This document summarizes the device modeling report for a Junction Field Effect Transistor (JFET) with part number 2N4416 manufactured by Vishay Siliconix. It includes parameters for the PSpice model, graphs comparing measurement and simulation results for transconductance, transfer curve, reverse transfer capacitance, input capacitance, and passive and active gate leakage characteristics. Good agreement is shown between measurements and simulations with errors generally below 5%.