1) N-type InAs thin films grown on silicon wafers were annealed at 550°C and analyzed to observe the effects on electrical properties and microstructure.
2) Hall effect measurements showed annealed samples had lower electron mobility, higher sheet resistance, and similar carrier concentration compared to non-annealed samples.
3) Transmission electron microscopy images revealed strains and defects remained distributed in annealed samples, accounting for lower mobility. Annealing increased defects in the InAs crystal structure.
The document summarizes research on the effects of annealing on N-type indium arsenide (InAs) thin films grown on silicon substrates. Hall effect measurements and transmission electron microscopy analysis were used to analyze electrical properties and defect density. The results showed that annealing at 550°C decreased electron mobility by 7% and increased sheet resistance by 59% in the InAs films. Transmission electron micrographs revealed a higher defect concentration in the annealed samples, suggesting annealing relieved stresses but introduced more defects due to the mismatch between the InAs and Si crystal structures. Therefore, annealing had a negative impact on the electrical properties of thin InAs films for semiconductor applications.
Shan Jafri developed flexible sodium ion selective electrodes for biological applications. Electrodes were fabricated from silicon wafers and transferred to stretchable silicone substrates. The electrodes were tested for sensitivity to sodium and potassium ions. Results showed the electrodes could detect low sodium concentrations but there was some interference from potassium ions. The goal was to create arrays of microelectrodes with mechanical flexibility and high concentration gradients for biological use.
This document summarizes an experiment studying the effect of applying a high voltage DC current to a jet fuel stream. The researchers observed that applying voltage caused the liquid stream to break up into droplets that repelled each other along the jet axis, creating a more uniform distribution. It also found the stream would wander about the vertical flow axis when voltage was applied. Future work will aim to quantify surface charge density, measure droplet motion, and perform simulations to better understand the physics involved.
This document summarizes microwave ceramics and dielectric resonator materials. It discusses that ceramic materials are inorganic compounds made of metals and non-metals. Microwaves have wavelengths from 1 meter to 1 mm. Microwave dielectric ceramic materials should have high dielectric constant, low loss, and small temperature coefficient. Examples are barium titanate and tantalates. Synthesis methods include solid state reaction and sol-gel. Dielectric resonators are electronic components that exhibit resonance in the microwave band and are used in applications like filters, oscillators, and wireless communication devices. They require materials with high dielectric constant and quality factor.
Fractal analysis of electrical tree grown in silicone rubber nanocompositesTELKOMNIKA JOURNAL
Electrical treeing is one of the main reasons for long-term degradation of high voltage insulation especially in the cable accessory which commonly made from silicone rubber due to non-uniformly structures of the cable accessories. Recently, the combination of nanofillers with the silicone rubber matrix can reduce the possibility of the electrical treeing to grow further by changing its patterns and slow-down its propagation. However, the influences of nanofillers on the tree hindrance and its patterns are not well understood. This paper explores the influence of nanofiller on tree pattern in silicon rubber. The electrical tree patterns were characterized using fractal analysis. The box-counting method was used to measure the fractal dimension and lacunarity to obtain the structure of the tree pattern during the electrical tree growth. The structure of the electrical tree in silicone rubber nanocomposites has higher fractal dimension and lacunarity. Sample with nanofiller possesses dominant fractal dimension of tree growth compared to the sample without nanofiller.
This document summarizes a research study on a novel zinc-ion hybrid supercapacitor (Zn-HSC) for long-life and low-cost energy storage. The key points are:
1) The Zn-HSC was fabricated using zinc foil as both the anode and current collector, and bio-carbon derived porous material as the cathode.
2) The Zn-HSC demonstrated superior electrochemical performance including a high discharge capacitance of 170 F g-1, good rate performance with 85% capacitance retention, a high energy density of 52.7 Wh kg-1, and excellent cycling stability with 91% capacitance retention after 20,000 cycles.
3) The bivalent
Performance of 400 kV line insulators under pollution | PDF | DOC | PPTSeminar Links
Visit https://seminarlinks.blogspot.com to download.
Outdoor insulators are subjected to nature Polluted environmental contaminants, which may include sea salt, cement dust, fly ash, birds droppings, industrial emissions etc. deposit on their surface With the increasing industrialization not only the degree of pollution but also the type of pollution has an effect on the performance of the insulators.
The document summarizes research on the effects of annealing on N-type indium arsenide (InAs) thin films grown on silicon substrates. Hall effect measurements and transmission electron microscopy analysis were used to analyze electrical properties and defect density. The results showed that annealing at 550°C decreased electron mobility by 7% and increased sheet resistance by 59% in the InAs films. Transmission electron micrographs revealed a higher defect concentration in the annealed samples, suggesting annealing relieved stresses but introduced more defects due to the mismatch between the InAs and Si crystal structures. Therefore, annealing had a negative impact on the electrical properties of thin InAs films for semiconductor applications.
Shan Jafri developed flexible sodium ion selective electrodes for biological applications. Electrodes were fabricated from silicon wafers and transferred to stretchable silicone substrates. The electrodes were tested for sensitivity to sodium and potassium ions. Results showed the electrodes could detect low sodium concentrations but there was some interference from potassium ions. The goal was to create arrays of microelectrodes with mechanical flexibility and high concentration gradients for biological use.
This document summarizes an experiment studying the effect of applying a high voltage DC current to a jet fuel stream. The researchers observed that applying voltage caused the liquid stream to break up into droplets that repelled each other along the jet axis, creating a more uniform distribution. It also found the stream would wander about the vertical flow axis when voltage was applied. Future work will aim to quantify surface charge density, measure droplet motion, and perform simulations to better understand the physics involved.
This document summarizes microwave ceramics and dielectric resonator materials. It discusses that ceramic materials are inorganic compounds made of metals and non-metals. Microwaves have wavelengths from 1 meter to 1 mm. Microwave dielectric ceramic materials should have high dielectric constant, low loss, and small temperature coefficient. Examples are barium titanate and tantalates. Synthesis methods include solid state reaction and sol-gel. Dielectric resonators are electronic components that exhibit resonance in the microwave band and are used in applications like filters, oscillators, and wireless communication devices. They require materials with high dielectric constant and quality factor.
Fractal analysis of electrical tree grown in silicone rubber nanocompositesTELKOMNIKA JOURNAL
Electrical treeing is one of the main reasons for long-term degradation of high voltage insulation especially in the cable accessory which commonly made from silicone rubber due to non-uniformly structures of the cable accessories. Recently, the combination of nanofillers with the silicone rubber matrix can reduce the possibility of the electrical treeing to grow further by changing its patterns and slow-down its propagation. However, the influences of nanofillers on the tree hindrance and its patterns are not well understood. This paper explores the influence of nanofiller on tree pattern in silicon rubber. The electrical tree patterns were characterized using fractal analysis. The box-counting method was used to measure the fractal dimension and lacunarity to obtain the structure of the tree pattern during the electrical tree growth. The structure of the electrical tree in silicone rubber nanocomposites has higher fractal dimension and lacunarity. Sample with nanofiller possesses dominant fractal dimension of tree growth compared to the sample without nanofiller.
This document summarizes a research study on a novel zinc-ion hybrid supercapacitor (Zn-HSC) for long-life and low-cost energy storage. The key points are:
1) The Zn-HSC was fabricated using zinc foil as both the anode and current collector, and bio-carbon derived porous material as the cathode.
2) The Zn-HSC demonstrated superior electrochemical performance including a high discharge capacitance of 170 F g-1, good rate performance with 85% capacitance retention, a high energy density of 52.7 Wh kg-1, and excellent cycling stability with 91% capacitance retention after 20,000 cycles.
3) The bivalent
Performance of 400 kV line insulators under pollution | PDF | DOC | PPTSeminar Links
Visit https://seminarlinks.blogspot.com to download.
Outdoor insulators are subjected to nature Polluted environmental contaminants, which may include sea salt, cement dust, fly ash, birds droppings, industrial emissions etc. deposit on their surface With the increasing industrialization not only the degree of pollution but also the type of pollution has an effect on the performance of the insulators.
Production and characterization of nano copper powder using electric explosio...eSAT Publishing House
This document summarizes research on producing nano copper powder using an electric explosion process in liquid media. Key points:
- Nanoparticles were produced by exploding copper wires submerged in distilled water using a high voltage capacitor charged to 30-40kV.
- Particle size could be controlled by varying the injected power. Size was analyzed using SEM and TEM, with most particles between 200-500nm.
- A centrifugal separator was used to classify particles by size. Smaller particles precipitated at higher rpm settings.
- The process successfully produced copper nanoparticles, though some submicron particles also formed from non-vaporized liquid droplets.
This document describes how synchrotron-based X-ray spectroscopy techniques like XANES and STXM can provide insights into structure-performance relationships in battery materials to enable faster optimization. These techniques allow mapping of local chemistry, bonding structure, and phase distributions. Studies have shown how surface coatings and composite designs can influence properties like conductivity and stability. Chemical mapping of electrodes also revealed non-uniform reactions related to "hot spots" that correlate with performance. Faster screening of materials and correlation of structural properties with electrochemical data could significantly reduce battery development timelines.
Investigation into possible electrical fire outbreaks at welders’ worksho...Alexander Decker
This document summarizes an investigation into potential electrical fire risks at welding workshops in Siwdo Kokompe, Ghana. The researcher examined the wiring, electricity distribution, and welding practices. The wiring and fittings at most workshops were found to be in good condition. However, the overuse and improper handling of sockets could pose fire risks due to power overload. The researcher concluded that their investigation did not find significant risks, but improvements could still be made to electrical safety.
IRJET- Design and Fabrication of Air Breathing Solid Oxide Fuel Cell and its ...IRJET Journal
1) Researchers at St. Joseph's Institute of Technology designed and tested an air-breathing solid oxide fuel cell (SOFC) that uses hydrogen gas as fuel.
2) The SOFC was fabricated using nickel oxide and yttria-stabilized zirconia for the anode, yttria-stabilized zirconia for the electrolyte, and lanthanum strontium manganite for the cathode.
3) Testing of the SOFC involved supplying it with hydrogen gas at 800°C and measuring its voltage, current, current density, and power density output under varying loads. The SOFC achieved a maximum current density of 44 mA/cm2 and open circuit
Graphene is a single layer of carbon atoms arranged in a honeycomb lattice. It is the strongest material ever tested and has excellent thermal and electrical conductivity. Graphene was first isolated in 2004 by Geim and Novoselov at the University of Manchester through mechanical exfoliation of graphite using adhesive tape. This earned them the 2010 Nobel Prize in Physics. Potential applications of graphene include use in integrated circuits, transparent conductive electrodes, water purification membranes, gas sensors, and ultracapacitors due to its unique properties.
This document discusses dissolvable films of silk fibroin for creating ultrathin conformal bio-integrated electronics. It covers the motivation and background of using transient electronics that dissolve at programmed rates. Examples are given of using thin silicon and silk membranes that safely dissolve over time for applications like biomedical sensors and drug delivery. The technology allows creating non-invasive electronic devices that conform to various biological surfaces. Future areas of research include further applications within and outside the human body using this novel approach of electronics that disappear without electronic waste.
This document discusses the potential for using graphene in mobile phones. It begins with an introduction to graphene, describing it as a single layer of carbon atoms arranged in a honeycomb lattice. The document then reviews the history of graphene research, the Nobel Prize-winning work isolating graphene layers. It describes graphene's properties like strength, flexibility, transparency and electron mobility. The document compares graphene favorably to silicon in aspects like breakdown voltage and electron transfer speed. It suggests graphene could enable highly flexible, transparent and lightweight mobile phones. The conclusion discusses the future potential for incorporating additional features into graphene phones as costs decrease.
graphene, a wonder material, is useful in many areas.it is multifunctional.till now it is said to be harmless.it is a sure one that graphene is the future of science.scientists have found many applications of graphene and the research goes on.it is said ti have limitless functions.its peculiar properties makes itself unique and efficient.it is eco friendly as it is biodegradable
IRJET- Study and Analysis of the Failed USB Devices used in Copper Mine us...IRJET Journal
The document summarizes a study analyzing failed USB devices that were used to store data from a copper mine. Environmental scanning electron microscopy (ESEM) and energy dispersive x-ray spectroscopy (EDS) were used to examine the devices' surfaces and identify elements present. ESEM imaging found high levels of lead and oxygen via EDS. X-ray photoelectron spectroscopy (XPS) identified copper and iron sulphides as major compounds, indicating exposure to acidic conditions caused the failures. The study concludes more rugged devices are needed to reliably store data in acidic mining environments.
International Journal of Engineering Research and Applications (IJERA) is an open access online peer reviewed international journal that publishes research and review articles in the fields of Computer Science, Neural Networks, Electrical Engineering, Software Engineering, Information Technology, Mechanical Engineering, Chemical Engineering, Plastic Engineering, Food Technology, Textile Engineering, Nano Technology & science, Power Electronics, Electronics & Communication Engineering, Computational mathematics, Image processing, Civil Engineering, Structural Engineering, Environmental Engineering, VLSI Testing & Low Power VLSI Design etc.
The document summarizes the properties and potential applications of graphene. Graphene is a one-atom thick sheet of carbon atoms arranged in a honeycomb lattice. It is the strongest material known, more conductive than silver, and highly transparent. Researchers at the University of Manchester were awarded the Nobel Prize for first isolating graphene sheets. Graphene's unique properties make it promising for applications like faster electronics, stronger and lighter composite materials, better solar cells and displays. However, challenges remain in controlling its conductivity for transistors.
Talking about Carbon-based films and their use as piezoresistive materialsMariana Amorim Fraga
Amorim Fraga, Mariana (2015): Talking about Carbon-based films and their use as piezoresistive materials. figshare.
https://doi.org/10.6084/m9.figshare.2056353.v1
The document summarizes research into using plasmonic silver nanowires to harvest hot electrons for chemical reactions. Nanowires were synthesized inside anodic aluminum oxide nanopores using electrodeposition. Scanning electron microscopy images showed the nanowires had a unique stacked ring structure, and absorption spectroscopy indicated absorption in the visible spectrum. Removing the alumina template left just the silver nanowire structures. Future work will refine the nanostructures and integrate them into a device for energy storage applications.
This document summarizes the properties and potential applications of graphene. Graphene is an extremely thin material made of carbon that is very strong, conductive, and flexible. It has potential uses in electronics, composite materials for vehicles, desalination, biomedical devices, and antibacterial applications. However, large-scale production of graphene remains challenging and it lacks the ability to act as a transistor, limiting its use in digital electronics currently dominated by silicon.
This document summarizes the construction of a substrate for characterizing the electrical conductivity of thin films during atomic layer deposition (ALD). Key steps included:
1) Patterning electrodes on a silicon wafer with thermal oxide using electron beam evaporation of gold and plasma-enhanced chemical vapor deposition of silicon dioxide as an insulating layer.
2) Characterizing the substrate using profilometry, optical microscopy, and scanning electron microscopy to confirm feature sizes and film morphology.
3) Future work involves using the substrate for in situ electrical measurements during ALD to determine when a continuous film forms.
Graphene is a single-atom thick layer of carbon that was discovered in 2004. It has unique electrical, mechanical, and optical properties including high electron mobility, strength stronger than diamond but flexible like rubber, and ability to transmit light. These properties make it promising for applications in electronics, composites, energy storage, and more. Graphene is still in early stages of research and development.
Graphene roadmap and future of graphene based compositesEmad Omrani
This document discusses graphene and graphene composites. It begins with an introduction to graphene, describing how it is synthesized and categorized based on quality. It then discusses graphene's supreme mechanical, electrical, and thermal properties. The document outlines several applications of graphene in areas like flexible electronics, photonics, energy storage, and coatings. It also examines the use of graphene in composite materials, noting challenges in achieving uniform dispersion and bonding. The document emphasizes the benefits of graphene polymer composites and methods for enhancing properties like conductivity. It concludes that further study is needed on mechanical properties at different graphene contents.
Graphene is a single layer of carbon atoms arranged in a honeycomb lattice. It has extraordinary electronic and photonic properties, including high electron mobility, transparency, flexibility, and strength. In 2004, Geim and Novoselov at the University of Manchester first isolated graphene from graphite using mechanical exfoliation. Due to its unique properties, graphene has applications in electronics, energy storage, water purification, and more. It shows promise for use in transparent and flexible electronics, solar panels, batteries, and other technologies.
This document discusses potential nanoscale substitutes for silicon in computer memory devices. It begins by explaining the limitations of silicon due to Moore's law and the physical challenges of continuing to shrink transistors. Then it examines several potential substitutes like indium gallium arsenide, vanadium oxide bronze, and carbon nanotubes. For each material, it provides details on their synthesis and properties that make them promising replacements for silicon. It suggests that within the next two decades, computer chips made from these nanoscale substitutes will replace current silicon-based chips due to their ability to store more information at lower power.
The document discusses graphene, a one-atom thick layer of carbon atoms arranged in a honeycomb lattice. It describes graphene's structure, properties, methods of synthesis, and potential applications. Graphene is the strongest and most conductive material known. It is flexible, transparent, and an excellent conductor of heat and electricity. The document outlines how graphene could potentially be used in electronics, batteries, solar cells, touchscreens, and more. Graphene is seen as a promising material that may someday replace silicon in applications like transistors and integrated circuits.
This document describes a memristor device using a heterojunction of silver nanoparticles and aluminum oxide for resistive switching applications. The device consists of an aluminum-aluminum oxide-silver nanoparticles-aluminum structure. Current-voltage measurements show a transition between two states, with a resistance ratio of 105 for the major transition and a ratio of 101 for the minor transition. Scanning electron microscopy images confirm the growth of a thin aluminum oxide film consisting of spherical nanoparticles approximately 40nm in size on an aluminum substrate. This memristor operates at low voltages and shows potential for non-volatile resistive random access memory.
Aluminum Oxide-Silver Nanoparticle Interfaces for Memristive ApplicationsIOSR Journals
This document summarizes a study on a nonvolatile resistive random access memory device based on the heterojunction of silver nanoparticles and aluminum oxide. The device structure consists of aluminum-aluminum oxide-silver nanoparticles-aluminum. Current-voltage measurements show the device transitions between two states in two steps - a major transition with a resistance ratio of 105 and a minor transition with a ratio of about 101. The memristor operates at low voltages with good uniformity. Scanning electron microscopy, X-ray diffraction and optical absorption characterization confirm the formation of aluminum oxide and silver nanoparticles.
Production and characterization of nano copper powder using electric explosio...eSAT Publishing House
This document summarizes research on producing nano copper powder using an electric explosion process in liquid media. Key points:
- Nanoparticles were produced by exploding copper wires submerged in distilled water using a high voltage capacitor charged to 30-40kV.
- Particle size could be controlled by varying the injected power. Size was analyzed using SEM and TEM, with most particles between 200-500nm.
- A centrifugal separator was used to classify particles by size. Smaller particles precipitated at higher rpm settings.
- The process successfully produced copper nanoparticles, though some submicron particles also formed from non-vaporized liquid droplets.
This document describes how synchrotron-based X-ray spectroscopy techniques like XANES and STXM can provide insights into structure-performance relationships in battery materials to enable faster optimization. These techniques allow mapping of local chemistry, bonding structure, and phase distributions. Studies have shown how surface coatings and composite designs can influence properties like conductivity and stability. Chemical mapping of electrodes also revealed non-uniform reactions related to "hot spots" that correlate with performance. Faster screening of materials and correlation of structural properties with electrochemical data could significantly reduce battery development timelines.
Investigation into possible electrical fire outbreaks at welders’ worksho...Alexander Decker
This document summarizes an investigation into potential electrical fire risks at welding workshops in Siwdo Kokompe, Ghana. The researcher examined the wiring, electricity distribution, and welding practices. The wiring and fittings at most workshops were found to be in good condition. However, the overuse and improper handling of sockets could pose fire risks due to power overload. The researcher concluded that their investigation did not find significant risks, but improvements could still be made to electrical safety.
IRJET- Design and Fabrication of Air Breathing Solid Oxide Fuel Cell and its ...IRJET Journal
1) Researchers at St. Joseph's Institute of Technology designed and tested an air-breathing solid oxide fuel cell (SOFC) that uses hydrogen gas as fuel.
2) The SOFC was fabricated using nickel oxide and yttria-stabilized zirconia for the anode, yttria-stabilized zirconia for the electrolyte, and lanthanum strontium manganite for the cathode.
3) Testing of the SOFC involved supplying it with hydrogen gas at 800°C and measuring its voltage, current, current density, and power density output under varying loads. The SOFC achieved a maximum current density of 44 mA/cm2 and open circuit
Graphene is a single layer of carbon atoms arranged in a honeycomb lattice. It is the strongest material ever tested and has excellent thermal and electrical conductivity. Graphene was first isolated in 2004 by Geim and Novoselov at the University of Manchester through mechanical exfoliation of graphite using adhesive tape. This earned them the 2010 Nobel Prize in Physics. Potential applications of graphene include use in integrated circuits, transparent conductive electrodes, water purification membranes, gas sensors, and ultracapacitors due to its unique properties.
This document discusses dissolvable films of silk fibroin for creating ultrathin conformal bio-integrated electronics. It covers the motivation and background of using transient electronics that dissolve at programmed rates. Examples are given of using thin silicon and silk membranes that safely dissolve over time for applications like biomedical sensors and drug delivery. The technology allows creating non-invasive electronic devices that conform to various biological surfaces. Future areas of research include further applications within and outside the human body using this novel approach of electronics that disappear without electronic waste.
This document discusses the potential for using graphene in mobile phones. It begins with an introduction to graphene, describing it as a single layer of carbon atoms arranged in a honeycomb lattice. The document then reviews the history of graphene research, the Nobel Prize-winning work isolating graphene layers. It describes graphene's properties like strength, flexibility, transparency and electron mobility. The document compares graphene favorably to silicon in aspects like breakdown voltage and electron transfer speed. It suggests graphene could enable highly flexible, transparent and lightweight mobile phones. The conclusion discusses the future potential for incorporating additional features into graphene phones as costs decrease.
graphene, a wonder material, is useful in many areas.it is multifunctional.till now it is said to be harmless.it is a sure one that graphene is the future of science.scientists have found many applications of graphene and the research goes on.it is said ti have limitless functions.its peculiar properties makes itself unique and efficient.it is eco friendly as it is biodegradable
IRJET- Study and Analysis of the Failed USB Devices used in Copper Mine us...IRJET Journal
The document summarizes a study analyzing failed USB devices that were used to store data from a copper mine. Environmental scanning electron microscopy (ESEM) and energy dispersive x-ray spectroscopy (EDS) were used to examine the devices' surfaces and identify elements present. ESEM imaging found high levels of lead and oxygen via EDS. X-ray photoelectron spectroscopy (XPS) identified copper and iron sulphides as major compounds, indicating exposure to acidic conditions caused the failures. The study concludes more rugged devices are needed to reliably store data in acidic mining environments.
International Journal of Engineering Research and Applications (IJERA) is an open access online peer reviewed international journal that publishes research and review articles in the fields of Computer Science, Neural Networks, Electrical Engineering, Software Engineering, Information Technology, Mechanical Engineering, Chemical Engineering, Plastic Engineering, Food Technology, Textile Engineering, Nano Technology & science, Power Electronics, Electronics & Communication Engineering, Computational mathematics, Image processing, Civil Engineering, Structural Engineering, Environmental Engineering, VLSI Testing & Low Power VLSI Design etc.
The document summarizes the properties and potential applications of graphene. Graphene is a one-atom thick sheet of carbon atoms arranged in a honeycomb lattice. It is the strongest material known, more conductive than silver, and highly transparent. Researchers at the University of Manchester were awarded the Nobel Prize for first isolating graphene sheets. Graphene's unique properties make it promising for applications like faster electronics, stronger and lighter composite materials, better solar cells and displays. However, challenges remain in controlling its conductivity for transistors.
Talking about Carbon-based films and their use as piezoresistive materialsMariana Amorim Fraga
Amorim Fraga, Mariana (2015): Talking about Carbon-based films and their use as piezoresistive materials. figshare.
https://doi.org/10.6084/m9.figshare.2056353.v1
The document summarizes research into using plasmonic silver nanowires to harvest hot electrons for chemical reactions. Nanowires were synthesized inside anodic aluminum oxide nanopores using electrodeposition. Scanning electron microscopy images showed the nanowires had a unique stacked ring structure, and absorption spectroscopy indicated absorption in the visible spectrum. Removing the alumina template left just the silver nanowire structures. Future work will refine the nanostructures and integrate them into a device for energy storage applications.
This document summarizes the properties and potential applications of graphene. Graphene is an extremely thin material made of carbon that is very strong, conductive, and flexible. It has potential uses in electronics, composite materials for vehicles, desalination, biomedical devices, and antibacterial applications. However, large-scale production of graphene remains challenging and it lacks the ability to act as a transistor, limiting its use in digital electronics currently dominated by silicon.
This document summarizes the construction of a substrate for characterizing the electrical conductivity of thin films during atomic layer deposition (ALD). Key steps included:
1) Patterning electrodes on a silicon wafer with thermal oxide using electron beam evaporation of gold and plasma-enhanced chemical vapor deposition of silicon dioxide as an insulating layer.
2) Characterizing the substrate using profilometry, optical microscopy, and scanning electron microscopy to confirm feature sizes and film morphology.
3) Future work involves using the substrate for in situ electrical measurements during ALD to determine when a continuous film forms.
Graphene is a single-atom thick layer of carbon that was discovered in 2004. It has unique electrical, mechanical, and optical properties including high electron mobility, strength stronger than diamond but flexible like rubber, and ability to transmit light. These properties make it promising for applications in electronics, composites, energy storage, and more. Graphene is still in early stages of research and development.
Graphene roadmap and future of graphene based compositesEmad Omrani
This document discusses graphene and graphene composites. It begins with an introduction to graphene, describing how it is synthesized and categorized based on quality. It then discusses graphene's supreme mechanical, electrical, and thermal properties. The document outlines several applications of graphene in areas like flexible electronics, photonics, energy storage, and coatings. It also examines the use of graphene in composite materials, noting challenges in achieving uniform dispersion and bonding. The document emphasizes the benefits of graphene polymer composites and methods for enhancing properties like conductivity. It concludes that further study is needed on mechanical properties at different graphene contents.
Graphene is a single layer of carbon atoms arranged in a honeycomb lattice. It has extraordinary electronic and photonic properties, including high electron mobility, transparency, flexibility, and strength. In 2004, Geim and Novoselov at the University of Manchester first isolated graphene from graphite using mechanical exfoliation. Due to its unique properties, graphene has applications in electronics, energy storage, water purification, and more. It shows promise for use in transparent and flexible electronics, solar panels, batteries, and other technologies.
This document discusses potential nanoscale substitutes for silicon in computer memory devices. It begins by explaining the limitations of silicon due to Moore's law and the physical challenges of continuing to shrink transistors. Then it examines several potential substitutes like indium gallium arsenide, vanadium oxide bronze, and carbon nanotubes. For each material, it provides details on their synthesis and properties that make them promising replacements for silicon. It suggests that within the next two decades, computer chips made from these nanoscale substitutes will replace current silicon-based chips due to their ability to store more information at lower power.
The document discusses graphene, a one-atom thick layer of carbon atoms arranged in a honeycomb lattice. It describes graphene's structure, properties, methods of synthesis, and potential applications. Graphene is the strongest and most conductive material known. It is flexible, transparent, and an excellent conductor of heat and electricity. The document outlines how graphene could potentially be used in electronics, batteries, solar cells, touchscreens, and more. Graphene is seen as a promising material that may someday replace silicon in applications like transistors and integrated circuits.
This document describes a memristor device using a heterojunction of silver nanoparticles and aluminum oxide for resistive switching applications. The device consists of an aluminum-aluminum oxide-silver nanoparticles-aluminum structure. Current-voltage measurements show a transition between two states, with a resistance ratio of 105 for the major transition and a ratio of 101 for the minor transition. Scanning electron microscopy images confirm the growth of a thin aluminum oxide film consisting of spherical nanoparticles approximately 40nm in size on an aluminum substrate. This memristor operates at low voltages and shows potential for non-volatile resistive random access memory.
Aluminum Oxide-Silver Nanoparticle Interfaces for Memristive ApplicationsIOSR Journals
This document summarizes a study on a nonvolatile resistive random access memory device based on the heterojunction of silver nanoparticles and aluminum oxide. The device structure consists of aluminum-aluminum oxide-silver nanoparticles-aluminum. Current-voltage measurements show the device transitions between two states in two steps - a major transition with a resistance ratio of 105 and a minor transition with a ratio of about 101. The memristor operates at low voltages with good uniformity. Scanning electron microscopy, X-ray diffraction and optical absorption characterization confirm the formation of aluminum oxide and silver nanoparticles.
Yutong Liu - Final Report - Anodized Aluminium Oxide (AAO)Yutong Liu
This document summarizes research on forming iron oxide nanoparticles within the nano-pore structures of anodized aluminum oxide (AAO). It first discusses the process of creating the AAO film through a two-step anodization process and its hexagonal pore structure. It then reviews previous work demonstrating the intrinsic peroxidase activity of iron oxide nanoparticles. The research aims to investigate iron oxide nanoparticle formation kinetics within the AAO pores using electrochemical impedance spectroscopy (EIS) and equivalent circuit modeling. The document outlines the experimental design which involves fabricating AAO samples with varying iron hydroxide and iron oxide nanoparticle formation times, and then analyzing them using EIS to model the equivalent circuit and calculate parameter values.
Improving the Dielectric properties of SAMsBen Catchpole
This document summarizes research into improving the dielectric properties of self-assembled monolayers (SAMs) formed from ethylene-glycol terminated alkanethiols. The researchers investigated mixing oligo-ethylene glycol (OEG) terminated alkanethiol monolayers with small concentrations of 11-mercaptoundecanol (MUD). Electrochemical impedance spectroscopy showed that for MUD concentrations up to 5%, the resistivity of the SAM increased and the phase of the impedance decreased, demonstrating improved dielectric properties. An equivalent circuit model is proposed to interpret the impedance spectroscopy data and determine monolayer conductivity. The results show that adding small amounts of MUD as a spacer improves
This document summarizes research on electrodepositing silver nanoparticles onto carbon sphere surfaces using a pulse current. Key findings include:
1) Silver nanoparticles were successfully electrodeposited with a size of 100-400nm after 2 minutes using a pulse current.
2) Deposition occurred on accessible carbon surface sites, forming a monolayer of scattered nanoparticles. Continued deposition led to larger particles and multilayers.
3) Pulse current helped manage monolayer deposition compared to direct current, controlling particle size and number of layers.
Studies on in-Doped Zno Transparent Conducting thin FilmsIJRESJOURNAL
ABSTRACT: In this manuscript we have investigated the influences of indium dopants on zinc oxide (ZnO) thin films regarding physico-chemical properties for application in modern conducting devices. As a starting material, Indium (III) chloride, and Zn(CH3COO)2⋅2H2O were used. The complex TSDC spectrum was obtained by submitting the sample to a constant electrical field Ep = 10M V/m during 2 min at a varing polarization temperature of Tmax = 1500C. A minimal sheet resistance with electrical resistivity as low in the range of 10-3 Ω·cm was found for this thin film.
Dendritic Electroless Deposits of Lead From Lead Acetate Solutioninventionjournals
Electroless deposition of lead from lead acetate is studied in a planar cell geometry. Dendritic patterns are grown using electroless deposition in planar cell geometry. Electroless deposition cell is designed and constructed and the depositions obtained are analysed for self similarity and fractal characterization. Details and findings are presented
the effect of nickel incorporation on some physical properties of epoxy resinINFOGAIN PUBLICATION
The J-E characteristics of samples of epoxy resins mixed with nickel powder in different concentrations have been tested and a log-log straight line behaviour in both the low- and high field regions is observed. Ni-concentration has significant influence on the calculated constants of the J-E relationship. The d.c. electrical resistivity (ρ) of the samples are measured from the room temperature up to about 400 K. The variation of ρ with T obeys the exponential relation of ordinary dielectrics in three temperature regions. The parameters characterizing the ρ -T dependence change considerably with Ni-concentration. Due to the existence of nickel in different concentration a "true" compensation effect is observed with three characteristic compensation temperatures. The mechanical hardness of the samples was investigated as a function of Ni-concentration.
Fabrication and characterization of nickelijoejournal
This paper shows that nickel nanowires of length 11μm and diameters 800 and 15nm were grown within
the pores of nuclear track polycarbonate membrane by electrodepositing nickel. Surface morphology and
crystallographic structure of the deposited nanowires was investigated using SEM, TEM and XRD
respectively. It is found that low current density gives good result, while high current density leads to the
formation of curled nanowires. Fabricated nanowires were further investigated for electrical properties
and found that nanowires obey ohm’s law. Through structural characterization it has been observed that
the fabricated nanowires posses FCC lattice structure.
International Journal of Computational Engineering Research (IJCER) is dedicated to protecting personal information and will make every reasonable effort to handle collected information appropriately. All information collected, as well as related requests, will be handled as carefully and efficiently as possible in accordance with IJCER standards for integrity and objectivity.
1) The document investigates the effect of cation and anion sizes on the charge storage capabilities of graphite nanosheets as electrode materials for electrochemical double layer capacitors.
2) Scanning electron microscope images confirm the layered structure of the graphite nanosheets used, which are 12nm thick with 3.36 Angstrom spacing between layers.
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Final Paper
1. Effects of Annealing in Indium Arsenide grown on Silicon Semiconductor
Materials Science and Engineering
Israel Vega
2. Abstract
Name: Israel Vega
High School: Immokalee High School
ResearchAdvisor: Dr. Kevin S. Jones, University of Florida, Gainesville
ResearchSite: Department of Materials Science and Engineering, University of Florida,
Gainesville
As time progresses, transistors in integrated circuits continue to have more computing
power to perform faster computations in integrated circuits. According to Moore’s Law, the
number of transistor’s per square inch in integrated circuits doubles every year. For this trend to
continue, semiconductor materials must be improved to fabricate smaller faster transistors. This
is why there is a high interest of using novel materials, specifically N-type InAs grown on Si. N-
type InAs has a higher concentration of free electrons since dopants are introduced to modify its
electrical properties. InAs has a high electron mobility and narrow band gap that allows fast
transfer of electrons to operate signals. InAs and Si both have a diamond cubic crystalline
structure which is ideal, because similar crystal lattices between semiconductors will avoid
crystallographic defects such as vacancies and misalignments in the structure of atoms. Defects
in crystal lattice degrade the performance of the semiconductors conductivity. InAs has a larger
diamond cubic structure than Si which limits its performance to be used in transistors. N-type
MOCVD grown thin films of InAs were annealed at a higher temperature than they were grown
in to observe changes in their structure. Samples of annealed and non-annealed InAs were
analyzed for their electrical properties by using Hall Effect Measurements to determine
conductivity, carrier concentration, electron mobility, and sheet resistance. Plan view TEM
observations were conducted to analyze its microstructure for differences in defect density.
3. Introduction
All of electronic devices are made up of transistors that amplify or block electrical
signals which operate in a binary system of on and off signals (Callister, 2007).With
many networking transistors, signals can be sent, stored and translated into complex
combinations to perform operations on your electronic devices like cell phones and
computers. Transistors are made of semiconductor material which uses both its
conductive and insulating properties to amplify or block electrical signals in devices.
These transistors are fabricated on pure semiconductor wafers, which have too low of a
conductivity to be used as a circuit element in electronics. This pure semiconductor wafer
must then be doped with other elements or compound’s to enhance the wafers electrical
properties.
Figure 1: Silicon doped with Arsenic.
Consider what happens when small amounts of pentavalent elements are
introduced into a pure crystal. In figure 1, Arsenic has five valence electrons whereas Si
4. has four. Thus, it has one electron left unbounded which makes the doped semiconductor
more conductive with excess electrons (Kasap, 2006). Because doping involves different
semiconductors being introduced to each other, crystal structure defects, like vacancies
and misalignments of the atoms, are expected which can degrade the electrical properties
of the semiconductor. Semiconductors have their own arrangement of atoms when they
form into a crystal. Doping can result with the crystal arrangement stressing and straining
to accommodate for the differences in crystal lattices if the selected semiconductors do
not have similar crystal structures. If there are minimal defects and variances from
doping, then the semiconductor has better electrical properties since the semiconductor
has had electron impurities introduced to have more conductivity such as the doped Si in
Figure 1. There is even better performance in devices when the size of their transistors
shrinks to allow more transistors on the device, leading to faster, more powerful circuits.
An observation known as Moore’s Law is a trend that the amount of transistors that can
fit on a circuit has doubled every year. For this trend to continue, semiconductor
materials must be improved for smaller and faster transistors, which is why there is a high
interest in using N-type InAs grown on Si. N-type InAs has high electron mobility and a
narrow band gap to allow faster transfer of electrons. InAs and Si both have a diamond
cubic crystalline structure; however InAs has a larger diamond cubic structure than Si
which limits its performance to be used as a semiconductor since it causes defects in the
crystal structure. In this project, thin films of InAs grown on Si were annealed and
analyzed using Hall Effect Measurements and TEM observation for the effects of
annealing on the InAs’s conductivity, carrier concentration, and electron mobility. The
Hall Effect applies a magnetic field across the sample that pushes carriers in the –y
5. direction, which can be used to measure electrical properties (Haller and McCluskey,
2012).
Methods
Samples of N-Type InAs grown on Si wafer were prepared in 1cm² squares for Hall
Effect Measurement and Plane View TEM observation. A non-annealed sample served as a
control that had MOCVD InAs grown on Si between 300°C and 350°C and was analyzed for its
electrical properties through a Hall Effect Measurement by setting the sample on a four probe
Hall Effect sensor as seen in Figure 1.
Figure 2: A 1cm² InAs Sample is set on a Hall Effect sensor for Hall Effect Analysis.
Each corner was coated with the soft metal Indium to connect contacts with the four
probes. The sensor applied a magnetic field across the corners of the sample that stimulates the
Hall Effect phenomena. It’s important that the contacts on each of the corners are ohmic to
receive an accurate reading from Hall Effect measurement and can be determined by using a
curve tracer. An ohmic contact means an equal amount of current between the probes. These
6. samples need to be coated with an atomic layer deposition of Aluminum Oxide to keep the
Arsenide from evaporating during the annealing process.
Figure 3: Samples are placed 2 feet deep into the furnace at 550°C and annealed under an
Argon purge.
The sample is then annealed in a furnace at 550°C for 10 minutes with Argon purging to
keep the sample from reacting with the atmosphere at this high temperature. The sample is then
left to cool at room temperature. After cooling, the annealed sample is bathed in a buffered oxide
etch with hydrofluoric acid for 10 minutes to remove the Aluminum Oxide coating. The
annealed sample is bathed in water to remove the acid and then dried.
7. Figure 4: Annealed Samples are bathed in Hydrofluoric Acid to remove Aluminum Oxide
layer.
A Hall Effect Measurement is conducted on the annealed sample to analyze conductivity,
carrier concentration, electron mobility, and sheet resistance. Both annealed and non-annealed
samples are prepared for Plane-view TEM analysis. Before using a Focused Ion Beam, the
annealed sample is polished on its ends in order to mill out an even piece of its surface. The
sample is held on a stub and polished with a 30 micron grit at 200 RPM in running water. Nine,
three, one and .25 micron grits are then used to make a smooth finish on the sample.
Figure 5: Samples are polished on micron grits to remove rough edges for Focused Ion
Beam preparation
8. Figure 6: A cross section pattern is milled near the surface of the InAs sample. The milled
surface is then removed using a micro manipulator to be placed on a TEM grid.
Using a Focused Ion Beam, a surface of the InAs layer is milled out that is about
100 Nanometers thick so electrons can pass through the sample to view internal defects
clearly under Transmission Electron Microscopy. The milled surface is pulled out using a
micro manipulator that uses microscopic glass rods to remove the milled surface. The
milled surface is placed onto a TEM grid to be able to observe defect density using TEM
analysis.
10. Image of Annealed Sample
Hall Effect Measurements show that annealed samples have higher sheet resistance and
lower mobility than non-annealed samples. In fact, the average mobility of non-annealed InAs
was -29.633 (cm2/Vs), average sheet number was -2.6E13 (cm-2) and the average sheet
resistance was 8,283.5 (Ohm/cm2). The average mobility of the annealed sample was -
27.4383(cm2/Vs), average sheet number was -3.0945E13 (cm-2) and average sheet resistance
was 13,189.5 (Ohm/cm2). This a 7% decrease of mobility in the annealed sample, 19% increase
in sheet number, and a 59% increase in sheet resistance. The Hall Effect Analysis also shows
miniscule change in the amount of carriers, which suggests annealing at 550°C does not
dramatically deactivate or activate dopants. The decrease in mobility of the annealed sample can
be seen in the TEM images. Strains and defects are still distributed across the annealed sample.
11. Because the annealed sample has a lower mobility than the non-annealed, there must be a higher
defect concentration in the annealed sample than the non-annealed.
Discussion
Annealing is a type of heating treatment that can relieve the stresses and strains in the
crystal lattice of semiconductors. The intense heat diffuses the arrangement of atoms and
rearranges the crystal lattice. This heat treatment alters the electrical properties and can reduce
crystallographic defects in semiconductors. InAs grown on Si has a high interest to be used in
semiconductor material since it has a narrow band gap and high electron mobility. InAs and Si
both have a diamond cubic crystal structure; however InAs has a larger diamond cubic structure
than Si. The difference in size lattices between the InAs and Si limits its electrical properties
because it will cause variances in its structure. The heat treatment given to InAs grown Si did
not improve its electrical properties. There was lower mobility due to more defects in the crystal
lattice and higher sheet resistance. Since InAs has a larger diamond cubic structure than Si, InAs
has to stress and strain to grow onto the small Si crystal lattice. TEM images of the annealing
treatment suggest that the stresses in the InAs were relieved, which caused defects to form as the
crystal lattice diffused and rearranged. Any heat treatment in the fabrication of growing InAs on
Si should be avoided. Heat treatment has a negative effect on the mobility and resistance in thin
20 nanometer InAs grown on Si.
12.
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