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All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 
1 
Device Modeling Report 
Bee Technologies Inc. 
COMPONENTS: SiC Schottky Barrier Diode 
PART NUMBER: SCS208AGHR 
MANUFACTURER: ROHM 
REMARK: Professional Model
All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 
2 
(2) (3) 
(1) 
Circuit Configuration 
DIODE MODEL PARAMETERS 
PSpice 
model 
parameter 
Model description 
IS Saturation Current 
N Emission Coefficient 
RS Series Resistance 
IKF High-injection Knee Current 
CJO Zero-bias Junction Capacitance 
M Junction Grading Coefficient 
VJ Junction Potential 
ISR Recombination Current Saturation Value 
BV Reverse Breakdown Voltage(a positive value) 
IBV Reverse Breakdown Current(a positive value) 
TT Transit Time 
EG Energy-band Gap
All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 
3 
U1 
SCS208AGHR 
R1 
0.01m 
V1 
0Vdc 
0 
R2 
100MEG 
V _ V 1 
0V 0.5V 1.0V 1.5V 2.0V 2.5V 
I(R1) 
1.0mA 
10mA 
100mA 
1.0A 
10A 
100A 
Forward Current Characteristics 
Circuit Simulation result 
Evaluation circuit
All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 
4 
Comparison Graph Circuit Simulation result 
Comparison table 
IF (A) VF (V) %Error Measurement Simulation 0.001 0.708 0.703 -0.65 0.01 0.768 0.764 -0.59 0.1 0.833 0.828 -0.55 1 0.940 0.939 -0.09 2 1.010 1.014 0.38 5 1.200 1.208 0.63 10 1.500 1.509 0.59 20 2.100 2.094 -0.30
All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 
5 
V ( N 1 6 6 1 0 ) 
10mV 100mV 1.0V 10V 100V 1.0KV 
I(V2)/(650V/10u) 
1.0p 
10p 
100p 
1.0n 
0 
R 
V1 
TD = 0 
TF = 100ns 
PW = 100us 
PER = 10m 
V1 = 0 
TR = 10us 
V2 = 650 
V2 
0Vdc 
R2 
100MEG 
U1 
SCS208AGHR 
Junction Capacitance Characteristic 
Circuit Simulation result 
Evaluation circuit
All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 
6 
Comparison Graph Circuit Simulation result 
Comparison table 
VR(V) CT (pF) %Error Measurement Simulation 0.01 402.000 400.000 -0.50 0.1 390.000 385.467 -1.16 1 290.000 290.606 0.21 10 121.000 115.679 -4.40 20 87.000 83.337 -4.21 50 59.700 56.812 -4.84 100 43.200 45.151 4.52 200 36.500 38.007 4.13 500 31.400 32.65 3.98
All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 
7 
V _ V 1 
0V 100V 200V 300V 400V 500V 600V 
I(R1) 
1.0nA 
10nA 
100nA 
1.0uA 
10uA 
100uA 
V1 
0Vdc 
R1 
100m 
0 
R2 
100G 
U1 
SCS208AGHR 
Reverse Characteristic 
Circuit Simulation result 
Evaluation circuit
All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 
8 
Comparison Graph Circuit Simulation result 
Comparison table 
IR (uA) VR (V) %Error Measurement Simulation 0.001 340.00 326.28 -4.04 0.01 425.00 423.55 -0.34 0.1 510.00 509.34 -0.13 1.2 600.00 600.57 0.10

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SPICE MODEL of SCS208AGHR (Professional Model) in SPICE PARK

  • 1. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 1 Device Modeling Report Bee Technologies Inc. COMPONENTS: SiC Schottky Barrier Diode PART NUMBER: SCS208AGHR MANUFACTURER: ROHM REMARK: Professional Model
  • 2. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 2 (2) (3) (1) Circuit Configuration DIODE MODEL PARAMETERS PSpice model parameter Model description IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current CJO Zero-bias Junction Capacitance M Junction Grading Coefficient VJ Junction Potential ISR Recombination Current Saturation Value BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time EG Energy-band Gap
  • 3. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 3 U1 SCS208AGHR R1 0.01m V1 0Vdc 0 R2 100MEG V _ V 1 0V 0.5V 1.0V 1.5V 2.0V 2.5V I(R1) 1.0mA 10mA 100mA 1.0A 10A 100A Forward Current Characteristics Circuit Simulation result Evaluation circuit
  • 4. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 4 Comparison Graph Circuit Simulation result Comparison table IF (A) VF (V) %Error Measurement Simulation 0.001 0.708 0.703 -0.65 0.01 0.768 0.764 -0.59 0.1 0.833 0.828 -0.55 1 0.940 0.939 -0.09 2 1.010 1.014 0.38 5 1.200 1.208 0.63 10 1.500 1.509 0.59 20 2.100 2.094 -0.30
  • 5. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 5 V ( N 1 6 6 1 0 ) 10mV 100mV 1.0V 10V 100V 1.0KV I(V2)/(650V/10u) 1.0p 10p 100p 1.0n 0 R V1 TD = 0 TF = 100ns PW = 100us PER = 10m V1 = 0 TR = 10us V2 = 650 V2 0Vdc R2 100MEG U1 SCS208AGHR Junction Capacitance Characteristic Circuit Simulation result Evaluation circuit
  • 6. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 6 Comparison Graph Circuit Simulation result Comparison table VR(V) CT (pF) %Error Measurement Simulation 0.01 402.000 400.000 -0.50 0.1 390.000 385.467 -1.16 1 290.000 290.606 0.21 10 121.000 115.679 -4.40 20 87.000 83.337 -4.21 50 59.700 56.812 -4.84 100 43.200 45.151 4.52 200 36.500 38.007 4.13 500 31.400 32.65 3.98
  • 7. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 7 V _ V 1 0V 100V 200V 300V 400V 500V 600V I(R1) 1.0nA 10nA 100nA 1.0uA 10uA 100uA V1 0Vdc R1 100m 0 R2 100G U1 SCS208AGHR Reverse Characteristic Circuit Simulation result Evaluation circuit
  • 8. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 8 Comparison Graph Circuit Simulation result Comparison table IR (uA) VR (V) %Error Measurement Simulation 0.001 340.00 326.28 -4.04 0.01 425.00 423.55 -0.34 0.1 510.00 509.34 -0.13 1.2 600.00 600.57 0.10