This document presents an approach to increase vertical integration of transistor-transistor logic elements by considering a heterostructure with a specific configuration. The heterostructure consists of a substrate and several epitaxial layers with defined sections. These sections would be doped through diffusion or ion implantation and then annealed. Mathematical models are developed to determine the spatial and temporal distributions of dopant and radiation defect concentrations during this process. Solving these models allows optimization of dopant and defect annealing to decrease the dimensions of the transistor elements and increase integration density on the heterostructure.
ON OPTIMIZATION OF MANUFACTURING OF ELEMENTS OF AN BINARY-ROM CIRCUIT TO INCR...JaresJournal
In this paper we introduce an approach to increase integration rate of elements of an binary-ROM circuit. Framework the approach we consider a heterostructure with special configuration. Several specific areas of the heterostructure should be doped by diffusion or ion implantation. Annealing of dopant and/or radiation defects should be optimized.
ANALYSIS OF MANUFACTURING OF VOLTAGE RESTORE TO INCREASE DENSITY OF ELEMENTS ...ijoejournal
We introduce an approach for increasing density of voltage restore elements. The approach based on
manufacturing of a heterostructure, which consist of a substrate and an epitaxial layer with special configuration.
Several required sections of the layer should be doped by diffusion or ion implantation. After
that dopants and/or radiation defects should be annealed.
ON APPROACH TO INCREASE INTEGRATION RATE OF ELEMENTS OF AN COMPARATOR CIRCUITjedt_journal
In this paper we introduce an approach to increase integration rate of elements of an comparator circuit. Framework the approach we consider a heterostructure with special configuration. Several specific areas of the heterostructure should be doped by diffusion or ion implantation. Annealing of dopant and/or radiation defects should be optimized.
Optimization of technological process to decrease dimensions of circuits xor ...ijfcstjournal
The paper describes an approach of increasing of integration rate of elements of integrated circuits. The
approach has been illustrated by example of manufacturing of a circuit XOR. Framework the approach one
should manufacture a heterostructure with specific configuration. After that several special areas of the
heterostructure should be doped by diffusion and/or ion implantation and optimization of annealing of dopant
and/or radiation defects. We analyzed redistribution of dopant with account redistribution of radiation
defects to formulate recommendations to decrease dimensions of integrated circuits by using analytical
approaches of modeling of technological process.
On Approach to Increase Integration Rate of Elements of an Operational Amplif...BRNSS Publication Hub
In this paper, we introduce an approach to optimize manufacturing of an operational amplifier circuit based on field-effect transistors. Main aims of the optimization are (i) decreasing dimensions of elements of the considered operational amplifier and (ii) increasing of performance and reliability of the considered field-effect transistors. Dimensions of considered field-effect transistors will be decreased due to manufacture of these transistors framework heterostructure with specific structure, doping of required areas of the heterostructure by diffusion or ion implantation, and optimization of annealing of dopant and/or radiation defects. Performance and reliability of the above field-effect transistors could be increased by optimization of annealing of dopant and/or radiation defects and using inhomogeneity of properties of heterostructure. Choosing of inhomogeneity of properties of heterostructure leads to increasing of compactness of distribution of concentration of dopant. At the same time, one can obtain increasing of homogeneity of the above concentration. In this paper, we also introduce an analytical approach for prognosis of technological process of manufacturing of the considered operational amplifier. The approach gives a possibility to take into account variation of parameters of processes in space and at the same time in space. At the same time, one can take into account nonlinearity of the considered processes.
An Approach to Optimize Regimes of Manufacturing of Complementary Horizontal ...ijrap
In this paper we consider nonlinear model to describe manufacturing complementary horizontal field-effect heterotransistor. Based on analytical solution of the considered boundary problems some recommendations have been formulated to optimize technological processes.
ON OPTIMIZATION OF MANUFACTURING OF FIELD-EFFECT HETERO TRANSISTORS A THREE S...jedt_journal
In this paper we introduce an approach to increase density of field-effect hetero transistors framework a three-stage
amplifier circuit. At the same time one can obtain decreasing of dimensions of the above transistors. Dimensions of the elements will be decreased due to manufacture heterostructure with specific structure, doping of required areas of the hetero structure by diffusion or ion implantation and optimization of annealing of dopant and/or radiation defects.
OPTIMIZATION OF MANUFACTURING OF LOGICAL ELEMENTS "AND" MANUFACTURED BY USING...ijcsitcejournal
In this paper we introduce an approach to decrease dimensions of logical elements "AND" based on fieldeffect
heterotransistors. Framework the approach one shall consider a heterostructure with specific structure.
Several specific areas of the het
ON OPTIMIZATION OF MANUFACTURING OF ELEMENTS OF AN BINARY-ROM CIRCUIT TO INCR...JaresJournal
In this paper we introduce an approach to increase integration rate of elements of an binary-ROM circuit. Framework the approach we consider a heterostructure with special configuration. Several specific areas of the heterostructure should be doped by diffusion or ion implantation. Annealing of dopant and/or radiation defects should be optimized.
ANALYSIS OF MANUFACTURING OF VOLTAGE RESTORE TO INCREASE DENSITY OF ELEMENTS ...ijoejournal
We introduce an approach for increasing density of voltage restore elements. The approach based on
manufacturing of a heterostructure, which consist of a substrate and an epitaxial layer with special configuration.
Several required sections of the layer should be doped by diffusion or ion implantation. After
that dopants and/or radiation defects should be annealed.
ON APPROACH TO INCREASE INTEGRATION RATE OF ELEMENTS OF AN COMPARATOR CIRCUITjedt_journal
In this paper we introduce an approach to increase integration rate of elements of an comparator circuit. Framework the approach we consider a heterostructure with special configuration. Several specific areas of the heterostructure should be doped by diffusion or ion implantation. Annealing of dopant and/or radiation defects should be optimized.
Optimization of technological process to decrease dimensions of circuits xor ...ijfcstjournal
The paper describes an approach of increasing of integration rate of elements of integrated circuits. The
approach has been illustrated by example of manufacturing of a circuit XOR. Framework the approach one
should manufacture a heterostructure with specific configuration. After that several special areas of the
heterostructure should be doped by diffusion and/or ion implantation and optimization of annealing of dopant
and/or radiation defects. We analyzed redistribution of dopant with account redistribution of radiation
defects to formulate recommendations to decrease dimensions of integrated circuits by using analytical
approaches of modeling of technological process.
On Approach to Increase Integration Rate of Elements of an Operational Amplif...BRNSS Publication Hub
In this paper, we introduce an approach to optimize manufacturing of an operational amplifier circuit based on field-effect transistors. Main aims of the optimization are (i) decreasing dimensions of elements of the considered operational amplifier and (ii) increasing of performance and reliability of the considered field-effect transistors. Dimensions of considered field-effect transistors will be decreased due to manufacture of these transistors framework heterostructure with specific structure, doping of required areas of the heterostructure by diffusion or ion implantation, and optimization of annealing of dopant and/or radiation defects. Performance and reliability of the above field-effect transistors could be increased by optimization of annealing of dopant and/or radiation defects and using inhomogeneity of properties of heterostructure. Choosing of inhomogeneity of properties of heterostructure leads to increasing of compactness of distribution of concentration of dopant. At the same time, one can obtain increasing of homogeneity of the above concentration. In this paper, we also introduce an analytical approach for prognosis of technological process of manufacturing of the considered operational amplifier. The approach gives a possibility to take into account variation of parameters of processes in space and at the same time in space. At the same time, one can take into account nonlinearity of the considered processes.
An Approach to Optimize Regimes of Manufacturing of Complementary Horizontal ...ijrap
In this paper we consider nonlinear model to describe manufacturing complementary horizontal field-effect heterotransistor. Based on analytical solution of the considered boundary problems some recommendations have been formulated to optimize technological processes.
ON OPTIMIZATION OF MANUFACTURING OF FIELD-EFFECT HETERO TRANSISTORS A THREE S...jedt_journal
In this paper we introduce an approach to increase density of field-effect hetero transistors framework a three-stage
amplifier circuit. At the same time one can obtain decreasing of dimensions of the above transistors. Dimensions of the elements will be decreased due to manufacture heterostructure with specific structure, doping of required areas of the hetero structure by diffusion or ion implantation and optimization of annealing of dopant and/or radiation defects.
OPTIMIZATION OF MANUFACTURING OF LOGICAL ELEMENTS "AND" MANUFACTURED BY USING...ijcsitcejournal
In this paper we introduce an approach to decrease dimensions of logical elements "AND" based on fieldeffect
heterotransistors. Framework the approach one shall consider a heterostructure with specific structure.
Several specific areas of the het
ON OPTIMIZATION OF MANUFACTURING OF FIELD-EFFECT HETEROTRANSISTORS FRAMEWORK ...ijoejournal
In this paper we introduce an approach to increase density of field-effect transistors framework a voltage reference. Framework the approach we consider manufacturing the inverter in heterostructure with specific configuration. Several required areas of the heterostructure should be doped by diffusion or ion implantation. After that dopant and radiation defects should by annealed framework optimized scheme. We also consider an approach to decrease value of mismatch-induced stress in the considered heterostructure. We introduce an analytical approach to analyze mass and heat transport in heterostructures during manufacturing of integrated circuits with account mismatch-induced stress.
ON APPROACH OF OPTIMIZATION OF FORMATION OF INHOMOGENOUS DISTRIBUTIONS OF DOP...ijcsa
We introduce an approach of manufacturing of a field-effect heterotransistor with inhomogenous doping of channel. The inhomogenous distribution of concentration of dopant gives a possibility to change speed of transport of charge carriers and to decrease length of channel.
OPTIMIZATION OF MANUFACTURE OF FIELDEFFECT HETEROTRANSISTORS WITHOUT P-NJUNCT...ijrap
It has been recently shown, that manufacturing p-n-junctions, field-effect and bipolar transistors, thyristors
in a multilayer structure by diffusion or ion implantation under condition of optimization of dopant and/or
radiation defects leads to increasing of sharpness of p-n-junctions (both single p-n-junctions and p-njunctions,
which include into their system). In this situation one can also obtain increasing of homogeneity
of dopant in doped area. In this paper we consider manufacturing a field-effect heterotransistor without pn-
junction. Optimization of technological process with using inhomogeneity of heterostructure give us
possibility to manufacture the transistors as more compact.
ON OPTIMIZATION OF MANUFACTURING OF AN AMPLIFIER TO INCREASE DENSITY OF BIPOL...ijoejournal
In this paper we consider a possibility to increase density of bipolar heterotransistor framework an amplifier
due to decreasing of their dimensions. The considered approach based on doping of required areas of
heterostructure with specific configuration by diffusion or ion implantation. The doping finished by optimized
annealing of dopant and/or radiation defects. Analysis of redistribution of dopant with account redistribution
of radiation defects (after implantation of ions of dopant) for optimization of the above annealing
have been done by using recently introduced analytical approach. The approach gives a possibility
to analyze mass and heat transports in a heterostructure without crosslinking of solutions on interfaces
between layers of the heterostructure with account nonlinearity of these transports and variation in time of
their parameters.
On optimization ofON OPTIMIZATION OF DOPING OF A HETEROSTRUCTURE DURING MANUF...ijcsitcejournal
We introduce an approach of manufacturing of a p-i-n-heterodiodes. The approach based on using a δ-
doped heterostructure, doping by diffusion or ion implantation of several areas of the heterostructure. After
the doping the dopant and/or radiation defects have been annealed. We introduce an approach to optimize
annealing of the dopant and/or radiation defects. We determine several conditions to manufacture more
compact p-i-n-heterodiodes
ON INCREASING OF DENSITY OF ELEMENTS IN A MULTIVIBRATOR ON BIPOLAR TRANSISTORSijcsitcejournal
In this paper we consider an approach to increase density of elements of a multivibrator on bipolar transistors.
The considered approach based on manufacturing a heterostructure with necessity configuration,
doping by diffusion or ion implantation of required areas to manufacture the required type of conductivity
(p or n) in the areas and optimization of annealing of dopant and/or radiation defects to manufacture more
compact distributions of concentrations of dopants. We also introduce an analytical approach to prognosis
technological process.
MODIFICATION OF DOPANT CONCENTRATION PROFILE IN A FIELD-EFFECT HETEROTRANSIST...msejjournal
In this paper we consider an approach of manufacturing more compact field-effect heterotransistors. The
approach based on manufacturing a heterostructure, which consist of a substrate and an epitaxial layer
with specific configuration. After that several areas of the epitaxial layer have been doped by diffusion or
ion implantation with optimized annealing of dopant and /or radiation defects. At the same time we introduce
an approach of modification of energy band diagram by additional doping of channel of the transistors.
We also consider an analytical approach to model and optimize technological process.
An approach to decrease dimentions of logicalijcsa
In this paper we consider manufacturing logical elements with function AND-NOT based on bipolar transistors.Based on recently considered approach to decrease dimensions of solid state electronic devices with the same time increasing of their performance we introduce an approach to decrease dimensions of transistors and p-n-junctions, which became a part of the logical element. Framework the approach a heterostructure
with required configuration should be manufactured. After the manufacture required areas of the heterostructures should be doped by diffusion or ion implantation. The doping should be finished by optimized annealing of dopant and/or radiation defects.
On prognozisys of manufacturing doublebaseijaceeejournal
In this paper we introduce a modification of recently introduced analytical approach to model mass- and
heat transport. The approach gives us possibility to model the transport in multilayer structures with account
nonlinearity of the process and time-varing coefficients and without matching the solutions at the
interfaces of the multilayer structures. As an example of using of the approach we consider technological
process to manufacture more compact double base heterobipolar transistor. The technological approach
based on manufacturing a heterostructure with required configuration, doping of required areas of this
heterostructure by diffusion or ion implantation and optimal annealing of dopant and/or radiation defects.
The approach gives us possibility to manufacture p-n- junctions with higher sharpness framework the transistor.
In this situation we have a possibility to obtain smaller switching time of p-n- junctions and higher
compactness of the considered bipolar transistor.
ON OPTIMIZATION OF MANUFACTURING OF MULTICHANNEL HETEROTRANSISTORS TO INCREAS...ijrap
In this paper we consider an approach to increase integration rate of field-effect heterotransistors. Framework
the approach we consider a heterostructure with specific configuration. After manufacturing the
heterostructure we consider doping of required areas of the heterostructure by diffusion or ion implantation.
The doping finished by optimized annealing of dopant and/or radiation defects. Framework this paper
we consider a possibility to manufacture with several channels. Manufacturing multi-channel transistors
gives us a possibility the to increase integration rate of transistors and to increase electrical current
through the transistor.
ON OPTIMIZATION OF MANUFACTURING OF FIELD EFFECT HETEROTRANSISTORS FRAMEWORK ...antjjournal
We consider an approach for increasing density of field-effect heterotransistors in a single-stage multi-path
operational amplifier. At the same time one can obtain decreasing of dimensions of the above transistors.
Dimensions of the elements could be decreased by manufacturing of these elements in a heterostructure
with specific structure. The manufacturing is doing by doping of required areas of the heterostructure by
diffusion or ion implantation with future optimization of annealing of dopant and/or radiation defects.
AN APPROACH TO OPTIMIZE OF MANUFACTURING OF A VOLTAGE REFERENCE BASED ON HETE...JaresJournal
In this paper we introduce an approach to increase density of field-effect transistors framework a voltage
reference. Framework the approach we consider manufacturing the inverter in heterostructure with specific configuration. Several required areas of the heterostructure should be doped by diffusion or ion implantation. After that dopant and radiation defects should by annealed framework optimized scheme. We also
consider an approach to decrease value of mismatch-induced stress in the considered heterostructure. We
introduce an analytical approach to analyze mass and heat transport in heterostructures during manufacturing of integrated circuits with account mismatch-induced stress.
Modelling of a Multi Motors Traction System Connected in Series Using a Matri...ijaceeejournal
The first generation of multi-machine systems is limited on two .the first configuration consists of a
continuous floor which feeds several three-phase inverters connected in parallel, or each inverter supplies a
three-phase machine .the control of each machine is independent via its inverter and its algorithm control
.the second configuration consists of a single inverter, which also feeds in parallel three phase machines .for
this structure, the machines must have the same speed and suffer the same torque load .these two conditions
make the use of this system in a limited scope .It is impossible to connect in series several three-phase
machines powered by a single-phase power converter and that each machine in the group have an
independent speed control .but, the use of multi-phase converters associated with polyphase machine .
generate additional degrees of freedom .With these, several polyphase machines can be connected in series
in an appropriate transposition phases.
The objective of this work is to order, model and characterize the behavior of a training system
multimachines composed of two five phase synchronous permanent magnet motors connected in series and
powered by a five phase matrix converter applied to the rail traction.
This paper presents the design of folded cascode operational transconductance amplifier (OTA). This
design has been implemented in 0.18um CMOS Technology using Cadence. Spectre simulation shows
that the OTA has flat gain of 47dB from 1Hz to 100 KHz frequency, indicating stability of OTA, noise
ranges as 22.49769nV/ at 10Hz to 66.89128fV/ at 1MHz and average power as 0.770mW. In
this paper, we will be studying the design concepts, analysis of operational transconductance amplifier
which is used for recording the bio signals. This paper plays a key role in real time applications for
equipment designing of ECG, EEG, EMG, ENG devices. It is also used in recording and also for
treatment of Paralysis, Epilepsy, Neuro diseases etc.,
COOPERATIVE COMMUNICATIONS COMBINATION DIVERSITY TECHNIQUES AND OPTIMAL POWER...ijaceeejournal
The main task of this article is to focus on the performance of cooperative MIMO relaying in terms of data rate and Power. Furthermore, compare these performances when using Maximum Ratio Combining (MRC) and equal gain combining (EGC).The average SNR improvement of MRC is typically about 5 dB better than with EGC and direct link.The preciseness of the derived closed form expression of optimum power allocation of the DF-based relaying system is demonstrated by simulation results.
ON OPTIMIZATION OF MANUFACTURING PLANAR DOUBLE-BASE HETEROTRANSISTORS TO DECR...ijaceeejournal
In this paper we consider an approach of manufacturing of double-base hetero transistors to decrease their
dimensions. Framework the approach it should be manufactured a heterostructure with specific configuration.
Farther it is necessary to dope certain areas of the hetero structure by diffusion or by ion implantation.
After finishing of the doping process the dopant and/or radiation defects should be annealed. We consider
an approach of optimization of dopant and/or radiation defects for manufacturing more compact double base
heterotransistors.
A horn may be considered as a flared out waveguide. In this paper, a powerful electromagnetic simulator, 3D
EM solver WIPL-D software is used to design, analyse and optimize the dimensions of horn antenna which is
based on MOM solution for computations. The standard horn antenna at 10 GHz for 15dB gain is modelled and
the radiation pattern was observed. The horn antenna is optimized to achieve more than 20dB gain using
Genetic Algorithm, radiation patterns of the optimized horn antenna are also presented. Geometry of the horn
can be modelled by exploring the toolbar ‘symmetry’ option in WIPL-D. Design of X band Pyramidal Horn
Antenna is fabricated and measured using Network Analyzer.
ON APPROACH TO INCREASE INTEGRATION RATE OF FIELD-EFFECT HETEROTRANSISTORS IN...IJMEJournal1
In this paper we introduce an approach to increase integration rate of field-effect heterotransistors in
the framework of a bootstrap switch. In the framework of the approach we consider a heterostructure
with special configuration. Several specific areas of the heterostructure should be doped by diffusion
or ion implantation. Annealing of dopant and/or radiation defects should be optimized.
ON APPROACH TO INCREASE INTEGRATION RATE OF FIELD-EFFECT HETEROTRANSISTORS IN...ijmejournal
In this paper we introduce an approach to increase integration rate of field-effect heterotransistors in
the framework of a bootstrap switch. In the framework of the approach we consider a heterostructure
with special configuration. Several specific areas of the heterostructure should be doped by diffusion
or ion implantation. Annealing of dopant and/or radiation defects should be optimized.
ON OPTIMIZATION OF MANUFACTURING OF FIELD-EFFECT HETEROTRANSISTORS FRAMEWORK ...ijoejournal
In this paper we introduce an approach to increase density of field-effect transistors framework a voltage reference. Framework the approach we consider manufacturing the inverter in heterostructure with specific configuration. Several required areas of the heterostructure should be doped by diffusion or ion implantation. After that dopant and radiation defects should by annealed framework optimized scheme. We also consider an approach to decrease value of mismatch-induced stress in the considered heterostructure. We introduce an analytical approach to analyze mass and heat transport in heterostructures during manufacturing of integrated circuits with account mismatch-induced stress.
ON APPROACH OF OPTIMIZATION OF FORMATION OF INHOMOGENOUS DISTRIBUTIONS OF DOP...ijcsa
We introduce an approach of manufacturing of a field-effect heterotransistor with inhomogenous doping of channel. The inhomogenous distribution of concentration of dopant gives a possibility to change speed of transport of charge carriers and to decrease length of channel.
OPTIMIZATION OF MANUFACTURE OF FIELDEFFECT HETEROTRANSISTORS WITHOUT P-NJUNCT...ijrap
It has been recently shown, that manufacturing p-n-junctions, field-effect and bipolar transistors, thyristors
in a multilayer structure by diffusion or ion implantation under condition of optimization of dopant and/or
radiation defects leads to increasing of sharpness of p-n-junctions (both single p-n-junctions and p-njunctions,
which include into their system). In this situation one can also obtain increasing of homogeneity
of dopant in doped area. In this paper we consider manufacturing a field-effect heterotransistor without pn-
junction. Optimization of technological process with using inhomogeneity of heterostructure give us
possibility to manufacture the transistors as more compact.
ON OPTIMIZATION OF MANUFACTURING OF AN AMPLIFIER TO INCREASE DENSITY OF BIPOL...ijoejournal
In this paper we consider a possibility to increase density of bipolar heterotransistor framework an amplifier
due to decreasing of their dimensions. The considered approach based on doping of required areas of
heterostructure with specific configuration by diffusion or ion implantation. The doping finished by optimized
annealing of dopant and/or radiation defects. Analysis of redistribution of dopant with account redistribution
of radiation defects (after implantation of ions of dopant) for optimization of the above annealing
have been done by using recently introduced analytical approach. The approach gives a possibility
to analyze mass and heat transports in a heterostructure without crosslinking of solutions on interfaces
between layers of the heterostructure with account nonlinearity of these transports and variation in time of
their parameters.
On optimization ofON OPTIMIZATION OF DOPING OF A HETEROSTRUCTURE DURING MANUF...ijcsitcejournal
We introduce an approach of manufacturing of a p-i-n-heterodiodes. The approach based on using a δ-
doped heterostructure, doping by diffusion or ion implantation of several areas of the heterostructure. After
the doping the dopant and/or radiation defects have been annealed. We introduce an approach to optimize
annealing of the dopant and/or radiation defects. We determine several conditions to manufacture more
compact p-i-n-heterodiodes
ON INCREASING OF DENSITY OF ELEMENTS IN A MULTIVIBRATOR ON BIPOLAR TRANSISTORSijcsitcejournal
In this paper we consider an approach to increase density of elements of a multivibrator on bipolar transistors.
The considered approach based on manufacturing a heterostructure with necessity configuration,
doping by diffusion or ion implantation of required areas to manufacture the required type of conductivity
(p or n) in the areas and optimization of annealing of dopant and/or radiation defects to manufacture more
compact distributions of concentrations of dopants. We also introduce an analytical approach to prognosis
technological process.
MODIFICATION OF DOPANT CONCENTRATION PROFILE IN A FIELD-EFFECT HETEROTRANSIST...msejjournal
In this paper we consider an approach of manufacturing more compact field-effect heterotransistors. The
approach based on manufacturing a heterostructure, which consist of a substrate and an epitaxial layer
with specific configuration. After that several areas of the epitaxial layer have been doped by diffusion or
ion implantation with optimized annealing of dopant and /or radiation defects. At the same time we introduce
an approach of modification of energy band diagram by additional doping of channel of the transistors.
We also consider an analytical approach to model and optimize technological process.
An approach to decrease dimentions of logicalijcsa
In this paper we consider manufacturing logical elements with function AND-NOT based on bipolar transistors.Based on recently considered approach to decrease dimensions of solid state electronic devices with the same time increasing of their performance we introduce an approach to decrease dimensions of transistors and p-n-junctions, which became a part of the logical element. Framework the approach a heterostructure
with required configuration should be manufactured. After the manufacture required areas of the heterostructures should be doped by diffusion or ion implantation. The doping should be finished by optimized annealing of dopant and/or radiation defects.
On prognozisys of manufacturing doublebaseijaceeejournal
In this paper we introduce a modification of recently introduced analytical approach to model mass- and
heat transport. The approach gives us possibility to model the transport in multilayer structures with account
nonlinearity of the process and time-varing coefficients and without matching the solutions at the
interfaces of the multilayer structures. As an example of using of the approach we consider technological
process to manufacture more compact double base heterobipolar transistor. The technological approach
based on manufacturing a heterostructure with required configuration, doping of required areas of this
heterostructure by diffusion or ion implantation and optimal annealing of dopant and/or radiation defects.
The approach gives us possibility to manufacture p-n- junctions with higher sharpness framework the transistor.
In this situation we have a possibility to obtain smaller switching time of p-n- junctions and higher
compactness of the considered bipolar transistor.
ON OPTIMIZATION OF MANUFACTURING OF MULTICHANNEL HETEROTRANSISTORS TO INCREAS...ijrap
In this paper we consider an approach to increase integration rate of field-effect heterotransistors. Framework
the approach we consider a heterostructure with specific configuration. After manufacturing the
heterostructure we consider doping of required areas of the heterostructure by diffusion or ion implantation.
The doping finished by optimized annealing of dopant and/or radiation defects. Framework this paper
we consider a possibility to manufacture with several channels. Manufacturing multi-channel transistors
gives us a possibility the to increase integration rate of transistors and to increase electrical current
through the transistor.
ON OPTIMIZATION OF MANUFACTURING OF FIELD EFFECT HETEROTRANSISTORS FRAMEWORK ...antjjournal
We consider an approach for increasing density of field-effect heterotransistors in a single-stage multi-path
operational amplifier. At the same time one can obtain decreasing of dimensions of the above transistors.
Dimensions of the elements could be decreased by manufacturing of these elements in a heterostructure
with specific structure. The manufacturing is doing by doping of required areas of the heterostructure by
diffusion or ion implantation with future optimization of annealing of dopant and/or radiation defects.
AN APPROACH TO OPTIMIZE OF MANUFACTURING OF A VOLTAGE REFERENCE BASED ON HETE...JaresJournal
In this paper we introduce an approach to increase density of field-effect transistors framework a voltage
reference. Framework the approach we consider manufacturing the inverter in heterostructure with specific configuration. Several required areas of the heterostructure should be doped by diffusion or ion implantation. After that dopant and radiation defects should by annealed framework optimized scheme. We also
consider an approach to decrease value of mismatch-induced stress in the considered heterostructure. We
introduce an analytical approach to analyze mass and heat transport in heterostructures during manufacturing of integrated circuits with account mismatch-induced stress.
Modelling of a Multi Motors Traction System Connected in Series Using a Matri...ijaceeejournal
The first generation of multi-machine systems is limited on two .the first configuration consists of a
continuous floor which feeds several three-phase inverters connected in parallel, or each inverter supplies a
three-phase machine .the control of each machine is independent via its inverter and its algorithm control
.the second configuration consists of a single inverter, which also feeds in parallel three phase machines .for
this structure, the machines must have the same speed and suffer the same torque load .these two conditions
make the use of this system in a limited scope .It is impossible to connect in series several three-phase
machines powered by a single-phase power converter and that each machine in the group have an
independent speed control .but, the use of multi-phase converters associated with polyphase machine .
generate additional degrees of freedom .With these, several polyphase machines can be connected in series
in an appropriate transposition phases.
The objective of this work is to order, model and characterize the behavior of a training system
multimachines composed of two five phase synchronous permanent magnet motors connected in series and
powered by a five phase matrix converter applied to the rail traction.
This paper presents the design of folded cascode operational transconductance amplifier (OTA). This
design has been implemented in 0.18um CMOS Technology using Cadence. Spectre simulation shows
that the OTA has flat gain of 47dB from 1Hz to 100 KHz frequency, indicating stability of OTA, noise
ranges as 22.49769nV/ at 10Hz to 66.89128fV/ at 1MHz and average power as 0.770mW. In
this paper, we will be studying the design concepts, analysis of operational transconductance amplifier
which is used for recording the bio signals. This paper plays a key role in real time applications for
equipment designing of ECG, EEG, EMG, ENG devices. It is also used in recording and also for
treatment of Paralysis, Epilepsy, Neuro diseases etc.,
COOPERATIVE COMMUNICATIONS COMBINATION DIVERSITY TECHNIQUES AND OPTIMAL POWER...ijaceeejournal
The main task of this article is to focus on the performance of cooperative MIMO relaying in terms of data rate and Power. Furthermore, compare these performances when using Maximum Ratio Combining (MRC) and equal gain combining (EGC).The average SNR improvement of MRC is typically about 5 dB better than with EGC and direct link.The preciseness of the derived closed form expression of optimum power allocation of the DF-based relaying system is demonstrated by simulation results.
ON OPTIMIZATION OF MANUFACTURING PLANAR DOUBLE-BASE HETEROTRANSISTORS TO DECR...ijaceeejournal
In this paper we consider an approach of manufacturing of double-base hetero transistors to decrease their
dimensions. Framework the approach it should be manufactured a heterostructure with specific configuration.
Farther it is necessary to dope certain areas of the hetero structure by diffusion or by ion implantation.
After finishing of the doping process the dopant and/or radiation defects should be annealed. We consider
an approach of optimization of dopant and/or radiation defects for manufacturing more compact double base
heterotransistors.
A horn may be considered as a flared out waveguide. In this paper, a powerful electromagnetic simulator, 3D
EM solver WIPL-D software is used to design, analyse and optimize the dimensions of horn antenna which is
based on MOM solution for computations. The standard horn antenna at 10 GHz for 15dB gain is modelled and
the radiation pattern was observed. The horn antenna is optimized to achieve more than 20dB gain using
Genetic Algorithm, radiation patterns of the optimized horn antenna are also presented. Geometry of the horn
can be modelled by exploring the toolbar ‘symmetry’ option in WIPL-D. Design of X band Pyramidal Horn
Antenna is fabricated and measured using Network Analyzer.
ON APPROACH TO INCREASE INTEGRATION RATE OF FIELD-EFFECT HETEROTRANSISTORS IN...IJMEJournal1
In this paper we introduce an approach to increase integration rate of field-effect heterotransistors in
the framework of a bootstrap switch. In the framework of the approach we consider a heterostructure
with special configuration. Several specific areas of the heterostructure should be doped by diffusion
or ion implantation. Annealing of dopant and/or radiation defects should be optimized.
ON APPROACH TO INCREASE INTEGRATION RATE OF FIELD-EFFECT HETEROTRANSISTORS IN...ijmejournal
In this paper we introduce an approach to increase integration rate of field-effect heterotransistors in
the framework of a bootstrap switch. In the framework of the approach we consider a heterostructure
with special configuration. Several specific areas of the heterostructure should be doped by diffusion
or ion implantation. Annealing of dopant and/or radiation defects should be optimized.
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with special configuration. Several specific areas of the heterostructure should be doped by diffusion
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It has been recently shown, that manufacturing p-n-junctions, field-effect and bipolar transistors, thyristors in a multilayer structure by diffusion or ion implantation under condition of optimization of dopant and/or
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It has been recently shown, that manufacturing p-n-junctions, field-effect and bipolar transistors, thyristors in a multilayer structure by diffusion or ion implantation under condition of optimization of dopant and/or radiation defects leads to increasing of sharpness of p-n-junctions (both single p-n-junctions and p-njunctions, which include into their system). In this situation one can also obtain increasing of homogeneity of dopant in doped area. In this paper we consider manufacturing a field-effect heterotransistor without pn-junction. Optimization of technological process with using inhomogeneity of heterostructure give us possibility to manufacture the transistors as more compact.
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heterostructures with an overlayer and without the overlayer. Conditions for decreasing of depth of the
considered p-n-junction have been formulated.
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heterostructures with an overlayer and without the overlayer. Conditions for decreasing of depth of the
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approach based on manufacturing a heterostructure, which consist of a substrate and an epitaxial layer
with specific configuration. After that several areas of the epitaxial layer have been doped by diffusion or
ion implantation with optimized annealing of dopant and /or radiation defects. At the same time we introduce an approach of modification of energy band diagram by additional doping of channel of the transistors. We also consider an analytical approach to model and optimize technological process.
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In this paper we introduce an approach to increase integration rate of field-effect heterotransistors in the
framework of band-pass filter. In the framework of the approach we consider a heterostructure with special configuration. Several specific areas of the heterostructure should be doped by diffusion or ion implantation. Annealing of dopant and/or radiation defects should be optimized.
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and heat transport during technological processes. Using the approach leads to take into account nonlinearity of mass and heat transport and variation in space and time (at one time) physical parameters of these
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1. International Journal of Applied Control, Electrical and Electronics Engineering (IJACEEE) Vol 3, No.3, August 2015
DOI : 10.5121/ijaceee.2015.3301 1
ON VERTICAL INTEGRATION FRAMEWORK
ELEMENT OF TRANSISTOR-TRANSISTOR LOGIC
E.L. Pankratov1
, E.A. Bulaeva1,2
1
Nizhny Novgorod State University, 23 Gagarin avenue, Nizhny Novgorod, 603950,
Russia
2
Nizhny Novgorod State University of Architecture and Civil Engineering, 65 Il'insky
street, Nizhny Novgorod, 603950, Russia
ABSTRACT
In this paper we introduce an approach to increase vertical integration of elements of transistor-transistor
logic with function AND-NOT. Framework the approach we consider a heterostructure with special confi-
guration. Several specific areas of the heterostructure should be doped by diffusion or ion implantation.
Annealing of dopant and/or radiation defects should be optimized.
KEYWORDS
Transistor-transistor logic; optimization of manufacturing; decreasing of dimensions of transistor; analyti-
cal approach for modelling
1. INTRODUCTION
An actual and intensively solving problems of solid state electronics is increasing of integration
rate of elements of integrated circuits (p-n-junctions, their systems et al) [1-8]. Increasing of the
integration rate leads to necessity to decrease their dimensions. To decrease the dimensions are
using several approaches. They are widely using laser and microwave types of annealing of in-
fused dopants. These types of annealing are also widely using for annealing of radiation defects,
generated during ion implantation [9-17]. Using the approaches gives a possibility to increase
integration rate of elements of integrated circuits through inhomogeneity of technological para-
meters due to generating inhomogenous distribution of temperature. In this situation one can ob-
tain decreasing dimensions of elements of integrated circuits [18] with account Arrhenius law
[1,3]. Another approach to manufacture elements of integrated circuits with smaller dimensions is
doping of heterostructure by diffusion or ion implantation [1-3]. However in this case optimiza-
tion of dopant and/or radiation defects is required [18].
In this paper we consider a heterostructure presented in Figs. 1. The heterostructure consist of a
substrate and several epitaxial layers (see Figs. 1). Some sections have been manufactured in the
epitaxial layers so as it is shown on Figs. 1. Further we consider doping of these sections by dif-
fusion or ion implantation. The doping gives a possibility to manufacture transistors and p-n-
junction so as it is shown on Figs. 1. The manufacturing gives a possibility to prepare element of
transistor-transistor logic on Fig. 1a. After the considered doping dopant and/or radiation defects
should be annealed. Framework the paper we analyzed dynamics of redistribution of dopant
and/or radiation defects during their annealing. Similar logical element has been considered in
[19]. We introduce an approach to decrease dimensions of the element. However it is necessary to
complicate technological process.
2. International Journal of Applied Control, Electrical and Electronics Engineering (IJACEEE) Vol 3, No.3, August 2015
2
Fig. 1a. Composition element transistor-transistor logic. View from above. Black marked transistors and p-
n-junction manufactured by using doping of appropriate sections of the epitaxial layer. Dimensions of these
devices are decreased. Transistor 1 is a multiemitter transistor. Emitters have been marked by using letter E.
The index indicates their number in the multiemitter transistor. D1 and D2 mean dopants of p and n types in
p-n-junction. Red marked resistors (Ri) and wires have no decreasing of their dimensions
Fig. 1b. Heterostructure, which consist of a substrate and epitaxial layer with sections, manufactured by
using another materials. The figure shows integration of a multiemitter and homoemitter transistors. Dashed
lines are illustrated wires
3. International Journal of Applied Control, Electrical and Electronics Engineering (IJACEEE) Vol 3, No.3, August 2015
3
Substrate
Base
Collector
Emitter
Base
Collector
Emitter
Fig. 1c. Heterostructure, which consist of a substrate and epitaxial layer with sections, manufactured by
using another materials. The figure shows integration of two homoemitter transistors. Dashed lines are illu-
strated wires
2. METHOD OF SOLUTION
In this section we determine spatio-temporal distributions of concentrations of infused and im-
planted dopants. To determine these distributions we calculate appropriate solutions of the second
Fick's law [1,3,18]
( ) ( ) ( ) ( )
+
+
=
z
tzyxC
D
zy
tzyxC
D
yx
tzyxC
D
xt
tzyxC
CCC
∂
∂
∂
∂
∂
∂
∂
∂
∂
∂
∂
∂
∂
∂ ,,,,,,,,,,,,
. (1)
Boundary and initial conditions for the equations are
( ) 0
,,,
0
=
∂
∂
=x
x
tzyxC
,
( ) 0
,,,
=
∂
∂
= xLx
x
tzyxC
,
( ) 0
,,,
0
=
∂
∂
=y
y
tzyxC
,
( ) 0
,,,
=
∂
∂
= yLx
y
tzyxC
,
( ) 0
,,,
0
=
∂
∂
=z
z
tzyxC
,
( ) 0
,,,
=
∂
∂
= zLx
z
tzyxC
, C (x,y,z,0)=f (x,y,z). (2)
The function C(x,y,z,t) describes the spatio-temporal distribution of concentration of dopant; T is
the temperature of annealing; DС is the dopant diffusion coefficient. Value of dopant diffusion
coefficient could be changed with changing materials of heterostructure, with changing tempera-
ture of materials (including annealing), with changing concentrations of dopant and radiation de-
fects. We approximate dependences of dopant diffusion coefficient on parameters by the follow-
ing relation with account results in Refs. [20-22]
( ) ( )
( )
( ) ( )
( )
++
+= 2*
2
2*1
,,,,,,
1
,,,
,,,
1,,,
V
tzyxV
V
tzyxV
TzyxP
tzyxC
TzyxDD LC ςςξ γ
γ
. (3)
Here the function DL (x,y,z,T) describes the spatial (in heterostructure) and temperature (due to
Arrhenius law) dependences of diffusion coefficient of dopant. The function P (x,y,z,T) describes
the limit of solubility of dopant. Parameter γ ∈[1,3] describes average quantity of charged defects
interacted with atom of dopant [20]. The function V (x,y,z,t) describes the spatio-temporal distri-
bution of concentration of radiation vacancies. Parameter V*
describes the equilibrium distribution
of concentration of vacancies. The considered concentrational dependence of dopant diffusion
coefficient has been described in details in [20]. It should be noted, that using diffusion type of
doping did not generation radiation defects. In this situation ζ1= ζ2= 0. We determine spatio-
temporal distributions of concentrations of radiation defects by solving the following system of
equations [21,22]
4. International Journal of Applied Control, Electrical and Electronics Engineering (IJACEEE) Vol 3, No.3, August 2015
4
( ) ( ) ( ) ( ) ( ) ( ) ×−
∂
∂
∂
∂
+
∂
∂
∂
∂
=
∂
∂
Tzyxk
y
tzyxI
TzyxD
yx
tzyxI
TzyxD
xt
tzyxI
IIII ,,,
,,,
,,,
,,,
,,,
,,,
,
( ) ( ) ( ) ( ) ( ) ( )tzyxVtzyxITzyxk
z
tzyxI
TzyxD
z
tzyxI VII ,,,,,,,,,
,,,
,,,,,, ,
2
−
∂
∂
∂
∂
+× (4)
( ) ( ) ( ) ( ) ( ) ( ) ×−
∂
∂
∂
∂
+
∂
∂
∂
∂
=
∂
∂
Tzyxk
y
tzyxV
TzyxD
yx
tzyxV
TzyxD
xt
tzyxV
VVVV ,,,
,,,
,,,
,,,
,,,
,,,
,
( ) ( ) ( ) ( ) ( ) ( )tzyxVtzyxITzyxk
z
tzyxV
TzyxD
z
tzyxV VIV ,,,,,,,,,
,,,
,,,,,, ,
2
−
∂
∂
∂
∂
+× .
Boundary and initial conditions for these equations are
( ) 0
,,,
0
=
∂
∂
=x
x
tzyxρ
,
( ) 0
,,,
=
∂
∂
= xLx
x
tzyxρ
,
( ) 0
,,,
0
=
∂
∂
=y
y
tzyxρ
,
( ) 0
,,,
=
∂
∂
= yLy
y
tzyxρ
,
( ) 0
,,,
0
=
∂
∂
=z
z
tzyxρ
,
( ) 0
,,,
=
∂
∂
= zLz
z
tzyxρ
, ρ (x,y,z,0)=fρ (x,y,z). (5)
Here ρ =I,V. The function I (x,y,z,t) describes the spatio-temporal distribution of concentration of
radiation interstitials; Dρ(x,y,z,T) are the diffusion coefficients of point radiation defects; terms
V2
(x,y,z,t) and I2
(x,y,z,t) correspond to generation divacancies and diinterstitials; kI,V(x,y,z,T) is the
parameter of recombination of point radiation defects; kI,I(x,y,z,T) and kV,V(x,y,z,T) are the parame-
ters of generation of simplest complexes of point radiation defects.
Further we determine distributions in space and time of concentrations of divacancies ΦV(x,y,z,t)
and diinterstitials ΦI(x,y,z,t) by solving the following system of equations [21,22]
( ) ( ) ( ) ( ) ( ) +
Φ
+
Φ
=
Φ
ΦΦ
y
tzyx
TzyxD
yx
tzyx
TzyxD
xt
tzyx I
I
I
I
I
∂
∂
∂
∂
∂
∂
∂
∂
∂
∂ ,,,
,,,
,,,
,,,
,,,
( ) ( ) ( ) ( ) ( ) ( )tzyxITzyxktzyxITzyxk
z
tzyx
TzyxD
z
III
I
I ,,,,,,,,,,,,
,,,
,,, 2
, −+
Φ
+ Φ
∂
∂
∂
∂
(6)
( ) ( ) ( ) ( ) ( ) +
Φ
+
Φ
=
Φ
ΦΦ
y
tzyx
TzyxD
yx
tzyx
TzyxD
xt
tzyx V
V
V
V
V
∂
∂
∂
∂
∂
∂
∂
∂
∂
∂ ,,,
,,,
,,,
,,,
,,,
( ) ( ) ( ) ( ) ( ) ( )tzyxVTzyxktzyxVTzyxk
z
tzyx
TzyxD
z
VVV
V
V ,,,,,,,,,,,,
,,,
,,, 2
, −+
Φ
+ Φ
∂
∂
∂
∂
.
Boundary and initial conditions for these equations are
( )
0
,,,
0
=
∂
Φ∂
=x
x
tzyxρ
,
( )
0
,,,
=
∂
Φ∂
= xLx
x
tzyxρ
,
( )
0
,,,
0
=
∂
Φ∂
=y
y
tzyxρ
,
( )
0
,,,
=
∂
Φ∂
= yLy
y
tzyxρ
,
( )
0
,,,
0
=
∂
Φ∂
=z
z
tzyxρ
,
( )
0
,,,
=
∂
Φ∂
= zLz
z
tzyxρ
, ΦI (x,y,z,0)=fΦI (x,y,z), ΦV (x,y,z,0)=fΦV (x,y,z). (7)
5. International Journal of Applied Control, Electrical and Electronics Engineering (IJACEEE) Vol 3, No.3, August 2015
5
Here DΦρ(x,y,z,T) are the diffusion coefficients of the above complexes of radiation defects;
kI(x,y,z,T) and kV (x,y,z,T) are the parameters of decay of these complexes.
We calculate distributions of concentrations of point radiation defects in space and time by re-
cently elaborated approach [18]. The approach based on transformation of approximations of dif-
fusion coefficients in the following form: Dρ(x,y,z,T)=D0ρ[1+ερ gρ(x,y,z,T)], where D0ρ are the av-
erage values of diffusion coefficients, 0≤ερ<1, |gρ(x,y,z,T)|≤1, ρ =I,V. We also used analogous
transformation of approximations of parameters of recombination of point defects and parameters
of generation of their complexes: kI,V(x,y,z,T)=k0I,V[1+εI,V gI,V(x,y,z,T)], kI,I(x,y,z,T)=k0I,I [1+εI,I
gI,I(x,y,z,T)] and kV,V (x,y,z,T) = k0V,V [1+εV,V gV,V(x,y,z,T)], where k0ρ1,ρ2 are the their average values,
0≤εI,V <1, 0≤εI,I <1, 0≤εV,V<1, | gI,V(x,y,z,T)|≤1, | gI,I(x,y,z,T)|≤1, |gV,V(x,y,z,T)|≤1. Let us introduce
the following dimensionless variables: ( ) ( ) *
,,,,,,
~
ItzyxItzyxI = , χ = x/Lx, η = y /Ly,
( ) ( ) *
,,,,,,
~
VtzyxVtzyxV = , 2
00 LtDD VI=ϑ , VIVI DDkL 00,0
2
=ω , VI DDkL 00,0
2
ρρρ =Ω , φ =
z/Lz. The introduction leads to transformation of Eqs.(4) and conditions (5) to the following form
( ) ( )[ ] ( ) ( )[ ]{ ×+
∂
∂
+
∂
∂
+
∂
∂
=
∂
∂
Tg
I
Tg
DD
DI
IIII
VI
I
,,,1
,,,
~
,,,1
,,,
~
00
0
φηχε
ηχ
ϑφηχ
φηχε
χϑ
ϑφηχ
( ) ( )[ ] ( ) ( ) ×−
∂
∂
+
∂
∂
+
∂
∂
× ϑφηχ
φ
ϑφηχ
φηχε
φη
ϑφηχ
,,,
~,,,
~
,,,1
,,,
~
00
0
00
0
I
I
Tg
DD
D
DD
DI
II
VI
I
VI
I
( )[ ] ( ) ( )[ ] ( )ϑφηχφηχεϑφηχφηχεω ,,,
~
,,,1,,,
~
,,,1 2
,,,, ITgVTg IIIIIVIVI +Ω−+× (8)
( ) ( )[ ] ( ) ( )[ ]{ ×+
∂
∂
+
∂
∂
+
∂
∂
=
∂
∂
Tg
V
Tg
DD
DV
VVVV
VI
V
,,,1
,,,
~
,,,1
,,,
~
00
0
φηχε
ηχ
ϑφηχ
φηχε
χϑ
ϑφηχ
( ) ( )[ ] ( ) ( ) ×−
∂
∂
+
∂
∂
+
∂
∂
× ϑφηχ
φ
ϑφηχ
φηχε
φη
ϑφηχ
,,,
~,,,
~
,,,1
,,,
~
00
0
00
0
I
V
Tg
DD
D
DD
DV
VV
VI
V
VI
V
( )[ ] ( ) ( )[ ] ( )ϑφηχφηχεϑφηχφηχεω ,,,
~
,,,1,,,
~
,,,1 2
,,,, VTgVTg VVVVVVIVI +Ω−+×
( ) 0
,,,~
0
=
∂
∂
=χ
χ
ϑφηχρ
,
( ) 0
,,,~
1
=
∂
∂
=χ
χ
ϑφηχρ
,
( ) 0
,,,~
0
=
∂
∂
=η
η
ϑφηχρ
,
( ) 0
,,,~
1
=
∂
∂
=η
η
ϑφηχρ
,
( ) 0
,,,~
0
=
∂
∂
=φ
φ
ϑφηχρ
,
( ) 0
,,,~
1
=
∂
∂
=φ
φ
ϑφηχρ
, ( )
( )
*
,,,
,,,~
ρ
ϑφηχ
ϑφηχρ ρf
= . (9)
We determine solutions of Eqs.(8) with conditions (9) framework recently introduced approach
[18], i.e. as the power series
( ) ( )∑ ∑ ∑Ω=
∞
=
∞
=
∞
=0 0 0
,,,~,,,~
i j k
ijk
kji
ϑφηχρωεϑφηχρ ρρ . (10)
Substitution of the series (10) into Eqs.(8) and conditions (9) gives us possibility to obtain equa-
tions for initial-order approximations of concentration of point defects ( )ϑφηχ ,,,
~
000I and
( )ϑφηχ ,,,
~
000V and corrections for them ( )ϑφηχ ,,,
~
ijkI and ( )ϑφηχ ,,,
~
ijkV , i ≥1, j ≥1, k ≥1. The equa-
tions are presented in the Appendix. Solutions of the equations could be obtained by standard
Fourier approach [24,25]. The solutions are presented in the Appendix.
6. International Journal of Applied Control, Electrical and Electronics Engineering (IJACEEE) Vol 3, No.3, August 2015
6
Now we calculate distributions of concentrations of simplest complexes of point radiation defects
in space and time. To determine the distributions we transform approximations of diffusion coef-
ficients in the following form: DΦρ(x,y,z,T)=D0Φρ[1+εΦρgΦρ(x,y,z,T)], where D0Φρ are the average
values of diffusion coefficients. In this situation the Eqs.(6) could be written as
( ) ( )[ ] ( ) ( ) ( )++
Φ
+=
Φ
ΦΦΦ tzyxITzyxk
x
tzyx
Tzyxg
x
D
t
tzyx
II
I
III
I
,,,,,,
,,,
,,,1
,,, 2
,0
∂
∂
ε
∂
∂
∂
∂
( )[ ] ( )
( )[ ] ( )
−
Φ
++
Φ
++ ΦΦΦΦΦΦ
z
tzyx
Tzyxg
z
D
y
tzyx
Tzyxg
y
D I
III
I
III
∂
∂
ε
∂
∂
∂
∂
ε
∂
∂ ,,,
,,,1
,,,
,,,1 00
( ) ( )tzyxITzyxkI ,,,,,,−
( )
( )[ ] ( )
( ) ( )++
Φ
+=
Φ
ΦΦΦ tzyxITzyxk
x
tzyx
Tzyxg
x
D
t
tzyx
II
V
VVV
V
,,,,,,
,,,
,,,1
,,, 2
,0
∂
∂
ε
∂
∂
∂
∂
( )[ ] ( ) ( )[ ] ( ) −
Φ
++
Φ
++ ΦΦΦΦΦΦ
z
tzyx
Tzyxg
z
D
y
tzyx
Tzyxg
y
D V
VVV
V
VVV
∂
∂
ε
∂
∂
∂
∂
ε
∂
∂ ,,,
,,,1
,,,
,,,1 00
( ) ( )tzyxITzyxkI ,,,,,,− .
Farther we determine solutions of above equations as the following power series
( ) ( )∑ Φ=Φ
∞
=
Φ
0
,,,,,,
i
i
i
tzyxtzyx ρρρ ε . (11)
Now we used the series (11) into Eqs.(6) and appropriate boundary and initial conditions. The
using gives the possibility to obtain equations for initial-order approximations of concentrations
of complexes of defects Φρ0(x,y,z,t), corrections for them Φρi(x,y,z,t) (for them i ≥1) and boundary
and initial conditions for them. We remove equations and conditions to the Appendix. Solutions
of the equations have been calculated by standard approaches [24,25] and presented in the Ap-
pendix.
Now we calculate distribution of concentration of dopant in space and time by using the ap-
proach, which was used for analysis of radiation defects. To use the approach we consider follow-
ing transformation of approximation of dopant diffusion coefficient: DL(x,y,z,T)=D0L[1+
εLgL(x,y,z,T)], where D0L is the average value of dopant diffusion coefficient, 0≤εL< 1,
|gL(x,y,z,T)|≤1. Farther we consider solution of Eq.(1) as the following series:
( ) ( )∑ ∑=
∞
=
∞
=0 1
,,,,,,
i j
ij
ji
L tzyxCtzyxC ξε .
Using the relation into Eq.(1) and conditions (2) leads to obtaining equations for the functions
Cij(x,y,z,t) (i ≥1, j ≥1), boundary and initial conditions for them. The equations are presented in
the Appendix. Solutions of the equations have been calculated by standard approaches (see, for
example, [24,25]). The solutions are presented in the Appendix.
We analyzed distributions of concentrations of dopant and radiation defects in space and time
analytically by using the second-order approximations on all parameters, which have been used in
appropriate series. Usually the second-order approximations are enough good approximations to
make qualitative analysis and to obtain quantitative results. All analytical results have been
checked by numerical simulation.
7. International Journal of Applied Control, Electrical and Electronics Engineering (IJACEEE) Vol 3, No.3, August 2015
7
3. DISCUSSION
In this section we analyzed spatio-temporal distributions of concentrations of dopants. Figs. 2
shows typical spatial distributions of concentrations of dopants in neighborhood of interfaces of
heterostructures. We calculate these distributions of concentrations of dopants under the follow-
ing condition: value of dopant diffusion coefficient in doped area is larger, than value of dopant
diffusion coefficient in nearest areas. In this situation one can find increasing of sharpness of p-n-
junctions with increasing of homogeneity of distribution of concentration of dopant at one time.
These both effects could be obtained in both situations, when p-n-junctions are single and frame-
work their systems (transistors, thyristors). Changing relation between values of dopant diffusion
coefficients leads to opposite result (see Figs. 3).
Fig. 2a. Dependences of concentration of dopant, infused in heterostructure from Figs. 1, on coordinate in
direction, which is perpendicular to interface between epitaxial layer substrate. Difference between values
of dopant diffusion coefficient in layers of heterostructure increases with increasing of number of curves.
Value of dopant diffusion coefficient in the epitaxial layer is larger, than value of dopant diffusion coeffi-
cient in the substrate
x
0.0
0.5
1.0
1.5
2.0
C(x,Θ)
2
3
4
1
0 L/4 L/2 3L/4 L
Epitaxial layer Substrate
Fig. 2b. Dependences of concentration of dopant, implanted in heterostructure from Figs. 1, on coordinate
in direction, which is perpendicular to interface between epitaxial layer substrate. Difference between val-
ues of dopant diffusion coefficient in layers of heterostructure increases with increasing of number of
curves. Value of dopant diffusion coefficient in the epitaxial layer is larger, than value of dopant diffusion
coefficient in the substrate. Curve 1 corresponds to homogenous sample and annealing time Θ=0.0048
(Lx
2
+Ly
2
+Lz
2
)/D0. Curve 2 corresponds to homogenous sample and annealing time Θ=0.0057 (Lx
2
+Ly
2
+
Lz
2
)/D0. Curves 3 and 4 correspond to heterostructure from Figs. 1; annealing times Θ=0.0048 (Lx
2
+Ly
2
+
Lz
2
)/D0 and Θ=0.0057 (Lx
2
+Ly
2
+ Lz
2
)/D0, respectively
8. International Journal of Applied Control, Electrical and Electronics Engineering (IJACEEE) Vol 3, No.3, August 2015
8
Fig.3a. Distributions of concentration of dopant, infused in average section of epitaxial layer of heterostruc-
ture from Figs. 1 in direction parallel to interface between epitaxial layer and substrate of heterostructure.
Difference between values of dopant diffusion coefficients increases with increasing of number of curves.
Value of dopant diffusion coefficient in this section is smaller, than value of dopant diffusion coefficient in
nearest sections
x
0.00000
0.00001
0.00010
0.00100
0.01000
0.10000
1.00000
C(x,Θ)
fC(x)
L/40 L/2 3L/4 Lx0
1
2
Substrate
Epitaxial
layer 1
Epitaxial
layer 2
Fig.3b. Calculated distributions of implanted dopant in epitaxial layers of heterostructure. Solid lines are
spatial distributions of implanted dopant in system of two epitaxial layers. Dushed lines are spatial distribu-
tions of implanted dopant in one epitaxial layer. Annealing time increases with increasing of number of
curves
It should be noted, that framework the considered approach one shall optimize annealing of do-
pant and/or radiation defects. To do the optimization we used recently introduced criterion [26-
34]. The optimization based on approximation real distribution by step-wise function ψ (x,y, z)
(see Figs. 4). Farther the required values of optimal annealing time have been calculated by mi-
nimization the following mean-squared error
( ) ( )[ ]∫ ∫ ∫ −Θ=
x y zL L L
zyx
xdydzdzyxzyxC
LLL
U
0 0 0
,,,,,
1
ψ . (12)
9. International Journal of Applied Control, Electrical and Electronics Engineering (IJACEEE) Vol 3, No.3, August 2015
9
C(x,Θ)
0 Lx
2
1
3
4
Fig.4a. Distributions of concentration of infused dopant in depth of heterostructure from Fig. 1 for different
values of annealing time (curves 2-4) and idealized step-wise approximation (curve 1). Increasing of num-
ber of curve corresponds to increasing of annealing time
x
C(x,Θ)
1
2
3
4
0 L
Fig.4b. Distributions of concentration of implanted dopant in depth of heterostructure from Fig. 1 for dif-
ferent values of annealing time (curves 2-4) and idealized step-wise approximation (curve 1). Increasing of
number of curve corresponds to increasing of annealing time
We show optimal values of annealing time as functions of parameters on Figs. 5. It is known, that
standard step of manufactured ion-doped structures is annealing of radiation defects. In the ideal
case after finishing the annealing dopant achieves interface between layers of heterostructure. If
the dopant has no enough time to achieve the interface, it is practicably to anneal the dopant addi-
tionally. The Fig. 5b shows the described dependences of optimal values of additional annealing
time for the same parameters as for Fig. 5a. Necessity to anneal radiation defects leads to smaller
values of optimal annealing of implanted dopant in comparison with optimal annealing time of
infused dopant.
0.0 0.1 0.2 0.3 0.4 0.5
a/L, ξ, ε, γ
0.0
0.1
0.2
0.3
0.4
0.5
ΘD0L
-2
3
2
4
1
Fig.5a. Dimensionless optimal annealing time of infused dopant as a function of several parameters. Curve
1 describes the dependence of the annealing time on the relation a/L and ξ =γ =0 for equal to each other
values of dopant diffusion coefficient in all parts of heterostructure. Curve 2 describes the dependence of
the annealing time on value of parameter ε for a/L=1/2 and ξ =γ =0. Curve 3 describes the dependence of
the annealing time on value of parameter ξ for a/L=1/2 and ε=γ =0. Curve 4 describes the dependence of
the annealing time on value of parameter γ for a/L=1/2 and ε=ξ =0
10. International Journal of Applied Control, Electrical and Electronics Engineering (IJACEEE) Vol 3, No.3, August 2015
10
0.0 0.1 0.2 0.3 0.4 0.5
a/L, ξ, ε, γ
0.00
0.04
0.08
0.12
ΘD0
L
-2
3
2
4
1
Fig.5b. Dimensionless optimal annealing time of implanted dopant as a function of several parameters.
Curve 1 describes the dependence of the annealing time on the relation a/L and ξ =γ =0 for equal to each
other values of dopant diffusion coefficient in all parts of heterostructure. Curve 2 describes the dependence
of the annealing time on value of parameter ε for a/L=1/2 and ξ =γ =0. Curve 3 describes the dependence
of the annealing time on value of parameter ξ for a/L=1/2 and ε=γ =0. Curve 4 describes the dependence of
the annealing time on value of parameter γ for a/L=1/2 and ε=ξ =0
4. CONCLUSIONS
In this paper we introduce an approach of vertical integration framework element of transistor-
transistor logic. The approach gives us possibility to decrease area of the elements with smaller
increasing of the element’s thickness.
ACKNOWLEDGEMENTS
This work is supported by the agreement of August 27, 2013 № 02.В.49.21.0003 between The
Ministry of education and science of the Russian Federation and Lobachevsky State University of
Nizhni Novgorod and educational fellowship for scientific research of Government of Russian
and of Nizhny Novgorod State University of Architecture and Civil Engineering.
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12
Authors
Pankratov Evgeny Leonidovich was born at 1977. From 1985 to 1995 he was educated in a secondary
school in Nizhny Novgorod. From 1995 to 2004 he was educated in Nizhny Novgorod State University:
from 1995 to 1999 it was bachelor course in Radiophysics, from 1999 to 2001 it was master course in Ra-
diophysics with specialization in Statistical Radiophysics, from 2001 to 2004 it was PhD course in Radio-
physics. From 2004 to 2008 E.L. Pankratov was a leading technologist in Institute for Physics of Micro-
structures. From 2008 to 2012 E.L. Pankratov was a senior lecture/Associate Professor of Nizhny Novgo-
rod State University of Architecture and Civil Engineering. Now E.L. Pankratov is in his Full Doctor
course in Radiophysical Department of Nizhny Novgorod State University. He has 110 published papers in
area of his researches.
Bulaeva Elena Alexeevna was born at 1991. From 1997 to 2007 she was educated in secondary school of
village Kochunovo of Nizhny Novgorod region. From 2007 to 2009 she was educated in boarding school
“Center for gifted children”. From 2009 she is a student of Nizhny Novgorod State University of Architec-
ture and Civil Engineering (spatiality “Assessment and management of real estate”). At the same time she
is a student of courses “Translator in the field of professional communication” and “Design (interior art)” in
the University. E.A. Bulaeva was a contributor of grant of President of Russia (grant № MK-548.2010.2).
She has 74 published papers in area of her researches.
APPENDIX
Equations for the functions ( )ϑφηχ ,,,
~
ijkI and ( )ϑφηχ ,,,
~
ijkV , i ≥0, j ≥0, k ≥0 and conditions for
them
( ) ( ) ( ) ( )
2
000
2
0
0
2
000
2
0
0
2
000
2
0
0000 ,,,
~
,,,
~
,,,
~
,,,
~
φ
ϑφηχ
η
ϑφηχ
χ
ϑφηχ
ϑ
ϑφηχ
∂
∂
+
∂
∂
+
∂
∂
=
∂
∂ I
D
DI
D
DI
D
DI
V
I
V
I
V
I
( ) ( ) ( ) ( )
2
000
2
0
0
2
000
2
0
0
2
000
2
0
0000 ,,,
~
,,,
~
,,,
~
,,,
~
φ
ϑφηχ
η
ϑφηχ
χ
ϑφηχ
ϑ
ϑφηχ
∂
∂
+
∂
∂
+
∂
∂
=
∂
∂ V
D
DV
D
DV
D
DV
I
V
I
V
I
V
;
( ) ( ) ( ) ( )
( )
×
∂
∂
+
∂
∂
+
∂
∂
+
∂
∂
=
∂
∂
Tg
III
D
DI
I
iii
V
Ii
,,,
,,,
~
,,,
~
,,,
~
,
~
2
00
2
2
00
2
2
00
2
0
000
φηχ
χφ
ϑφηχ
η
ϑφηχ
χ
ϑφηχ
ϑ
ϑχ
( )
( )
( )
( )
×
∂
∂
+
∂
∂
∂
∂
+
∂
∂
× −−
Tg
I
Tg
D
D
D
DI
I
i
I
V
I
V
Ii
,,,
,,,
~
,,,
,,,
~
100
0
0
0
0100
φηχ
φη
ϑφηχ
φηχ
ηχ
ϑφηχ
( )
V
Ii
D
DI
0
0100 ,,,
~
∂
∂
× −
φ
ϑφηχ
, i ≥1,
( ) ( ) ( ) ( )
( )
×
∂
∂
+
∂
∂
+
∂
∂
+
∂
∂
=
∂
∂
Tg
VVV
D
DV
V
iii
I
Vi
,,,
,,,
~
,,,
~
,,,
~
,
~
2
00
2
2
00
2
2
00
2
0
000
φηχ
χφ
ϑφηχ
η
ϑφηχ
χ
ϑφηχ
ϑ
ϑχ
( )
( )
( )
( )
×
∂
∂
+
∂
∂
∂
∂
+
∂
∂
× −−
Tg
V
Tg
D
D
D
DV
V
i
V
I
V
I
Vi
,,,
,,,
~
,,,
,,,
~
100
0
0
0
0100
φηχ
φη
ϑφηχ
φηχ
ηχ
ϑφηχ
( )
I
Vi
D
DV
0
0100 ,,,
~
∂
∂
× −
φ
ϑφηχ
, i ≥1,