper we compare distributions of concentrations of dopants in an implanted-junction rectifiers in a
heterostructures with an overlayer and without the overlayer. Conditions for decreasing of depth of the
considered p-n-junction have been formulated.
INFLUENCE OF OVERLAYERS ON DEPTH OF IMPLANTED-HETEROJUNCTION RECTIFIERSZac Darcy
In this paper we compare distributions of concentrations of dopants in an implanted-junction rectifiers in a
heterostructures with an overlayer and without the overlayer. Conditions for decreasing of depth of the
considered p-n-junction have been formulated.
On Optimization of Manufacturing of Field-Effect Heterotransistors Frame-work...antjjournal
We consider an approach for increasing density of field-effect heterotransistors in a single-stage multi-path
operational amplifier. At the same time one can obtain decreasing of dimensions of the above transistors.
Dimensions of the elements could be decreased by manufacturing of these elements in a heterostructure
with specific structure. The manufacturing is doing by doping of required areas of the heterostructure by
diffusion or ion implantation with future optimization of annealing of dopant and/or radiation defects.
On Optimization of Manufacturing of Field-Effect Heterotransistors Frame-work...antjjournal
We consider an approach for increasing density of field-effect heterotransistors in a single-stage multi-path operational amplifier. At the same time one can obtain decreasing of dimensions of the above transistors.
Dimensions of the elements could be decreased by manufacturing of these elements in a heterostructure with specific structure. The manufacturing is doing by doping of required areas of the heterostructure by
diffusion or ion implantation with future optimization of annealing of dopant and/or radiation defects.
An Approach to Optimize Regimes of Manufacturing of Complementary Horizontal ...ijrap
In this paper we consider nonlinear model to describe manufacturing complementary horizontal field-effect
heterotransistor. Based on analytical solution of the considered boundary problems some recommendations
have been formulated to optimize technological processes.
ON APPROACH OF OPTIMIZATION OF FORMATION OF INHOMOGENOUS DISTRIBUTIONS OF DOP...ijcsa
We introduce an approach of manufacturing of a field-effect heterotransistor with inhomogenous doping of channel. The inhomogenous distribution of concentration of dopant gives a possibility to change speed of transport of charge carriers and to decrease length of channel.
INFLUENCE OF OVERLAYERS ON DEPTH OF IMPLANTED-HETEROJUNCTION RECTIFIERSZac Darcy
In this paper we compare distributions of concentrations of dopants in an implanted-junction rectifiers in a
heterostructures with an overlayer and without the overlayer. Conditions for decreasing of depth of the
considered p-n-junction have been formulated.
ON APPROACH TO INCREASE INTEGRATION RATE OF ELEMENTS OF AN COMPARATOR CIRCUITjedt_journal
In this paper we introduce an approach to increase integration rate of elements of an comparator circuit. Framework the approach we consider a heterostructure with special configuration. Several specific areas of the heterostructure should be doped by diffusion or ion implantation. Annealing of dopant and/or radiation defects should be optimized.
AN APPROACH TO OPTIMIZE OF MANUFACTURING OF A VOLTAGE REFERENCE BASED ON HETE...JaresJournal
In this paper we introduce an approach to increase density of field-effect transistors framework a voltage
reference. Framework the approach we consider manufacturing the inverter in heterostructure with specific configuration. Several required areas of the heterostructure should be doped by diffusion or ion implantation. After that dopant and radiation defects should by annealed framework optimized scheme. We also
consider an approach to decrease value of mismatch-induced stress in the considered heterostructure. We
introduce an analytical approach to analyze mass and heat transport in heterostructures during manufacturing of integrated circuits with account mismatch-induced stress.
ON OPTIMIZATION OF MANUFACTURING OF AN AMPLIFIER TO INCREASE DENSITY OF BIPOL...ijoejournal
In this paper we consider a possibility to increase density of bipolar heterotransistor framework an amplifier
due to decreasing of their dimensions. The considered approach based on doping of required areas of
heterostructure with specific configuration by diffusion or ion implantation. The doping finished by optimized
annealing of dopant and/or radiation defects. Analysis of redistribution of dopant with account redistribution
of radiation defects (after implantation of ions of dopant) for optimization of the above annealing
have been done by using recently introduced analytical approach. The approach gives a possibility
to analyze mass and heat transports in a heterostructure without crosslinking of solutions on interfaces
between layers of the heterostructure with account nonlinearity of these transports and variation in time of
their parameters.
In this paper we introduce an approach to increase vertical integration of elements of transistor-transistor logic with function AND-NOT. Framework the approach we consider a heterostructure with special configuration. Several specific areas of the heterostructure should be doped by diffusion or ion implantation. Annealing of dopant and/or radiation defects should be optimized.
On optimization ofON OPTIMIZATION OF DOPING OF A HETEROSTRUCTURE DURING MANUF...ijcsitcejournal
We introduce an approach of manufacturing of a p-i-n-heterodiodes. The approach based on using a δ-
doped heterostructure, doping by diffusion or ion implantation of several areas of the heterostructure. After
the doping the dopant and/or radiation defects have been annealed. We introduce an approach to optimize
annealing of the dopant and/or radiation defects. We determine several conditions to manufacture more
compact p-i-n-heterodiodes
An Approach to Optimize Regimes of Manufacturing of Complementary Horizontal ...ijrap
In this paper we consider nonlinear model to describe manufacturing complementary horizontal field-effect heterotransistor. Based on analytical solution of the considered boundary problems some recommendations have been formulated to optimize technological processes.
Decreasing of quantity of radiation de fects inijcsa
Recently we introduced an approach to increase sharpness of diffusion-junction and implanted-junction
heterorectifiers. The heterorectifiers could by single and as a part of heterobipolar transistors. However
manufacturing p-n-junctions by ion implantation leads to generation of radiation defects in materials of
heterostructure. In this paper we introduce an approach to use an overlayer and optimization of annealing
of radiation defects to decrease quantity of radiation defects.
Optimization of technological process to decrease dimensions of circuits xor ...ijfcstjournal
The paper describes an approach of increasing of integration rate of elements of integrated circuits. The
approach has been illustrated by example of manufacturing of a circuit XOR. Framework the approach one
should manufacture a heterostructure with specific configuration. After that several special areas of the
heterostructure should be doped by diffusion and/or ion implantation and optimization of annealing of dopant
and/or radiation defects. We analyzed redistribution of dopant with account redistribution of radiation
defects to formulate recommendations to decrease dimensions of integrated circuits by using analytical
approaches of modeling of technological process.
ON DECREASING OF DIMENSIONS OF FIELDEFFECT TRANSISTORS WITH SEVERAL SOURCESmsejjournal
We analyzed mass and heat transport during manufacturing field-effect heterotransistors with several sources to decrease their dimensions. Framework the result of manufacturing it is necessary to manufacture heterostructure with specific configuration. After that it is necessary to dope required areas of the heterostructure by diffusion or ion implantation to manufacture the required type of conductivity (p or n). After
the doping it is necessary to do optimize annealing. We introduce an analytical approach to prognosis mass
and heat transport during technological processes. Using the approach leads to take into account nonlinearity of mass and heat transport and variation in space and time (at one time) physical parameters of these processes
ON APPROACH TO INCREASE DENSITY OF FIELD- EFFECT TRANSISTORS IN AN INVERTER C...antjjournal
In this paper we consider an approach to decrease dimensions of field-effect transistors framework invertors with increasing of their density. Framework the approach it is necessary to manufacture a
heterostructure, which consist of two layers. One of them includes into itself several sections. After manufacturing of the heterostructure these sections should be doped by diffusion or by ion implantation with future optimized annealing of dopant and/or radiation defects. To prognosis the technological process we consider an analytical approach, which gives a possibility to take into account variation of physical parameters in space and time. At the same time the approach gives a possibility to take into
account nonlinearity of mass and heat transport and to analyze the above transport without crosslinking solutions on interfaces between materials of heterostructure.
OPTIMIZATION OF MANUFACTURE OF FIELDEFFECT HETEROTRANSISTORS WITHOUT P-NJUNCT...ijrap
It has been recently shown, that manufacturing p-n-junctions, field-effect and bipolar transistors, thyristors
in a multilayer structure by diffusion or ion implantation under condition of optimization of dopant and/or
radiation defects leads to increasing of sharpness of p-n-junctions (both single p-n-junctions and p-njunctions,
which include into their system). In this situation one can also obtain increasing of homogeneity
of dopant in doped area. In this paper we consider manufacturing a field-effect heterotransistor without pn-
junction. Optimization of technological process with using inhomogeneity of heterostructure give us
possibility to manufacture the transistors as more compact.
ON OPTIMIZATION OF MANUFACTURING OF FIELD EFFECT HETEROTRANSISTORS FRAMEWORK ...antjjournal
We consider an approach for increasing density of field-effect heterotransistors in a single-stage multi-path
operational amplifier. At the same time one can obtain decreasing of dimensions of the above transistors.
Dimensions of the elements could be decreased by manufacturing of these elements in a heterostructure
with specific structure. The manufacturing is doing by doping of required areas of the heterostructure by
diffusion or ion implantation with future optimization of annealing of dopant and/or radiation defects.
On Approach to Increase Integration rate of Elements of a Circuit Driver with...BRNSS Publication Hub
In this paper, we introduce an approach to increase the integration rate of elements of a driver with 2-tap de-emphasis and impendence matching. Framework the approach, we consider a heterostructure with special configuration. Several specific areas of the heterostructure should be doped by diffusion or ion implantation. Annealing of dopant and/or radiation defects should be optimized.
ON VERTICAL INTEGRATION FRAMEWORK ELEMENT OF TRANSISTOR-TRANSISTOR LOGICijaceeejournal
In this paper we introduce an approach to increase vertical integration of elements of transistor-transistor
logic with function AND-NOT. Framework the approach we consider a heterostructure with special configuration.
Several specific areas of the heterostructure should be doped by diffusion or ion implantation.
Annealing of dopant and/or radiation defects should be optimized.
Influence of Overlayers on Depth of Implanted-Heterojunction RectifiersZac Darcy
In this paper we compare distributions of concentrations of dopants in an implanted-junction rectifiers in a
heterostructures with an overlayer and without the overlayer. Conditions for decreasing of depth of the
considered p-n-junction have been formulated.
INFLUENCE OF OVERLAYERS ON DEPTH OF IMPLANTED-HETEROJUNCTION RECTIFIERSZac Darcy
In this paper we compare distributions of concentrations of dopants in an implanted-junction rectifiers in a
heterostructures with an overlayer and without the overlayer. Conditions for decreasing of depth of the
considered p-n-junction have been formulated.
On Optimization of Manufacturing of Field-Effect Heterotransistors Frame-work...antjjournal
We consider an approach for increasing density of field-effect heterotransistors in a single-stage multi-path
operational amplifier. At the same time one can obtain decreasing of dimensions of the above transistors.
Dimensions of the elements could be decreased by manufacturing of these elements in a heterostructure
with specific structure. The manufacturing is doing by doping of required areas of the heterostructure by
diffusion or ion implantation with future optimization of annealing of dopant and/or radiation defects.
On Optimization of Manufacturing of Field-Effect Heterotransistors Frame-work...antjjournal
We consider an approach for increasing density of field-effect heterotransistors in a single-stage multi-path operational amplifier. At the same time one can obtain decreasing of dimensions of the above transistors.
Dimensions of the elements could be decreased by manufacturing of these elements in a heterostructure with specific structure. The manufacturing is doing by doping of required areas of the heterostructure by
diffusion or ion implantation with future optimization of annealing of dopant and/or radiation defects.
An Approach to Optimize Regimes of Manufacturing of Complementary Horizontal ...ijrap
In this paper we consider nonlinear model to describe manufacturing complementary horizontal field-effect
heterotransistor. Based on analytical solution of the considered boundary problems some recommendations
have been formulated to optimize technological processes.
ON APPROACH OF OPTIMIZATION OF FORMATION OF INHOMOGENOUS DISTRIBUTIONS OF DOP...ijcsa
We introduce an approach of manufacturing of a field-effect heterotransistor with inhomogenous doping of channel. The inhomogenous distribution of concentration of dopant gives a possibility to change speed of transport of charge carriers and to decrease length of channel.
INFLUENCE OF OVERLAYERS ON DEPTH OF IMPLANTED-HETEROJUNCTION RECTIFIERSZac Darcy
In this paper we compare distributions of concentrations of dopants in an implanted-junction rectifiers in a
heterostructures with an overlayer and without the overlayer. Conditions for decreasing of depth of the
considered p-n-junction have been formulated.
ON APPROACH TO INCREASE INTEGRATION RATE OF ELEMENTS OF AN COMPARATOR CIRCUITjedt_journal
In this paper we introduce an approach to increase integration rate of elements of an comparator circuit. Framework the approach we consider a heterostructure with special configuration. Several specific areas of the heterostructure should be doped by diffusion or ion implantation. Annealing of dopant and/or radiation defects should be optimized.
ON DECREASING OF DIMENSIONS OF FIELDEFFECT TRANSISTORS WITH SEVERAL SOURCESmsejjournal
We analyzed mass and heat transport during manufacturing field-effect heterotransistors with several
sources to decrease their dimensions. Framework the result of manufacturing it is necessary to manufacture
heterostructure with specific configuration. After that it is necessary to dope required areas of the heterostructure by diffusion or ion implantation to manufacture the required type of conductivity (p or n). After
the doping it is necessary to do optimize annealing. We introduce an analytical approach to prognosis mass
and heat transport during technological processes. Using the approach leads to take into account nonlinearity of mass and heat transport and variation in space and time (at one time) physical parameters of these
processes
On Decreasing of Dimensions of Field-Effect Transistors with Several Sourcesmsejjournal
We analyzed mass and heat transport during manufacturing field-effect heterotransistors with several
sources to decrease their dimensions. Framework the result of manufacturing it is necessary to manufacture
heterostructure with specific configuration. After that it is necessary to dope required areas of the heterostructure by diffusion or ion implantation to manufacture the required type of conductivity (p or n). After
the doping it is necessary to do optimize annealing. We introduce an analytical approach to prognosis mass
and heat transport during technological processes. Using the approach leads to take into account nonlinearity of mass and heat transport and variation in space and time (at one time) physical parameters of these
processes
On prognozisys of manufacturing doublebaseijaceeejournal
In this paper we introduce a modification of recently introduced analytical approach to model mass- and
heat transport. The approach gives us possibility to model the transport in multilayer structures with account
nonlinearity of the process and time-varing coefficients and without matching the solutions at the
interfaces of the multilayer structures. As an example of using of the approach we consider technological
process to manufacture more compact double base heterobipolar transistor. The technological approach
based on manufacturing a heterostructure with required configuration, doping of required areas of this
heterostructure by diffusion or ion implantation and optimal annealing of dopant and/or radiation defects.
The approach gives us possibility to manufacture p-n- junctions with higher sharpness framework the transistor.
In this situation we have a possibility to obtain smaller switching time of p-n- junctions and higher
compactness of the considered bipolar transistor.
Optimization of Manufacture of Field-Effect Heterotransistors without P-N-Jun...ijrap
It has been recently shown, that manufacturing p-n-junctions, field-effect and bipolar transistors, thyristors in a multilayer structure by diffusion or ion implantation under condition of optimization of dopant and/or
radiation defects leads to increasing of sharpness of p-n-junctions (both single p-n-junctions and p-njunctions, which include into their system). In this situation one can also obtain increasing of homogeneity of dopant in doped area. In this paper we consider manufacturing a field-effect heterotransistor without pn-junction. Optimization of technological process with using inhomogeneity of heterostructure give us possibility to manufacture the transistors as more compact.
Optimization of Manufacture of Field-Effect Heterotransistors without P-N-Jun...ijrap
It has been recently shown, that manufacturing p-n-junctions, field-effect and bipolar transistors, thyristors in a multilayer structure by diffusion or ion implantation under condition of optimization of dopant and/or radiation defects leads to increasing of sharpness of p-n-junctions (both single p-n-junctions and p-njunctions, which include into their system). In this situation one can also obtain increasing of homogeneity of dopant in doped area. In this paper we consider manufacturing a field-effect heterotransistor without pn-junction. Optimization of technological process with using inhomogeneity of heterostructure give us possibility to manufacture the transistors as more compact.
Optimization of Technological Process to Decrease Dimensions of Circuits XOR,...ijfcstjournal
The paper describes an approach of increasing of integration rate of elements of integrated circuits. The
approach has been illustrated by example of manufacturing of a circuit XOR. Framework the approach one
should manufacture a heterostructure with specific configuration. After that several special areas of the
heterostructure should be doped by diffusion and/or ion implantation and optimization of annealing of dopant and/or radiation defects. We analyzed redistribution of dopant with account redistribution of radiation
defects to formulate recommendations to decrease dimensions of integrated circuits by using analytical
approaches of modeling of technological process.
MODIFICATION OF DOPANT CONCENTRATION PROFILE IN A FIELD-EFFECT HETEROTRANSIST...msejjournal
In this paper we consider an approach of manufacturing more compact field-effect heterotransistors. The
approach based on manufacturing a heterostructure, which consist of a substrate and an epitaxial layer
with specific configuration. After that several areas of the epitaxial layer have been doped by diffusion or
ion implantation with optimized annealing of dopant and /or radiation defects. At the same time we introduce
an approach of modification of energy band diagram by additional doping of channel of the transistors.
We also consider an analytical approach to model and optimize technological process.
MODIFICATION OF DOPANT CONCENTRATION PROFILE IN A FIELD-EFFECT HETEROTRANSIST...msejjournal
In this paper we consider an approach of manufacturing more compact field-effect heterotransistors. The
approach based on manufacturing a heterostructure, which consist of a substrate and an epitaxial layer
with specific configuration. After that several areas of the epitaxial layer have been doped by diffusion or
ion implantation with optimized annealing of dopant and /or radiation defects. At the same time we introduce an approach of modification of energy band diagram by additional doping of channel of the transistors. We also consider an analytical approach to model and optimize technological process.
Similar to ON OPTIMIZATION OF MANUFACTURING OF FIELD-EFFECT HETERO TRANSISTORS A THREE STAGE AMPLIFIER CIRCUIT, TO INCREASE THEIR DENSITY (20)
A REVIEW OF LOW POWERAND AREA EFFICIENT FSM BASED LFSR FOR LOGIC BISTjedt_journal
Built in Self Test circuits enable an integrated circuit to test itself. Built in Self Test reduces test and maintenance costs for an integrated circuit by eliminating the need for expensive test equipment. Built in Self Test also allows an integrated circuit to test at its normal operating speed which is very important for detecting timing faults. Despite all of these advantages Built in Self Test has seen limited use in industry because of area and performance overhead and increased design time. This paper presents automated techniques for implementing BIST in a way that minimizes area and performance overhead. This approach allows applying at-speed test patterns and eliminates the need for an external tester. Proper design of the test pattern generator contributes to reduction in the power consumption of the CUT and the overall power consumption of the BIST circuitry. We have proposed FSM based LFSR which generate maximum correlation among the patterns and targeted on c432, c1908 and c3540 benchmark circuits to validate test power, achieved significant improved in power up to 15% compared to conventional test generator and also achieved optimal area overhead,designed using Verilog HDL and implemented using Xilinx 14.3 and Cadence tool.
International Journal of Electronic Design and Test (JEDT) is a peer-reviewed, open access journal which invites original works describing the methods used to design and test electronic product hardware and supportive software. Authors from industry and academia are invited to submit their original unpublished research works on the topics listed below:
FREE PUBLICATION CHARGES - International Journal of Electronic Design and Tes...jedt_journal
International Journal of Electronic Design and Test (JEDT) is a peer-reviewed, open access journal which invites original works describing the methods used to design and test electronic product hardware and supportive software. Authors from industry and academia are invited to submit their original unpublished research works on the topics listed below:
FREE PUBLICATION CHARGES - International Journal of Electronic Design and Tes...jedt_journal
International Journal of Electronic Design and Test (JEDT) is a peer-reviewed, open access journal which invites original works describing the methods used to design and test electronic product hardware and supportive software. Authors from industry and academia are invited to submit their original unpublished research works on the topics
NO PUBLICATION CHARGES - International Journal of Electronic Design and Test ...jedt_journal
International Journal of Electronic Design and Test (JEDT) is a peer-reviewed, open access journal which invites original works describing the methods used to design and test electronic product hardware and supportive software. Authors from industry and academia are invited to submit their original unpublished research works on the topics listed below:
Call for Papers - International Journal of Electronic Design and Test (JEDT)jedt_journal
International Journal of Electronic Design and Test(JEDT) is a peer-reviewed, open access journal which invites original works describing the methods used to design and test electronic product hardware and supportive software. Authors from industry and academia are invited to submit their original unpublished research works on the topics listed below:
Call for Papers - International Journal of Electronic Design and Test (JEDT)jedt_journal
International Journal of Electronic Design and Test(JEDT) is a peer-reviewed, open access journal which invites original works describing the methods used to design and test electronic product hardware and supportive software. Authors from industry and academia are invited to submit their original unpublished research works on the topics listed below:
A SINGLE-ENDED AND BIT-INTERLEAVING 7T SRAM CELL IN SUB-THRESHOLD REGION WITH...jedt_journal
In recent years, to reduce power consumption and increase cell resistance against soft error, several subthreshold SRAM cell have been provided. Also, in the memory design, to increase the memory density and reduce the occupied area, sub-100 nm technologies have been used. These technologies also increase the sensitivity of the cell against soft error. Among the proposed methods to confront soft error, bitinterleaving
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COLLEGE BUS MANAGEMENT SYSTEM PROJECT REPORT.pdfKamal Acharya
The College Bus Management system is completely developed by Visual Basic .NET Version. The application is connect with most secured database language MS SQL Server. The application is develop by using best combination of front-end and back-end languages. The application is totally design like flat user interface. This flat user interface is more attractive user interface in 2017. The application is gives more important to the system functionality. The application is to manage the student’s details, driver’s details, bus details, bus route details, bus fees details and more. The application has only one unit for admin. The admin can manage the entire application. The admin can login into the application by using username and password of the admin. The application is develop for big and small colleges. It is more user friendly for non-computer person. Even they can easily learn how to manage the application within hours. The application is more secure by the admin. The system will give an effective output for the VB.Net and SQL Server given as input to the system. The compiled java program given as input to the system, after scanning the program will generate different reports. The application generates the report for users. The admin can view and download the report of the data. The application deliver the excel format reports. Because, excel formatted reports is very easy to understand the income and expense of the college bus. This application is mainly develop for windows operating system users. In 2017, 73% of people enterprises are using windows operating system. So the application will easily install for all the windows operating system users. The application-developed size is very low. The application consumes very low space in disk. Therefore, the user can allocate very minimum local disk space for this application.
Cosmetic shop management system project report.pdfKamal Acharya
Buying new cosmetic products is difficult. It can even be scary for those who have sensitive skin and are prone to skin trouble. The information needed to alleviate this problem is on the back of each product, but it's thought to interpret those ingredient lists unless you have a background in chemistry.
Instead of buying and hoping for the best, we can use data science to help us predict which products may be good fits for us. It includes various function programs to do the above mentioned tasks.
Data file handling has been effectively used in the program.
The automated cosmetic shop management system should deal with the automation of general workflow and administration process of the shop. The main processes of the system focus on customer's request where the system is able to search the most appropriate products and deliver it to the customers. It should help the employees to quickly identify the list of cosmetic product that have reached the minimum quantity and also keep a track of expired date for each cosmetic product. It should help the employees to find the rack number in which the product is placed.It is also Faster and more efficient way.
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Immunizing Image Classifiers Against Localized Adversary Attacksgerogepatton
This paper addresses the vulnerability of deep learning models, particularly convolutional neural networks
(CNN)s, to adversarial attacks and presents a proactive training technique designed to counter them. We
introduce a novel volumization algorithm, which transforms 2D images into 3D volumetric representations.
When combined with 3D convolution and deep curriculum learning optimization (CLO), itsignificantly improves
the immunity of models against localized universal attacks by up to 40%. We evaluate our proposed approach
using contemporary CNN architectures and the modified Canadian Institute for Advanced Research (CIFAR-10
and CIFAR-100) and ImageNet Large Scale Visual Recognition Challenge (ILSVRC12) datasets, showcasing
accuracy improvements over previous techniques. The results indicate that the combination of the volumetric
input and curriculum learning holds significant promise for mitigating adversarial attacks without necessitating
adversary training.
About
Indigenized remote control interface card suitable for MAFI system CCR equipment. Compatible for IDM8000 CCR. Backplane mounted serial and TCP/Ethernet communication module for CCR remote access. IDM 8000 CCR remote control on serial and TCP protocol.
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Indigenized remote control interface card suitable for MAFI system CCR equipment. Compatible for IDM8000 CCR. Backplane mounted serial and TCP/Ethernet communication module for CCR remote access. IDM 8000 CCR remote control on serial and TCP protocol.
Key Features
Indigenized remote control interface card suitable for MAFI system CCR equipment. Compatible for IDM8000 CCR. Backplane mounted serial and TCP/Ethernet communication module for CCR remote access. IDM 8000 CCR remote control on serial and TCP protocol.
• Remote control: Parallel or serial interface
• Compatible with MAFI CCR system
• Copatiable with IDM8000 CCR
• Compatible with Backplane mount serial communication.
• Compatible with commercial and Defence aviation CCR system.
• Remote control system for accessing CCR and allied system over serial or TCP.
• Indigenized local Support/presence in India.
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• Remote control: Parallel or serial interface.
• Compatible with MAFI CCR system.
• Compatible with IDM8000 CCR.
• Compatible with Backplane mount serial communication.
• Compatible with commercial and Defence aviation CCR system.
• Remote control system for accessing CCR and allied system over serial or TCP.
• Indigenized local Support/presence in India.
• Easy in configuration using DIP switches.
Event Management System Vb Net Project Report.pdfKamal Acharya
In present era, the scopes of information technology growing with a very fast .We do not see any are untouched from this industry. The scope of information technology has become wider includes: Business and industry. Household Business, Communication, Education, Entertainment, Science, Medicine, Engineering, Distance Learning, Weather Forecasting. Carrier Searching and so on.
My project named “Event Management System” is software that store and maintained all events coordinated in college. It also helpful to print related reports. My project will help to record the events coordinated by faculties with their Name, Event subject, date & details in an efficient & effective ways.
In my system we have to make a system by which a user can record all events coordinated by a particular faculty. In our proposed system some more featured are added which differs it from the existing system such as security.
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AIRCRAFT GENERAL
The Single Aisle is the most advanced family aircraft in service today, with fly-by-wire flight controls.
The A318, A319, A320 and A321 are twin-engine subsonic medium range aircraft.
The family offers a choice of engines
Democratizing Fuzzing at Scale by Abhishek Aryaabh.arya
Presented at NUS: Fuzzing and Software Security Summer School 2024
This keynote talks about the democratization of fuzzing at scale, highlighting the collaboration between open source communities, academia, and industry to advance the field of fuzzing. It delves into the history of fuzzing, the development of scalable fuzzing platforms, and the empowerment of community-driven research. The talk will further discuss recent advancements leveraging AI/ML and offer insights into the future evolution of the fuzzing landscape.
Vaccine management system project report documentation..pdfKamal Acharya
The Division of Vaccine and Immunization is facing increasing difficulty monitoring vaccines and other commodities distribution once they have been distributed from the national stores. With the introduction of new vaccines, more challenges have been anticipated with this additions posing serious threat to the already over strained vaccine supply chain system in Kenya.
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Learn about the cost savings, reduced environmental impact, and minimal disruption associated with trenchless technology. Discover detailed explanations of popular techniques such as pipe bursting, cured-in-place pipe (CIPP) lining, and directional drilling. Understand how these methods can be applied to various types of infrastructure, from residential plumbing to large-scale municipal systems.
Ideal for homeowners, contractors, engineers, and anyone interested in modern plumbing solutions, this guide provides valuable insights into why trenchless pipe repair is becoming the preferred choice for pipe rehabilitation. Stay informed about the latest advancements and best practices in the field.
Sachpazis:Terzaghi Bearing Capacity Estimation in simple terms with Calculati...Dr.Costas Sachpazis
Terzaghi's soil bearing capacity theory, developed by Karl Terzaghi, is a fundamental principle in geotechnical engineering used to determine the bearing capacity of shallow foundations. This theory provides a method to calculate the ultimate bearing capacity of soil, which is the maximum load per unit area that the soil can support without undergoing shear failure. The Calculation HTML Code included.
Saudi Arabia stands as a titan in the global energy landscape, renowned for its abundant oil and gas resources. It's the largest exporter of petroleum and holds some of the world's most significant reserves. Let's delve into the top 10 oil and gas projects shaping Saudi Arabia's energy future in 2024.
Top 10 Oil and Gas Projects in Saudi Arabia 2024.pdf
ON OPTIMIZATION OF MANUFACTURING OF FIELD-EFFECT HETERO TRANSISTORS A THREE STAGE AMPLIFIER CIRCUIT, TO INCREASE THEIR DENSITY
1. International Journal of Electronic Design and Test (JEDT) Vol.1 No.2
1
ON OPTIMIZATION OF MANUFACTURING OF
FIELD-EFFECT HETEROTRANSISTORS A THREE-
STAGE AMPLIFIER CIRCUIT, TO INCREASE THEIR
DENSITY
E.L. Pankratov
Nizhny Novgorod State University, 23 Gagarin avenue, Nizhny Novgorod, 603950,
Russia
ABSTRACT
In this paper we introduce an approach to increase density of field-effect heterotransistors framework a
three-stage amplifier circuit. At the same time one can obtain decreasing of dimensions of the above tran-
sistors. Dimensions of the elements will be decreased due to manufacture heterostructure with specific
structure, doping of required areas of the heterostructure by diffusion or ion implantation and optimization
of annealing of dopant and/or radiation defects.
Keywords:
.
field-effect heterotransistors; three-stage amplifier circuit; optimization of technological process; ana-
lytical approach for modeling.
1. INTRODUCTION
Currently density of elements of integrated circuits and their performance intensively increasing.
Simultaneously with increasing of the density of the elements of integrated circuit their dimen-
sions decreases. One way to decrease dimensions of these elements of these integrated circuit is
manufacturing of these elements in thin-film heterostructures [1-4]. An alternative approach to
decrease dimensions of the elements of integrated circuits is using laser and microwave types an-
nealing [5-7]. Using these types of annealing leads to generation inhomogeneous distribution of
temperature. Due to Arrhenius law the inhomogeneity of the diffusion coefficient and other pa-
rameters of process. The in homogeneity gives us possibility to decrease dimensions of elements
of integrated circuits. Changing of properties of electronic materials could be obtain by using rad-
iation processing of these materials [8,9].
In this paper we consider a three-stage amplifier circuit described in Ref. [10] (see Fig.1). We
assume, that element of the considered circuit has been manufactured in heterostructure from Fig.
1. The heterostructure consist of a substrate and an epitaxial layer. The epitaxial layer includes
into itself several sections manufactured by using another materials. The sections have been
doped by diffusion or ion implantation to generation into these sections required type of conduc-
tivity (n or p). Framework this paper we analyzed redistribution of dopant during annealing of
dopant and/or radiation defects to formulate conditions for decreasing of dimensions of the consi-
dered circuit.
2. International Journal of Electronic Design and Test (JEDT) Vol.1 No.2
2
S G D
Fig. 1a. Circuit of the three-stage amplifier circuit [10]
Source Channel Drain DrainChannelSource
Fig. 1b. Heterostructure with two layers and sections in the epitaxial layer
2. METHOD OF SOLUTION
We determine spatio-temporal distribution of concentration of dopant by solving the following
boundary problem
( )=
t
tzyxC
∂
∂ ,,, ( ) ( ) ( )
+
+
=
z
tzyxC
D
zy
tzyxC
D
yx
tzyxC
D
x
CCC
∂
∂
∂
∂
∂
∂
∂
∂
∂
∂
∂
∂ ,,,,,,,,,
(1)
with boundary and initial conditions
( ) 0
,,,
0
=
∂
∂
=x
x
tzyxC
,
( ) 0
,,,
=
∂
∂
= xLx
x
tzyxC
,
( ) 0
,,,
0
=
∂
∂
=y
y
tzyxC
, (2)
( ) 0
,,,
=
∂
∂
= yLx
y
tzyxC
,
( ) 0
,,,
0
=
∂
∂
=z
z
tzyxC
,
( ) 0
,,,
=
∂
∂
= zLx
z
tzyxC
,
C(x,y,z,0)=f (x,y,z).
Here C(x,y,z,t) is the spatio-temporal distribution of concentration of dopant; T is the temperature
of annealing; DС is the dopant diffusion coefficient. Value of dopant diffusion coefficient depends
on properties of materials, speed of heating and cooling of heterostructure (with account Arrhe-
nius law). Dependences of dopant diffusion coefficients could be approximated by the following
function [9,11,12]
3. International Journal of Electronic Design and Test (JEDT) Vol.1 No.2
3
( ) ( )
( )
( ) ( )
( )
++
+= 2*
2
2*1
,,,,,,
1
,,,
,,,
1,,,
V
tzyxV
V
tzyxV
TzyxP
tzyxC
TzyxDD LC
ςςξ γ
γ
, (3)
where DL (x,y,z,T) is the spatial (due to existing several layers wit different properties in hetero-
structure) and temperature (due to Arrhenius law) dependences of dopant diffusion coefficient; P
(x,y,z,T) is the limit of solubility of dopant; parameter γ could be integer framework the following
interval γ ∈[1,3] [9]; V (x,y,z,t) is the spatio-temporal distribution of concentration of radiation
vacancies; V*
is the equilibrium distribution of concentration of vacancies. Concentration depen-
dence of dopant diffusion coefficient have been discussed in details in [9]. It should be noted, that
using diffusion type of doping did not leads to generation radiation defects and ζ1=ζ2=0. We de-
termine spatio-temporal distributions of concentrations of point defects have been determine by
solving the following system of equations [11,12]
( ) ( ) ( ) ( ) ( ) +
∂
∂
∂
∂
+
∂
∂
∂
∂
=
∂
∂
y
tzyxI
TzyxD
yx
tzyxI
TzyxD
xt
tzyxI
II
,,,
,,,
,,,
,,,
,,,
( ) ( ) ( ) ( ) ( )−−
∂
∂
∂
∂
+ tzyxVtzyxITzyxk
z
tzyxI
TzyxD
z
VII ,,,,,,,,,
,,,
,,, ,
( ) ( )tzyxITzyxk II ,,,,,, 2
,− (4)
( ) ( ) ( ) ( ) ( ) +
∂
∂
∂
∂
+
∂
∂
∂
∂
=
∂
∂
y
tzyxV
TzyxD
yx
tzyxV
TzyxD
xt
tzyxV
VV
,,,
,,,
,,,
,,,
,,,
( ) ( ) ( ) ( ) ( )−−
∂
∂
∂
∂
+ tzyxVtzyxITzyxk
z
tzyxV
TzyxD
z
VIV ,,,,,,,,,
,,,
,,, ,
( ) ( )tzyxVTzyxk VV ,,,,,, 2
,−
with boundary and initial conditions
( ) 0
,,,
0
=
∂
∂
=x
x
tzyxρ
,
( ) 0
,,,
=
∂
∂
= xLx
x
tzyxρ
,
( ) 0
,,,
0
=
∂
∂
=y
y
tzyxρ
,
( ) 0
,,,
=
∂
∂
= yLy
y
tzyxρ
,
( ) 0
,,,
0
=
∂
∂
=z
z
tzyxρ
,
( ) 0
,,,
=
∂
∂
= zLz
z
tzyxρ
, ρ (x,y,z,0)=fρ (x,y,z). (5)
Here ρ=I,V; I(x,y,z,t) is the spatio-temporal distribution of concentration of radiation interstitials;
Dρ(x,y,z,T) is the diffusion coefficients of radiation interstitials and vacancies; terms V2
(x,y,z,t) and
I2
(x,y,z,t) correspond to generation of divacancies and diinterstitials; kI,V(x,y,z,T) is the parameter
of recombination of point radiation defects; kρ,ρ(x,y,z,T) are the parameters of generation of sim-
plest complexes of point radiation defects.
4. International Journal of Electronic Design and Test (JEDT) Vol.1 No.2
4
We determine spatio-temporal distributions of concentrations of divacancies ΦV (x, y,z,t) and diin-
terstitials ΦI(x,y,z,t) by solving the following system of equations [11,12]
( ) ( ) ( ) ( ) ( ) +
Φ
+
Φ
=
Φ
ΦΦ
y
tzyx
TzyxD
yx
tzyx
TzyxD
xt
tzyx III
II
∂
∂
∂
∂
∂
∂
∂
∂
∂
∂ ,,,
,,,
,,,
,,,
,,,
( ) ( ) ( ) ( ) ( ) ( )tzyxITzyxktzyxITzyxk
z
tzyx
TzyxD
z
III
I
I
,,,,,,,,,,,,
,,,
,,, 2
, −+
Φ
+ Φ
∂
∂
∂
∂
(6)
( ) ( ) ( ) ( ) ( ) +
Φ
+
Φ
=
Φ
ΦΦ
y
tzyx
TzyxD
yx
tzyx
TzyxD
xt
tzyx VVV
VV
∂
∂
∂
∂
∂
∂
∂
∂
∂
∂ ,,,
,,,
,,,
,,,
,,,
( ) ( ) ( ) ( ) ( ) ( )tzyxVTzyxktzyxVTzyxk
z
tzyx
TzyxD
z
VVV
V
V
,,,,,,,,,,,,
,,,
,,, 2
, −+
Φ
+ Φ
∂
∂
∂
∂
with boundary and initial conditions
( )
0
,,,
0
=
∂
Φ∂
=x
x
tzyxρ
,
( )
0
,,,
=
∂
Φ∂
= xLx
x
tzyxρ
,
( )
0
,,,
0
=
∂
Φ∂
=y
y
tzyxρ
,
( )
0
,,,
=
∂
Φ∂
= yLy
y
tzyxρ
,
( )
0
,,,
0
=
∂
Φ∂
=z
z
tzyxρ
,
( )
0
,,,
=
∂
Φ∂
= zLz
z
tzyxρ
, (7)
ΦI(x,y,z,0)=fΦI(x,y,z), ΦV(x,y,z,0)=fΦV(x,y,z).
Here DΦρ(x,y,z,T) are the diffusion coefficients of complexes of radiation defects; kρ(x,y,z,T) are
the parameters of decay of complexes of radiation defects.
We determine spatio-temporal distributions of concentrations of dopant and radiation defects by
using method of averaging of function corrections [13] with decreased quantity of iteration steps
[14]. Framework the approach we used solutions of Eqs. (1), (4) and (6) in linear form and with
averaged values of diffusion coefficients D0L, D0I, D0V, D0ΦI, D0ΦV as initial-order approximations
of the required concentrations. The solutions could be written as
( ) ( ) ( ) ( ) ( )∑+=
∞
=1
0
1
2
,,,
n
nCnnnnC
zyxzyx
C
tezcycxcF
LLLLLL
F
tzyxC ,
( ) ( ) ( ) ( ) ( )∑+=
∞
=1
0
1
2
,,,
n
nInnnnI
zyxzyx
I
tezcycxcF
LLLLLL
F
tzyxI ,
( ) ( ) ( ) ( ) ( )∑+=
∞
=1
0
1
2
,,,
n
nVnnnnC
zyxzyx
C
tezcycxcF
LLLLLL
F
tzyxV ,
5. International Journal of Electronic Design and Test (JEDT) Vol.1 No.2
5
( ) ( ) ( ) ( ) ( )∑+=Φ
∞
=
ΦΦ
Φ
1
0
1
2
,,,
n
nnnnn
zyxzyx
I tezcycxcF
LLLLLL
F
tzyx II
I
,
( ) ( ) ( ) ( ) ( )∑+=Φ
∞
=
ΦΦ
Φ
1
0
1
2
,,,
n
nnnnn
zyxzyx
V tezcycxcF
LLLLLL
F
tzyx VV
V
,
Where
( )
++−= 2220
22 111
exp
zyx
n
LLL
tDnte ρρ π ,
( ) ( ) ( ) ( )∫ ∫ ∫=
x y zL L L
nnnn udvdwdwvufvcvcucF
0 0 0
,,ρρ , cn(χ)=cos(π nχ/Lχ).
The second-order approximations and approximations with higher orders of concentrations of
dopant and radiation defects we determine framework standard iterative procedure [13,14].
Framework this procedure to calculate approximations with the n-order one shall replace the
functions C(x,y,z,t), I(x,y,z,t), V(x,y,z,t), ΦI(x,y,z,t), ΦV(x,y, z,t) in the right sides of the Eqs. (1),
(4) and (6) on the following sums αnρ+ρ n-1(x,y,z, t). As an example we present equations for the
second-order approximations of the considered concentrations
( ) ( ) ( )
( )
( )[ ]
( )
×
+
+
++=
∗∗
TzyxP
tzyxC
V
tzyxV
V
tzyxV
xt
tzyxC C
,,,
,,,
1
,,,,,,
1
,,, 12
2
2
21
2
γ
γ
α
ξςς
∂
∂
∂
∂
( ) ( ) ( ) ( ) ( )
( )
×
+++
× ∗∗ 2
2
21
1
,,,,,,
1,,,
,,,
,,,
V
tzyxV
V
tzyxV
TzyxD
yx
tzyxC
TzyxD LL
ςς
∂
∂
∂
∂
( )[ ]
( )
( ) ( ) ( )
×+
+
+×
z
tzyxC
TzyxD
zy
tzyxC
TzyxP
tzyxC
L
C
∂
∂
∂
∂
∂
∂α
ξ γ
γ
,,,
,,,
,,,
,,,
,,,
1 1112
( ) ( )
( )
( )[ ]
( )
+
+
++× ∗∗
TzyxP
tzyxC
V
tzyxV
V
tzyxV C
,,,
,,,
1
,,,,,,
1 12
2
2
21 γ
γ
α
ξςς (8)
( ) ( ) ( ) ( ) ( ) +
+
=
y
tzyxI
TzyxD
yx
tzyxI
TzyxD
xt
tzyxI
II
∂
∂
∂
∂
∂
∂
∂
∂
∂
∂ ,,,
,,,
,,,
,,,
,,, 112
( ) ( ) ( )[ ] ( )[ ]×++−
+ tzyxVtzyxI
z
tzyxI
TzyxD
z
VII ,,,,,,
,,,
,,, 1212
1
αα
∂
∂
∂
∂
( ) ( ) ( )[ ]2
12,,
,,,,,,,,, tzyxITzyxkTzyxk IIIVI
+−× α (9)
( ) ( ) ( ) ( ) ( ) +
+
=
y
tzyxV
TzyxD
yx
tzyxV
TzyxD
xt
tzyxV
VV
∂
∂
∂
∂
∂
∂
∂
∂
∂
∂ ,,,
,,,
,,,
,,,
,,, 112
6. International Journal of Electronic Design and Test (JEDT) Vol.1 No.2
6
( ) ( ) ( )[ ] ( )[ ]×++−
+ tzyxVtzyxI
z
tzyxV
TzyxD
z
VIV ,,,,,,
,,,
,,, 1212
1
αα
∂
∂
∂
∂
( ) ( ) ( )[ ]2
12,, ,,,,,,,,, tzyxVTzyxkTzyxk VVVVI +−× α
( ) ( ) ( ) ( )
×+
Φ
=
Φ
ΦΦ TzyxD
yx
tzyx
TzyxD
xt
tzyx
II
II
,,,
,,,
,,,
,,, 12
∂
∂
∂
∂
∂
∂
∂
∂
( ) ( ) ( ) ( )×+
Φ
+
Φ
× Φ Tzyxk
z
tzyx
TzyxD
zy
tzyx
II
II
I
,,,
,,,
,,,
,,,
,
11
∂
∂
∂
∂
∂
∂
( ) ( ) ( )tzyxITzyxktzyxI I ,,,,,,,,,2
−× (10)
( ) ( ) ( ) ( )
×+
Φ
=
Φ
ΦΦ TzyxD
yx
tzyx
TzyxD
xt
tzyx
VV
VV
,,,
,,,
,,,
,,, 12
∂
∂
∂
∂
∂
∂
∂
∂
( ) ( ) ( ) ( )×+
Φ
+
Φ
× Φ Tzyxk
z
tzyx
TzyxD
zy
tzyx
VV
VI
V
,,,
,,,
,,,
,,,
,
11
∂
∂
∂
∂
∂
∂
( ) ( ) ( )tzyxVTzyxktzyxV V ,,,,,,,,,2
−× .
Integration of the left and right sides of Eqs.(8)-(10) gives us possibility to obtain relations for the
second-order approximations of concentrations of dopant and radiation defects in final form
( ) ( ) ( )
( )
( )[ ]
( )
∫ ×
+
+
++=
∗∗
t
C
TzyxP
zyxC
V
zyxV
V
zyxV
x
tzyxC
0
12
2
2
212
,,,
,,,
1
,,,,,,
1,,, γ
γ
τα
ξ
τ
ς
τ
ς
∂
∂
( ) ( ) ( ) ( )
( )
∫ ×
+++
×
∗∗
t
L
V
zyxV
V
zyxV
y
d
x
zyxC
TzyxD
0
2
2
21
1 ,,,,,,
1
,,,
,,,
τ
ς
τ
ς
∂
∂
τ
∂
τ∂
( ) ( )[ ]
( )
( ) ( )
∫ ×+
+
+×
t
L
C
L TzyxD
z
d
y
zyxC
TzyxP
zyxC
TzyxD
0
112
,,,
,,,
,,,
,,,
1,,,
∂
∂
τ
∂
τ∂τα
ξ γ
γ
( ) ( )
( )
( )[ ]
( )
( ) +
+
+
++× ∗∗
τ
∂
τ∂τα
ξ
τ
ς
τ
ς γ
γ
d
z
zyxC
TzyxP
zyxC
V
zyxV
V
zyxV C ,,,
,,,
,,,
1
,,,,,,
1 112
2
2
21
( )zyxfC ,,+ (8a)
( ) ( ) ( ) ( )
∫ ×+
∫=
t
I
t
I TzyxD
y
d
x
zyxI
TzyxD
x
tzyxI
00
1
2 ,,,
,,,
,,,,,,
∂
∂
τ
∂
τ∂
∂
∂
( ) ( ) ( ) ( )×∫−
∫+
×
t
II
t
I Tzyxkd
z
zyxI
TzyxD
z
d
y
zyxI
0
,
0
11
,,,
,,,
,,,
,,,
τ
∂
τ∂
∂
∂
τ
∂
τ∂
7. International Journal of Electronic Design and Test (JEDT) Vol.1 No.2
7
( )[ ] ( ) ( ) ( )[ ]×∫ +−++×
t
IVIII zyxITzyxkzyxfdzyxI
0
12,
2
12 ,,,,,,,,,,, ταττα
( )[ ] ττα dzyxVV ,,,12 +× (9a)
( ) ( ) ( ) ( )
∫ ×+
∫=
t
V
t
V TzyxD
y
d
x
zyxV
TzyxD
x
tzyxV
00
1
2 ,,,
,,,
,,,,,,
∂
∂
τ
∂
τ∂
∂
∂
( ) ( ) ( ) ( )×∫−
∫+
×
t
VV
t
V Tzyxkd
z
zyxV
TzyxD
z
d
y
zyxV
0
,
0
11
,,,
,,,
,,,
,,,
τ
∂
τ∂
∂
∂
τ
∂
τ∂
( )[ ] ( ) ( ) ( )[ ]×∫ +−++×
t
IVIVI zyxITzyxkzyxfdzyxV
0
12,
2
12 ,,,,,,,,,,, ταττα
( )[ ] ττα dzyxVV ,,,12 +×
( ) ( ) ( ) ( )
∫ ×+
∫
Φ
=Φ ΦΦ
tt
I
I TzyxD
y
d
x
zyx
TzyxD
x
tzyx II
00
1
2 ,,,
,,,
,,,,,,
∂
∂
τ
∂
τ∂
∂
∂
( ) ( ) ( ) ( )×∫+
∫
Φ
+
Φ
× Φ
t
II
t
II
Tzyxkd
z
zyx
TzyxD
z
d
y
zyx
I
0
,
0
11
,,,
,,,
,,,
,,,
τ
∂
τ∂
∂
∂
τ
∂
τ∂
( ) ( ) ( ) ( )zyxfdzyxITzyxkdzyxI I
t
I ,,,,,,,,,,,
0
2
Φ+∫−× ττττ (10a)
( ) ( ) ( ) ( )
∫ ×+
∫
Φ
=Φ ΦΦ
tt
V
V TzyxD
y
d
x
zyx
TzyxD
x
tzyx VV
00
1
2 ,,,
,,,
,,,,,,
∂
∂
τ
∂
τ∂
∂
∂
( ) ( ) ( ) ( )×∫+
∫
Φ
+
Φ
× Φ
t
VV
t
VI
Tzyxkd
z
zyx
TzyxD
z
d
y
zyx
V
0
,
0
11
,,,
,,,
,,,
,,,
τ
∂
τ∂
∂
∂
τ
∂
τ∂
( ) ( ) ( ) ( )zyxfdzyxVTzyxkdzyxV V
t
V ,,,,,,,,,,,
0
2
Φ+∫−× ττττ
We determine average values of the second-orders approximations of the considered concentra-
tions by using the following standard relations [13,14]
( ) ( )[ ]∫ ∫ ∫ ∫ −
Θ
=
Θ
0 0 0 0
122 ,,,,,,
1 x y zL L L
zyx
tdxdydzdtzyxtzyx
LLL
ρρα ρ . (11)
Substitution of relations (8a)-(10a) into relation (11) gives us possibility to obtain relations for
the required average values α2ρ
( )∫ ∫ ∫=
x y zL L L
C
zyx
С xdydzdzyxf
LLL 0 0 0
2 ,,
1
α , (12)
( ) [{ −+−−+++= 112010200
2
0021001
00
2 41
2
1
IVIIIVVIIIVVIIIV
II
I AAAAAAA
A
ααα
8. International Journal of Electronic Design and Test (JEDT) Vol.1 No.2
8
( )
00
0021001
2
1
0 0 0 2
1
,,
1
II
IVVIIIV
L L L
I
zyx A
AAA
xdydzdzyxf
LLL
x y z α+++
−
∫ ∫ ∫− (13a)
( )
4
313
4
2
3
4
2
4
4
42
1
B
AB
A
ByB
yB
AB
B
V
+
−
−
+−
+
=α , (13b)
where ( ) ( ) ( ) ( )∫ ∫ ∫ ∫−Θ
Θ
=
Θ
0 0 0 0
11, ,,,,,,,,,
1 x y zL L L
ji
ba
zyx
abij tdxdydzdtzyxVtzyxITzyxkt
LLL
A ,
( )2
0000
2
00
2
00
2
004 2 VVIIIVIVIV AAAAAB −−= ,
−++= 2
001000
3
0001
2
00003 IVIIIVIVIVIVIV AAAAAAAB
( ) ( ) ( )[ ]−++−+++−− 121224 10100010010000010000
2
00 VVIVIIIIIVIVIVIVVVIIIV AAAAAAAAAAA
2
000100
2
000010 24 IVIVIVIVIIIV AAAAAA +− ,
( ){ ×++++= 00
2
01
2
00
2
1001
2
002 1 IVIVIVIIIVIV AAAAAAB
( )
×−−−−++×
zyx
IIIVIIIIIVIIIVIVIVIVIV
LLL
AAAAAAAAAAA
1
442 2011000010100001000000
( ) ( ) ([{ ++−+++
∫ ∫ ∫× 12122,, 10001001000001
0 0 0
IVIIIIIVIVIVIV
L L L
I AAAAAAAxdydzdzyxf
x y z
)] ( ) ( ) (
−−∫ ∫ ∫+++++ 2000
0 0 0
100101
2
10 2,,
2
12 VVII
L L L
V
zyx
IIIVIVVV AAxdydzdzyxf
LLL
AAAA
x y z
) ( )] ( ) ([ ++−++++++− 122121 1000000110010010010111 IVIIIVIVIIIVIVIIIVIVIV AAAAAAAAAAA
)]}10VVA+ , ( ) ( )
×∫ ∫ ∫−−++=
x y zL L L
I
x
IVIIIVIVIV xdydzdzyxf
L
AAAAAB
0 0 0
11
2
100101001 ,,
1
812
( )−−++++
−× 00101000010000
2
0100010020 4
1
IIIVIIIVIVIVIVIVIIIVIVII
zy
AAAAAAAAAAAA
LL
( ) ( ) ( )
+−−+++∫ ∫ ∫− 112000100101
0 0 0
00
21,,
2
2 IVVVIIIIIVIV
L L L
I
zyx
II
AAAAAAxdydzdzyxf
LLL
A x y z
( )] ( ) ( )[ ]0001001010100100100101 212121 IVIVIIVVIVIIIVIVIIIVIV AAAAAAAAAAA +++−+++++ ,
( ) ( +++
−∫ ∫ ∫+= 1001
2
0111
0 0 0
20
2
01000 ,,
1
4 IIIVIVIV
L L L
I
zyx
IIIVII AAAAxdydzdzyxf
LLL
AAAB
x y z
) ( ) ( ) ( )
+−−+++∫ ∫ ∫−+ 112000100101
0 0 0
002
21,,
2
1 IVVVIIIIIVIV
L L L
V
zyx
II
AAAAAAxdydzdzyxf
LLL
A x y z
9. International Journal of Electronic Design and Test (JEDT) Vol.1 No.2
9
( )]2
100101 1 IIIVIV AAA +++ ,
6
23 323 32 B
qpqqpqy +++−−+= ,
( )×−= 031 82 BBBq
( )
8
4
21648
2
1
2
320
3
22 BBBBBB −−
++× , ( )[ ] 722823 2
2031 BBBBp −−= ,
2
2
3 48 BByA −+= ,
( ) ( ) ( ) +∫ ∫ ∫ ∫−Θ
Θ
−=
Θ
Φ
0 0 0 0
202 ,,,,,,
1 x y z
I
L L L
I
zyx
II tdxdydzdtzyxITzyxkt
LLL
Aα
( )∫ ∫ ∫+ Φ
x y zL L L
I
zyx
xdydzdzyxf
LLL 0 0 0
,,
1
(14)
( ) ( ) ( ) +∫ ∫ ∫ ∫−Θ
Θ
−=
Θ
Φ
0 0 0 0
202 ,,,,,,
1 x y z
V
L L L
V
zyx
VV tdxdydzdtzyxVTzyxkt
LLL
Aα
( )∫ ∫ ∫+ Φ
x y zL L L
V
zyx
xdydzdzyxf
LLL 0 0 0
,,
1
.
The considered substitution gives us possibility to obtain equation for parameter α2C. Solution of
the equation depends on value of parameter γ. Analysis of spatio-temporal distributions of con-
centrations of dopant and radiation defects has been done by using their second-order approxima-
tions framework the method of averaged of function corrections with decreased quantity of itera-
tive steps. The second-order approximation is usually enough good approximation to make qualit-
ative analysis and obtain some quantitative results. Results of analytical calculation have been
checked by comparison with results of numerical simulation.
3. DISCUSSION
In this section we analyzed the spatio-temporal distribution of concentration of dopant in the con-
sidered heterostructure during annealing. Figs. 2 shows spatial distributions of concentrations of
dopants infused (Fig. 2a) or implanted (Fig. 2b) in epitaxial layer. Value of annealing time is
equal for all distributions framework every figure 2a and 2b. Increasing of number of curves cor-
responds to increasing of difference between values of dopant diffusion coefficients in layers of
heterostructure. The figures show that presents of interface between layers of heterostructure
gives us possibility to increase absolute value of gradient of concentration of dopant in direction,
which is perpendicular to the interface. We obtain increasing of absolute value of the gradient in
neighborhood of the interface. Due to the increasing one can obtain decreasing dimensions of
transistors, which have been used in the pass transistor multiplexer circuit. At the same time with
increasing of the gradient homogeneity of concentration of dopant in enriched area increases.
10. International Journal of Electronic Design and Test (JEDT) Vol.1 No.2
10
Fig.2a. Distributions of concentration of infused dopant in heterostructure
from Figs. 1 and 2 in direction, which is perpendicular to interface between epitaxial layer sub-
strate. Increasing of number of curve corresponds to increasing of difference between values of
dopant diffusion coefficient in layers of heterostructure under condition, when value of dopant
diffusion coefficient in epitaxial layer is larger, than value of dopant diffusion coefficient in sub-
strate
x
0.0
0.5
1.0
1.5
2.0
C(x,Θ)
2
3
4
1
0 L/4 L/2 3L/4 L
Epitaxial layer Substrate
Fig.2b. Distributions of concentration of implanted dopant in heterostructure
from Figs. 1 and 2 in direction, which is perpendicular to interface between epitaxial layer sub-
strate. Curves 1 and 3 corresponds to annealing time Θ = 0.0048(Lx
2
+Ly
2
+Lz
2
)/D0. Curves 2 and 4
corresponds to annealing time Θ = 0.0057(Lx
2
+Ly
2
+Lz
2
)/D0. Curves 1 and 2 corresponds to homo-
genous sample. Curves 3 and 4 corresponds to heterostructure under condition, when value of
dopant diffusion coefficient in epitaxial layer is larger, than value of dopant diffusion coefficient
in substrate
To choose annealing time it should be accounted decreasing of absolute value of gradient of con-
centration of dopant in neighborhood of interface between substrate and epitaxial layer with in-
creasing of annealing time. Decreasing of value of annealing time leads to decreasing of homo-
geneity of concentration of dopant in enriched area (see Fig. 3a for diffusion doping of materials
and Fig. 3b for ion doping of materials). Let us determine compromise value of annealing time
framework recently introduced criteria [15-20]. Framework the criteria we approximate real dis-
tributions of concentration of dopant by ideal rectangle distribution ψ (x,y,z). Farther we deter-
mine compromise value of annealing time by minimization of the mean-squared error
11. International Journal of Electronic Design and Test (JEDT) Vol.1 No.2
11
C(x,Θ)
0 Lx
2
1
3
4
Fig. 3a. Spatial distributions of dopant in heterostructure after dopant infusion.
Curve 1 is idealized distribution of dopant. Curves 2-4 are real distributions of dopant for differ-
ent values of annealing time. Increasing of number of curve corresponds to increasing of anneal-
ing time
x
C(x,Θ)
1
2
3
4
0 L
Fig.3b. Spatial distributions of dopant in heterostructure after ion implantation.
Curve 1 is idealized distribution of dopant. Curves 2-4 are real distributions of dopant for differ-
ent values of annealing time. Increasing of number of curve corresponds to increasing of anneal-
ing time
( ) ( )[ ]∫ ∫ ∫ −Θ=
x y zL L L
zyx
xdydzdzyxzyxC
LLL
U
0 0 0
,,,,,
1
ψ . (15)
0.0 0.1 0.2 0.3 0.4 0.5
a/L, ξ, ε, γ
0.0
0.1
0.2
0.3
0.4
0.5
ΘD0
L
-2
3
2
4
1
Fig.4a. Dependences of dimensionless optimal annealing time for doping by diffusion, which have been
obtained by minimization of mean-squared error, on several parameters.
Curve 1 is the dependence of dimensionless optimal annealing time on the relation a/L and ξ=γ=
0 for equal to each other values of dopant diffusion coefficient in all parts of heterostructure.
Curve 2 is the dependence of dimensionless optimal annealing time on value of parameter ε for
a/L=1/2 and ξ=γ=0. Curve 3 is the dependence of dimensionless optimal annealing time on value
12. International Journal of Electronic Design and Test (JEDT) Vol.1 No.2
12
of parameter ξ for a/L =1/2 and ε=γ=0. Curve 4 is the dependence of dimensionless optimal an-
nealing time on value of parameter γ for a/L=1/2 and ε=ξ=0
0.0 0.1 0.2 0.3 0.4 0.5
a/L, ξ, ε, γ
0.00
0.04
0.08
0.12
ΘD0
L
-2
3
2
4
1
Fig.4b. Dependences of dimensionless optimal annealing time for doping by ion implantation, which have
been obtained by minimization of mean-squared error, on several parameters.
Curve 1 is the dependence of dimensionless optimal annealing time on the relation a/L and ξ=γ=0
for equal to each other values of dopant diffusion coefficient in all parts of heterostructure. Curve
2 is the dependence of dimensionless optimal annealing time on value of parameter ε for a/L=1/2
and ξ=γ=0. Curve 3 is the dependence of dimensionless optimal annealing time on value of pa-
rameter ξ for a/L =1/2 and ε=γ=0. Curve 4 is the dependence of dimensionless optimal annealing
time on value of parameter γ for a/L=1/2 and ε=ξ=0
Dependences of optimal annealing time are presented on Figs. 4 for diffusion and ion types of
doping, respectively. It should be noted, that it is necessary to anneal radiation defects after ion
implantation. One could find spreading of concentration of distribution of dopant during this an-
nealing. In the ideal case distribution of dopant achieves appropriate interfaces between materials
of heterostructure during annealing of radiation defects. If dopant did not achieves any interfaces
during annealing of radiation defects, it is practicably to additionally anneal the dopant. In this
situation optimal value of additional annealing time of implanted dopant is smaller, than anneal-
ing time of infused dopant. At the same time ion type of doping gives us possibility to decrease
mismatch-induced stress in heterostructure [21].
4. CONCLUSION
In this paper we model redistribution of infused and implanted dopants during manufacture the
three-stage amplifier circuit on field-effect heterotransistors. Several recommendations to optim-
ize manufacture the heterotransistors have been formulated. Analytical approach to model diffu-
sion and ion types of doping with account concurrent changing of parameters in space and time
has been introduced. At the same time the approach gives us possibility to take into account non-
linearity of doping processes.
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![International Journal of Electronic Design and Test (JEDT) Vol.1 No.2
1
ON OPTIMIZATION OF MANUFACTURING OF
FIELD-EFFECT HETEROTRANSISTORS A THREE-
STAGE AMPLIFIER CIRCUIT, TO INCREASE THEIR
DENSITY
E.L. Pankratov
Nizhny Novgorod State University, 23 Gagarin avenue, Nizhny Novgorod, 603950,
Russia
ABSTRACT
In this paper we introduce an approach to increase density of field-effect heterotransistors framework a
three-stage amplifier circuit. At the same time one can obtain decreasing of dimensions of the above tran-
sistors. Dimensions of the elements will be decreased due to manufacture heterostructure with specific
structure, doping of required areas of the heterostructure by diffusion or ion implantation and optimization
of annealing of dopant and/or radiation defects.
Keywords:
.
field-effect heterotransistors; three-stage amplifier circuit; optimization of technological process; ana-
lytical approach for modeling.
1. INTRODUCTION
Currently density of elements of integrated circuits and their performance intensively increasing.
Simultaneously with increasing of the density of the elements of integrated circuit their dimen-
sions decreases. One way to decrease dimensions of these elements of these integrated circuit is
manufacturing of these elements in thin-film heterostructures [1-4]. An alternative approach to
decrease dimensions of the elements of integrated circuits is using laser and microwave types an-
nealing [5-7]. Using these types of annealing leads to generation inhomogeneous distribution of
temperature. Due to Arrhenius law the inhomogeneity of the diffusion coefficient and other pa-
rameters of process. The in homogeneity gives us possibility to decrease dimensions of elements
of integrated circuits. Changing of properties of electronic materials could be obtain by using rad-
iation processing of these materials [8,9].
In this paper we consider a three-stage amplifier circuit described in Ref. [10] (see Fig.1). We
assume, that element of the considered circuit has been manufactured in heterostructure from Fig.
1. The heterostructure consist of a substrate and an epitaxial layer. The epitaxial layer includes
into itself several sections manufactured by using another materials. The sections have been
doped by diffusion or ion implantation to generation into these sections required type of conduc-
tivity (n or p). Framework this paper we analyzed redistribution of dopant during annealing of
dopant and/or radiation defects to formulate conditions for decreasing of dimensions of the consi-
dered circuit.](https://image.slidesharecdn.com/vol-190822121013/85/ON-OPTIMIZATION-OF-MANUFACTURING-OF-FIELD-EFFECT-HETERO-TRANSISTORS-A-THREE-STAGE-AMPLIFIER-CIRCUIT-TO-INCREASE-THEIR-DENSITY-1-320.jpg)
![International Journal of Electronic Design and Test (JEDT) Vol.1 No.2
2
S G D
Fig. 1a. Circuit of the three-stage amplifier circuit [10]
Source Channel Drain DrainChannelSource
Fig. 1b. Heterostructure with two layers and sections in the epitaxial layer
2. METHOD OF SOLUTION
We determine spatio-temporal distribution of concentration of dopant by solving the following
boundary problem
( )=
t
tzyxC
∂
∂ ,,, ( ) ( ) ( )
+
+
=
z
tzyxC
D
zy
tzyxC
D
yx
tzyxC
D
x
CCC
∂
∂
∂
∂
∂
∂
∂
∂
∂
∂
∂
∂ ,,,,,,,,,
(1)
with boundary and initial conditions
( ) 0
,,,
0
=
∂
∂
=x
x
tzyxC
,
( ) 0
,,,
=
∂
∂
= xLx
x
tzyxC
,
( ) 0
,,,
0
=
∂
∂
=y
y
tzyxC
, (2)
( ) 0
,,,
=
∂
∂
= yLx
y
tzyxC
,
( ) 0
,,,
0
=
∂
∂
=z
z
tzyxC
,
( ) 0
,,,
=
∂
∂
= zLx
z
tzyxC
,
C(x,y,z,0)=f (x,y,z).
Here C(x,y,z,t) is the spatio-temporal distribution of concentration of dopant; T is the temperature
of annealing; DС is the dopant diffusion coefficient. Value of dopant diffusion coefficient depends
on properties of materials, speed of heating and cooling of heterostructure (with account Arrhe-
nius law). Dependences of dopant diffusion coefficients could be approximated by the following
function [9,11,12]](data:image/gif;base64,R0lGODlhAQABAIAAAAAAAP///yH5BAEAAAAALAAAAAABAAEAAAIBRAA7)