TPC8203 PSpice Model (TOSHIBA)

Device Modeling Report
COMPONENTS: Power MOSFET (Professional)
PART NUMBER: TPC8203
MANUFACTURER: TOSHIBA
Body Diode (Professional) / ESD Protection Diode
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

SPICE MODEL
*$
*PART NUMBER: TPC8203
*MANUFACTURER: TOSHIBA
*VDSS=30, IDSS=6
*All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
.SUBCKT TPC8203 1 2 3 4 5 6 7 8
X_U1 DX 2 1 M8203_pr
X_U2 2 1 DZ8203
X_U3 1 DX D8203
X_U4 DY 4 3 M8203_pr
X_U5 4 3 DZ8203
X_U6 3 DY D8203
R_R5 5 DY 0.01u
R_R6 6 DY 0.01u
R_R7 7 DX 0.01u
R_R8 8 DX 0.01u
.ENDS
*****IC PACKAGE MODEL*****
Circuit Configuration
TPC8203

POWER MOSFET SPICE MODEL
.SUBCKT M8203_pr D G S
CGD 1 G 1.575n
R1 1 G 10MEG
S1 1 D G D SMOD1
D1 2 D DGD
R2 D 2 10MEG
S2 2 G D G SMOD1
M1 D G S S TPC8203_ME
.MODEL SMOD1 VSWITCH( VON=0V VOFF=-10mV RON=1m ROFF=1E12)
.MODEL DGD D( CJO=6.323E-10 M=.3623 VJ=.7643 )
.MODEL TPC8203_ME NMOS
+ LEVEL=3 L=1.9200E-6 W=.5173 KP=203.63E-6
+ RS=10.0E-3 RD=1.642E-3 VTO=2.2358 RDS=3.0E6
+ TOX=80.000E-9 CGSO=268.98E-11 CGDO=7.33E-12
+ CBD=1.0640E-9 MJ=.8609 PB=1.2903
+ RG=19 RB=1 GAMMA=0 ETA=50.0E-3 KAPPA=0
.ENDS
*****MOSFET PROFESSIONAL MODEL*****
Equivalent Circuit
S
DGD
G
R2
10MEG
R1
10M CGD
+
-
+
-
S1
S
D
Q1
+
-
+
-
S2
S

MOSFET MODEL
Pspice model
parameter
Model description
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Modility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility

Transconductance Characteristic
Circuit Simulation Result
Comparison table
gfs
Id(A)
Measurement Simulation
Error(%)
0.500 7.000 6.950 -0.714
1.000 9.500 9.480 -0.211
2.000 13.000 13.230 1.769
5.000 19.000 19.370 1.947

Vgs-Id Characteristic
Circuit Simulation result
V_V2
0V 1.0V 2.0V 3.0V 4.0V 5.0V 6.0V
I(V3)
0A
2.0A
4.0A
6.0A
8.0A
Evaluation circuit
0
V1
10Vdc
0
open
open
open
V3
0Vdc
R1
100MEG
open
V2
0Vdc
U17
TPC8203
open

Comparison Graph
Simulation Result
VGS(V)
ID(A)
Error (%)
1.000 2.300 2.303 0.130
2.000 2.400 2.392 -0.333
4.000 2.520 2.524 0.159
6.000 2.630 2.631 0.038
8.000 2.720 2.723 0.110

Rds(on) Characteristic
V_VDS
0V 20mV 40mV 60mV 80mV 100mV
I(V3)
0A
1.0A
2.0A
3.0A
4.0A
5.0A
Evaluation circuit
open
open
U17
TPC8203
V3
0Vdc
open
0
open
Ropen
100MEG
0
open
VDS
0Vdc
VGS
10Vdc
Simulation Result
ID=3.0A, VGS=10V Measurement Simulation Error (%)
R (on)
DS 14.000 mΩ 14.000 mΩ 0.000

Gate Charge Characteristic
Time*1mS
0 10n 20n 30n 40n 50n
V(W1:3)
0V
2V
4V
6V
8V
10V
VDD=24V
-
+
W1
ION = 0uA
IOFF = 100uA
W
V2
0Vdc
open
U18
TPC8203
open
0
open
V1
24Vdc
open
I1
TD = 0
TF = 10n
PW = 600u
PER = 1000u
I1 = 0
I2 = 1m
TR = 10n I2
6Adc
D1
Dbreak
open
Ropen
100MEG
0
Evaluation circuit
Simulation Result
VDD=24V,ID=6.0A
,VGS=10V
Measurement Simulation Error (%)
Qgs 4.700 nC 4.719 nC 0.404
Qgd 10.000 nC 10.000 nC 0.000
Qg 40.000 nC 40.042 nC 0.105
12V
6.0V

Capacitance Characteristic
Simulation
Measurement
Simulation Result
Cbd(nF)
VDS(V)
Error(%)
0.100 1.000 1.024 2.400
0.200 0.940 0.940 0.000
0.500 0.800 0.797 -0.375
1.000 0.650 0.648 -0.308
2.000 0.480 0.481 0.208
5.000 0.270 0.267 -1.111
10.000 0.160 0.155 -3.125
20.000 0.100 0.102 2.000

Switching Time Characteristic
Time
1.95us 2.00us 2.05us 2.10us
V(R1:1) V(L2:1)/1.5
0
5
10
14
Evaluation circuit
V2
TD = 2u
TF = 7n
PW = 20u
PER = 2000u
V1 = 0
TR = 6n
V2 = 20
R2
5
open
open
0
open
0
open
open
L1
30nH
R1
4.7
V1
15Vdc
Ropen
100MEG
U17
TPC8203
L2
50nH
RG
4.7
Simulation Result
ID=3.0A, VDD=15V
VGS=0/10V
Measurement Simulation Error(%)
ton 20.000 ns 20.052 ns 0.260

Output Characteristic
0V 1.0V 2.0V 3.0V 4.0V 5.0V
I(Vd )
0A
2A
4A
6A
8A
10A
6V
4V
8V
10V
2.8V
VGS=2.5V
2.6V
2.65V
2.75V
2.7V
Evaluation circuit
open
Vdsense
0Vdc
Vv ariable
10Vdc
open open
0
R1
100MEG
TPC8203
Vstep
10Vdc
0
open
open

BODY DIODE SPICE MODEL
.SUBCKT D8203 A K
R_R2 5 6 100
R_R1 3 4 1
C_C1 5 6 278p
E_E1 5 K 3 4 1
S_S1 6 K 4 K _S1
RS_S1 4 K 1G
.MODEL _S1 VSWITCH Roff=50MEG Ron=1m Voff=90mV Von=100mV
G_G1 K A VALUE { V(3,4)-V(5,6) }
D_D1 2 K D8203_ME
D_D2 4 K D8203_ME
F_F1 K 3 VF_F1 1
VF_F1 A 2 0V
.MODEL D8203_ME D
+ IS=14.413E-9 N=1.4623 RS=12.688E-3
+ IKF=277.90 CJO=1.0000E-12 M=.3333
+ VJ=.75 BV=30 IBV=100E-6 TT=18.621E-9
.ENDS
*****BODY DIODE PROFESSIONAL MODEL****

Forward Current Characteristic
V_V1
0V 0.4V 0.8V 1.2V
I(R1)
100mA
1.0A
10A
Evaluation Circuit
R1
0.01m
open 0
open
V1
0Vdc
open
open
U18
TPC8203
0
Ropen
100MEG
open

Comparison Graph
Simulation Result
IDR (A)
VDS (V)
Measurement
VDS (V)
Simulation %Error
0.100 0.600 0.597 -0.500
0.200 0.620 0.624 0.645
0.500 0.660 0.662 0.303
1.000 0.700 0.695 -0.714
2.000 0.740 0.734 -0.811
5.000 0.800 0.806 0.750
10.000 0.900 0.894 -0.667

Reverse Recovery Characteristic
Time
0.9us 1.0us 1.1us 1.2us
I(R1)
-400mA
-300mA
-200mA
-100mA
-0mA
100mA
200mA
300mA
400mA
Evaluation Circuit
0
V1
TD = 0
TF = 10ns
PW = 1us
PER = 100us
V1 = -9.4v
TR = 10ns
V2 = 10.6v
U13
D8203
R1
50
Compare Measurement vs. Simulation
Measurement Simulation Error (%)
trj 10.300 ns 10.344 ns 0.427
trb 65.300 ns 65.531 ns 0.354
trr 75.600 ns 75.875 ns 0.364

Reverse Recovery Characteristic Reference
Trj=10.3(ns)
Trb=65.3(ns)
Conditions:Ifwd=lrev=0.2(A),Rl=50
Relation between trj and trb
Example

ESD PROTECTION DIODE SPICE MODEL
.subckt DZ8203 1 2
D2 1 3 DZ2
D1 2 3 DZ1
.model DZ1 D
+ IS=0.01p N=0.1 ISR=0
+ BV=24.1 IBV=0.001 RS=525
.model DZ2 D
+ IS=0.1p N=0.1 ISR=0
+ BV=24.1 IBV=0.001 RS=0
.ENDS
*****PROTECTION DIODE*****

Zener Voltage Characteristic
V_V1
0V 5V 10V 15V 20V 25V 30V 35V 40V 45V 50V
I(R1)
0A
1mA
2mA
3mA
4mA
5mA
6mA
7mA
8mA
9mA
10mA
Evaluation Circuit
open
open
R1
0.01m open
open
Ropen
100MEG
open
0
U17
TPC8203
open
open
0
V1
0Vdc

Zener Voltage Characteristic Reference

TPC8203 PSpice Model (TOSHIBA)

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