SPICE MODEL of GT15J102 (Standard Without Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
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This document summarizes the results of device modeling simulations for an Insulated Gate Bipolar Transistor (IGBT) chip. It describes the model parameters, shows the transfer characteristics, fall time characteristics, gate charge characteristics, and saturation characteristics from the simulation. The summary compares the simulation results to measurements and shows good agreement within a few percent error.
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SPICE MODEL of GT15J103(SM) (Standard Without Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
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SPICE MODEL of GT25Q101 (Standard Without Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
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SPICE MODEL of GT8J101 (Standard Without Model) in SPICE PARKTsuyoshi Horigome
This document summarizes the results of a device modeling report for an Insulated Gate Bipolar Transistor (IGBT) with part number GT8J101 manufactured by TOSHIBA. It describes the model parameters, provides simulation results for transfer characteristics, fall time characteristics, gate charge characteristics and saturation characteristics, and compares the simulation results to measurements with low error percentages.
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This document summarizes the results of device modeling simulations for an Insulated Gate Bipolar Transistor (IGBT) chip. It describes the model parameters, shows the transfer characteristics, fall time characteristics, gate charge characteristics, and saturation characteristics from the simulation. The summary compares the simulation results to measurements and shows good agreement within a few percent error.
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SPICE MODEL of GT15J103(SM) (Standard Without Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
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SPICE MODEL of GT25Q101 (Standard Without Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
This document contains a device modeling report for a Junction Field Effect Transistor (JFET) with part number 2N4416 manufactured by Vishay Siliconix. It includes the JFET model parameters, graphs comparing simulated and measured characteristics, and evaluation of the JFET model in circuit simulations.
This document summarizes the device modeling report for a Junction Field Effect Transistor (JFET) with part number 2N4416 manufactured by Vishay Siliconix. It includes parameters for the PSpice model, graphs comparing measurement and simulation results for transconductance, transfer curve, reverse transfer capacitance, input capacitance, and passive and active gate leakage characteristics. Good agreement is shown between measurements and simulations with errors generally below 5%.
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FREE SPICE MODEL of CLH02 in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
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SPICE MODEL of GT8Q101 (Standard Without Model) in SPICE PARKTsuyoshi Horigome
SPICE MODEL of GT8Q101 (Standard Without Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
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FREE SPICE MODEL of CLH01 in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
This document provides a SPICE model and characterization data for the 1SS370 general purpose rectifier diode manufactured by Toshiba. It includes:
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- Graphs comparing the simulated and measured forward voltage, capacitance, and reverse recovery characteristics.
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- Tables with the simulated and measured values for each characteristic.
FREE SPICE MODEL of S3K60 in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
This document summarizes the specifications and SPICE model for a Shindengen S3L60 general purpose rectifier diode. It includes:
1) The diode's component details, manufacturer part number, and SPICE model parameters.
2) Simulation results showing the diode's forward and reverse characteristics, including I-V curves and junction capacitance.
3) Comparison of the simulated and measured forward voltage, capacitance, and reverse recovery time.
FREE SPICE MODEL of 1SS397 in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
This document summarizes the results of device modeling simulations for a BRT transistor with part number RN1104FT. The summary includes:
- Circuit simulations of the transistor's ON and OFF characteristics, current gain, and output voltage vs. current characteristics.
- Comparison graphs showing the simulation results match well with manufacturer datasheet specifications, with most errors under 5%.
- The report was generated by Bee Technologies Inc. to model the electrical behavior of the transistor.
This document summarizes the PSpice model for a Junction Field Effect Transistor (JFET) with part number 2N3819. It describes the model parameters, shows circuit simulations for the transfer curve, reverse transfer capacitance, input capacitance, and passive and active gate leakage. The simulations demonstrate good agreement with measurements, with most errors under 5%.
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FREE SPICE MODEL of CLH02 in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
SPICE MODEL of GT10J321 (Standard+FWDP Model) in SPICE PARKTsuyoshi Horigome
SPICE MODEL of GT10J321 (Standard+FWDP Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
SPICE MODEL of GT8Q101 (Standard Without Model) in SPICE PARKTsuyoshi Horigome
SPICE MODEL of GT8Q101 (Standard Without Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
SPICE MODEL of GT15J321 (Professional+FWD+SP LTspice Model) in SPICE PARKTsuyoshi Horigome
SPICE MODEL of GT15J321 (Professional+FWD+SP LTspice Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
SPICE MODEL of GT15J321 (Professional+FWDP LTspice Model) in SPICE PARKTsuyoshi Horigome
SPICE MODEL of GT15J321 (Professional+FWDP LTspice Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
SPICE MODEL of GT15J321 (Professional+FWDS LTspice Model) in SPICE PARKTsuyoshi Horigome
The document is a device modeling report for an Insulated Gate Bipolar Transistor (IGBT) manufactured by Toshiba. It includes the part number, simulations of the IGBT's transfer characteristics, comparison graphs between measured and simulated values, and evaluations of the IGBT's fall time, gate charge, saturation, forward current, and reverse recovery characteristics. Simulation results show good agreement with measurements, with most errors under 2%.
This document summarizes the modeling and simulation of the BRT RN1104FV transistor from Toshiba. It includes the transistor parameters, evaluation circuits used, and comparison of simulation results to datasheet specifications for key transistor characteristics like input/output voltage and current relationships, gain, and saturation voltage. The simulation results match the datasheet specifications with less than 5% error for most test conditions.
This document summarizes the results of device modeling simulations for a BRT transistor. It includes parameter definitions, circuit diagrams used in the simulations, and comparison tables showing the simulation results match the datasheet specifications within a small error percentage for key transistor characteristics like ON resistance, OFF capacitance, current gain, and output voltage.
This document provides a device modeling report for a BRT part number RN1114FV transistor manufactured by Toshiba. It includes parameters for the PSpice model and graphs comparing the simulation results to the datasheet specifications for various transistor characteristics like ON resistance, OFF resistance, current gain, and voltage drop across the collector and emitter. The simulation shows good agreement with the datasheet within a few percent error.
This document summarizes the results of device modeling simulations for a BRT transistor with part number RN1417. The simulations analyzed key characteristics including input/output voltage and current relationships under ON/OFF conditions, DC current gain, and output voltage versus output current. The simulation results were compared to datasheet specifications, with most errors being less than 5%.
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SPICE MODEL of GT15J102 (Standard Without Model) in SPICE PARK
1. Device Modeling Report
COMPONENTS: Insulated Gate Bipolar Transistor (IGBT)
PART NUMBER: GT15J102
MANUFACTURER: TOSHIBA
Bee Technologies Inc.
All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
2. PSpice model
Model description
parameter
TAU Ambipolar Recombination Lifetime
KP MOS Transconductance
AREA Area of the Device
AGD Gate-Drain Overlap Area
WB Metallurgical Base Width
VT Threshold Voltage
KF Triode Region Factor
CGS Gate-Source Capacitance per Unit Area
COXD Gate-Drain Oxide Capacitance per Unit Area
VTD Gate-Drain Overlap Depletion Threshold
All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
4. Comparison Graph
Circuit Simulation Result
Simulation Result
Test condition : Vce = 5 V
Vge(V)
Ic(A) Error (%)
Measurement Simulation
1 6.8 6.8090 0.13235
2 7.4 7.3933 -0.09054
5 8.5 8.5843 0.99176
10 9.9 9.925 0.25253
15 11 10.997 -0.02727
All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
5. Fall Time Characteristics
Circuit Simulation result
Evaluation circuit
Test condition Ic=15(A) ,Vcc=300(V)
tf Measurement Simulation Error
150 ns 150.347 ns 0.23133
All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
6. Gate Charge Characteristics
Circuit Simulation result
Evaluation circuit
Test condition : Vcc=200(V) ,Ic=20(A) ,Vge=16(V)
Measurement Simulation Error(%)
Qge 8 nc 8.0899 nc 1.12375
Qgc 32 nc 33.371 nc 4.28438
Qg 61 nc 61.195 nc 0.31967
All Rights Reserved Copyright (C) Bee Technologies Inc. 2005