In this work, the performances of a solar cell based on InGaN were simulated under the illumination conditions of one sun by employing SILVACO software.

1. Simulation of p-GaN/ i-InGaN/n-GaN Solar Cell
Presented By
Khan, Md. Rabiul Islam (15-98279-1)
Nazneen, Rifat (15-98878-3)
Taher, Md. Iktiham Bin (15-98378-1)
Khan, Mohammad Irfan (15-98393-1)

2. Overview
Introduction
Properties Of III- Nitride Materials
Properties of InxGa1-xN used in simulations
Structure model and Few parameters for Simulation
Results And Discussion
Conclusion
In this work, the performances of a solar cell based on InGaN were simulated under the illumination
conditions of one sun by employing SILVACO software.

3. Introduction
Enhancing conversion efficiency from sunlight into electricity is the
main job in the photovoltaic technology of solar cells.
This process requires firstly, a material in which the absorption of
light raises an electron to a higher energy state, and secondly, the
movement of this higher energy electron from the solar cell into an
external circuit.
Our methodology is to make the solar cell absorb as much as possible
of the solar spectrum by using material engineering. We tune the band
gap of InN indicates that the band gaps of the InxGa1-xN alloys can
extend continuously from 0.67 eV (InN, in the near IR) to 3.4 eV
(GaN, in the mid-UV) , which cover the most of the solar spectrum.
This opens the possibility of fabricating multi-junction solar cells with
high efficiency based solely on the InGaN ternary alloy.

4. Properties Of III- Nitride Materials
What is III- Nitride Material
III – nitrate is a direct band gap
semiconductor material. Here, the alloy
of InGaN is a mixer of gallium nitride
(GaN) and indium nitride (InN). Its
bandgap is tuned over the entire range
of the solar spectrum from 0.67 eV to
3.4 eV.
Why use III- Nitride material
• It has a higher band gap which can cover the solar
spectrum range (0.67eV to 3.4eV)
• Has long extinction diffusion length
• High carrier mobility
• Provide high efficiency due to the presence of
higher band gap.
• Ability to absorb high photon energy.
• Provide lattice match with other materials.
• High drift velocity
• Has direct and tunable band gap
• Provide high temperature and radiation resistance .

5. Difference Between III- Nitrate Multi Junction Cell And Other Cells

6. Properties of InxGa1-xN used in simulations
• The unstrained bandgap energy of InxGa1–xN is
expressed by the following formula:
• Electron Affinity:
• Effective density of states in the conduction
band
Effective density of states in the valence band:
• Relative permittivity:
• The electron and hole nobilities were
calculated as a function of doping using
where i represents either electrons (e) or holes
(h), N is the doping concentration and μmin, μmax,
γ and Ng are parameters specific to a given
semiconductor
)1(43.1)1(4.37.0)( 1 xxxxNGaInE xxg 
)1(3.29.0 xxNc 
)1(8.13.5 xxNy 
)1(4.103.14 xxe 
t
ii
ii
lNgN
N 


),/(1
)( min,max,
,min



)4.3(7.01.4 gEX 

7. Structure model
Schematic structure of the solar cells Mesh of the structure

8. The simulation of electric fields and Internal potential
Electric field across the structure Internal potential across the structure

9. Concentration of free electrons and free holes

10. Results And Discussion
The Characteristics Of the Solar Cell
At open Circuit point , V=0 And V=Voc Gives
The Efficiency Of The Solar Cell
Another important solar cell parameter is the fill
factor (FF)
JSc= 29.95 mA/cm2
VOC = 2.55 V
n=ideality factor
Pin=1000Wm2 under 1 sun, AM1.5
condition
sc
nkTqv
s JeJJ  )1( /
)1ln( 
Js
Jsc
q
nkT
Voc
%100
in
mm
P
JV

ococ
mm
JV
JV
FF 

11. Results And Discussion (cont.…)
I-V characteristic curve of solar cell. Result Of Simulation
Jsc(mA/cm2) VOC(V) FF(%) n(%)
29.95 2.55 89.60 68.54

12. Results And Discussion (cont.…)
The spectral response at a given
wavelength is defined as
• the peak wavelengths of the JSC
spectra were measured at 615
nm with about 4e-10A.
)(
)(
)(



I
J
SR
ph


13. Why Our Proposed Idea is the Best?

14. Conclusion
In this work, we studied a solar cell based on InGaN by employing
SILVACO software, I-V characteristic, band structure, mesh of the
structure, band gap, and spectral response… etc., were performed. For
a doping equal to 1e19, 1e16 and 1e19 cm-3 respectively for the p-GaN,
i-In0.39Ga0.61N and n-GaN layers, we arrive at a short-circuit current and
voltage open circuit equal to 29.95 mA/cm2 and 2.55 V respectively.
The spectral response of the cell has been simulated using 1-sun AM1.5
illumination. Results show that that the peak wavelengths of the Jsc
spectra were measured at 615 nm with about 4e-10A.