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CHIP PACKAGING TECHNOLOGY


   Vinchip Systems
    (a Design and Verification Company)

             Chennai.
Objective
   Why chip packaging?
   Rent’s rule
   Good chip package requirement
   Package Material
   Interconnect levels
   Multichip Modules
   Thermal consideration
   Trends in process technology
   SOI
   Long term developments
Why chip packaging?
   Brings signal & supply wires out of
    silicon die
   Protects against environmental
    condition
   Heat remover
   Provides mechanical strength
Rent’s rule:

   The no of input & output pins to the
    complexity of the circuit, as measured
    by the number of gates .It is written
    as

               P=K *G^(Beta)
Good chip package requirement

   Electrical Requirement
       -C ,R ,L
   Mechanical and thermal properties
      -Heat removal
      -Reliability
   Cost
      -Plastic
      -Ceramic
Package Material
   Ceramic
       Alumina
 Polymer
Factors to be considered
 Thermal expansion

 Dielectric constant

 Interconnect capacitance
Interconnect levels
•   Die-to Package substrate
     ->wire bonding process
           ->7nH-40nH
     ->Tap Automated Bonding (TAB)
           ->(0.3-0.5 )nH
           ->(0.2-0.5)pF
     ->Flip-chip mounting
Cont…
2.Package substrate to board
        ->DIP      <64
        ->PGA >300
        ->Surface mount technique
        ->PLCC
        ->BGA
Multichip Modules
 MCM (multichip module technique)
    ->reducing the layers
    ->die directly on the wired
  backplane
Advantages:
    ->C=0.1pF
    ->L=0.1pF
    ->reduced I/O pads
Thermal consideration
 Temperature:
      ->Reverse biased diodes
      ->Electro migration
      ->Hot electron trapping
Commercial: (0-70)degree C
Industrial       : ((-15) to 85) degree C
Military    : ((-55) to 125) degree C
Trends in process technology
   LDD (Lightly Doped Drain)
      ->Silicide (TiSi2)

   Short term developments
       Copper and low-K dielectrics
        ->Conductivity: Cu>Al
        ->Copper easily diffused in silicon.
        ->Insulated copper (Titanium Nitride)
SOI
   Silicon On Insulator:
       ->Very thin silicon layer,
        deposited on the top of thick
    SiO2 layer.
       ->Parasitic effect reduced
       ->Better on-off transistor
    characteristic
       ->Performance :22%
Long term developments
   Truly 3D Integrated circuits
    ->Getting signals in/out (challenge)
    ->Need extra active layers,between
    the metals
    ->Voltage
    ->Performance
    ->Heat dissipation
Summary
   Thus chip packaging creates good
    impact in designing

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CHIP PACKAGING TECHNOLOGY: RENT'S RULE, INTERCONNECT LEVELS, TRENDS

  • 1. CHIP PACKAGING TECHNOLOGY Vinchip Systems (a Design and Verification Company) Chennai.
  • 2. Objective  Why chip packaging?  Rent’s rule  Good chip package requirement  Package Material  Interconnect levels  Multichip Modules  Thermal consideration  Trends in process technology  SOI  Long term developments
  • 3. Why chip packaging?  Brings signal & supply wires out of silicon die  Protects against environmental condition  Heat remover  Provides mechanical strength
  • 4. Rent’s rule:  The no of input & output pins to the complexity of the circuit, as measured by the number of gates .It is written as P=K *G^(Beta)
  • 5. Good chip package requirement  Electrical Requirement -C ,R ,L  Mechanical and thermal properties -Heat removal -Reliability  Cost -Plastic -Ceramic
  • 6. Package Material  Ceramic  Alumina  Polymer Factors to be considered  Thermal expansion  Dielectric constant  Interconnect capacitance
  • 7. Interconnect levels • Die-to Package substrate ->wire bonding process ->7nH-40nH ->Tap Automated Bonding (TAB) ->(0.3-0.5 )nH ->(0.2-0.5)pF ->Flip-chip mounting
  • 8. Cont… 2.Package substrate to board ->DIP <64 ->PGA >300 ->Surface mount technique ->PLCC ->BGA
  • 9. Multichip Modules  MCM (multichip module technique) ->reducing the layers ->die directly on the wired backplane Advantages: ->C=0.1pF ->L=0.1pF ->reduced I/O pads
  • 10. Thermal consideration  Temperature: ->Reverse biased diodes ->Electro migration ->Hot electron trapping Commercial: (0-70)degree C Industrial : ((-15) to 85) degree C Military : ((-55) to 125) degree C
  • 11. Trends in process technology  LDD (Lightly Doped Drain) ->Silicide (TiSi2)  Short term developments  Copper and low-K dielectrics ->Conductivity: Cu>Al ->Copper easily diffused in silicon. ->Insulated copper (Titanium Nitride)
  • 12. SOI  Silicon On Insulator: ->Very thin silicon layer, deposited on the top of thick SiO2 layer. ->Parasitic effect reduced ->Better on-off transistor characteristic ->Performance :22%
  • 13. Long term developments  Truly 3D Integrated circuits ->Getting signals in/out (challenge) ->Need extra active layers,between the metals ->Voltage ->Performance ->Heat dissipation
  • 14. Summary  Thus chip packaging creates good impact in designing