Comprehensive evaluation of supply voltage underscaling in FPGA on chip memoriesLEGATO project
1) The document discusses aggressive undervolting of FPGAs to improve power efficiency while characterizing its impact on reliability.
2) Experiments were conducted on multiple FPGA platforms to determine safe, critical, and crash voltage ranges and characterize faults in on-chip memories.
3) A neural network implementation on FPGA showed significant power reduction from undervolting until the minimum safe voltage, but the network accuracy exponentially decreased beyond this point due to faults. Fault mitigation techniques were proposed to prevent accuracy loss.
Solution of problems of chapter 2 for simple resistiv circuitsMôstafâ Araby
This document outlines 15 practice problems from Chapter 2 on simple resistive circuits. The problems cover various circuit analysis techniques including Kirchhoff's Current and Voltage Laws, series and parallel resistor combinations, nodal analysis, and power calculations. The goal is to help students learn and practice analyzing circuits to solve for values like current, voltage, power, and equivalent resistance.
This document provides specifications for the KSP13/14 NPN Epitaxial Silicon Darlington transistor including:
1. Absolute maximum and electrical characteristic ratings such as collector-emitter voltage up to 30V and collector current up to 500mA.
2. Typical parameters for characteristics like DC current gain, saturation voltages, and on voltages.
3. Dimensional drawings of the TO-92 package with measurements in millimeters.
FPGAVolt: Low-power FPGA-based DNN Accelerator through Aggressive Undervolting LEGATO project
FPGAVolt exploits the aggressive supply voltage underscaling technique to improve the energy efficiency of FPGA-based NNs. Additionally, FPGAVolt also evaluates and improves the resilience of this accelerator. Through experiments on several representative FPGA fabrics, we observe that until a minimum safe voltage level, i.e., Vmin the NN accuracy is not affected. This safe region involves a large voltage guardband. Also, it involves a narrower voltage region where faults start to appear due to the increased circuit delay, but these faults are masked by NN, and thus, its accuracy is not affected. However, further undervolting causes significant
accuracy loss as a result of the exponentially-increasing high fault rates. Based on the characterization of these undervolting faults, we propose fault mitigation techniques that can effectively improve the resilience behavior of such accelerator. FPGAVolt is implemented on several FPGA platforms and on average, achieves >90% energy saving with a negligible accuracy loss of up to 0.1%.
Original IGBT IRG4BC30FD-S 31A 600V TO-263 New IRAUTHELECTRONIC
This document provides specifications for an insulated gate bipolar transistor (IGBT) with an integrated fast recovery diode. Key specifications include:
- Voltage and current ratings of 600V and 31A continuous collector current
- On-state voltage of 1.59V at 15V gate voltage and 17A collector current
- Fast switching times down to 26ns rise time and 230ns turn-off delay time
- Integrated fast recovery diode with reverse recovery time of 42ns
- Suitable for medium frequency applications from 1-5kHz and resonant modes over 20kHz.
This document provides specifications for the BC546/547/548/549/550 NPN epitaxial silicon transistor made by Fairchild Semiconductor. It includes maximum ratings, electrical characteristics at 25°C, hFE classifications, switching and applications information, typical characteristics graphs, and package dimensions. The transistors can handle collector currents up to 100mA, collector-emitter voltages up to 65V, and junction temperatures up to 150°C. They feature current gains from 110 to 800, saturation voltages from 90-250mV, and current gain bandwidths up to 300MHz. The BC549 and BC550 models have particularly low noise figures.
Original NPN Transistor D880-Y 880 KSD880YTU 3A 60V New FairchildAUTHELECTRONIC
This document provides specifications for the KSD880 NPN epitaxial silicon transistor, including:
1. Absolute maximum ratings and electrical characteristics. Key specs include a collector current of 3A, collector-emitter voltage of 60V, and DC current gain ranging from 20-300.
2. Typical characteristics graphs showing properties like static characteristic curves, DC current gain, and saturation voltage.
3. Package dimensions for the TO-220 package with a diagram identifying the base, collector, and emitter connections.
This document provides specifications for the BC337, BC337-25, and BC337-40 NPN silicon amplifier transistors. It includes maximum ratings, electrical characteristics, ordering information, and package dimensions. The transistors can handle currents up to 800mA and have DC current gains from 100-630 depending on the model. Thermal and electrical performance graphs are provided. The devices come in TO-92 plastic packages and are RoHS-compliant Pb-free.
Comprehensive evaluation of supply voltage underscaling in FPGA on chip memoriesLEGATO project
1) The document discusses aggressive undervolting of FPGAs to improve power efficiency while characterizing its impact on reliability.
2) Experiments were conducted on multiple FPGA platforms to determine safe, critical, and crash voltage ranges and characterize faults in on-chip memories.
3) A neural network implementation on FPGA showed significant power reduction from undervolting until the minimum safe voltage, but the network accuracy exponentially decreased beyond this point due to faults. Fault mitigation techniques were proposed to prevent accuracy loss.
Solution of problems of chapter 2 for simple resistiv circuitsMôstafâ Araby
This document outlines 15 practice problems from Chapter 2 on simple resistive circuits. The problems cover various circuit analysis techniques including Kirchhoff's Current and Voltage Laws, series and parallel resistor combinations, nodal analysis, and power calculations. The goal is to help students learn and practice analyzing circuits to solve for values like current, voltage, power, and equivalent resistance.
This document provides specifications for the KSP13/14 NPN Epitaxial Silicon Darlington transistor including:
1. Absolute maximum and electrical characteristic ratings such as collector-emitter voltage up to 30V and collector current up to 500mA.
2. Typical parameters for characteristics like DC current gain, saturation voltages, and on voltages.
3. Dimensional drawings of the TO-92 package with measurements in millimeters.
FPGAVolt: Low-power FPGA-based DNN Accelerator through Aggressive Undervolting LEGATO project
FPGAVolt exploits the aggressive supply voltage underscaling technique to improve the energy efficiency of FPGA-based NNs. Additionally, FPGAVolt also evaluates and improves the resilience of this accelerator. Through experiments on several representative FPGA fabrics, we observe that until a minimum safe voltage level, i.e., Vmin the NN accuracy is not affected. This safe region involves a large voltage guardband. Also, it involves a narrower voltage region where faults start to appear due to the increased circuit delay, but these faults are masked by NN, and thus, its accuracy is not affected. However, further undervolting causes significant
accuracy loss as a result of the exponentially-increasing high fault rates. Based on the characterization of these undervolting faults, we propose fault mitigation techniques that can effectively improve the resilience behavior of such accelerator. FPGAVolt is implemented on several FPGA platforms and on average, achieves >90% energy saving with a negligible accuracy loss of up to 0.1%.
Original IGBT IRG4BC30FD-S 31A 600V TO-263 New IRAUTHELECTRONIC
This document provides specifications for an insulated gate bipolar transistor (IGBT) with an integrated fast recovery diode. Key specifications include:
- Voltage and current ratings of 600V and 31A continuous collector current
- On-state voltage of 1.59V at 15V gate voltage and 17A collector current
- Fast switching times down to 26ns rise time and 230ns turn-off delay time
- Integrated fast recovery diode with reverse recovery time of 42ns
- Suitable for medium frequency applications from 1-5kHz and resonant modes over 20kHz.
This document provides specifications for the BC546/547/548/549/550 NPN epitaxial silicon transistor made by Fairchild Semiconductor. It includes maximum ratings, electrical characteristics at 25°C, hFE classifications, switching and applications information, typical characteristics graphs, and package dimensions. The transistors can handle collector currents up to 100mA, collector-emitter voltages up to 65V, and junction temperatures up to 150°C. They feature current gains from 110 to 800, saturation voltages from 90-250mV, and current gain bandwidths up to 300MHz. The BC549 and BC550 models have particularly low noise figures.
Original NPN Transistor D880-Y 880 KSD880YTU 3A 60V New FairchildAUTHELECTRONIC
This document provides specifications for the KSD880 NPN epitaxial silicon transistor, including:
1. Absolute maximum ratings and electrical characteristics. Key specs include a collector current of 3A, collector-emitter voltage of 60V, and DC current gain ranging from 20-300.
2. Typical characteristics graphs showing properties like static characteristic curves, DC current gain, and saturation voltage.
3. Package dimensions for the TO-220 package with a diagram identifying the base, collector, and emitter connections.
This document provides specifications for the BC337, BC337-25, and BC337-40 NPN silicon amplifier transistors. It includes maximum ratings, electrical characteristics, ordering information, and package dimensions. The transistors can handle currents up to 800mA and have DC current gains from 100-630 depending on the model. Thermal and electrical performance graphs are provided. The devices come in TO-92 plastic packages and are RoHS-compliant Pb-free.
This document provides specifications for NPN silicon planar epitaxial transistors in the TO-92 plastic package, including the BC546, BC547, and BC548 models. The document lists maximum ratings, thermal characteristics, electrical characteristics at room temperature, small signal characteristics, package dimensions, and packaging/storage information. Key specifications include maximum voltage and current ratings, current gain ranges, saturation voltages, frequency response, and capacitances. Packaging is provided in tape and reel or bulk formats.
Original NPN Transistor KSP10 KSP 10 TO-92 NewAUTHELECTRONIC
This document provides specifications for the KSP10 NPN epitaxial silicon transistor. It includes maximum ratings, electrical characteristics at 25°C, typical characteristics graphs, and package dimensions. The KSP10 is a VHF/UHF transistor in a TO-921 package with a current gain bandwidth of 650 MHz and collector-base feedback capacitance between 0.35-0.65 pF.
This document provides information on NPN silicon transistor types BD135 and BD139, including their marking, description, internal schematic diagram, absolute maximum ratings, thermal data, electrical characteristics, SOT-32 mechanical data, and applications in audio amplifiers and drivers utilizing complementary or quasi-complementary circuits. The complementary PNP types are BD136 and BD140. Key specifications include maximum voltages, currents, power dissipation, gain, and saturation voltage.
IOLTS 2019: Agressive Undervolting of FPGAs: Power and Reliability Trade-offsLEGATO project
In this work, we evaluate aggressive undervolting, i.e., voltage underscaling below the nominal level to reduce the energy consumption of Field Programmable Gate Arrays (FPGAs). Usually, voltage guardbands are added by chip vendors to ensure the worst-case process and environmental scenarios. Through experimenting on several FPGA architectures, we con¿rm a large voltage guardband for several FPGA components, which in turn, delivers signi¿cant power savings. However, further undervolting below the voltage guardband may cause reliability issues as the result of the circuit delay increase, and faults might start to appear. We extensively characterize the behavior of these faults in terms of the rate, location, type, as well as sensitivity to environmental temperature, primarily focusing on FPGA on-chip memories, or Block RAMs (BRAMs). Understanding this behavior can allow to deploy ef¿cient mitigation techniques, and in turn, FPGA-based designs can be improved for better energy, reliability, and performance trade-offs. Finally, as a case study, we evaluate a typical FPGA-based Neural Network (NN) accelerator when the FPGA voltage is underscaled. In consequence, the substantial NN energy savings come with the cost of NN accuracy loss. To attain power savings without NN accuracy loss below the voltage guardband gap, we proposed an application-aware technique and we also, evaluated the built-in Error-Correcting Code (ECC) mechanism. Hence, First, we developed an application-dependent BRAMs placement technique that relies on the deterministic behavior of undervolting faults, and mitigates these faults by mapping the most reliability sensitive NN parameters to BRAM blocks that are relatively more resistant to undervolting faults. Second, as a more general technique, we applied the built-in ECC of BRAMs and observed a signi¿cant fault coverage capability thanks to the behavior of undervolting faults, with a negligible power consumption overhead.
This document provides specifications for the BlueOptics BO55J27660D SFP+ 10G optical transceiver module. It supports data rates up to 10Gbps over distances of 60km on single mode fiber. Key features include a 1270nm laser transmitter, 1330nm receiver, digital diagnostics, and compliance with relevant telecom standards. The document details optical, electrical, mechanical and interface specifications to allow the module to be used in networking equipment.
This document discusses key characteristics and parameters of power MOSFETs:
1) It compares power MOSFETs to bipolar junction transistors, noting advantages of MOSFETs like majority carrier operation, no minority carrier injection, and easier paralleling.
2) It describes the basic structure of an n-channel power MOSFET and some of its parasitic components like JFET and BJT effects.
3) It outlines some key power MOSFET parameters like breakdown voltage, on-resistance, threshold voltage, and transient characteristics like gate charge and dV/dt capability.
Original Transistor NPN TIP41C TIP41 6A 100V TO-220 NewAUTHELECTRONIC
This document provides information on the TIP41C and TIP42C complementary power transistors from STMicroelectronics. It describes the features of the new enhanced series including high switching speed and improved hFE linearity. The transistors are suitable for applications such as audio amplifiers, general purpose circuits, and power linear and switching applications. Electrical characteristics, typical curves, test circuits and packaging information are provided.
This document provides specifications for the BlueOptics BO55J33610D SFP+ 10G optical transceiver module. It supports 10Gbps data rates over single mode fiber up to 10km. The module uses a 1330nm DFB laser transmitter and 1270nm photodetector receiver. It complies with the SFP+ MSA and provides digital diagnostics for operating parameters.
This document provides specifications for the BlueOptics BO55J27640D SFP+ 10G optical transceiver module. It supports data rates up to 10Gbps over single mode fiber with a maximum link length of 40 kilometers. The module complies with relevant industry standards and provides digital diagnostics for real-time monitoring of operating parameters. It is hot-pluggable and operates from a single 3.3V power supply.
This 3 sentence summary provides the key details about the document:
The document provides specifications for the BC548/BC548A/BC548B/BC548C NPN general purpose amplifier transistors. It includes maximum ratings for voltage, current and temperature, as well as thermal and electrical characteristics such as current gain, saturation voltage, and noise figure. The transistors are designed for use as general purpose amplifiers and switches requiring up to 300mA of collector current.
This document summarizes the specifications and characteristics of the BC546/547/548/549/550 NPN epitaxial silicon transistor. It includes maximum ratings, electrical characteristics, typical characteristics like static and transfer characteristics, and package dimensions for the TO-92 package. The transistors can be used for high or low voltage, low noise applications and complement other transistors in the BC556-BC560 range.
This document provides specifications for the BlueOptics BO55J27610D SFP+ 10G optical transceiver module. It supports data rates up to 10Gbps over single mode fiber up to 10km in length. The module uses a 1270nm DFB laser transmitter and 1330nm photodetector receiver. It complies with relevant industry standards and provides digital diagnostics for operating parameters.
This document provides specifications for the BC107, BC108, and BC109 general purpose small signal NPN bipolar transistors. It includes dimensions, maximum ratings, typical electrical characteristics, and thermal resistance for each transistor model in a TO-18 metal package. Key specifications listed are an ambient operating temperature range of -65 to +175°C, continuous collector current of 100mA, transition frequency above 150MHz, and thermal resistance of 500°C/W.
This document provides information about a SFP+ optical transceiver module that operates at 10Gbps up to a distance of 10km on single mode fiber. Key details include:
- It operates in the 1270-1450nm wavelength range and supports 10G Ethernet and 10GBase applications.
- The transceiver module complies with SFP+ MSA standards and contains a laser transmitter, photodiode receiver, and digital diagnostic monitoring functions.
- It provides 10Gbps data rates with transmission distances up to 10km on single mode fiber. Operating temperature ranges are also specified.
Original Transistor NPN 2SD669AL D669ACLD669 120V 1.5A TO-126 New JIANGSU CHA...AUTHELECTRONIC
This document provides specifications for a 2SD669AL NPN transistor. It lists maximum ratings for electrical characteristics like breakdown voltages and cut-off currents. It also provides typical values for parameters such as DC current gain, saturation voltages, and output capacitance at different operating conditions. Curves in the bottom section show characteristics like collector current and saturation voltages as functions of temperature and collector-emitter voltage.
This document provides specifications for the BC556/557/558/559/560 series of PNP epitaxial silicon transistors. It lists the absolute maximum ratings and electrical characteristics such as collector-emitter voltage, collector current, and DC current gain for different transistor types. The transistors can be used for switching and amplification applications and come in a TO-92 package.
This document contains information about homework and lab assignments for multiple weeks of an ECET 402 control systems course. It includes:
1) Homework assignments for weeks 1 through 6 covering topics like temperature sensors, feedback control systems, and open/closed loop control.
2) Lab assignments for weeks 1 through 7 involving circuits for temperature measurement, alarm systems, stepper motors, and determining system stability through root locus analysis.
3) Links to an online tutorial site for additional course materials and resources.
This document contains information about homework and lab assignments for multiple weeks of an ECET 402 control systems course. It includes:
1) Homework assignments for weeks 1 through 6 covering topics like temperature sensors, control systems modeling, and communications networks.
2) Lab assignments for weeks 1 through 7 involving circuits with sensors, alarms, motors, and modeling control systems in MATLAB.
3) Information on how to access additional course materials and homework solutions by visiting an online tutorial site.
Ecet 402 Enthusiastic Study / snaptutorial.comStephenson34
This document contains information about homework and lab assignments for multiple weeks of an ECET 402 control systems course. It includes:
1) Homework assignments for weeks 1 through 6 covering topics like temperature sensors, feedback control systems, and open/closed loop control.
2) Lab assignments for weeks 1 through 7 involving circuits for temperature measurement, alarm systems, stepper motors, and determining system stability through root locus analysis.
3) Links to an online tutorial site for additional course materials and resources.
1. (TCO 4) For the series-parallel circuit given in Figure 3.1 below, determine the total resistance RT between the terminals labeled A and B
2. (TCO 4) For the circuit given in Figure 3.3, obtain the following quantities.
a) Currents I1 and I2
b) Power dissipated by the resistor R3
3. (TCOs 2,3,4) Determine the unknown quantities I1, V2, and V3
Design and simulation of high frequency colpitts oscillator based on BJT ampl...IJECEIAES
Frequency oscillator is one of the basic devices that can be used in most electrical, electronics and communications circuits and systems. There are many types of oscillators depending on frequency range used in an application such as audio, radio and microwave. The needed was appeared to use high and very high frequencies to make the rapid development of advanced technology Colpitts oscillator is one of the most common types of oscillator, it can be used for radio frequency (RF), that its output signal is often utilized at the basic of a wireless communication system in most application. In this research, a Colpitts oscillator is comprised from a bipolar junction transistor (BJT) amplifier with LC tank. This design is carrying out with a known Barkhausen criterion for oscillation. Firstly, is carried out using theoretical calculation. The secondary is carried out using simulation (Multisim 13). All the obtained result from the above two approaches are 10 MHz and 9.745 MHz respectively. This result is seen to be very encouraging.
This document provides specifications for NPN silicon planar epitaxial transistors in the TO-92 plastic package, including the BC546, BC547, and BC548 models. The document lists maximum ratings, thermal characteristics, electrical characteristics at room temperature, small signal characteristics, package dimensions, and packaging/storage information. Key specifications include maximum voltage and current ratings, current gain ranges, saturation voltages, frequency response, and capacitances. Packaging is provided in tape and reel or bulk formats.
Original NPN Transistor KSP10 KSP 10 TO-92 NewAUTHELECTRONIC
This document provides specifications for the KSP10 NPN epitaxial silicon transistor. It includes maximum ratings, electrical characteristics at 25°C, typical characteristics graphs, and package dimensions. The KSP10 is a VHF/UHF transistor in a TO-921 package with a current gain bandwidth of 650 MHz and collector-base feedback capacitance between 0.35-0.65 pF.
This document provides information on NPN silicon transistor types BD135 and BD139, including their marking, description, internal schematic diagram, absolute maximum ratings, thermal data, electrical characteristics, SOT-32 mechanical data, and applications in audio amplifiers and drivers utilizing complementary or quasi-complementary circuits. The complementary PNP types are BD136 and BD140. Key specifications include maximum voltages, currents, power dissipation, gain, and saturation voltage.
IOLTS 2019: Agressive Undervolting of FPGAs: Power and Reliability Trade-offsLEGATO project
In this work, we evaluate aggressive undervolting, i.e., voltage underscaling below the nominal level to reduce the energy consumption of Field Programmable Gate Arrays (FPGAs). Usually, voltage guardbands are added by chip vendors to ensure the worst-case process and environmental scenarios. Through experimenting on several FPGA architectures, we con¿rm a large voltage guardband for several FPGA components, which in turn, delivers signi¿cant power savings. However, further undervolting below the voltage guardband may cause reliability issues as the result of the circuit delay increase, and faults might start to appear. We extensively characterize the behavior of these faults in terms of the rate, location, type, as well as sensitivity to environmental temperature, primarily focusing on FPGA on-chip memories, or Block RAMs (BRAMs). Understanding this behavior can allow to deploy ef¿cient mitigation techniques, and in turn, FPGA-based designs can be improved for better energy, reliability, and performance trade-offs. Finally, as a case study, we evaluate a typical FPGA-based Neural Network (NN) accelerator when the FPGA voltage is underscaled. In consequence, the substantial NN energy savings come with the cost of NN accuracy loss. To attain power savings without NN accuracy loss below the voltage guardband gap, we proposed an application-aware technique and we also, evaluated the built-in Error-Correcting Code (ECC) mechanism. Hence, First, we developed an application-dependent BRAMs placement technique that relies on the deterministic behavior of undervolting faults, and mitigates these faults by mapping the most reliability sensitive NN parameters to BRAM blocks that are relatively more resistant to undervolting faults. Second, as a more general technique, we applied the built-in ECC of BRAMs and observed a signi¿cant fault coverage capability thanks to the behavior of undervolting faults, with a negligible power consumption overhead.
This document provides specifications for the BlueOptics BO55J27660D SFP+ 10G optical transceiver module. It supports data rates up to 10Gbps over distances of 60km on single mode fiber. Key features include a 1270nm laser transmitter, 1330nm receiver, digital diagnostics, and compliance with relevant telecom standards. The document details optical, electrical, mechanical and interface specifications to allow the module to be used in networking equipment.
This document discusses key characteristics and parameters of power MOSFETs:
1) It compares power MOSFETs to bipolar junction transistors, noting advantages of MOSFETs like majority carrier operation, no minority carrier injection, and easier paralleling.
2) It describes the basic structure of an n-channel power MOSFET and some of its parasitic components like JFET and BJT effects.
3) It outlines some key power MOSFET parameters like breakdown voltage, on-resistance, threshold voltage, and transient characteristics like gate charge and dV/dt capability.
Original Transistor NPN TIP41C TIP41 6A 100V TO-220 NewAUTHELECTRONIC
This document provides information on the TIP41C and TIP42C complementary power transistors from STMicroelectronics. It describes the features of the new enhanced series including high switching speed and improved hFE linearity. The transistors are suitable for applications such as audio amplifiers, general purpose circuits, and power linear and switching applications. Electrical characteristics, typical curves, test circuits and packaging information are provided.
This document provides specifications for the BlueOptics BO55J33610D SFP+ 10G optical transceiver module. It supports 10Gbps data rates over single mode fiber up to 10km. The module uses a 1330nm DFB laser transmitter and 1270nm photodetector receiver. It complies with the SFP+ MSA and provides digital diagnostics for operating parameters.
This document provides specifications for the BlueOptics BO55J27640D SFP+ 10G optical transceiver module. It supports data rates up to 10Gbps over single mode fiber with a maximum link length of 40 kilometers. The module complies with relevant industry standards and provides digital diagnostics for real-time monitoring of operating parameters. It is hot-pluggable and operates from a single 3.3V power supply.
This 3 sentence summary provides the key details about the document:
The document provides specifications for the BC548/BC548A/BC548B/BC548C NPN general purpose amplifier transistors. It includes maximum ratings for voltage, current and temperature, as well as thermal and electrical characteristics such as current gain, saturation voltage, and noise figure. The transistors are designed for use as general purpose amplifiers and switches requiring up to 300mA of collector current.
This document summarizes the specifications and characteristics of the BC546/547/548/549/550 NPN epitaxial silicon transistor. It includes maximum ratings, electrical characteristics, typical characteristics like static and transfer characteristics, and package dimensions for the TO-92 package. The transistors can be used for high or low voltage, low noise applications and complement other transistors in the BC556-BC560 range.
This document provides specifications for the BlueOptics BO55J27610D SFP+ 10G optical transceiver module. It supports data rates up to 10Gbps over single mode fiber up to 10km in length. The module uses a 1270nm DFB laser transmitter and 1330nm photodetector receiver. It complies with relevant industry standards and provides digital diagnostics for operating parameters.
This document provides specifications for the BC107, BC108, and BC109 general purpose small signal NPN bipolar transistors. It includes dimensions, maximum ratings, typical electrical characteristics, and thermal resistance for each transistor model in a TO-18 metal package. Key specifications listed are an ambient operating temperature range of -65 to +175°C, continuous collector current of 100mA, transition frequency above 150MHz, and thermal resistance of 500°C/W.
This document provides information about a SFP+ optical transceiver module that operates at 10Gbps up to a distance of 10km on single mode fiber. Key details include:
- It operates in the 1270-1450nm wavelength range and supports 10G Ethernet and 10GBase applications.
- The transceiver module complies with SFP+ MSA standards and contains a laser transmitter, photodiode receiver, and digital diagnostic monitoring functions.
- It provides 10Gbps data rates with transmission distances up to 10km on single mode fiber. Operating temperature ranges are also specified.
Original Transistor NPN 2SD669AL D669ACLD669 120V 1.5A TO-126 New JIANGSU CHA...AUTHELECTRONIC
This document provides specifications for a 2SD669AL NPN transistor. It lists maximum ratings for electrical characteristics like breakdown voltages and cut-off currents. It also provides typical values for parameters such as DC current gain, saturation voltages, and output capacitance at different operating conditions. Curves in the bottom section show characteristics like collector current and saturation voltages as functions of temperature and collector-emitter voltage.
This document provides specifications for the BC556/557/558/559/560 series of PNP epitaxial silicon transistors. It lists the absolute maximum ratings and electrical characteristics such as collector-emitter voltage, collector current, and DC current gain for different transistor types. The transistors can be used for switching and amplification applications and come in a TO-92 package.
This document contains information about homework and lab assignments for multiple weeks of an ECET 402 control systems course. It includes:
1) Homework assignments for weeks 1 through 6 covering topics like temperature sensors, feedback control systems, and open/closed loop control.
2) Lab assignments for weeks 1 through 7 involving circuits for temperature measurement, alarm systems, stepper motors, and determining system stability through root locus analysis.
3) Links to an online tutorial site for additional course materials and resources.
This document contains information about homework and lab assignments for multiple weeks of an ECET 402 control systems course. It includes:
1) Homework assignments for weeks 1 through 6 covering topics like temperature sensors, control systems modeling, and communications networks.
2) Lab assignments for weeks 1 through 7 involving circuits with sensors, alarms, motors, and modeling control systems in MATLAB.
3) Information on how to access additional course materials and homework solutions by visiting an online tutorial site.
Ecet 402 Enthusiastic Study / snaptutorial.comStephenson34
This document contains information about homework and lab assignments for multiple weeks of an ECET 402 control systems course. It includes:
1) Homework assignments for weeks 1 through 6 covering topics like temperature sensors, feedback control systems, and open/closed loop control.
2) Lab assignments for weeks 1 through 7 involving circuits for temperature measurement, alarm systems, stepper motors, and determining system stability through root locus analysis.
3) Links to an online tutorial site for additional course materials and resources.
1. (TCO 4) For the series-parallel circuit given in Figure 3.1 below, determine the total resistance RT between the terminals labeled A and B
2. (TCO 4) For the circuit given in Figure 3.3, obtain the following quantities.
a) Currents I1 and I2
b) Power dissipated by the resistor R3
3. (TCOs 2,3,4) Determine the unknown quantities I1, V2, and V3
Design and simulation of high frequency colpitts oscillator based on BJT ampl...IJECEIAES
Frequency oscillator is one of the basic devices that can be used in most electrical, electronics and communications circuits and systems. There are many types of oscillators depending on frequency range used in an application such as audio, radio and microwave. The needed was appeared to use high and very high frequencies to make the rapid development of advanced technology Colpitts oscillator is one of the most common types of oscillator, it can be used for radio frequency (RF), that its output signal is often utilized at the basic of a wireless communication system in most application. In this research, a Colpitts oscillator is comprised from a bipolar junction transistor (BJT) amplifier with LC tank. This design is carrying out with a known Barkhausen criterion for oscillation. Firstly, is carried out using theoretical calculation. The secondary is carried out using simulation (Multisim 13). All the obtained result from the above two approaches are 10 MHz and 9.745 MHz respectively. This result is seen to be very encouraging.
IRJET- Design and Analysis of Current Starved and Differential Pair VCO for L...IRJET Journal
This document compares the design and analysis of a current starved voltage controlled oscillator (CSVCO) and differential pair voltage controlled oscillator (DAVCO) for low power phase locked loop applications using 180nm CMOS technology. Both circuits were designed and simulated using SPICE simulation software. The CSVCO operates from 0.5V to 1V control voltage and has an average power dissipation of 42 microwatts, while the DAVCO operates from 0.5V to 1.3V control voltage and has an average power dissipation of 1.42 milliwatts. The DAVCO has a higher frequency gain and tuning range but higher power consumption compared to the CSVCO, making the CSVCO more suitable for low power applications
This document describes the theory and experimental procedure of a single stage BJT amplifier. It discusses the three common configurations of BJT amplifiers: common emitter, common base, and common collector. The experiment aims to differentiate the configurations, measure DC and AC parameters, and observe the voltage gain differences between common emitter and common collector circuits. Key results showed the common emitter configuration amplified the signal as expected, while the common collector configuration did not amplify and had a voltage gain close to unity.
IRJET- Design and Analysis of Single Ended Primary Inductance Converter (SEPI...IRJET Journal
This document describes the design and analysis of a single-ended primary inductance converter (SEPIC) for battery-powered devices using MATLAB simulation. A SEPIC converter can both boost and buck voltages from the battery, providing a steady output voltage as the battery discharges. The document discusses SEPIC converter topology, duty cycle considerations, inductor selection, and simulates a SEPIC converter in MATLAB. The simulation shows the SEPIC converter providing a regulated 15.32V output from a 20V input with 76.6% efficiency.
Switched Inductor Based Buck-Boost Transformerless InverterIRJET Journal
This document presents a switched inductor based buck-boost transformerless inverter topology for connecting photovoltaic systems to the electric grid. The topology uses five switches and has the advantages of buck-boost capability, low leakage current due to a shared terminal between the grid and input, high gain from the switched inductor concept, and lower switching losses as two switches operate at line frequency. The topology and its four modes of operation are described. Simulation results show the input and output voltages and currents meet expectations. Hardware implementation using a dSPACE controller verifies the expected output voltage is achieved. The topology offers improvements over other transformerless inverters and is suitable for applications like photovoltaics and microgrids.
Design procedures of bipolar low noise amplifier at radio frequency using s p...mohamed albanna
This document describes the design procedures for an RF bipolar low noise amplifier using S-parameters. It involves selecting a transistor, determining the DC bias point, checking for stability, and designing the input and output matching networks. The procedures are demonstrated through the design of an amplifier using an Infineon BFP640 transistor. Key steps include choosing the transistor based on specifications, examining its data sheet parameters, simulating the DC transfer characteristics to determine the bias point, and considering biasing for gain and noise performance.
International Journal of Engineering Research and Applications (IJERA) is an open access online peer reviewed international journal that publishes research and review articles in the fields of Computer Science, Neural Networks, Electrical Engineering, Software Engineering, Information Technology, Mechanical Engineering, Chemical Engineering, Plastic Engineering, Food Technology, Textile Engineering, Nano Technology & science, Power Electronics, Electronics & Communication Engineering, Computational mathematics, Image processing, Civil Engineering, Structural Engineering, Environmental Engineering, VLSI Testing & Low Power VLSI Design etc.
Selection of Passive Component for Cockroft Walton Voltage Multiplier: A Low ...IRJET Journal
This document summarizes a research paper on selecting passive components for a Cockroft-Walton voltage multiplier circuit to generate high voltages for educational laboratories. It describes criteria for selecting the number of stages, capacitors, and diodes in the circuit based on the required output voltage and allowable ripple. Simulation results show the effect of these selections on ripple voltage at different stages. The selection approach aims to minimize ripple at the final stage by reducing it at earlier stages, requiring non-equal capacitor values. This circuit can generate up to 100kV for laboratory experiments in a low-cost manner.
This document provides instructions for students taking an Electrical and Electronics Engineering laboratory course on Power Electronics and Drives. It begins with general safety instructions for all EEE lab courses, such as being punctual and wearing proper attire. Next, it lists 13 experiments to be performed in the course, covering topics like gate pulse generation, characteristics of power electronic devices, and converter circuits. Finally, it provides details on the experiments, including circuit diagrams, procedures, expected waveforms, and requirements for recording observations and results. The document aims to prepare students for experiments examining key concepts in power electronics and motor drives.
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This document describes the simulation of a low-cost 50Hz pulse generator circuit using a 555 timer IC, resistors, capacitors, and potentiometer. The circuit is designed to operate in astable mode to generate a continuous train of pulses at 50Hz. By varying the potentiometer, the frequency can be adjusted, as shown in a chart ranging from 50Hz to 133Hz. The pulse generator could find applications where controlled pulse signals are needed, such as in electrical machine laboratories or industrial equipment. The simulation was performed using Proteus software and the theoretical calculations confirm the circuit generates pulses at 50Hz as intended.
Comparative Analysis of Linear Controllers used for Grid Connected PV System IJECEIAES
Requirement for electrical energy is increasing in a ramp function manner. To meet the steady increasing in energy demand it is required to find some alternate source of energy. Except the conventional source of energy one type of renewable energy i.e PV may be regarded as a clean source of energy to meet the energy demand. PV modules generating DC power cannot be directly connected to the electrical infrastructure as most of the grid infrastructure uses either 230volt or 120 volt. Therefore power electronic device most be connected (inverter) between PV and grid. In order to make a competitive market between the renewable generated power and conventional way of generating the power it is required to design a cost effective inverter, qualitative output which is pure sinusoidal and harmonics free. In this paper a comparative analysis among the various linear controllers are presented. Proposed Optimised PID Controller is Presented through MATLAB Simulink based environment.
IRJET- Improved Transformerless Inverter with Common Mode Leakage Current Eli...IRJET Journal
This document describes an improved transformerless inverter that can be used in photovoltaic grid-connected power systems to eliminate common mode leakage currents. It proposes using additional switches and either unipolar or double frequency sinusoidal pulse width modulation to generate a three-level output from the inverter. Simulation results show reductions in total harmonic distortion of the grid current compared to standard designs. A prototype was also built using the double frequency control scheme to validate the approach experimentally.
The document provides instructions for experiments on power electronics laboratory equipment. It includes circuits and procedures to study the characteristics of SCR, MOSFET, IGBT using different firing circuits like R, RC and UJT. The objectives are to draw the output and transfer characteristics of these devices, determine threshold voltages and understand the operation of different firing circuits. Graphs are plotted from the observations and results are analyzed to understand the concepts of latching current, pinch-off voltage and voltage/current control of the devices.
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1. ECET 220 Week 1 Homework
For more classes visit
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Chapter# 3: 2, 8, 14, 22, and 34 (pp. 158–160)
Chapter# 4:2, 4, and 14 (pp. 233–236)
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ECET 220 Week 1 iLab Analysis of BJT
Characteristics comprisingof BJT Biasing using
Simulation and Actual Construction
For more classes visit
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2. Objectives:
To analyze a normally biased BJT circuit comprising of a BJT and
resistors and measure the circuit voltages between emitter, common,
base, and collector.
To theoretically calculate and verify the circuit using Ohm’s law or
Kirchhoff’s law, which were learned in previous classes.
Determine the voltage drop across the collector load resistance and
measure the current passing through emitter and collector resistors.
Determine if the collector-based junction is forward or reversed biased.
Questions:
What is the total resistance between the base and +Vcc?
Is the base-to-emitter voltage close to 0.7 V?
Is the collector-to-emitter voltage less than Vcc?
Is the collector-to-emitter voltage greater than 0.3 V?
How much current must be passing through the emitter resistor in mA?
What is the voltage drop across the collector load resistance (VRC) in
V?
What is the collector current in mA? Approximately.
By removing R4 and therefore changing the value of the base-to-VCC
Has it changed the collector-to-emitter voltage? How?
By removing R4 and therefore changing the value of the base-to-VCC
Has it changed the collector current? How?
3. By removing R4 and therefore changing the value of the base-to-VCC
Has it changed the base-to-emitter voltage? By how much?
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ECET 220 Week 2 Homework
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Chapter 5: Problems 1, 7, 8, and 12
5.1 a. What is the expected amplification of a BJT transistor amplifier if
the dc supply is set to zero volts? 0
What will happen to the output ac signal if the dc level is insufficient?
Sketch the effect on the waveform. It will be clipped
What is the conversion efficiency of an amplifier in which the effective
value of the current through a 2.2-kΩ load is 5 mA and the drain on the
18-V dc supply is 3.8 mA? 80
4. 5.7 Using the model of Fig. 16, determine the following for a common-
emitter amplifier if β = 80, IE (dc) = 2 mA, and r0 = 40 kΩ.
5.8 The input impedance to a common-emitter transistor amplifier is 1.2
kΩ with β = 140, ro = 50 kΩ, and RL= 2.7 kΩ. Determine:
5.12 For the network of Fig. 153:
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ECET 220 Week 2 iLab Analysis of BJT
Amplifier Classes of Operation using Simulation
and Actual Construction
For more classes visit
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Objectives:
5. To analyze a BJT Amplifier Classes Amplifier comprising of two
capacitors (C) and resistors (R) and measure voltage drops and currents
at different locations.
To theoretically calculate and verify the circuit using Ohm’s law and
Kirchhoff’s law, which were learned in previous courses.
Determine the voltages (VE, VC, VB) with respect to the circuit
common. Measure and verify the same using the simulation.
Determine if the output voltage is in-phase or out-of-phase with its input
waveform.
Did your theoretical calculations closely match the results obtained from
the Multisim simulation? (Yes, No)
Did your theoretical calculations closely match the results obtained from
the Proto Board circuit? (Yes, No)
Did your results obtained from the Multisim simulation closely match
the results obtained from the Proto Board circuit? (Yes, No)
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6. ECET 220 Week 3 Homework
For more classes visit
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# 2 (e book, Qn.# 2, pg.# 416 & Hard Cover Ed., Qn.# 2, pg.# 418)
Using the characteristics of Fig. 11, determine ID for the following
levels of VGS(with VDS > VP):
# 6 (e Book, pg.# 416-417)Hard Cover Ed. Prob.# 7, pg.# 419
a. Describe in your own words why IG is effectively 0 A for a JFET
transistor.
b. Why is the input impedance to a JFET so high?
c. Why is the terminology field effect appropriate for this important
three-terminal device?
# 16 (e book, pg.# 418) Hard Cover Ed., Qn.# 18, pg.# 420
Define the region of operation for the 2N5457 JFET of Fig. 22 using the
range of IDSS and VP provided. That is, sketch the transfer curve
defined by the maximum IDSS and VP and the transfer curve for the
minimum IDSS and VP. Then, shade in the resulting area between the
two curves.
# 17 (E book, Qn.# 17, pg.# 418) & hard cover Ed., Qn.# 20, pg.# 428.
The numbers given are different and they are 30 V & 100 mW
7. Chapter 7
# 1 Fixed-Bias Configuration
For the fixed-bias configuration of Fig. 80:
Sketch the transfer characteristics of the device.
Superimpose the network equation on the same graph.
Determine and IDQ and VDSQ
Using Shockley’s equation, solve for and then find IDQ and VDSQ.
Compare with the solutions of part (c).
# 2 (e book, Pg.# 476)
# 6 (e book, pg.# 477) Hard cover Ed., Prob.# 7, pg.# 474
For the self-bias configuration of Fig. 85:
Sketch the transfer curve for the device.
Superimpose the network equation on the same graph.
Determine and ID Q & VGS Q
Calculate VDS, VD, VG, and VS.
# 11
Chapter 8
# 3 For a JFET having device parameters gm0 = 5 mS and VP = −3.5 V,
what is the device current at VGS = 0 V?
(Ebook, Pg.# 541)
# 12 Using the drain characteristic of Fig. 72:
8. a. What is the value of rd for VGS = 0 V?
b. What is the value of gm0 at VDS = 10 V?
# 17 Determine Zi, Zo, and AV for the network of Fig. 73 if IDSS = 10
mA, VP = −4 V, and rd = 40 kΩ.
# 23. Determine Zi, Zo, and Vo for the network of Fig. 76 if V = 20
mV.
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ECET 220 Week 3 iLab Analysis of JFET
Characteristics and Amplifiers
For more classes visit
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Objectives:
9. To calculate and verify the common-source JFET Amplifier circuit of
Figure 1. Determine the voltages (VS, VG, VD) with respect to the
circuit common. Simulate and measure the circuit using Multisim 11
software. Construct the circuit using a prototyping board and necessary
components. Measure the key voltages of the constructed circuit with a
digital multi-meter and the AC input signal and its amplified output
signal using an oscilloscope. Determine the phase difference from input
to output and calculate the voltage gain.
Did your theoretical calculations closely match the results obtained from
the Multisim simulation?
Did your theoretical calculations closely match the results obtained from
the Proto Board circuit?
Did your results obtained from the Multisim simulation closely match
the results obtained from the Proto Board circuit?
****************************************************
ECET 220 Week 4 Homework
For more classes visit
10. www.snaptutorial.com
Chapter 10 Questions 1, 2, 4, 5, 6, 9, 12.
What is the output voltage in the circuit of Fig. 62.
What is the range of the voltage-gain adjustment in the circuit of Fig. 63.
What is the range of the output voltage in the circuit of Fig. 65 if the
input can vary from 0.1 to 0.5 V?
What output voltage results in the circuit of Fig. 66 for an input of V1=
−0.3 V?
What input must be applied to the input of Fig. 66 to result in an output
of 2.4 V?
Calculate the output voltage of the circuit in Fig. 68 for Rf = 68 kΩ.
Calculate the output voltage for the circuit of Fig. 71.
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ECET 220 Week 4 iLab Inverting and Non-
Inverting Op Amp Circuits
11. For more classes visit
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Objectives: To analyze the characteristics of the inverting and non-
inverting Operational Amplifier.
To calculate gain as well as expected output voltages in accordance with
the input voltages.
To design a simulation as well as construct the proto board to test and
analyze all theories.
Results: The results matched well with expected calculation until the
Op-amp reached 14.9v. I am sure this is something I overlooked in my
homework.
1. Design an amplifier with a gain of -2 using Multisim. Copy and paste
your circuit below
2. Design an amplifier with a gain of 2 using Multisim. Copy and paste
your circuit below:
3. What is the phase shift between the input and output signals of an
inverting op amp?
4. What is the phase shift between the input and output signals of a non-
inverting op amp?
12. ****************************************************
ECET 220 Week 5 Homework
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Chapter 10
8. Calculate the output voltage developed by the circuit of Fig.68 for
Rf= 330kΩ.
13. Calculate the output voltages V2 and V3 in circuit Fig.72
16. Calculate the total offset voltage for the circuit Fig.75 for an op-amp
with specified values of input offset voltage Vio= 6mV and input offset
current Iio= 120nA.
24. Determine the output voltage of an op-amp for input voltages
Vi1=220µV and Vi2=140µV. The amplifier has a differential gain of
Ad= 6000 and value of CMRR is: (a) 200 (b) 105.
13. 29. Use schematic capture or MultiSim to calculate the output voltage in
circuit Fig.73. Vo=-1.875V
Chapter 11
2. Calculate the output voltage of the circuit Fig.48 for an input of
150mV rms.
3. Calculate the output voltage in circuit Fig.49.
8. Determine the output voltage for the circuit Fig.52.
****************************************************
ECET 220 Week 5 iLab Summing Amplifier
(Inverting and Non-Inverting) and
Instrumentation Amplifier
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14. Objectives:
Demonstrate the operation of a summing amplifier inverting, non-
inverting using theoretical calculations and constructed circuits. Also
demonstrate the operation of an instrumentation amplifier using
theoretical calculations and constructed circuits.
Results:
During the results between theoretical and constructed both performed
as expected and the outputs were surprisingly close.
Conclusions:
Sing the op-amps to combine values or signals can be predicted through
calculations or circuit simulation. Depending tolerance values of the
resistors being used you results will all be within 5% or closer in most
cases.
****************************************************
ECET 220 Week 6 Homework
For more classes visit
15. www.snaptutorial.com
Ch. 10
10. Sketch the output waveform resulting in Fig. 69.
Ch. 11
2. Calculate the output voltage of the circuit of Fig. 48 for an input of
150 mV rms
5. Show the connection of two op-amp stages using an LM358 IC to
provide outputs that are 15 and—30 times larger than the input. Use a
feedback resistor, RF = 150 kΩ, in all stages
6. Calculate the output voltage for the circuit of Fig. 50 with inputs of
V1 = 40 mV rms and V2 = 20 mV rms.
7. Determine the output voltage for the circuit of Fig. 51.
14. Calculate Vo in the circuit of Fig. 56.
****************************************************
ECET 220 Week 6 iLab Differentiator and
Integrator Circuits
16. For more classes visit
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Objectives:
To demonstrate the operation of a differentiator
To demonstrate the operation of an integrator
Design a practical differentiator circuit similar to what is shown in
Figure 2 for a frequency range of 1 kHz to 10 kHz using the formulas
provided in the PRE-LAB.
Use C = 0.0047 μF.
Design a practical integrator circuit similar to what is shown in Figure 4
for a frequency range of 1 kHz to 10 kHz using the formulas provided in
the PRE-LAB.
Use C = 0.01 μF
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ECET 220 Week 7 Homework
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Chapter 13: Linear-Digital ICs
Problems 1, 2, 4, 9, and 10
Draw the diagram of a 741 op-amp operated from ±15-V supplies with
Vi(−) = 0 V and Vi(+) = +5 V. Include terminal pin connections.
Sketch the output waveform for the circuit of Fig. 40.
Draw the resulting output waveform for the circuit of Fig. 41.
Sketch a five-stage ladder network using 15-kΩ and 30-kΩ resistors.
For a reference voltage of 16 V, calculate the output voltage for an input
of 11010 to the circuit of Problem 8.
What voltage resolution is possible using a 12-stage ladder network with
a 10-V reference voltage?
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ECET 220 Week 7 iLab Differential (Difference)
Amplifier and Audio Amplifier
18. For more classes visit
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Objectives:
Construct and take measurements of a Differential (Difference)
Amplifier.
Construct and take measurements of an audio amplifier.
Results:
The measurements of the Vout of the constructed differential amplifiers
yielded comparable result to the theoretical calculations. In each of the
three configurations of VA and VB, the actual output was less than 1%
margin of error from the theoretical calculations.
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