This document compares MOSFET models in Micro-Cap and PSpice simulation software. It includes SPICE netlists for a standard MOSFET model and compares characteristics such as Vgs-Id, Rds(on), gate charge, switching time, output characteristics, and body diode forward current between the two simulators. Minor parameter differences are noted between the Micro-Cap and PSpice models.

1. MOSFET Model
PSpice vs. Micro-Cap
Toshiba TPCA8003-H Standard
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Content
 Micro-Cap vs. PSpice
 Spice Net list (Standard Model)
 Vgs-Id Characteristics
Vgs-Id Characteristics Comparison
 Rds(on) Characteristics
Rds(on) Characteristics Comparison
 Gate Charge Characteristics
Gate Charge Characteristics Comparison
 Switching Time Characteristics
Switching Time Characteristics Comparison
 Output Characteristics
 BODY DIODE Forward Current
BODY DIODE Forward Current Comparison
 Reverse Recovery Characteristics
Reverse Recovery Characteristics Comparison
 Zener Voltage Characteristics

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Micro-Cap vs. PSpice
IKF does not influence the I-V characteristics of diode
model in Micro-Cap
BV use a few different in Micro-Cap and PSpice

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Spice Net list (Standard Model)
Micro-CapPSpice
.SUBCKT TPCA8003-H 1 2 3 4 5 6 7 8
M_M1 D 4 S S M8003
D_D1 S D D8003
X_U3 4 S DZ8003
R_R1 1 S 0.01u
R_R2 2 S 0.01u
R_R3 3 S 0.01u
R_R4 5 D 0.01u
R_R5 6 D 0.01u
R_R6 7 D 0.01u
R_R7 8 D 0.01u
.ENDS
.MODEL M8003 NMOS
+ LEVEL=3 L=1.9200E-6 W=2.9006 KP=43.099E-6
+ RS=1.0000E-3 RD=2.1115E-3 VTO=2.1460
+ RDS=3.0000E6 TOX=100.000E-9 CGSO=2.5707E-15
+ CGDO=56.332E-12 CBD=1.0000E-9 MJ=.49122 PB=.90622
+ RG=6.3 RB=1 N=5 IS=1E-15 GAMMA=0 ETA=.08 KAPPA=0
.MODEL D8003 D
+ IS=65.718E-12 N=1.0991 RS=916.53E-6
+ IKF=9.8612 BV=100 IBV=100.00E-6
+ TT=52.19E-9
.subckt DZ8003 1 2
D2 1 3 DZ2
D1 2 3 DZ1
.model DZ1 D
+ IS=0.01p N=0.1 ISR=0
+ BV=26.4 IBV=0.001 RS=747
.model DZ2 D
+ IS=0.01p N=0.1 ISR=0
+ BV=26.4 IBV=0.001 RS=0
.ENDS
.SUBCKT TPCA8003-H 1 2 3 4 5 6 7 8
M_M1 D 4 S S M8003
D_D1 S D D8003
X_U3 4 S DZ8003
R_R1 1 S 0.01u
R_R2 2 S 0.01u
R_R3 3 S 0.01u
R_R4 5 D 0.01u
R_R5 6 D 0.01u
R_R6 7 D 0.01u
R_R7 8 D 0.01u
.ENDS
.MODEL M8003 NMOS
+ LEVEL=3 L=1.9200E-6 W=2.9006 KP=43.099E-6
+ RS=1.0000E-3 RD=2.1115E-3 VTO=2.1460
+ RDS=3.0000E6 TOX=100.000E-9 CGSO=2.5707E-15
+ CGDO=56.332E-12 CBD=1.0000E-9 MJ=.49122 PB=.90622
+ RG=6.3 RB=1 N=5 IS=1E-15 GAMMA=0 ETA=.08 KAPPA=0
.MODEL D8003 D
+ IS=65.718E-12 N=1.0991 RS=916.53E-6
+ IBV=100 IBV=100.00E-6
+ TT=52.19E-9
.subckt DZ8003 1 2
D2 1 3 DZ2
D1 2 3 DZ1
.model DZ1 D
+ IS=0.01p N=0.1 ISR=0
+ BV=27.557 IBV=0.001 RS=747
.model DZ2 D
+ IS=0.01p N=0.1 ISR=0
+ BV=27.557 IBV=0.001 RS=0
.ENDS
Modified parameters

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Vgs-Id Characteristics
Micro-CapPSpice
V 2
0 V d c
V 1
1 0
V 3
0 V d c
U 1
T P C A 8 0 0 3 - H
0
V_ V2
0 V 1 . 0 V 2 . 0 V 3 . 0 V 4 . 0 V 5 . 0 V 6 . 0 V
I ( V3 )
0 A
2 0 A
4 0 A
6 0 A
8 0 A
1 0 0 A
Simulation result
Evaluation Circuit
0.000 1.000 2.000 3.000 4.000 5.000 6.000
0.000
10.000
20.000
30.000
40.000
50.000
60.000
70.000
80.000
90.000
100.000
I(V3) (A)
V(V2)
vgs-Id.CIR
X1
TPCA8003-H
V1
10
V3
0
V2
0
Simulation result
Evaluation Circuit

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Vgs-Id Characteristics Comparison
ID (A)
VGS (V)
Meas.
PSpice Micro-Cap
Sim.
Error
(%)
Sim
Error
(%)
1 2.000 2.057 2.850 2.057 2.850
10 2.400 2.447 1.958 2.447 1.958
20 2.600 2.684 3.231 2.684 3.231
30 2.800 2.871 2.536 2.871 2.536
40 3.000 3.030 1.000 3.030 1.000

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Rds(on) Characteristics
Micro-CapPSpice
Simulation result
Evaluation Circuit
Simulation result
Evaluation Circuit
V_ VDS
0 V 2 5 mV 5 0 mV 7 5 mV 1 0 0 mV 1 2 5 mV 1 5 0 mV 1 7 5 mV
I ( V3 )
0 A
4 A
8 A
1 2 A
1 6 A
2 0 A
V 3
0 V d c
V D S
0 V d c
V 1
1 0
U 1
T P C A 8 0 0 3 - H
0
0.000m 50.000m 100.000m 150.000m 200.000m
0.000
2.000
4.000
6.000
8.000
10.000
12.000
14.000
16.000
18.000
20.000
I(V3) (A)
V(VDS)
rds-on.CIR
X1
TPCA8003-H VDS
0
V3
0
VGS
10

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Rds(on) Characteristics Comparison
Meas.
(Ohm)
PSpice Micro-Cap
Sim. Error (%) Sim Error (%)
RDS(ON) 5.100 5.075 -0.49 5.075 -0.49

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Gate Charge Characteristics
Micro-CapPSpice
Simulation result
Evaluation Circuit
Simulation result
Evaluation Circuit
V D D
2 4
I 1T D = 0
T F = 5 n
P W = 6 0 0 u
P E R = 1 0 0 0 u
I 1 = 0
I 2 = 1 m
T R = 5 n -
+
W 1
I O N = 0 u A
I O F F = 1 m A
W
I 2
3 5
0
D 1
D b r e a k
U 1
T P C A 8 0 0 3 - H
Ti me* 1mA
0 8n 16n 24n 32n 40n
V( W1: 3)
0V
4V
8V
1 2V
1 6V
0.000n 8.000n 16.000n 24.000n 32.000n 40.000n
0.000
2.000
4.000
6.000
8.000
10.000
12.000
14.000
16.000
V(4) (V)
T*0.001
Gate-charge.CIR
I1
DC 0 AC 0 0 Pulse 0 1m 0 10n 10n 600u 1000u
D1 I2
DC 35 AC 0 0
V2
24
VMOD
0
W1
VMOD
WMOD
X1
TPCA8003-H

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Gate Charge Characteristic Comparison
Mea.
PSpice Micro-Cap
Sim. Error (%) Sim. Error (%)
Qgs(nC) 5.800 5.705 -1.638 5.789 -0.190
Qgd(nC) 5.100 4.971 -2.529 5.087 -0.255
Qg(nC) 25.000 24.545 -2.184 24.715 -1.140

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Switching Time Characteristics
Micro-CapPSpice
Simulation result
Evaluation Circuit
Simulation result
Evaluation Circuit
Ti me
0 . 9 2 u s 0 . 9 6 u s 1 . 0 0 u s 1 . 0 4 u s 1 . 0 8 u s 1 . 1 2 u s 1 . 1 6 u s
V( L 1 : 2 ) V( VDS) / 1 . 5
0 V
4 V
8 V
1 2 V
L1
50n
R1
0.83
R2
4.7
L2
30n
R3
4.7
V1
15
V2
DC 0 AC 0 0 Pulse 0 20 1u 10n 10n 10u 200u
X1
TPCA8003-H
VDS
VGS
0
V D D
1 5 V d c
V 2
T D = 1 u
T F = 5 n
P W = 1 0 u
P E R = 2 0 u
V 1 = 0
T R = 5 n
V 2 = 2 0
V G S
U 1
T P C A 8 0 0 3 - H
L 2
5 0 n H
R 2
4 . 7
R 1
4 . 7
L 1
3 0 n H
V D S
R L
0 . 8 3
V
V
0.92u 0.96u 1.00u 1.04u 1.08u 1.12u 1.16u 1.20u
-2.000
0.000
2.000
4.000
6.000
8.000
10.000
12.000
14.000
V(VGS) (V)
T (Secs)
V(VDS)/1.5
SWITCHING.CIR

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Switching Time Characteristics Comparison
Meas.
PSpice Micro-Cap
Sim. Error (%) Sim Error (%)
ton(ns) 11.000 10.965 -0.318 10.965 -0.318

13. 0.000 1.000 2.000 3.000 4.000 5.000
0.000
10.000
20.000
30.000
40.000
50.000
60.000
70.000
80.000
90.000
100.000
I(V3) (A)
V(V1)
OUTPUT.CIR V2.dc.value=2.6...10
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Output Characteristics
Micro-Cap
Simulation result
Evaluation Circuit
2.8
10
V_ Vv a r i a b l e
0 V 1 . 0 V 2 . 0 V 3 . 0 V 4 . 0 V 5 . 0 V
I ( Vd s e n s e )
0 A
2 0 A
4 0 A
6 0 A
8 0 A
1 0 0 A
VGS=2.6V
3.0
3.2
3.4
3.6
6
8
PSpice
Simulation result
Evaluation Circuit
2.8
10
VGS=2.6V
3.0
3.2
3.4
3.6
6
8
X1
TPCA8003-H
V1
5
V3
0
V2
0
V v a r i a b le
5V s t e p
0
V d s e n c e
0 V d c
U 1
T P C A 8 0 0 3 - H
0

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 BODY DIODE Forward Current
Micro-CapPSpice
Simulation result
Evaluation Circuit
Simulation result
Evaluation Circuit
V_ V1
0 V 0 . 2 V 0 . 4 V 0 . 6 V 0 . 8 V 1 . 0 V
I ( R1 )
0 A
1 0 A
2 0 A
3 0 A
4 0 A
5 0 A
6 0 A
7 0 A
8 0 A
9 0 A
1 0 0 A
0.000 0.200 0.400 0.600 0.800 1.000
0.000
10.000
20.000
30.000
40.000
50.000
60.000
70.000
80.000
90.000
100.000
I(R1) (A)
V(V1)
IV.CIR
V 1
0 V d c
0
R 1
0 . 0 1 m U 1
T P C A 8 0 0 3 - H
R1
0.01m
V1
0
X1
TPCA8003-H

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BODY DIODE Forward Current Comparison
ID (A)
VGS (V)
Meas.
PSpice Micro-Cap
Sim.
Error
(%)
Sim
Error
(%)
0.1 0.600 0.601 0.167 0.601 0.167
0.2 0.620 0.621 0.161 0.621 0.161
0.5 0.650 0.648 -0.308 0.648 -0.308
1 0.670 0.668 -0.299 0.668 -0.299
2 0.695 0.691 -0.576 0.691 -0.576
5 0.72 0.724 0.556 0.724 0.556
10 0.75 0.755 0.667 0.755 0.667
20 0.8 0.795 -0.625 0.795 -0.625
50 0.87 0.871 0.115 0.871 0.115

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 Reverse Recovery Characteristics
Micro-CapPSpice
Simulation result
Evaluation Circuit
Simulation result
Evaluation Circuit
Ti me
0 . 9 2 u s 1 . 0 0 u s 1 . 0 8 u s 1 . 1 6 u s 1 . 2 4 u s 1 . 3 2 u s
I ( R1 )
- 4 0 0 mA
- 3 0 0 mA
- 2 0 0 mA
- 1 0 0 mA
- 0 mA
1 0 0 mA
2 0 0 mA
3 0 0 mA
4 0 0 mA
0.9200.960 1.040 1.120 1.200 1.280 1.320
-400.000
-300.000
-200.000
-100.000
0.000
100.000
200.000
300.000
400.000
I(R1) (mA)
T (uSecs)
trr.CIR
0
U 1
T P C A 8 0 0 3 - HV 1
T D = 1 n s
T F = 7 n s
P W = 1 u s
P E R = 1 0 0 u s
V 1 = - 9 . 4 5 v
T R = 1 0 n s
V 2 = 1 0 . 6 5 v
R 1
5 0
V1
DC 0 AC 0 0 Pulse -9.4 10.6 1n 10n 7n 1u 100u
R1
50
X1
TPCA8003-H

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Reverse Recovery Characteristics Comparison
Meas.
PSpice Micro-Cap
Sim. Error (%) Sim Error (%)
trr(ns) 106.000 105.595 -0.382 105.595 -0.382

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 Zener Voltage Characteristics
Micro-CapPSpice
Simulation result
Evaluation Circuit
Simulation result
Evaluation Circuit
0.000 10.000 20.000 30.000 40.000 50.000
0.000m
1.000m
2.000m
3.000m
4.000m
5.000m
6.000m
7.000m
8.000m
9.000m
10.000m
I(R1) (A)
V(V1)
zener.CIR
0
U 1
T P C A 8 0 0 3 - H
R 2
1 0 0 M E GR 1
0 . 0 0 1 m
V 1
0 V d c
R1
0.01m
V1
0
X1 TPCA8003-H
R2
100MEG
V_ V1
0 V 5 V 1 0 V 1 5 V 2 0 V 2 5 V 3 0 V 3 5 V 4 0 V 4 5 V 5 0 V
I ( R1 )
0 A
1 mA
2 mA
3 mA
4 mA
5 mA
6 mA
7 mA
8 mA
9 mA
1 0 mA