This document presents a comprehensive device modeling report for the D3SB80 diode manufactured by Shindengen Bee Technologies. It includes circuit configurations, diode model parameters, forward current characteristics, junction capacitance characteristics, and reverse recovery characteristics, along with corresponding simulation results and measurement comparisons. The report emphasizes performance metrics such as saturation current, junction capacitance, and reverse breakdown voltage.

1. Device Modeling Report
COMPONENTS: DIODE/ GENERAL PURPOSE
RECTIFIER/ STANDARD MODEL
PART NUMBER: D3SB80
MANUFACTURER: Shindengen
Bee Technologies Inc.
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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2. Circuit Configuration
D1
DD3SB80
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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3. DIODE MODEL PARAMETERS
PSpice
model Model description
parameter
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
EG Energy-band Gap
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4. Forward Current Characteristics
Circuit Simulation result
10A
1.0A
100mA
0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V 1.4V 1.6V
I(R1)
V_V1
Evaluation circuit
R1
0.01m
V1 D1
D3SB80
0V
0
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5. Comparison Graph
Circuit Simulation result
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Measurement
Simulation
Forword Current, IF (A)
1
0.1
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
Forward Voltage, VF (V)
Comparison table
VF (V)
IF (A) %Error
Measurement Simulation
0.1 0.750 0.748 -0.27
0.2 0.770 0.773 0.39
0.5 0.810 0.808 -0.25
1 0.840 0.839 -0.12
2 0.875 0.877 0.23
4 0.930 0.923 -0.75
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6. Junction Capacitance Characteristic
Circuit Simulation result
100p
90p
80p
70p
60p
50p
40p
30p
20p
10p
100mV 1.0V 10V 100V
I(V2)/(800V/1u)
V(R)
Evaluation circuit
V2
R
0V
V1 = 0 V1 D1
V2 = 800 D3SB80
TD = 0
TR = 1us
TF = 100ns
PW = 100us
PER = 10ms
0
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7. Comparison Graph
Circuit Simulation result
100
Measurement
90 Simulation
80
Capacitance, C (pF)
70
60
50
40
30
20
10
0.1 1 10 100
Reverse Voltage, VR (V)
Comparison table
C (pF)
VR (V) %Error
Measurement Simulation
0.1 89.748 89.900 0.17
0.2 85.335 85.317 -0.02
0.5 75.662 75.900 0.31
1 66.916 67.088 0.26
2 57.441 57.600 0.28
5 45.863 45.600 -0.57
10 38.075 37.800 -0.72
20 31.252 31.135 -0.37
50 23.868 24.063 0.82
100 19.424 19.800 1.94
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8. Reverse Recovery Characteristics
Circuit Simulation result
400mA
300mA
200mA
100mA
-0mA
-100mA
-200mA
-300mA
-400mA
12us 16us 20us 24us 28us 32us 36us 40us 44us 48us 52us
I(R1)
Time
Evaluation circuit
R1
50
V1 = -9.23V
V2 = 10.7V
TD = 0us V1 D1
TR = 10ns D3SB80
TF = 10ns
PW = 20us
PER = 60us
0
Comparison Measurement vs. Simulation
Parameter Unit Measurement Simulation %Error
trj us 6.56 6.51 -0.76
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9. Reverse Recovery Characteristics Reference
Trj = 6.56 (us)
Trb = 4.96 (us)
Conditions: Ifwd = lrev = 0.2(A), Rl = 50
Example
Relation between trj and trb
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