The document is a device modeling report for the L105AA pin diode, manufactured by Litec Corporation. It includes a detailed description of the PSpice model parameters, forward and junction capacitance characteristic circuit simulation results, and includes comparison graphs displaying measured versus simulated values. The document also covers reverse characteristics and presents error analysis for the simulations conducted.

1. Device Modeling Report
COMPONENTS: PIN Diode
PART NUMBER: L105AA
MANUFACTURER: Litec Corporation
Bee Technologies Inc.
All Rights Reserved Copyright (C) Bee Technologies Inc. 2005

2. PSpice model
Model description
parameter
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
EG Energy-band Gap
All Rights Reserved Copyright (C) Bee Technologies Inc. 2005

3. Forward Current Characteristic
Circuit Simulation Result
100mA
10mA
1.0mA
100uA
0.3V 0.5V 0.7V 0.9V 1.1V
I(R1)
V_V1
Evaluation Circuit
R1
0.01m
V1
0Vdc U1
L105AA
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2005

4. Comparison Graph
Circuit Simulation Result
Simulation Result
VF(V)
IF(mA) Error(%)
Measurement Simulation
0.100 0.580 0.586 1.034
0.200 0.620 0.616 -0.645
0.500 0.665 0.660 -0.752
1.000 0.707 0.702 -0.707
2.000 0.750 0.748 -0.267
5.000 0.810 0.813 0.370
10.000 0.860 0.864 0.465
20.000 0.910 0.915 0.549
50.000 0.985 0.986 0.102
100.000 1.045 1.043 -0.191
All Rights Reserved Copyright (C) Bee Technologies Inc. 2005

5. Junction Capacitance Characteristic
Circuit Simulation Result
10p
1.0p
100f
10f
100mV 1.0V 10V 100V
I(V2)/(50V/1us)
V(U1:K)
Evaluation Circuit
V2
V2 = 50
0Vdc
V1 = 0
V1 U1
TD = 0
L105AA
TR = 1us
TF = 10ns
PW = 50us
PER = 10us
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2005

6. Comparison Graph
Circuit Simulation Result
Simulation Result
Ct(pF)
VR(V)+0.65 Error(%)
Measurement Simulation
0.750 0.880 0.840 -4.545
0.850 0.850 0.845 -0.588
1.150 0.820 0.834 1.707
1.650 0.790 0.822 4.051
2.650 0.785 0.797 1.529
5.650 0.750 0.740 -1.333
10.650 0.690 0.678 -1.739
20.650 0.600 0.604 0.667
50.650 0.500 0.504 0.800
All Rights Reserved Copyright (C) Bee Technologies Inc. 2005

7. Reverse Characteristic
Circuit Simulation Result
10nA
1.0nA
100pA
100mV 1.0V 10V 100V
- I(V1)
V_V1
Evaluation Circuit
R1
0.01m
V1 U1
0Vdc
L105AA
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2005

8. Comparison Graph
Circuit Simulation Result
Simulation Result
VR(V)
IR(nA) Error(%)
Measurement Simulation
1.000 1.100 1.094 -0.545
2.000 14.500 14.319 -1.248
3.000 30.000 29.643 -1.190
4.000 50.000 48.576 -2.848
All Rights Reserved Copyright (C) Bee Technologies Inc. 2005