This document summarizes the analysis and design of a variable gain amplifier using FinFET technology. It finds that FinFETs have several advantages over planar MOSFETs for analog applications, including reduced power dissipation and better voltage gain without degradation of noise or linearity. This makes FinFETs attractive for low-frequency RF applications around 5 GHz. Simulation results show that a variable gain amplifier designed using FinFETs has lower power dissipation and an improved gain range compared to one designed with MOSFETs. However, FinFETs have higher parasitic resistance, which degrades performance at high frequencies where MOSFETs maintain an advantage.