This document discusses electromagnetic modeling of circuits. It begins by noting that circuit analysis typically assumes lumped parameters and uses voltage/current models, which is sufficient for low frequencies but breaks down at RF/microwave frequencies. It then presents electromagnetic finite element analysis simulations that provide a more accurate picture of signal flow as electromagnetic field disturbances propagating through dielectrics like circuit traces, rather than as electron flow. This helps explain phenomena like electromagnetic interference that arise from field effects between components. The document aims to give engineers a more nuanced and complete understanding of power and signal flow beyond typical circuit models.
ELECTRICAL AND INSTRUMENTATION ENGINEERING COURSE FOR OIL AND GAS FACILITIES
Please subscribe to my YouTube Channel for best training lectures:
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Harmonic currents can originate from systems that do not contain energy and in which the sign of the current matches that of the voltage throughout the cycle (e.g. a phase-angle controller for an incandescent lamp). The term ‘wattless current’ is sometimes applied to harmonic currents that do not have substantial voltage harmonics of the same orders to multiply them. The result is a product of current and voltage that is zero. Those harmonic currents have a lot in common with reactive currents and therefore it is possible to combat both reactive power and harmonics by similar means. This publication explains how it can be accomplished effectively and how dedicated filters can be created for individual frequencies.
In addition to the general principles and guidelines, this paper tackles the importance of using high-quality components for accurate filter tuning. It discusses whether to compensate centrally or dispersed, and how to choose the inductor for a given L/C ratio. Finally, it warns that special caution must be taken to (i) prevent the filtering out of sound frequencies used by utilities, and (ii) that despite filtering, harmonics should still be taken into account for rating cables and equipment.
ELECTRICAL AND INSTRUMENTATION ENGINEERING COURSE FOR OIL AND GAS FACILITIES
Please subscribe to my YouTube Channel for best training lectures:
https://www.youtube.com/channel/UCRkUJFOsyZG1E1LDWzUr_hw
Harmonic currents can originate from systems that do not contain energy and in which the sign of the current matches that of the voltage throughout the cycle (e.g. a phase-angle controller for an incandescent lamp). The term ‘wattless current’ is sometimes applied to harmonic currents that do not have substantial voltage harmonics of the same orders to multiply them. The result is a product of current and voltage that is zero. Those harmonic currents have a lot in common with reactive currents and therefore it is possible to combat both reactive power and harmonics by similar means. This publication explains how it can be accomplished effectively and how dedicated filters can be created for individual frequencies.
In addition to the general principles and guidelines, this paper tackles the importance of using high-quality components for accurate filter tuning. It discusses whether to compensate centrally or dispersed, and how to choose the inductor for a given L/C ratio. Finally, it warns that special caution must be taken to (i) prevent the filtering out of sound frequencies used by utilities, and (ii) that despite filtering, harmonics should still be taken into account for rating cables and equipment.
Analytical modeling of electric field distribution in dual material junctionl...VLSICS Design
In this paper, electric field distribution of the junctionless dual material surrounding gate MOSFETs
(JLDMSG) is developed. Junctionless is a device that has similar characteristics like junction based
devices, but junctionless has a positive flatband voltage with zero electric field. In Surrounding gate
MOSFETs gate material surrounds the channel in all direction , therefore it can overcome the short
channel effects effectively than other devices. In this paper, surface potential and electric field distribution
is modelled. The proposed surface potential model is compared with the existing central potential model. It
is observed that the short channel effects (SCE) is reduced and the performance is better than the existing
method.
thevenin theorem.
SLIDE NUMBER 3 EXPLANATION OF THEOREM: it is possible to simplify any electrical circuit, no matter how complex, to an equivalent two-terminal circuit with just a single constant voltage source in series with a resistance (or impedance) connected to a load. SLIDE NUMBER 4 INVENTION STORY THE THEOREM WAS INDEPENDENTLY DERIVED IN 1853 BY THE GERMAN SCIENTIST HERMANN VON HELMHOLTZ. SLIDE NUMBER 5 EXPLANATION OF Thevenin’s equivalent circuit As far as the load resistor RL is concerned, any complex “one-port” network consisting of multiple resistive circuit elements and energy sources can be replaced by one single equivalent resistance Rs and one single equivalent voltage Vs. Rs is the source resistance value looking back into the circuit and Vs is the open circuit voltage at the terminals. SLIDE NUMBER 6 EXPLANATION OF DIAGRAM 1
Let us consider a simple DC circuit as shown in the figure above, where we have to find the load current IL by the Thevenin’s theorem. In order to find the equivalent voltage source, rL is removed from the circuit as shown in the figure below and Voc or VTH is calculated. SLIDE NUMBER 7 EXPLANATION OF DIAGRAM 2
Now, to find the internal resistance of the network (Thevenin’s resistance or equivalent resistance) in series with the open circuit voltage VOC , also known as Thevenin’s voltage VTH, the voltage source is removed or we can say it is deactivated by a short circuit (as the source does not have any internal resistance) SLIDE NUMBER 9 As per Thevenin’s Statement, the load current is determined by the circuit shown above and the equivalent Thevenin’s circuit is obtained. Where, VTH is the Thevenin’s equivalent voltage. It is an open circuit voltage across the terminal AB known as load terminal RTH is the Thevenin’s equivalent resistance, as seen from the load terminals where all the sources are replaced by their internal impedance rL is the load resistance Steps for Solving Thevenin’s Theorem Step 1 – First of all remove the load resistance rL of the given circuit. Step 2 – Replace all the impedance source by their internal resistance. Step 3 – If sources are ideal then short circuit the voltage source and open the current source. Step 4 – Now find the equivalent resistance at the load terminals know as Thevenin’s Resistance (RTH). Step 5 – Draw the Thevenin’s equivalent circuit by connecting the load resistance and after that determine the desired response. Slide number-10 Thevenin Voltage The Thevenin voltage e used in Thevenin's Theorem is an ideal voltage source equal to the open circuit voltage at the terminals. In the example below, the resistance R2 does not affect this voltage and the resistances R1 and R3 form a voltage divider
Slide number-11 Thevinin resistance The Thevenin resistance r used in Thevenin's Theorem is the resistance measured at terminals AB with all voltage sources replaced by short circuits and all current sources replaced by open circuits.
The action potential signal of nerve and muscle is produced by voltage sensitive channels that include a specialized device to sense voltage. Gating currents of the voltage sensor are now known to depend on the back-and-forth movements of positively charged arginines through the hydrophobic plug of a voltage sensor domain. Transient movements of these permanently charged arginines, caused by the change of transmembrane potential, further drag the S4 segment and induce opening/closing of ion conduction pore by moving the S4-S5 linker. The ion conduction pore is a separate device from the voltage sensor, linked (in an unknown way) by the mechanical motion and electric field changes of the S4-S5 linker. This moving permanent charge induces capacitive current flow everywhere. Everything interacts with everything else in the voltage sensor so everything must interact with everything else in its mathematical model, as everything does in the whole protein. A PNP-steric model of arginines and a mechanical model for the S4 segment are combined using energy variational methods in which all movements of charge and mass satisfy conservation laws of current and mass. The resulting 1D continuum model is used to compute gating currents under a wide range of conditions, corresponding to experimental situations. Chemical-reaction-type models based on ordinary differential equations cannot capture such interactions with one set of parameters. Indeed, they may inadvertently violate conservation of current. Conservation of current is particularly important since small violations (<0.01%) quickly (<< 10-6 seconds) produce forces that destroy molecules. Our model reproduces signature properties of gating current: (1) equality of on and off charge in gating current (2) saturating voltage dependence in QV curve and (3) many (but not all) details of the shape of gating current as a function of voltage.
Electronics & Electrical Essential DescriptionKavin Henry
Electronics is a division of Physics that relates to the theory and usage of units in that the electrons journey by way of a vacuum, gasoline, or perhaps a semiconductor medium.
For more details Please visit our Website.
https://thepsymart.com/
Analytical modeling of electric field distribution in dual material junctionl...VLSICS Design
In this paper, electric field distribution of the junctionless dual material surrounding gate MOSFETs
(JLDMSG) is developed. Junctionless is a device that has similar characteristics like junction based
devices, but junctionless has a positive flatband voltage with zero electric field. In Surrounding gate
MOSFETs gate material surrounds the channel in all direction , therefore it can overcome the short
channel effects effectively than other devices. In this paper, surface potential and electric field distribution
is modelled. The proposed surface potential model is compared with the existing central potential model. It
is observed that the short channel effects (SCE) is reduced and the performance is better than the existing
method.
thevenin theorem.
SLIDE NUMBER 3 EXPLANATION OF THEOREM: it is possible to simplify any electrical circuit, no matter how complex, to an equivalent two-terminal circuit with just a single constant voltage source in series with a resistance (or impedance) connected to a load. SLIDE NUMBER 4 INVENTION STORY THE THEOREM WAS INDEPENDENTLY DERIVED IN 1853 BY THE GERMAN SCIENTIST HERMANN VON HELMHOLTZ. SLIDE NUMBER 5 EXPLANATION OF Thevenin’s equivalent circuit As far as the load resistor RL is concerned, any complex “one-port” network consisting of multiple resistive circuit elements and energy sources can be replaced by one single equivalent resistance Rs and one single equivalent voltage Vs. Rs is the source resistance value looking back into the circuit and Vs is the open circuit voltage at the terminals. SLIDE NUMBER 6 EXPLANATION OF DIAGRAM 1
Let us consider a simple DC circuit as shown in the figure above, where we have to find the load current IL by the Thevenin’s theorem. In order to find the equivalent voltage source, rL is removed from the circuit as shown in the figure below and Voc or VTH is calculated. SLIDE NUMBER 7 EXPLANATION OF DIAGRAM 2
Now, to find the internal resistance of the network (Thevenin’s resistance or equivalent resistance) in series with the open circuit voltage VOC , also known as Thevenin’s voltage VTH, the voltage source is removed or we can say it is deactivated by a short circuit (as the source does not have any internal resistance) SLIDE NUMBER 9 As per Thevenin’s Statement, the load current is determined by the circuit shown above and the equivalent Thevenin’s circuit is obtained. Where, VTH is the Thevenin’s equivalent voltage. It is an open circuit voltage across the terminal AB known as load terminal RTH is the Thevenin’s equivalent resistance, as seen from the load terminals where all the sources are replaced by their internal impedance rL is the load resistance Steps for Solving Thevenin’s Theorem Step 1 – First of all remove the load resistance rL of the given circuit. Step 2 – Replace all the impedance source by their internal resistance. Step 3 – If sources are ideal then short circuit the voltage source and open the current source. Step 4 – Now find the equivalent resistance at the load terminals know as Thevenin’s Resistance (RTH). Step 5 – Draw the Thevenin’s equivalent circuit by connecting the load resistance and after that determine the desired response. Slide number-10 Thevenin Voltage The Thevenin voltage e used in Thevenin's Theorem is an ideal voltage source equal to the open circuit voltage at the terminals. In the example below, the resistance R2 does not affect this voltage and the resistances R1 and R3 form a voltage divider
Slide number-11 Thevinin resistance The Thevenin resistance r used in Thevenin's Theorem is the resistance measured at terminals AB with all voltage sources replaced by short circuits and all current sources replaced by open circuits.
The action potential signal of nerve and muscle is produced by voltage sensitive channels that include a specialized device to sense voltage. Gating currents of the voltage sensor are now known to depend on the back-and-forth movements of positively charged arginines through the hydrophobic plug of a voltage sensor domain. Transient movements of these permanently charged arginines, caused by the change of transmembrane potential, further drag the S4 segment and induce opening/closing of ion conduction pore by moving the S4-S5 linker. The ion conduction pore is a separate device from the voltage sensor, linked (in an unknown way) by the mechanical motion and electric field changes of the S4-S5 linker. This moving permanent charge induces capacitive current flow everywhere. Everything interacts with everything else in the voltage sensor so everything must interact with everything else in its mathematical model, as everything does in the whole protein. A PNP-steric model of arginines and a mechanical model for the S4 segment are combined using energy variational methods in which all movements of charge and mass satisfy conservation laws of current and mass. The resulting 1D continuum model is used to compute gating currents under a wide range of conditions, corresponding to experimental situations. Chemical-reaction-type models based on ordinary differential equations cannot capture such interactions with one set of parameters. Indeed, they may inadvertently violate conservation of current. Conservation of current is particularly important since small violations (<0.01%) quickly (<< 10-6 seconds) produce forces that destroy molecules. Our model reproduces signature properties of gating current: (1) equality of on and off charge in gating current (2) saturating voltage dependence in QV curve and (3) many (but not all) details of the shape of gating current as a function of voltage.
Electronics & Electrical Essential DescriptionKavin Henry
Electronics is a division of Physics that relates to the theory and usage of units in that the electrons journey by way of a vacuum, gasoline, or perhaps a semiconductor medium.
For more details Please visit our Website.
https://thepsymart.com/
SINGLE ELECTRON TRANSISTOR: APPLICATIONS & PROBLEMSVLSICS Design
The goal of this paper is to review in brief the basic physics of nanoelectronic device single-electron transistor [SET] as well as prospective applications and problems in their applications. SET functioning based on the controllable transfer of single electrons between small conducting "islands". The device properties dominated by the quantum mechanical properties of matter and provide new characteristics coulomb oscillation, coulomb blockade that is helpful in a number of applications. SET is able to shear domain with silicon transistor in near future and enhance the device density. Recent research in SET gives new ideas which are going to revolutionize the random access memory and digital data storage technologies.
Single Electron Transistor: Applications & Problems VLSICS Design
The goal of this paper is to review in brief the basic physics of nanoelectronic device single-electron transistor [SET] as well as prospective applications and problems in their applications. SET functioning based on the controllable transfer of single electrons between small conducting "islands". The device properties dominated by the quantum mechanical properties of matter and provide new characteristics coulomb oscillation, coulomb blockade that is helpful in a number of applications. SET is able to shear domain with silicon transistor in near future and enhance the device density. Recent research in SET gives new ideas which are going to revolutionize the random access memory and digital data storage technologies.
Modeling and test validation of a 15 kV - 24 MVA superconducting fault curren...Franco Moriconi
High-power short-circuit test results and numerical simulations of a 15kV–24MVA distribution-class High Temperature Superconductor (HTS) Fault Current Limiters (FCL) are presented and compared in this paper. The FCL design was based on the nonlinear inductance model here described, and the device was tested at 13.1kV line-to-line voltage for prospective fault currents up to 23kArms, prior to its installation in the electric grid. Comparison between numerical simulations and fault test measurements show good agreement. Some simulations and field testing results are depicted. The FCL was energized in the Southern California Edison grid on March 9, 2009.
Lecture on Introduction of Semiconductor at North South University as the undergraduate course (ETE411)
=======================
Dr. Mashiur Rahman
Assistant Professor
Dept. of Electrical Engineering and Computer Science
North South University, Dhaka, Bangladesh
http://mashiur.biggani.org
Hybrid optimization of pumped hydro system and solar- Engr. Abdul-Azeez.pdffxintegritypublishin
Advancements in technology unveil a myriad of electrical and electronic breakthroughs geared towards efficiently harnessing limited resources to meet human energy demands. The optimization of hybrid solar PV panels and pumped hydro energy supply systems plays a pivotal role in utilizing natural resources effectively. This initiative not only benefits humanity but also fosters environmental sustainability. The study investigated the design optimization of these hybrid systems, focusing on understanding solar radiation patterns, identifying geographical influences on solar radiation, formulating a mathematical model for system optimization, and determining the optimal configuration of PV panels and pumped hydro storage. Through a comparative analysis approach and eight weeks of data collection, the study addressed key research questions related to solar radiation patterns and optimal system design. The findings highlighted regions with heightened solar radiation levels, showcasing substantial potential for power generation and emphasizing the system's efficiency. Optimizing system design significantly boosted power generation, promoted renewable energy utilization, and enhanced energy storage capacity. The study underscored the benefits of optimizing hybrid solar PV panels and pumped hydro energy supply systems for sustainable energy usage. Optimizing the design of solar PV panels and pumped hydro energy supply systems as examined across diverse climatic conditions in a developing country, not only enhances power generation but also improves the integration of renewable energy sources and boosts energy storage capacities, particularly beneficial for less economically prosperous regions. Additionally, the study provides valuable insights for advancing energy research in economically viable areas. Recommendations included conducting site-specific assessments, utilizing advanced modeling tools, implementing regular maintenance protocols, and enhancing communication among system components.
6th International Conference on Machine Learning & Applications (CMLA 2024)ClaraZara1
6th International Conference on Machine Learning & Applications (CMLA 2024) will provide an excellent international forum for sharing knowledge and results in theory, methodology and applications of on Machine Learning & Applications.
Saudi Arabia stands as a titan in the global energy landscape, renowned for its abundant oil and gas resources. It's the largest exporter of petroleum and holds some of the world's most significant reserves. Let's delve into the top 10 oil and gas projects shaping Saudi Arabia's energy future in 2024.
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Sachpazis:Terzaghi Bearing Capacity Estimation in simple terms with Calculati...Dr.Costas Sachpazis
Terzaghi's soil bearing capacity theory, developed by Karl Terzaghi, is a fundamental principle in geotechnical engineering used to determine the bearing capacity of shallow foundations. This theory provides a method to calculate the ultimate bearing capacity of soil, which is the maximum load per unit area that the soil can support without undergoing shear failure. The Calculation HTML Code included.
The Internet of Things (IoT) is a revolutionary concept that connects everyday objects and devices to the internet, enabling them to communicate, collect, and exchange data. Imagine a world where your refrigerator notifies you when you’re running low on groceries, or streetlights adjust their brightness based on traffic patterns – that’s the power of IoT. In essence, IoT transforms ordinary objects into smart, interconnected devices, creating a network of endless possibilities.
Here is a blog on the role of electrical and electronics engineers in IOT. Let's dig in!!!!
For more such content visit: https://nttftrg.com/
We have compiled the most important slides from each speaker's presentation. This year’s compilation, available for free, captures the key insights and contributions shared during the DfMAy 2024 conference.
5. 5
The Origin of Electromagnetic Interference
(EMI): Traditional circuit analysis is valid
when:
• The circuit components are relatively small;
• The circuit is switching slowly; or
• The components are physically isolated from
one another.
If any of these assumptions fail or are invalid,
then the “electromagnetic” behavior of the
component or circuit must be taken into
account. Traditional circuit analysis,
involving currents and voltages, will not
provide adequate explanations of the circuit’s
behavior. An example of a component where
these assumptions are no longer valid is a
spiral inductor. Spiral inductors are used to
control current in oscillating circuits and may
be found in most RF or radio electronic
systems. For example, every cell phone has
several of these devices.
These components are large relative to the
MHz or GHz frequencies being used, are
experiencing high switching rates, and have
coils that are very close to another so that
electromagnetic coupling may be
occurring between the coils. In Figure 6, we
see an example of the energy flow along a
spiral. The FEA animation makes several “real
world” features apparent. First, note how the
color changes as the field travels along the
spiral path. This is capturing the effect of the
energy attenuation as the field progresses. No
real system is perfectly frictionless; there
always is an energy penalty. Second, note the
presence of a reflected wave at the input
port. Reflections often occur at boundaries
when material impedances are likely to change,
too.
A typical PBC dielectric material is FR4 –a glass
reinforced epoxy-based laminate. The bottom
layer is typically a copper ground plane.
All electric fields begin and end on charge
carriers. These carriers are electrons; however,
by convention we consider current as being
conducted by positive charge carriers. By
another convention, it is assumed that the
field is directed away from a positive charge
carrier and is directed towards a negative
charge carrier. The electric field lines shown in
Figure 5 (B) are therefore for positive charge
carriers. The field lines start from charge
carriers in the copper traces and couple to
separate charge carriers found in the copper
ground plane. The field lines pass through and
are concentrated in the dielectric substrate
(FR4). The substrate is critical. It contains the
bulk of the field disturbance and controls the
speed of the bits (digital data) along the trace.
What is shown in Fig. 4 is an animation
constructed by solving Maxwell’s equations
along the microstrip using finite element
methods. As shown in Figure 4, the electric
field disturbance moves along the trace. The
colors show the field intensity falling off as one
moves away from the trace.
The models in Figures 4 and 5 are constructed
with a dual microstrip trace. Two traces are
used in most of today’s high speed computer
and communication circuits. The digital signals
in the dual traces are compared and used to
ensure the correct data is sent between the
transmitting and receiving integrated circuits
(IC’s). If a bit error is detected (e.g., a zero is
detected that should have been a one) the data
is resent. That is, dual traces are used in a
technique known as Hamming bit error
detection and correction.