IJRET : International Journal of Research in Engineering and Technology is an international peer reviewed, online journal published by eSAT Publishing House for the enhancement of research in various disciplines of Engineering and Technology. The aim and scope of the journal is to provide an academic medium and an important reference for the advancement and dissemination of research results that support high-level learning, teaching and research in the fields of Engineering and Technology. We bring together Scientists, Academician, Field Engineers, Scholars and Students of related fields of Engineering and Technology
Performance comparison of selection nanoparticles for insulation of three cor...IJECEIAES
This paper presents an investigation on the enhancement of electrical insulations of power cables materials using a new multi-nanoparticles technique. It has been studied the effect of adding specified types and concentrations of nanoparticles to polymeric materials such as PVC for controlling on electric and dielectric performance. Prediction of effective dielectric constant has been done for the new nanocomposites based on Interphase Power Law (IPL) model. The multi-nanoparticles technique has been succeeded for enhancing electric and dielectric performance of power cables insulation compared with adding individual nanoparticles. Finally, it has been investigated on electric field distribution in the new proposed modern insulations for three-phase core belted power cables. This research has focused on studying development of PVC nanocomposite materials performance with electric field distribution superior to the unfilled matrix, and has stressed particularly the effect of filler volume fraction on the electric field distribution.
Mutual Coupling Reduction in Antenna Using EBG on Double SubstrateTELKOMNIKA JOURNAL
Malaysia
*Corresponding author, e-mail: raimidewan@gmail.com
Abstract
In this paper, a mutual coupling study is conducted between two-element array
antenna on dual substrate. A single patch antenna is firstly designed on dual substrate layer to
testify appropriate performance at 2.45 GHz. Subsequently, an array of two element patches on
dual substrate are constructed with one of them is incorporated with three EBG unit cell on the
bottom substrate. The radiating patch is on the top substrate, while the EBG unit cell is on the
bottom substrate. With EBGs in separate layers from the antenna array, the antenna elements
are closely separated by a distance of 22 mm with a significant reduced mutual coupling of -
26.61 dB. This corresponds to a distance reduction of 34.68%. The proposed structure
implemented only three EBG unit cells. Apart from that, the study of overlapped case of EBG
with the antenna is also presented.
Reduction of Mutual Coupling between Closely Spaced Microstrip Antennas Array...TELKOMNIKA JOURNAL
Reducing mutual coupling is a key research area in design of compact microstrip antennas
arrays. To minimize the overall size of the antennas arrays, the distance between them must be very
small, as a result a strong mutual coupling is appears. Periodic structures can help to design a low profile
of antennas arrays and enable to improve their performances by the suppression of surface waves
propagation in a given frequency range. This paper proposes a novel configuration of mushroom-like
electromagnetic band-gap (2D-EBG) structure created by microstrip technology placed between two
antennas arrays to reduce the mutual coupling more than -33.24dB. When 13×2 EBG structures are used,
the mutual coupling reduces to -59.36dB at the operation frequency 5.8GHz of the antennas arrays. A
26.12dB mutual coupling reduction is achieved, which proves that the surface wave is suppressed. The
proposed configuration is designed, optimized, and miniaturized by using electromagnetic software CST
Microwave Studio. The measured results show that there is a good agreement with the computed results.
Numerical Simulation and Efficiency Improvement of Solar Cell using Multi Lay...Dr. Amarjeet Singh
Efficiency improvement of solar cell has been
achieved using design and simulation of anti-reflecting
coating. Anti-Reflecting coating helps in deploying new
geometries shape for the evaluation of different methods to
provide for light trapping in all directions and enables full
space utilization when bringing together into device arrays.
Efficiency improvement strategies have been discussed using
efficient selection of modules and surface texturing using
TCAD tools. Significant improvement in yield and
minimization of losses was achieved using device simulation
and process simulation platform using silvaco tools. Multilayer anti reflecting coating has been designed which can be
studied to analyze the performance of system. It was observed
that multi-layer coating helps in improvement of available
current for similar light beam under simulation.
Effect of EBG Structures on the Field Pattern of Patch Antennas ijmnct
The incorporation of number of unit cells in EBG arrangement produces two major side effects on the performance of patch antenna. First one is parasitic loading, this causes multi resonance in antenna hence obtains some enhancement in antenna band width. Second one is cavity effect, this reflects some of energy from EBG toward antenna which results in reducing bandwidth. Present paper, rectangular microstrip patch
antenna is surrounded by number of EBG rows is designed; and the results of proposed antenna with a conventional patch antenna is presented comparatively.
Performance comparison of selection nanoparticles for insulation of three cor...IJECEIAES
This paper presents an investigation on the enhancement of electrical insulations of power cables materials using a new multi-nanoparticles technique. It has been studied the effect of adding specified types and concentrations of nanoparticles to polymeric materials such as PVC for controlling on electric and dielectric performance. Prediction of effective dielectric constant has been done for the new nanocomposites based on Interphase Power Law (IPL) model. The multi-nanoparticles technique has been succeeded for enhancing electric and dielectric performance of power cables insulation compared with adding individual nanoparticles. Finally, it has been investigated on electric field distribution in the new proposed modern insulations for three-phase core belted power cables. This research has focused on studying development of PVC nanocomposite materials performance with electric field distribution superior to the unfilled matrix, and has stressed particularly the effect of filler volume fraction on the electric field distribution.
Mutual Coupling Reduction in Antenna Using EBG on Double SubstrateTELKOMNIKA JOURNAL
Malaysia
*Corresponding author, e-mail: raimidewan@gmail.com
Abstract
In this paper, a mutual coupling study is conducted between two-element array
antenna on dual substrate. A single patch antenna is firstly designed on dual substrate layer to
testify appropriate performance at 2.45 GHz. Subsequently, an array of two element patches on
dual substrate are constructed with one of them is incorporated with three EBG unit cell on the
bottom substrate. The radiating patch is on the top substrate, while the EBG unit cell is on the
bottom substrate. With EBGs in separate layers from the antenna array, the antenna elements
are closely separated by a distance of 22 mm with a significant reduced mutual coupling of -
26.61 dB. This corresponds to a distance reduction of 34.68%. The proposed structure
implemented only three EBG unit cells. Apart from that, the study of overlapped case of EBG
with the antenna is also presented.
Reduction of Mutual Coupling between Closely Spaced Microstrip Antennas Array...TELKOMNIKA JOURNAL
Reducing mutual coupling is a key research area in design of compact microstrip antennas
arrays. To minimize the overall size of the antennas arrays, the distance between them must be very
small, as a result a strong mutual coupling is appears. Periodic structures can help to design a low profile
of antennas arrays and enable to improve their performances by the suppression of surface waves
propagation in a given frequency range. This paper proposes a novel configuration of mushroom-like
electromagnetic band-gap (2D-EBG) structure created by microstrip technology placed between two
antennas arrays to reduce the mutual coupling more than -33.24dB. When 13×2 EBG structures are used,
the mutual coupling reduces to -59.36dB at the operation frequency 5.8GHz of the antennas arrays. A
26.12dB mutual coupling reduction is achieved, which proves that the surface wave is suppressed. The
proposed configuration is designed, optimized, and miniaturized by using electromagnetic software CST
Microwave Studio. The measured results show that there is a good agreement with the computed results.
Numerical Simulation and Efficiency Improvement of Solar Cell using Multi Lay...Dr. Amarjeet Singh
Efficiency improvement of solar cell has been
achieved using design and simulation of anti-reflecting
coating. Anti-Reflecting coating helps in deploying new
geometries shape for the evaluation of different methods to
provide for light trapping in all directions and enables full
space utilization when bringing together into device arrays.
Efficiency improvement strategies have been discussed using
efficient selection of modules and surface texturing using
TCAD tools. Significant improvement in yield and
minimization of losses was achieved using device simulation
and process simulation platform using silvaco tools. Multilayer anti reflecting coating has been designed which can be
studied to analyze the performance of system. It was observed
that multi-layer coating helps in improvement of available
current for similar light beam under simulation.
Effect of EBG Structures on the Field Pattern of Patch Antennas ijmnct
The incorporation of number of unit cells in EBG arrangement produces two major side effects on the performance of patch antenna. First one is parasitic loading, this causes multi resonance in antenna hence obtains some enhancement in antenna band width. Second one is cavity effect, this reflects some of energy from EBG toward antenna which results in reducing bandwidth. Present paper, rectangular microstrip patch
antenna is surrounded by number of EBG rows is designed; and the results of proposed antenna with a conventional patch antenna is presented comparatively.
Effect of EBG Structures on the Field Pattern of Patch Antennas ijeljournal
The incorporation of number of unit cells in EBG arrangement produces two major side effects on the
performance of patch antenna. First one is parasitic loading, this causes multi resonance in antenna hence
obtains some enhancement in antenna band width. Second one is cavity effect, this reflects some of energy
from EBG toward antenna which results in reducing bandwidth. Present paper, rectangular microstrip patch
antenna is surrounded by number of EBG rows is designed; and the results of proposed antenna with a
conventional patch antenna is presented comparatively.
Effect of EBG Structures on the Field Pattern of Patch Antennas ijeljournal
The incorporation of number of unit cells in EBG arrangement produces two major side effects on the performance of patch antenna. First one is parasitic loading, this causes multi resonance in antenna hence obtains some enhancement in antenna band width. Second one is cavity effect, this reflects some of energy from EBG toward antenna which results in reducing bandwidth. Present paper, rectangular microstrip patch antenna is surrounded by number of EBG rows is designed; and the results of proposed antenna with a conventional patch antenna is presented comparatively.
Effect of EBG Structures on the Field Pattern of Patch Antennas ijeljournal
The incorporation of number of unit cells in EBG arrangement produces two major side effects on the performance of patch antenna. First one is parasitic loading, this causes multi resonance in antenna hence obtains some enhancement in antenna band width. Second one is cavity effect, this reflects some of energy from EBG toward antenna which results in reducing bandwidth. Present paper, rectangular microstrip patch antenna is surrounded by number of EBG rows is designed; and the results of proposed antenna with a conventional patch antenna is presented comparatively.
Effect of EBG Structures on the Field Pattern of Patch Antennas ijeljournal
The incorporation of number of unit cells in EBG arrangement produces two major side effects on the performance of patch antenna. First one is parasitic loading, this causes multi resonance in antenna hence obtains some enhancement in antenna band width. Second one is cavity effect, this reflects some of energy from EBG toward antenna which results in reducing bandwidth. Present paper, rectangular microstrip patch antenna is surrounded by number of EBG rows is designed; and the results of proposed antenna with a conventional patch antenna is presented comparatively.
Effect of EBG Structures on the Field Pattern of Patch Antennas ijeljournal
The incorporation of number of unit cells in EBG arrangement produces two major side effects on the performance of patch antenna. First one is parasitic loading, this causes multi resonance in antenna hence obtains some enhancement in antenna band width. Second one is cavity effect, this reflects some of energy from EBG toward antenna which results in reducing bandwidth. Present paper, rectangular microstrip patch
antenna is surrounded by number of EBG rows is designed; and the results of proposed antenna with a conventional patch antenna is presented comparatively.
Effect of EBG Structures on the Field Pattern of Patch Antennasijeljournal
The incorporation of number of unit cells in EBG arrangement produces two major side effects on the
performance of patch antenna. First one is parasitic loading, this causes multi resonance in antenna hence
obtains some enhancement in antenna band width. Second one is cavity effect, this reflects some of energy
from EBG toward antenna which results in reducing bandwidth. Present paper, rectangular microstrip patch
antenna is surrounded by number of EBG rows is designed; and the results of proposed antenna with a
conventional patch antenna is presented comparatively.
3 d single gaas co axial nanowire solar cell for nanopillar-array photovoltai...ijcsa
Nanopillar array photovoltaics give unique advantages over today’s planar thin films in the areas of
optical properties and carrier collection, arising from their 3D geometry. The choice of the material
system, however, is essential in order to gain the advantage of the large surface/interface area associated
with nanopillars. Therefore, a well known Si and GaAs material are used in the design and studied in this
nanowire application. This work calculates and analyses the performance of the coaxial GaAs nanowire
and compared with that of Si nanowire using a semi-classical method. The current-voltage characteristics
are investigated for both under dark and AM1.5G illumination. It is found that GaAs nanowire gives almost
double efficiency with its counterpart Si nanowire. Their TCAD simulations can be validated reasonably
with that of published experimental result.
Structural, Electronic and Gamma Shielding Properties of BxAl1-xAsIJMERJOURNAL
ABSTRACT: The structural and electronic properties of BxAl1-xAs ternary alloys in the zincblende structure were systematically investigated by using the first principles calculations. The local density approximation was used for exchanged and correlation interaction. The calculated band gap bowing parameter was discovered to be mightily composition dependent of the Boron concentration. Additionally, we have calculated some gamma shielding parameters of BxAl1-xAs ternary alloys. Primarily, the values of mass attenuation coefficients (μρ) were calculated using WinXCom computer program and then these parameters were utilized to calculate the values of electron density (Nel) and effective atomic number (Zeff) in the wide energy range (1 keV - 100 GeV).
Communication has become a key aspect of our daily life, becoming increasingly portable and mobile. This would need the use of micro strip antennas. The rapid growth has led to the need of antennas with smaller size, increased bandwidth and high gain. In this paper, a new version of micro strip patch antenna is designed by adopting double layered substrate concept and adding a layer of metamaterial structure to a square micro strip antenna. The antenna properties gain, return loss and bandwidth are studied to achieve better performance. The designed patch antenna has an improved bandwidth of 60% at a resonant frequency of 2.47 GHz. This antenna is designed and simulated by using HFSS software.
Mutual Coupling Reduction between Asymmetric Reflectarray Resonant Elements IJECEIAES
A physically asymmetric reflectarray element has been proposed for wide band operations. The dual resonant response has been introduced by tilting one side of the square path element. The numerical results have been analyzed in the frequency band between 24GHz to 28GHz where a reflection phase range of more than 600° has been achieved. The proposed asymmetric element can produce mutual coupling with adjacent elements on a reflectarray. This effect has been monitored by placing the elements in a mirror configuration on the surface of reflectarray. The single unit cell element results have been compared with conventional 4 element unit cell and proposed mirroring element configuration. The proposed mirroring element technique can be used to design a broadband reflectarray for high gain applications.
Flexible dual band dipole antenna incorporates with Electromagnetic Band Gap (EBG) to improve the well-known low profile characteristics of dipole antenna. The antenna operates at 2.45 GHz and 5.8 GHz which is printed on Fast film with 0.13 mm thickness. While the EBG is designed at 5.8 GHz by using Arlon AD350 with 1.016 mm thickness. EBG works as a ground plane for the antenna and helps by improving the realized gainandradiation pattern. Besides, EBG also act as a filter as the resonant frequency of the antenna is close to the EBG band gap. The 2.45 GHz of is eliminated while the performances of antenna at 5.8 GHz is improved. Thus the realized gain is increased up to 6.86 dB and the back lobes are clearly reduced. The designs of dipole antenna with EBG application such as Wifi and others on-body communication devices.
Graphene-based Microbial Fuel Cell Studies with Starch in sub-Himalayan Soilsijeei-iaes
Microbial fuel cells with graphene based cathode and anode is the study of interest. Present work shows the capacity of sub-himalayan soil of Dehradun region of Uttarakhand, India holds potential to cater to power production from soil and organic waste matter. This can be speculated to power less energy intensive devices at the smallest level. Peak voltage of 0.69 V and current density datas are reported.Renewable energy utilization with such samples represents a sustainable usage. The soil bacterias are capable to metabolize the metal substances in the soil through symbiosis. Electric bacteria create conductive pili called nanowires enabling them to transfer electron and this can be utilized effectively.Direct electron transfer mechanisms have been investigated for this work. The biofilm developed by soil bacterias represent the central idea in making value from waste matter.
IJRET : International Journal of Research in Engineering and Technology is an international peer reviewed, online journal published by eSAT Publishing House for the enhancement of research in various disciplines of Engineering and Technology. The aim and scope of the journal is to provide an academic medium and an important reference for the advancement and dissemination of research results that support high-level learning, teaching and research in the fields of Engineering and Technology. We bring together Scientists, Academician, Field Engineers, Scholars and Students of related fields of Engineering and Technology
IJRET : International Journal of Research in Engineering and Technology is an international peer reviewed, online journal published by eSAT Publishing House for the enhancement of research in various disciplines of Engineering and Technology. The aim and scope of the journal is to provide an academic medium and an important reference for the advancement and dissemination of research results that support high-level learning, teaching and research in the fields of Engineering and Technology. We bring together Scientists, Academician, Field Engineers, Scholars and Students of related fields of Engineering and Technology
IJRET : International Journal of Research in Engineering and Technology is an international peer reviewed, online journal published by eSAT Publishing House for the enhancement of research in various disciplines of Engineering and Technology. The aim and scope of the journal is to provide an academic medium and an important reference for the advancement and dissemination of research results that support high-level learning, teaching and research in the fields of Engineering and Technology. We bring together Scientists, Academician, Field Engineers, Scholars and Students of related fields of Engineering and Technology
Effect of EBG Structures on the Field Pattern of Patch Antennas ijeljournal
The incorporation of number of unit cells in EBG arrangement produces two major side effects on the
performance of patch antenna. First one is parasitic loading, this causes multi resonance in antenna hence
obtains some enhancement in antenna band width. Second one is cavity effect, this reflects some of energy
from EBG toward antenna which results in reducing bandwidth. Present paper, rectangular microstrip patch
antenna is surrounded by number of EBG rows is designed; and the results of proposed antenna with a
conventional patch antenna is presented comparatively.
Effect of EBG Structures on the Field Pattern of Patch Antennas ijeljournal
The incorporation of number of unit cells in EBG arrangement produces two major side effects on the performance of patch antenna. First one is parasitic loading, this causes multi resonance in antenna hence obtains some enhancement in antenna band width. Second one is cavity effect, this reflects some of energy from EBG toward antenna which results in reducing bandwidth. Present paper, rectangular microstrip patch antenna is surrounded by number of EBG rows is designed; and the results of proposed antenna with a conventional patch antenna is presented comparatively.
Effect of EBG Structures on the Field Pattern of Patch Antennas ijeljournal
The incorporation of number of unit cells in EBG arrangement produces two major side effects on the performance of patch antenna. First one is parasitic loading, this causes multi resonance in antenna hence obtains some enhancement in antenna band width. Second one is cavity effect, this reflects some of energy from EBG toward antenna which results in reducing bandwidth. Present paper, rectangular microstrip patch antenna is surrounded by number of EBG rows is designed; and the results of proposed antenna with a conventional patch antenna is presented comparatively.
Effect of EBG Structures on the Field Pattern of Patch Antennas ijeljournal
The incorporation of number of unit cells in EBG arrangement produces two major side effects on the performance of patch antenna. First one is parasitic loading, this causes multi resonance in antenna hence obtains some enhancement in antenna band width. Second one is cavity effect, this reflects some of energy from EBG toward antenna which results in reducing bandwidth. Present paper, rectangular microstrip patch antenna is surrounded by number of EBG rows is designed; and the results of proposed antenna with a conventional patch antenna is presented comparatively.
Effect of EBG Structures on the Field Pattern of Patch Antennas ijeljournal
The incorporation of number of unit cells in EBG arrangement produces two major side effects on the performance of patch antenna. First one is parasitic loading, this causes multi resonance in antenna hence obtains some enhancement in antenna band width. Second one is cavity effect, this reflects some of energy from EBG toward antenna which results in reducing bandwidth. Present paper, rectangular microstrip patch
antenna is surrounded by number of EBG rows is designed; and the results of proposed antenna with a conventional patch antenna is presented comparatively.
Effect of EBG Structures on the Field Pattern of Patch Antennasijeljournal
The incorporation of number of unit cells in EBG arrangement produces two major side effects on the
performance of patch antenna. First one is parasitic loading, this causes multi resonance in antenna hence
obtains some enhancement in antenna band width. Second one is cavity effect, this reflects some of energy
from EBG toward antenna which results in reducing bandwidth. Present paper, rectangular microstrip patch
antenna is surrounded by number of EBG rows is designed; and the results of proposed antenna with a
conventional patch antenna is presented comparatively.
3 d single gaas co axial nanowire solar cell for nanopillar-array photovoltai...ijcsa
Nanopillar array photovoltaics give unique advantages over today’s planar thin films in the areas of
optical properties and carrier collection, arising from their 3D geometry. The choice of the material
system, however, is essential in order to gain the advantage of the large surface/interface area associated
with nanopillars. Therefore, a well known Si and GaAs material are used in the design and studied in this
nanowire application. This work calculates and analyses the performance of the coaxial GaAs nanowire
and compared with that of Si nanowire using a semi-classical method. The current-voltage characteristics
are investigated for both under dark and AM1.5G illumination. It is found that GaAs nanowire gives almost
double efficiency with its counterpart Si nanowire. Their TCAD simulations can be validated reasonably
with that of published experimental result.
Structural, Electronic and Gamma Shielding Properties of BxAl1-xAsIJMERJOURNAL
ABSTRACT: The structural and electronic properties of BxAl1-xAs ternary alloys in the zincblende structure were systematically investigated by using the first principles calculations. The local density approximation was used for exchanged and correlation interaction. The calculated band gap bowing parameter was discovered to be mightily composition dependent of the Boron concentration. Additionally, we have calculated some gamma shielding parameters of BxAl1-xAs ternary alloys. Primarily, the values of mass attenuation coefficients (μρ) were calculated using WinXCom computer program and then these parameters were utilized to calculate the values of electron density (Nel) and effective atomic number (Zeff) in the wide energy range (1 keV - 100 GeV).
Communication has become a key aspect of our daily life, becoming increasingly portable and mobile. This would need the use of micro strip antennas. The rapid growth has led to the need of antennas with smaller size, increased bandwidth and high gain. In this paper, a new version of micro strip patch antenna is designed by adopting double layered substrate concept and adding a layer of metamaterial structure to a square micro strip antenna. The antenna properties gain, return loss and bandwidth are studied to achieve better performance. The designed patch antenna has an improved bandwidth of 60% at a resonant frequency of 2.47 GHz. This antenna is designed and simulated by using HFSS software.
Mutual Coupling Reduction between Asymmetric Reflectarray Resonant Elements IJECEIAES
A physically asymmetric reflectarray element has been proposed for wide band operations. The dual resonant response has been introduced by tilting one side of the square path element. The numerical results have been analyzed in the frequency band between 24GHz to 28GHz where a reflection phase range of more than 600° has been achieved. The proposed asymmetric element can produce mutual coupling with adjacent elements on a reflectarray. This effect has been monitored by placing the elements in a mirror configuration on the surface of reflectarray. The single unit cell element results have been compared with conventional 4 element unit cell and proposed mirroring element configuration. The proposed mirroring element technique can be used to design a broadband reflectarray for high gain applications.
Flexible dual band dipole antenna incorporates with Electromagnetic Band Gap (EBG) to improve the well-known low profile characteristics of dipole antenna. The antenna operates at 2.45 GHz and 5.8 GHz which is printed on Fast film with 0.13 mm thickness. While the EBG is designed at 5.8 GHz by using Arlon AD350 with 1.016 mm thickness. EBG works as a ground plane for the antenna and helps by improving the realized gainandradiation pattern. Besides, EBG also act as a filter as the resonant frequency of the antenna is close to the EBG band gap. The 2.45 GHz of is eliminated while the performances of antenna at 5.8 GHz is improved. Thus the realized gain is increased up to 6.86 dB and the back lobes are clearly reduced. The designs of dipole antenna with EBG application such as Wifi and others on-body communication devices.
Graphene-based Microbial Fuel Cell Studies with Starch in sub-Himalayan Soilsijeei-iaes
Microbial fuel cells with graphene based cathode and anode is the study of interest. Present work shows the capacity of sub-himalayan soil of Dehradun region of Uttarakhand, India holds potential to cater to power production from soil and organic waste matter. This can be speculated to power less energy intensive devices at the smallest level. Peak voltage of 0.69 V and current density datas are reported.Renewable energy utilization with such samples represents a sustainable usage. The soil bacterias are capable to metabolize the metal substances in the soil through symbiosis. Electric bacteria create conductive pili called nanowires enabling them to transfer electron and this can be utilized effectively.Direct electron transfer mechanisms have been investigated for this work. The biofilm developed by soil bacterias represent the central idea in making value from waste matter.
IJRET : International Journal of Research in Engineering and Technology is an international peer reviewed, online journal published by eSAT Publishing House for the enhancement of research in various disciplines of Engineering and Technology. The aim and scope of the journal is to provide an academic medium and an important reference for the advancement and dissemination of research results that support high-level learning, teaching and research in the fields of Engineering and Technology. We bring together Scientists, Academician, Field Engineers, Scholars and Students of related fields of Engineering and Technology
IJRET : International Journal of Research in Engineering and Technology is an international peer reviewed, online journal published by eSAT Publishing House for the enhancement of research in various disciplines of Engineering and Technology. The aim and scope of the journal is to provide an academic medium and an important reference for the advancement and dissemination of research results that support high-level learning, teaching and research in the fields of Engineering and Technology. We bring together Scientists, Academician, Field Engineers, Scholars and Students of related fields of Engineering and Technology
IJRET : International Journal of Research in Engineering and Technology is an international peer reviewed, online journal published by eSAT Publishing House for the enhancement of research in various disciplines of Engineering and Technology. The aim and scope of the journal is to provide an academic medium and an important reference for the advancement and dissemination of research results that support high-level learning, teaching and research in the fields of Engineering and Technology. We bring together Scientists, Academician, Field Engineers, Scholars and Students of related fields of Engineering and Technology
IJRET : International Journal of Research in Engineering and Technology is an international peer reviewed, online journal published by eSAT Publishing House for the enhancement of research in various disciplines of Engineering and Technology. The aim and scope of the journal is to provide an academic medium and an important reference for the advancement and dissemination of research results that support high-level learning, teaching and research in the fields of Engineering and Technology. We bring together Scientists, Academician, Field Engineers, Scholars and Students of related fields of Engineering and Technology
A heuristic approach for optimizing travel planning using genetics algorithmeSAT Publishing House
IJRET : International Journal of Research in Engineering and Technology is an international peer reviewed, online journal published by eSAT Publishing House for the enhancement of research in various disciplines of Engineering and Technology. The aim and scope of the journal is to provide an academic medium and an important reference for the advancement and dissemination of research results that support high-level learning, teaching and research in the fields of Engineering and Technology. We bring together Scientists, Academician, Field Engineers, Scholars and Students of related fields of Engineering and Technology
An experiental investigation of effect of cutting parameters and tool materia...eSAT Publishing House
IJRET : International Journal of Research in Engineering and Technology is an international peer reviewed, online journal published by eSAT Publishing House for the enhancement of research in various disciplines of Engineering and Technology. The aim and scope of the journal is to provide an academic medium and an important reference for the advancement and dissemination of research results that support high-level learning, teaching and research in the fields of Engineering and Technology. We bring together Scientists, Academician, Field Engineers, Scholars and Students of related fields of Engineering and Technology
IJRET : International Journal of Research in Engineering and Technology is an international peer reviewed, online journal published by eSAT Publishing House for the enhancement of research in various disciplines of Engineering and Technology. The aim and scope of the journal is to provide an academic medium and an important reference for the advancement and dissemination of research results that support high-level learning, teaching and research in the fields of Engineering and Technology. We bring together Scientists, Academician, Field Engineers, Scholars and Students of related fields of Engineering and Technology
IJRET : International Journal of Research in Engineering and Technology is an international peer reviewed, online journal published by eSAT Publishing House for the enhancement of research in various disciplines of Engineering and Technology. The aim and scope of the journal is to provide an academic medium and an important reference for the advancement and dissemination of research results that support high-level learning, teaching and research in the fields of Engineering and Technology. We bring together Scientists, Academician, Field Engineers, Scholars and Students of related fields of Engineering and Technology
A density based micro aggregation technique for privacy-preserving data miningeSAT Publishing House
IJRET : International Journal of Research in Engineering and Technology is an international peer reviewed, online journal published by eSAT Publishing House for the enhancement of research in various disciplines of Engineering and Technology. The aim and scope of the journal is to provide an academic medium and an important reference for the advancement and dissemination of research results that support high-level learning, teaching and research in the fields of Engineering and Technology. We bring together Scientists, Academician, Field Engineers, Scholars and Students of related fields of Engineering and Technology
Multi-Junction Solar Cells: Snapshots from the First Decade of the Twenty-Fir...CrimsonPublishersRDMS
Multi-Junction Solar Cells: Snapshots from the First Decade of the Twenty-First Century by Guy Francis Mongelli* in Crimson Publishers: Peer Reviewed Material Science Journals
Design modern structure for heterojunction quantum dot solar cells IJECEIAES
This paper proposal new structure for improving the optical, electrical characteristics and efficiency of 3 rd generation heterojunction quantum dot solar cell (HJQDSC) (ITO/CdS/QDPbS/Au) model by using the quantum dot window layer instead of bulk structure layers cell. Also, this paper presents theoretically analysis for the performance of the proposal HJQDSC (ITO/QDCdS/QDPbS/Au) structure. The new design structure was applied on traditional (SnO2/CdS/CdTe/Cu) and (ZnO/CdS/CIGS/Mo) thin film solar cells which based on sub-micro absorber layer thickness models by replacing the bulk CdTe, CIGS absorber layers and CdS window layer with quantum dot size materials to achieve higher efficiency with lesser usage layer material. Also, it has been studied the effect of using semiconductors layers in quantum dots size on electric and optical properties of thin film solar cells and the effect of window and absorber layers quantum dots radii on the performance of solar cells. Finally, a thermal efficiency analysis has been investigated for explaining the importance of new structure HJQD solar cells.
In this work, the performances of a solar cell based on InGaN were simulated under the illumination conditions of one sun by employing SILVACO software.
Enhancing the Performance of P3HT/Cdse Solar Cells by Optimal Designing of Ac...IOSRJEEE
The present study examined the influence of different condition like as doping , in active layer, on the performance of P3HT/CdSe Solar cells .In this work, we analyzed the best doping for the configuration of P3HT/ CdSe in order to improve the performance of the solar cell. For this aim, we investigated the current density of electrons, the electric field, the short-circuit current and the open-circuit voltage in different doping . The results indicate that when the doping is increased in P3Ht and is decreased in CdSe, the current density of electrons, the electric field, the short-circuit current, and the open-circuit voltage are increased. Finally, we obtained doping of and for electron and hole donor respectively as the best doping for this configuration
Efficiency Improvement of p-i-n Structure over p-n Structure and Effect of p-...iosrjce
IOSR Journal of Applied Physics (IOSR-JAP) is a double blind peer reviewed International Journal that provides rapid publication (within a month) of articles in all areas of physics and its applications. The journal welcomes publications of high quality papers on theoretical developments and practical applications in applied physics. Original research papers, state-of-the-art reviews, and high quality technical notes are invited for publications.
Ring slot CP antenna for the hybrid electromagnetic solar energy harvesting a...TELKOMNIKA JOURNAL
The research proposed a compact antenna integrated with dual-function solar cells to optimize internet of things (IoT) communication devices and energy harvesting. The use of integrated solar cells with electromagnetic elements as antennas and energy-gathering in a design is a solution for wireless communication sensors and simultaneously electromagnetic and solar energy harvesting. Radiation performance testing of solar cell antennas and optical experiments were carried out to test the ability of solar energy collection. A double feed ring slot circular polarization (CP) antenna coplanar antenna with a configuration has highly sensitive to vertical and horizontal waves. It is to accommodate the impact of circular polarization wave and solar cell distortion on antenna performance. This technology promises green communications, renewable energy, and environmental protection to combine wireless communication and green battery components. The study presents the performance and design results of a double line-feed microstrip antenna circuit connected with CP antenna on the S-band for IoT communication by accommodating electromagnetic energy transmission. The importance of adopting an integrated radio frequency (RF) solar energy harvesting strategy rather than a single source method makes this research very significant in its novelty by optimizing the analysis of multiple signal access in IoT communications.
A Systematic Review of Renewable Energy Trend.pdfssuser793b4e
This paper systematically and successfully reviewed the renewable energy trend from 2010 to 2023. This review
detailed the difference renewable energy and conclusion was drawn that solar photovoltaic (PV) energy has the
leading trend in power generation growth and innovation. This research work explained in detail the most recent
solar photovoltaic optimization techniques and it was observed from the review that hybridization of intelligent and
non-intelligent maximum power point tracking technique has the best tracking power conversion efficiency. The
advantages and disadvantage of solar PV together with the solar optimization and innovational growth trends were
examined. This research showed that clean and renewable energy sources will continue to grow and the solar energy
industry is expected to experience significant growth and rapid innovation in the next 10 years. From the observed
rapid growth and innovation trend in solar energy, the world will have a very cheap, abundant and clean energy
before 2050.
The Differences between Single Diode Model and Double Diode Models of a Solar...ssuser793b4e
This research paper systematically reviewed and investigated single
diode model and double diode model of a solar photovoltaic systems in terms
of accuracy, differences under major unknown PV parameters, different
optimization and fabrication. This research paper reviewed the differences and
the similarities between the single diode model and double diode model. From
the review, it was clear that single diode model has less computation time and
number of unknown parameters compared to double diode model. The double
diode model on its own superiority is more accurate under solar shading
condition effect than single diode model but single diode model performs
better under high insolation levels. None of the two models is superior than
the other but the solar photovoltaic modelers/installers should bear the solar
irradiance of the environment before installation
Ultra-optical characterization of thin film solar cells materials using core...IJECEIAES
This paper investigates on new design of heterojunction quantum dot (HJQD) photovoltaics solar cells CdS/PbS that is based on quantum dot metallics PbS core/shell absorber layer and quantum dot window layer. It has been enhanced the performance of traditional HJQD thin film solar cells model based on quantum dot absorber layer and bulk window layer. The new design has been used sub-micro absorber layer thickness to achieve high efficiency with material reduction, low cost, and time. Metallicssemiconductor core/shell absorber layer has been succeeded for improving the optical characteristics such energy band gap and the absorption of absorber layer materials, also enhancing the performance of HJQD ITO/CdS/QDPbS/Au, sub micro thin film solar cells. Finally, it has been formulating the quantum dot (QD) metallic cores concentration effect on the absorption, energy band gap and electron-hole generation rate in absorber layers, external quantum efficiency, energy conversion efficiency, fill factor of the innovative design of HJQD cells.
Improving the performance parameters of microstrip patch antenna by using ebg...eSAT Journals
Abstract Antibiotic toxicity and multi drug resistant pathogens are the two greatest challenges being faced by today's medical world. In the present study, the antimicrobial activity of spices has been investigated as an alternative to antibiotics in order to tackle these dangers. In search of bioactive compound, methanol and acetone extract of 5 Indian spices were screened for antibacterial property. The choice of spice as an alternative is based on two basic reasons: firstly, plants have been the model source of medicine since ancient times and secondly, the increasing acceptance of herbal medicines by general population methanolic and acetone extracts were used to determine antifungal properties of the spices. The antifungal activity of five common Indian spices namely clove, ajwain, turmeric, dalchini and black pepper against two bacteria Aspergillus niger and Trichoderma sp. The results revealed that the methanol extracts of spices (MIC values of 20- 100 μl/ml) have high antimicrobial activities on all test organisms (range of inhibition, 6- 16 mm) as compare to acetone extracts of spices in same concentration. Results concluded that these spices contain high amount of secondary metabolites due to these metabolites they have high antimicrobial activity and it can be used as good bio- preservater and it can also use for medicinal purpose. Keywords: Antibacterial Properties, Secondary Metabolites, Multi Drug Resistant Pathogens.
IJRET : International Journal of Research in Engineering and Technology is an international peer reviewed, online journal published by eSAT Publishing House for the enhancement of research in various disciplines of Engineering and Technology. The aim and scope of the journal is to provide an academic medium and an important reference for the advancement and dissemination of research results that support high-level learning, teaching and research in the fields of Engineering and Technology. We bring together Scientists, Academician, Field Engineers, Scholars and Students of related fields of Engineering and Technology
In this research, the effects of magnetic field intensity on electrical characteristics of a monocrystalline silicon solar cell were investigated. The experimental test-rig under Standard Test Condition was set up and tested to observe the respective effects. The electrical characteristics in terms of current-voltage-power curves, critical solar cell parameters and fill factor were then examined and analyzed. The outcome of this study demonstrates that the external magnetic field has a positive impact on electrical parameters, the experimental results showed that applying magnetic intensity of 60-260mT significantly affected the electrical characteristics of the cell; i.e., maximized cell current, voltage and power by 12.20, 7.12 and 23.60%, respectively. In addition, this positive impact consequencely happened on the i-v and p-v electrical characteristics curves of the solar cell; reflected by 3.69% increasing in the fill factor.
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Welcome to WIPAC Monthly the magazine brought to you by the LinkedIn Group Water Industry Process Automation & Control.
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NO1 Uk best vashikaran specialist in delhi vashikaran baba near me online vas...Amil Baba Dawood bangali
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1. IJRET: International Journal of Research in Engineering and Technology eISSN: 2319-1163 | pISSN: 2321-7308
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DESIGN AND SIMULATION OF INDIUM GALLIUM NITRIDE
MULTIJUNCTION TANDEM SOLAR CELLS
Nargis Akter
Lecturer, Department of CSE, International Islamic University Chittagong, Chittagong, Bangladesh
Abstract
As our global energy expenditure increases exponentially, it is apparent that renewable energy solution must be utilized. Solar PV
technology is the best way to utilize the unlimited solar energy. The InGaN is a recently developed novel solar cell material for its
promising tunable band gap of 0.7 eV to 3.4 eV for the realization of high efficiency tandem solar cells in space and terrestrial
applications. In this work, various numerical simulations were performed using Analysis of Microelectronic and Photonic Structure
(AMPS) simulator to explore the possibility of higher efficiency of InGaN based solar cells. At these aim three different types of
InGaN based solar cells (single junction, double junction and triple junction) were designed and optimized. Numerical simulations
were done with different band gap of InGaN material and found that maximum efficiency occurs around 1.2 eV to 1.5 eV, it has been
optimized at 1.34 eV for (single junction solar cell) with maximum conversion efficiency of 25.02%. The single junction solar cell
were simulated and optimized for optimum thickness of p-layer and n-layer. Doping concentration and back contact material of the
designed cells were investigated and found that 1×1016
cm-3
of doping concentration for both p and n type material and Nical as back
contact with ΦbL of 1.3 eV are best fitted for higher conversion efficiency. From tunable band gap of InxGa1-xN material, selection has
been done at 1.61 eV, 1.44 eV and 1.21 eV for the top, middle and bottom cells respectively for the tandem triple junction and double
junction (1.61 eV, 1.21 eV) solar cells. The best conversion efficiency of the single junction, double junction and triple junction solar
cells are 25.019%, 35.45% and 42.34% respectively. Effect of tunnel junction for the tandem cells also investigated and found that
required thickness for tunnel junction is around 25 nm with doping concentration, NA and ND of 1×1019
and 1×1016
respectively were
found in this analysis. Finally, the temperature coefficient (TC) of the above proposed cells were simulated to investigate the thermal
stability of the proposed cells. It has been found that the TC of InGaN cells is about -0.04%/°C, which indicate the higher stability of
the proposed cells.
Keywords: Solar electricity, Solar cells, InGaN, Tandem, Ultra thin film, AMPS, Conversion Efficiency, Thermal stability.
----------------------------------------------------------------------***----------------------------------------------------------------------
1. INTRODUCTION
Indium Gallium Nitride (InGaN) thin film solar cell has
recently been recognized as a leading photovoltaic candidate
for the possibilities of high conversion efficiency. To attain
the expected breakthrough of photovoltaic technology as a
competitive energy source against fossil fuels, the cell higher
conversion efficiency, low cost and stability are the main
factors. The InGaN material has attractive tunable band gap of
0.7 eV to 3.42 eV and high optical absorption coefficient over
105
/cm which indicates the better absorption of the Sun
spectrum [1, 2]. It is a very potential material for ultra thin
solar cells in space application. Its band gap can be tuned by
varying the amount of Indium in the alloy. The possibility to
perform band gap engineering with InGaN over a range that
provides a good spectral match to sunlight makes InGaN
suitable for solar photovoltaic cells. It is possible to grow
multiple layers with different band gap of InGaN as the
material is relatively insensitive to defects introduced by a
lattice mismatch between the layers [3]. A two-layer
multijunction cell with band gaps of 1.1 eV and 1.7 eV can
attain a theoretical 50% maximum efficiency, by depositing
multiple layers tuned to a wide range of band gaps an
efficiency up to 70% is theoretically expected [3].
The layers of InGaN solar cell can be deposited using the cost
effective techniques, such as Metal Organic Chemical Vapor
Deposition (MOCVD), Metal Organic Vapor Phase Epitaxy
(MOVPE), and Molecular Beam Epitaxy (MBE) [4]. In 2007
Jani et al. have reported GaN/InGaN solar cell [5]. Xiaobin
Zhang et al. published 20.284% conversion efficiency of
InGaN single junction solar cell in 2007 [6]. In 2008 same
group published 24.95% conversion efficiency of single
junction InGaN solar cell and the conversion efficiency of
InGaN tandem solar cells for double junction and triple
junction were 34.34% and 41.72% respectively [7]. Recently
in 2011, S. Ben Machiche has achieved efficiency of 24.88%
for single junction InGaN solar cell and efficiency of 34.34%
and 37.15% for double junction and triple junction tandem
solar cell respectively [8]. The III-V group materials are
widely used for tandem solar cells for the space application,
such as InGaP/GaAs double junction and InGaP/GaAs/Ge
triple junction cells were developed in 2009. Triple junction
structure of GaInP/GaAs/Ge shown efficiency of 41.6% [9]
2. IJRET: International Journal of Research in Engineering and Technology eISSN: 2319-1163 | pISSN: 2321-7308
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but it should be noted that the 0.66 eV indirect band gap
energy of Ge is not optimal as the material for the bottom sub
cell in a triple junction cell. Recently, in 2012 a new structure
of GaInP/GaAs/GaInNAs shows efficiency of 44%, which is
the highest efficiency up to now [10]. But the problem of this
structure is more complex quardinary alloy system of the cell
and the toxicity as well as the cost of Arsenide (As) material is
the biggest barrier of these material system. There are scopes
to reduce the thickness to save materials and to increase the
conversion efficiency by improving short circuit current
density (Jsc), open circuit voltage (Voc) and fill factor (FF)
with different proportion of x in InxGa1-xN material system
with different doping concentration. All the above ideas were
modeled in this work and numerical analysis was done by
using AMPS 1D simulator to achieve the best InGaN single
junction solar cell for higher efficiency and stability. The
proposed cell might be a basic component of tandem solar
cells. The conversion efficiency has been found in this
research work were 25.019%, 35.45% and 42.34%
respectively for the proposed InGaN single junction, double
junction and triple junction tandem solar cell with the
temperature coefficient (TC) of -0.04%/ºC.
2. DESIGN AND SIMULATION
One-dimensional AMPS numerical simulation of InGaN thin-
film solar cells is used in this work. It is a powerful tool to
build a reasonable physical model to test the viability and
numerical simulations can help to predict any changes in cell
performance resulting from the modified reasonable
parameters [11]. Moreover, difficult experimental tasks can
sometimes be by-passed with numerical modeling and
simulations. The operation of semiconductor devices can be
described by a set of basic equations. These equations are
coupled with partial differential equations, for which it is often
not possible to find general analytical solutions. These
equations can be transformed into a set of nonlinear algebraic
equations, which can be solved numerically with a computer.
Poisson’s equation relates the electric field E to the charge
density. In one dimension space, Poisson’s equation is given
by [11]:
ε
ρ
=
dx
dE
(1)
Where, ε is the permittivity. Since the electric field E can be
defined as –dΨ/dx, where Ψ is the electrostatic potential and
the charge density ρ can be expressed by the sum of free
electron n, free hole p, ionized donor doping ND
+
, ionized
acceptor doping NA
−
, trapped electron nt and trapped hole pt,
Poisson’s equation can be written as [11]:
( ) ( ) ( ) ( )( ))()( xtxtAD npNxNxnxpq
dx
d
x
dx
d
−+−+−=
Ψ
− −+
ε (2)
Due to complex and very costly fabrication methods of InGaN
thin film solar cells, the need for numerical modeling method
is higher for InGaN solar cells.
Fig -1: Single junction structure
Fig. 1 illustrates the proposed structure of InGaN based single
junction structure and Fig. 2 illustrates the double junction and
triple junction tandem solar cells structure. In the proposed
InxGa1-xN solar cell structure, a p-type layer which acts as
absorber layer and an n-type layer are connected to form a
single junction solar cell. A transparent and conducting oxide
(TCO) about 200 nm is stagged which acts as the front contact
of the cell, generally deposited on high quality glass substrate.
Sun light strike at the p-type material over which a transparent
conductor is connected as front contact and in the back surface
a metal conductor is connected as back contact material as it
should form an ohmic contact to the n-InGaN. TCO and back
contact are used to achieve thin InGaN layer. The doping
concentration (5×1017
cm3
) used in the earlier study has been
changed to (1×1016
cm3
) more effective and today’s practically
achievable values for higher efficiency. Higher watt function
metals such as Au/Ni/Pt need to be used for back contact as
InGaN has high electron affinity. In this design back contact
material Nical (Ni) has used with back contact barrier height
of 1.3 eV. In this work, Analysis of Microelectronic and
Photonic Structures (AMPS-1D) has been used to investigate
the cell performance with InxGa1-xN.
(a) Double junction (b) Triple junction
Fig -2: Tandem Structure
3. IJRET: International Journal of Research in Engineering and Technology eISSN: 2319-1163 | pISSN: 2321-7308
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For proper design of InGaN based solar cell, first one have to
analyze the equation of material main parameters such as band
gap, electron affinity, optical property, carrier mobility,
density of states, permittivity, absorption coefficient, electric
field distribution and stability at higher operating temperature
etc. At room temperature, band gap (eV) of the InxGa1-xN
material is given by the relation [12]:
( ) ( ) ( )xxxxxEg −−−+= 143.114.37.0 (3)
Where x is the proportion of In content in InxGa1-xN. The band
gap of InN is 0.7 eV and the band gap of GaN is 3.4 eV. The
1.43 eV is the best fitted bowing parameter. From the equation
(3), band gap of InxGa1-xN were calculated and presented in
the plotted in Fig. 3.
Fig -3: Band gap variation with the (x) proportion of In in
InxGa1-xN material.
From the Fig 3, it is clear that InGaN has promisisng tunable
band gap of 0.7 eV to 3.4 eV.
The electron affinity of InGaN is expressed by the relation
given below [13]:
( )gE−+= 4.37.01.4χ (4)
Where Eg is the band gap of the InxGa1-xN material from
equation (3).
The effective density of states in the conduction band: [13]
( )xxNc −+= 18.19.0 (5)
The absorption coefficient α(λ) is related to the particular
wavelength and band gap of the InxGa1-xN material [14].
( ) gE−×=
λ
λα
24.1
102.2 5
(6)
The effective density of states in the valence band [15]:
( )xxNv −+= 18.13.5 (7)
The relative permittivity, [13]:
( )xr −+= 14.106.14ε (8)
The above formulae are obtained from the linear fitting of the
corresponding parameters of InN and GaN [16]. For designing
of InGaN solar cell all parameters are calculated here and
shown in the Fig. 4. From these values, several combinations
of band gap have been tried and selection was made from best
performance of the cells.
Fig -4: Device parameter and Band gap of InxGa1-xN
InGaN is a material with high electron affinity and when the
band gap decreased electron affinity increased and relative
permittivity of InGaN also increased. From Fig. 4 it is clear
that the density of state at conduction band and valence band
shows opposite behavior with the band gap. Effective density
of state at conduction band decreased with decreased band gap
while effective density of state at valence band increased.
Table 1 shows all the required parameters for the simulation of
single junction, double junction and triple junction tandem
solar cel
4. IJRET: International Journal of Research in Engineering and Technology eISSN: 2319-1163 | pISSN: 2321-7308
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Table -1: Parameters for simulation
3. RESULT AND DISCUSSIONS
One of the challenging issues of solar cells is related to the
lesser material usage. The monocrystalline InGaN has high
absorption coefficient over 105
/cm, which means that all the
potential photons of sunlight with energy greater than the band
gap can be absorbed within few μm thin InGaN absorber
layer. Moreover, InxGa1-xN has direct band gap of 0.7 eV to
3.4 eV, to utilize whole solar spectrum. In my previous
research it was published that absorber layer thickness of 0.5
µm is enough to create a best performance cell with 0.1 µm n
layer at 1.34 eV [17]. In another work of triple junction
tandem solar cell, bandgap selection has been made for the top
cell, middle cell and bottom cell and they are 1.61 eV, 1.44 eV
and 1.21 eV[18].
In this research it can be seen from the Fig. 5, electric field
distribution of the cell that the field diminishes before 0.5 µm
of p-InGaN thickness. The charge depletion extends
approximately 0.5 microns into the p-InGaN layer. If the
thickness of the p-InGaN layer is restricted to smaller values
(<0.5 µm), then the InGaN layer is said to be ‘fully depleted’.
Type x
Eg
(eV)
εr χ (eV)
Nc 1018
cm-3
Nv 1019
cm-3 NA cm-3 ND
cm-3 μn μn D μm
p 0.64 1.34 13.09 5.54 1.40 4.04 1016
0 955 169.8 0.5
n 0.64 1.34 13.09 5.54 1.40 4.04 0 1016
955 169.8 0.1
p1 0.53 1.61 12.63 5.35 1.56 3.66 1×1016
0 955 169.8 0.5
n1 0.53 1.61 12.63 5.35 1.56 3.66 0 1×1016
955 169.8 0.1
n1+ 0.6 1.44 12.92 5.47 1.46 3.90 0 3×1017
433 169.8 0.03
p1+ 0.7 1.21 13.34 5.63 1.32 4.25 1×1019
0 73.53 3.15 0.02
p2 0.7 1.21 13.34 5.63 1.32 4.25 1×1016
0 955 169.8 0.5
n2 0.7 1.21 13.34 5.63 1.32 4.25 0 1×1016
955 169.8 0.1
p1 0.53 1.61 12.63 5.35 1.56 3.66 1×1016
0 955 169.8 0.5
n1 0.53 1.61 12.63 5.35 1.56 3.66 0 1×1016
955 169.8 0.1
n1+ 0.53 1.61 12.63 5.35 1.56 3.66 0 3×1017
433 86.5 0.03
p1+ 0.6 1.44 12.92 5.47 1.46 3.90 1×1019
0 73.53 3.15 0.02
p2 0.6 1.44 12.92 5.47 1.46 3.90 1×1016
0 955 169.8 0.5
n2 0.6 1.44 12.92 5.47 1.46 3.90 0 1×1016
955 169.8 0.1
n2+ 0.6 1.44 12.92 5.47 1.46 3.90 0 3×1017
433 86.5 0.03
p2+ 0.7 1.21 13.34 5.63 1.32 4.25 1×1019
0 73.53 3.15 0.02
p3 0.7 1.21 13.34 5.63 1.32 4.25 1×1016
0 955 169.8 0.5
n3 0.7 1.21 13.34 5.63 1.32 4.25 0 1×1016
955 169.8 0.1
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Fig-5: The electric field distribution in of InGaN absorber
layer.
The carrier generation rate of 0.5 µm thick InGaN cells are
calculated and found to be in the order of 5×1020
cm-3
s-1
in the
vicinity of InGaN junction as shown in Fig. 6. From the
figure the carrier generation drastically decreases within just
0.5 μm of InGaN absorber layer thickness. So, 0.5 μm
absorber layer has been selected for the different cell with o.1
μm n layer. single junction solar cell of InGaN. Previous result
of single junction cell of this material are 24.95% and 24.88%.
Absober layer thickness was selected at 0.5 μm for the top and
bottom cells. This selectction has been made from rigorus
simulation process by AMPS. The efficiency of the proposed
double junction cell is 35.45%, which is higher than
previously reported double junction cell of InGaN material.
The reputed result are 34.43%. For the triple junction cell,
selected bangaps are 1.61 eV, 1.44 eV and 1.21 eV for top,
middle and bottom cell respectively.
Thickness of absorber layers are 0.5 μm . For triple junction
cell efficiency is 42.34% that is also the highest for InGaN
solar cell ever reported. The reputed results for triple junction
solar cells are 41.72% and 37.15%.
Fig-6: The calculated carrier generation rate in the InGaN
solar cell
From this analysis, it can be concluded that 0.5 μm thickness
of the absorber layer would be better for high efficient cell.
Band gap selection has been made from the numerical
simulation for different ratio of Indium. From the result of this
simulation, optimized band gap were selected 1.61 eV, 1.44
eV and 1.21 eV for the tandem top, middle and bottom cell
respectively. For the double junction cell, band gap of 1.61 eV
and 1.21 eV were selected for top and bottom cell
respectively. And for the single junction solar cell, selected
band gap is 1.34 eV, absorber layer thickness of the selected
cell is 0.5 μm, which is 200 times lower than conventional
solar cells. For the single junction solar cell the efficiency of
designed cell is 25.019%, Jsc=30.883 mA/cm2
, FF=0.876 and
Voc=0.925V. This efficiency is highest for a reputed
Effect of tunnel junction has been analyzed and thickness of
the tunnel junction layer was optimized for the tandem cells
Fig-7: Effect of tunnel junction n layer thickness on tandem
Fig-8: Effect of tunnel junction p layer thickness on tandem
From the proposed cells of single, double and triple junction,
it is observed that the efficiency is increased in the tandem
cells than single junction cell. In tandem cells, different cells
with diffrent band gap are connected by tunnel junction to
form a complete workable cell. The band gaps of the tandem
cells are selected in such a way that it could absorb the
maximum effective solar flux. The Jsc and Voc are very
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important in tandem cell design. The Jsc follow the minimum
value of the connected cells in series and Voc follow the
higher value of the connected cell. In this work, three types of
solar cells have been designed and found that the efficiency is
25.019%, 35.45% and 42.34% for single, double and triple
junction respectively. The Jsc is 30.883 mA/cm2
, 33.984
mA/cm2
and 36.15 mA/cm with Voc is 0.925V, 1.165V and
1.33V; FF is 0.876, 0.895 and 0.88 for the single junction,
double junction and triple junction respectively which are
shown in Table 2 for clear view.
Table 2: Comparison of Single, double and triple junction
InGaN solar cells
Three different cell efficiency curve from AMPS simulation
are shown in Fig. 9.
Fig-9: I-V curve of single, double and triple junction cells
An investigation has been done to understand the effect of
higher operating temperature on the proposed cell efficiency
with temperature ranged from 25 °C to 100 °C. The AMPS
simulation results are shown in Fig. 10. It is evident from the
Fig. 10 that the conversion efficiency linearly decreases with
operating temperature at a temperature coefficient (TC) of -
04%/°C, which also indicate the degree of stability of the cell
at higher operating temperature or in stressed conditions.
For single junction, double junction and triple junction cell TC
is -0.04%/°C. From the analysis of temperature dependency,
cell stability is much better than other conventional solar cell.
Therefore, the designed cell is more stable at higher operating
temperature.
Fig-10: Effect of operating temperature on the tandem cell
performance
CONCLUSIONS
Utilization of the enormous energy of the Sun by converting it
into electricity is an emerging alternative way to fulfill the
energy demand of the mankind. The PV solar cells are very
potential which can be operate continuously without any
maintenance, non-polluting and has the potentiality to fulfill
the shared dream of humanity; clean and affordable energy
from the sun, for all in everywhere. The number of materials
that can be used for solar cell production is large. Recent
studies suggest that thin films will dominate the worldwide
terrestrial market in the near future, since they should be
capable of reaching a lower price figure (in $/Watt). Among
thin film InGaN is the favorable choice because it has
important advantages as a material for solar cells, namely
optimum tunable direct energy gap, higher absorption
coefficient over 105
/cm3
and its ability to keep good electronic
properties under different temperature. Because of the tunable
band gap of 0.7 eV to 3.4 eV and the excellent semiconductor
properties of InGaN, it is a promising material for single
junction as well as tandem solar cells.
Numerical simulation of solar cell is an important way to
predict the effect on cell performance and to test the viability
of the proposed structure. A high efficiency InGaN single
junction solar cell was designed and numerically optimized in
this work with cell efficiency of 25.02%. The double junction
and triple junction InGaN tandem solar cells were designed
and numerically optimized in this work with the conversion
efficiency of 35.45% and 42.34%. These simulated results are
higher than the previously published results of InGaN solar
cells. The thickness of the cells is reduced than other
conventional solar cells and it will reduce the fabrication cost
effectively. Effect of temperature of the proposed cells were
investigated and found that temperature coefficient of the
designed cells is -0.04%/°C, which indicate the thermal
stability of the cell in stressed condition to some extent.
Thermal stability of the proposed cells are in generally is
higher than other conventional solar cell. This work has shown
Solar
cell
Jsc
(mA/cm2
)
Voc
(V)
FF
Efficiency
(%)
Single
Junction
30.883 0.925 0.876 25.02%
Double
Junction
33.984 1.165 0.895 35.45%
Triple
Junction
36.15 1.33 0.88 42.34%
7. IJRET: International Journal of Research in Engineering and Technology eISSN: 2319-1163 | pISSN: 2321-7308
__________________________________________________________________________________________
Volume: 03 Issue: 01 | Jan-2014, Available @ http://www.ijret.org 321
an important way for the design and fabrication of single
junction and tandem solar cells with InGaN material. Thus
InGaN based tandem solar cells were designed and analyzed
numerically. The designed cells of this work need to be
fabricated for further investigation. Much more, research need
to be done on this material for its design process and the
fabrication techniques.
ACKNOWLEDGEMENTS
This work has been supported partially by the post graduate
research grant of the Chittagong University of Engineering &
Technology (CUET). I acknowledge to the above-mentioned
university.
REFERENCES
[1]. Wu J, Walukiewicz W, Yu K M, Ager J W III, Haller E E,
Lu H, Schaff W J, Saito Y and Nanishi Y 2002 Appl. Phys.
lett. 80, 39-67, 2002.
[2]. Xiao H L, Wang X L, Wang J X, Zhang N H, Liu H
X,Zeng Y P, Li J M and Wang Z G 2005 j. Crist. Groyh 276
401, 2005.
[3]. “Solar cell”, http://en.wikipedia.org/wiki/Solar_cell, June
13, 2013.
[4]. “Characterization of InGaN based photovoltaic
devices”www.sciencedirect.com/science/article/pii/S0040609
01200733X.July 5, 2013.
[5]. Jani, O., Ferguson, I., Honsberg, C.,Kurtz, S. Design and
.characterization of GaN/InGaN solar cells. Appl. Phys. Lett.
91, pp.132-117, 2007.
[6]. “Simulation of In0.65Ga0.35N single junction solar cells”
Journal of Physics D: Applied Physics, vol.40, pp.7335-7338,
2007.
[7]. Xiaoming; Shen Shuo; Lin Fubin; Li Yiming; Wei
Shuiku; Zhong Haibin; Wan Jiangong Li ”Simulation of the
InGaN-based tandem solar cells” Photovoltaic Cell and
Module Technologies II, edited by Bolko von Roedern, Alan
E. Delahoy, Proc. of SPIE Vol. 7045, 2008.
[8]. ”Potential of InxGa1-xN PhotovoltaicTandem”Revuedes
Energies Renouvelables Vol.14, pp. 47-56,2011.
[9]. Takamoto T., Kodama T., Yamaguchi H., Agui T.,
Takahashi N., Washio H., Hisamatsu T., Kaneiwa M.,
Okamoto K., Imaizumi M., Kibe K., InGaP/GaAs solar cells.
In Proceedings of the IEEE 4th World Conference on
Photovoltaic Energy Conversion, Waikoloa, HI, USA, pp.
1769–1772, May 2006.
[10]. “Solar spectrum conversion for photovoltaics using
nanoparticles”igitur-archive. library. uu.nl/milieu/2012-1102-
00548/UUindex. html.
[11]. “AMPS Manual”, The Electronic Materials and
Processing Research Laboratory at the Pennsylvania State
University, University Park, Pennsylvania, Pennsylvania State
University, 2007.
[12]. Chris G., Van de Walle, M.D. McCluskey, C.P. Master,
L.T. Romano, N.M. Johnson, “Large and composition-
dependent band gap bowing in InxGa1_xN alloys”, Xerox
Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto,
California 94804, USA.
[13]. Levinshtein M.E., Rumyantsev S. L., Shur
M.S.,”Properties of Advanced Semiconductor Materials”,
Wiley,Chichester,UK,1-90, 2001.
[14]. Li N., ”Simulation and Analysis of GaN-based
Photoelectronic Devices”,Institute of Semiconduectors,
Chinese Academy of Sciences, 2005.
[15]. Jiangong Li, Fubin Li, Shuo Lin, Shuiku Zhong,
Yiming Wei, Xianghai Meng, Xiaoming Shen, ”Theoritical
Calculation of Conversion Efficiency of InGaN Solar Cells”
Chinese Journal of Semiconductors, vol. 28, pp. 1392-1395,
2007.
[16]. Mnatsakanov T.T.,Livinshetein M.E., Pomortseva L.I.,
Yurkov S.N., Simin G.S., Asif Khan M.,”Carrier mobility
model for GaN” Solid-State Elrctron, vol.47,pp. 111-115,
2003.
[17]. M. A. Matin, N. Akter, M. Quamruzzaman, N.
Amin,”High Performance InGaN Solar Cell from Numerical
Analysis” International Journal of Engineering Research &
Technoogy, vol. 2, pp. 2739-2745, 2013.
[18]. N. Akter , M. A. Matin, N. Amin,”High Performance
InxGa1-xN Tandem Solar Cell Designed from Numerical
Analysis” Procceedings of the IEEE Conference on Clean
Energy and Technology, pp.469-472,
BIOGRAPHIES
Nargis Akter, M.Sc and B.Sc in EEE from
Chittagong University of Engineering and
Technology (CUET). Lecturer in theDepartment
of CSE in the International Islamic University
Chittagong, Bangladesh