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Carbon-based Films as
Piezoresistive Materials
Mariana Amorim Fraga
September 2014
Outline
• Motivation – Why use carbon-based
films as piezoresistive materials?
• Properties of carbon-based films
• Synthesis of carbon-based films
• Application of carbon-based thin
films as sensing materials in
piezoresistive sensors
Motivation
Comparison - Semiconductor properties of silicon and
carbon-based materials (SiC and diamond)
Motivation
Comparison - Mechanical properties of silicon
and carbon-based materials (SiC, DLC and
diamond)
Motivation
Development of eletronic and MEMS
devices for harsh environments
• High temperature;
• High power;
• Atmosphere corrosive;
Properties of carbon-based films
1.Diamond
2. Diamond-like carbon (DLC)
3.Silicon Carbide (SiC)
Diamond – Properties
Diamond Films Synthesis
High pressure and high temperature
* adapted from Bachmann, P. K. 1994. Microwave plasma CVD, and related techniques for low pressure diamond synthesis.
In: Thin Film Diamond. A. Lettington and J. W. Steeds (ed.), London, Chapman and Hall, 31-53.
Diamond Films
DLC - Properties
DLC Films Synthesis
• PECVD (Plasma Enhanced Chemical
Vapor Deposition);
• Magnetron sputtering;
• Pulsed Laser Deposition;
• Filtered Cathodic Arc Deposition;
DLC Films
Silicon Carbide - Properties
SiC Films Synthesis
• PECVD (Plasma Enhanced Chemical
Vapor Deposition);
•CVD (Chemical Vapor Deposition);
• Magnetron sputtering;
• Pulsed Laser Deposition;
SiC Films
Carbon-based materials as sensing materials in
piezoresistive sensors
The gauge factor (GF) of a material is defined as the fractional change of
resistance (ΔR/R) per unit strain ε.
* Single-material MEMS using polycyrstalline diamond by Cao, Zongliang, Ph.D., Michigan State University, 2011.
Carbon-based materials as sensing materials in
piezoresistive sensors
Carbon-based materials as sensing materials in
piezoresistive sensors
Carbon-based materials as sensing materials in
piezoresistive sensors
Carbon-based materials as sensing materials in
piezoresistive sensors
Effect of temperature on piezoresistivity of diamond
• The gauge factors for p-type diamond piezoresistor are
~1000 at room temperature and > 700 at 200°C (Deguchi
et al., 2001);
•Pressure sensor using p-type polycrystalline diamond
piezoresistors exhibits 0.19% of resistance change at
room temperature. This sensitivity decreases for 0.06% at
250 ºC (Yamamoto et al., 2005);
•The gauge factors of polycrystalline diamond films
decreased with increased temperature from room
temperature to 300 °C. However, with higher temperature
up to 500 °C, it increased (Yamamoto et al., 2007).
References
M. A Fraga, H. Furlan, R.S. Pessoa, M. Massi, Wide bandgap semiconductor thin films for piezoelectric
and piezoresistive MEMS sensors applied at high temperatures: an overview. Microsystem
Technologies, 20, p. 9-21, 2014.
M. A. Fraga, H. Furlan, R. S. Pessoa, L. A. Rasia, C. F. R. Mateus, Studies on SiC, DLC and TiO2 thin
films as piezoresistive sensor materials for high temperature application. Microsystem Technologies, 18,
p. 1027-1033, 2012.
M. A Fraga, R.S. Pessoa, M. Massi, H.S. Maciel. Applications of SiC-Based Thin Films in Electronic and
MEMS Devices. In: Yasuto Hijikata. (Org.). Physics and Technology of Silicon Carbide Devices.
1ed.Rijeka: Intech, v. 1, p. 313-336, 2012.
M. A. Fraga, R. S. Pessoa, H. S. Maciel, M. Massi. Recent developments on silicon carbide thin films for
piezoresistive sensors applications. In: Moumita Mukherjee. (Org.). Silicon Carbide. Rijeka: Intech -
Open Acess Publisher, 2011, v. 1, p. 369-388.
A. Yamamoto, N.Norio, T. Takahiro. Evaluation of diamond gauge factor up to 500 °C Diamond &
Related Materials 16, 2007, 1670–1675.
A. Yamamoto, N. Nawachi, T. Tsutsumoto, A.Terayama. Pressure sensor using p-type polycrystalline
diamond piezoresistors Diamond & Related Materials 14, 2005, 657–660.
M.Deguchi, N. Hase, M. Kitabatake, H. Kotera, S. Shima, M. Kitagawa. Piezoresistive property of CVD
diamond films. Diamond and Related Materials 6, 1997, 367-373.

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Talking about Carbon-based films and their use as piezoresistive materials

  • 1. Carbon-based Films as Piezoresistive Materials Mariana Amorim Fraga September 2014
  • 2. Outline • Motivation – Why use carbon-based films as piezoresistive materials? • Properties of carbon-based films • Synthesis of carbon-based films • Application of carbon-based thin films as sensing materials in piezoresistive sensors
  • 3. Motivation Comparison - Semiconductor properties of silicon and carbon-based materials (SiC and diamond)
  • 4. Motivation Comparison - Mechanical properties of silicon and carbon-based materials (SiC, DLC and diamond)
  • 5. Motivation Development of eletronic and MEMS devices for harsh environments • High temperature; • High power; • Atmosphere corrosive;
  • 6. Properties of carbon-based films 1.Diamond 2. Diamond-like carbon (DLC) 3.Silicon Carbide (SiC)
  • 8. Diamond Films Synthesis High pressure and high temperature * adapted from Bachmann, P. K. 1994. Microwave plasma CVD, and related techniques for low pressure diamond synthesis. In: Thin Film Diamond. A. Lettington and J. W. Steeds (ed.), London, Chapman and Hall, 31-53.
  • 11. DLC Films Synthesis • PECVD (Plasma Enhanced Chemical Vapor Deposition); • Magnetron sputtering; • Pulsed Laser Deposition; • Filtered Cathodic Arc Deposition;
  • 13. Silicon Carbide - Properties
  • 14. SiC Films Synthesis • PECVD (Plasma Enhanced Chemical Vapor Deposition); •CVD (Chemical Vapor Deposition); • Magnetron sputtering; • Pulsed Laser Deposition;
  • 16. Carbon-based materials as sensing materials in piezoresistive sensors The gauge factor (GF) of a material is defined as the fractional change of resistance (ΔR/R) per unit strain ε. * Single-material MEMS using polycyrstalline diamond by Cao, Zongliang, Ph.D., Michigan State University, 2011.
  • 17. Carbon-based materials as sensing materials in piezoresistive sensors
  • 18. Carbon-based materials as sensing materials in piezoresistive sensors
  • 19. Carbon-based materials as sensing materials in piezoresistive sensors
  • 20. Carbon-based materials as sensing materials in piezoresistive sensors Effect of temperature on piezoresistivity of diamond • The gauge factors for p-type diamond piezoresistor are ~1000 at room temperature and > 700 at 200°C (Deguchi et al., 2001); •Pressure sensor using p-type polycrystalline diamond piezoresistors exhibits 0.19% of resistance change at room temperature. This sensitivity decreases for 0.06% at 250 ºC (Yamamoto et al., 2005); •The gauge factors of polycrystalline diamond films decreased with increased temperature from room temperature to 300 °C. However, with higher temperature up to 500 °C, it increased (Yamamoto et al., 2007).
  • 21. References M. A Fraga, H. Furlan, R.S. Pessoa, M. Massi, Wide bandgap semiconductor thin films for piezoelectric and piezoresistive MEMS sensors applied at high temperatures: an overview. Microsystem Technologies, 20, p. 9-21, 2014. M. A. Fraga, H. Furlan, R. S. Pessoa, L. A. Rasia, C. F. R. Mateus, Studies on SiC, DLC and TiO2 thin films as piezoresistive sensor materials for high temperature application. Microsystem Technologies, 18, p. 1027-1033, 2012. M. A Fraga, R.S. Pessoa, M. Massi, H.S. Maciel. Applications of SiC-Based Thin Films in Electronic and MEMS Devices. In: Yasuto Hijikata. (Org.). Physics and Technology of Silicon Carbide Devices. 1ed.Rijeka: Intech, v. 1, p. 313-336, 2012. M. A. Fraga, R. S. Pessoa, H. S. Maciel, M. Massi. Recent developments on silicon carbide thin films for piezoresistive sensors applications. In: Moumita Mukherjee. (Org.). Silicon Carbide. Rijeka: Intech - Open Acess Publisher, 2011, v. 1, p. 369-388. A. Yamamoto, N.Norio, T. Takahiro. Evaluation of diamond gauge factor up to 500 °C Diamond & Related Materials 16, 2007, 1670–1675. A. Yamamoto, N. Nawachi, T. Tsutsumoto, A.Terayama. Pressure sensor using p-type polycrystalline diamond piezoresistors Diamond & Related Materials 14, 2005, 657–660. M.Deguchi, N. Hase, M. Kitabatake, H. Kotera, S. Shima, M. Kitagawa. Piezoresistive property of CVD diamond films. Diamond and Related Materials 6, 1997, 367-373.