SEMICONDUCTOR DEVICES AND APPLICATIONS.
Introduction to P-N Junction Diode and V-I Characteristics
Half wave and Full wave rectifiers
Capacitor filters
Zener diode and its Characteristics
Zener Diode as Voltage regulator
The Zener diode is fabricated in such a way that, its advantage is in its reverse bios. After a sufficient increase in reverse voltage across the junction, the minority carriers get sufficient kinetic energy due to the strong electric field. The high kinetic energy free electrons can collide strongly with the lattice ions so that they emit more free electrons, these liberated electrons also get high kinetic energy due to reverse applied electric field and they create more free electrons by collision cumulatively. This process may continue repeatedly and soon large free electron gas is created in the depletion layer, at which a small change in potential creates huge recombination and surge of carriers across the junction and hence large current through the circuit spontaneously and hence the entire diode will become conductive.
Zener diode is an important electronic device mainly used as voltage regulator. The experiment explains the determination of zener voltage and resistance of diode.
Best 3 Applications Involving in Zener Diode Working Functionalityelprocus
Zener diodes are normal PN junction diodes operating in a reverse biased condition. Working of the Zener diode is similar to a PN junction diode in forward biased condition, but the uniqueness lies in the fact that it can also conduct when it is connected in reverse bias above its threshold / breakdown voltage. These are among the basic types of diodes used frequently, apart from the normal diodes.
The Zener diode is fabricated in such a way that, its advantage is in its reverse bios. After a sufficient increase in reverse voltage across the junction, the minority carriers get sufficient kinetic energy due to the strong electric field. The high kinetic energy free electrons can collide strongly with the lattice ions so that they emit more free electrons, these liberated electrons also get high kinetic energy due to reverse applied electric field and they create more free electrons by collision cumulatively. This process may continue repeatedly and soon large free electron gas is created in the depletion layer, at which a small change in potential creates huge recombination and surge of carriers across the junction and hence large current through the circuit spontaneously and hence the entire diode will become conductive.
Zener diode is an important electronic device mainly used as voltage regulator. The experiment explains the determination of zener voltage and resistance of diode.
Best 3 Applications Involving in Zener Diode Working Functionalityelprocus
Zener diodes are normal PN junction diodes operating in a reverse biased condition. Working of the Zener diode is similar to a PN junction diode in forward biased condition, but the uniqueness lies in the fact that it can also conduct when it is connected in reverse bias above its threshold / breakdown voltage. These are among the basic types of diodes used frequently, apart from the normal diodes.
Introduction to Semiconductor Devices.
In modern world no other technology permeates every nook and cranny of our existence as does electronics.
Application of electronics are : Televisions, radios, stereo equipment, computers, scanners, electronic control systems (in cars for example) etc.
THIS IS BASED ON PURELY ELECTRONICS ENGINEERING
This course introduces basic concepts of quantum theory of solids and presents the theory describing the carrier behaviors in semiconductors. The course balances fundamental physics with application to semiconductors and other electronic devices.
At the end of this course learners will be able to:
1. Understand the energy band structures and their significance in electric properties of solids
2. Analyse the carrier statistics in semiconductors
3. Analyse the carrier dynamics and the resulting conduction properties of semiconductors
.
Electrical current, voltage, resistance, capacitance, and inductance are a few of the basic elements of electronics and radio. Apart from current, voltage, resistance, capacitance, and inductance, there are many other interesting elements to electronic technology. ... Use Electronics Notes to learn electronics online.
Cosmetic shop management system project report.pdfKamal Acharya
Buying new cosmetic products is difficult. It can even be scary for those who have sensitive skin and are prone to skin trouble. The information needed to alleviate this problem is on the back of each product, but it's thought to interpret those ingredient lists unless you have a background in chemistry.
Instead of buying and hoping for the best, we can use data science to help us predict which products may be good fits for us. It includes various function programs to do the above mentioned tasks.
Data file handling has been effectively used in the program.
The automated cosmetic shop management system should deal with the automation of general workflow and administration process of the shop. The main processes of the system focus on customer's request where the system is able to search the most appropriate products and deliver it to the customers. It should help the employees to quickly identify the list of cosmetic product that have reached the minimum quantity and also keep a track of expired date for each cosmetic product. It should help the employees to find the rack number in which the product is placed.It is also Faster and more efficient way.
Hybrid optimization of pumped hydro system and solar- Engr. Abdul-Azeez.pdffxintegritypublishin
Advancements in technology unveil a myriad of electrical and electronic breakthroughs geared towards efficiently harnessing limited resources to meet human energy demands. The optimization of hybrid solar PV panels and pumped hydro energy supply systems plays a pivotal role in utilizing natural resources effectively. This initiative not only benefits humanity but also fosters environmental sustainability. The study investigated the design optimization of these hybrid systems, focusing on understanding solar radiation patterns, identifying geographical influences on solar radiation, formulating a mathematical model for system optimization, and determining the optimal configuration of PV panels and pumped hydro storage. Through a comparative analysis approach and eight weeks of data collection, the study addressed key research questions related to solar radiation patterns and optimal system design. The findings highlighted regions with heightened solar radiation levels, showcasing substantial potential for power generation and emphasizing the system's efficiency. Optimizing system design significantly boosted power generation, promoted renewable energy utilization, and enhanced energy storage capacity. The study underscored the benefits of optimizing hybrid solar PV panels and pumped hydro energy supply systems for sustainable energy usage. Optimizing the design of solar PV panels and pumped hydro energy supply systems as examined across diverse climatic conditions in a developing country, not only enhances power generation but also improves the integration of renewable energy sources and boosts energy storage capacities, particularly beneficial for less economically prosperous regions. Additionally, the study provides valuable insights for advancing energy research in economically viable areas. Recommendations included conducting site-specific assessments, utilizing advanced modeling tools, implementing regular maintenance protocols, and enhancing communication among system components.
CFD Simulation of By-pass Flow in a HRSG module by R&R Consult.pptxR&R Consult
CFD analysis is incredibly effective at solving mysteries and improving the performance of complex systems!
Here's a great example: At a large natural gas-fired power plant, where they use waste heat to generate steam and energy, they were puzzled that their boiler wasn't producing as much steam as expected.
R&R and Tetra Engineering Group Inc. were asked to solve the issue with reduced steam production.
An inspection had shown that a significant amount of hot flue gas was bypassing the boiler tubes, where the heat was supposed to be transferred.
R&R Consult conducted a CFD analysis, which revealed that 6.3% of the flue gas was bypassing the boiler tubes without transferring heat. The analysis also showed that the flue gas was instead being directed along the sides of the boiler and between the modules that were supposed to capture the heat. This was the cause of the reduced performance.
Based on our results, Tetra Engineering installed covering plates to reduce the bypass flow. This improved the boiler's performance and increased electricity production.
It is always satisfying when we can help solve complex challenges like this. Do your systems also need a check-up or optimization? Give us a call!
Work done in cooperation with James Malloy and David Moelling from Tetra Engineering.
More examples of our work https://www.r-r-consult.dk/en/cases-en/
2. UNIT – 1: SEMICONDUCTOR DEVICES AND
APPLICATIONS
CONTENT:
1. Introduction to P-N Junction Diode and V-I
Characteristics
2. Half wave and Full wave rectifiers
3. Capacitor filters
4. Zener diode and its Characteristics
5. Zener Diode as Voltage regulator
3. UNIT – 2: SEMICONDUCTOR DEVICES AND
APPLICATIONS
CONTENT:
Introduction to BJT, its input-output and transfer characteristics,
BJT as a single stage CE amplifier, frequency response and
bandwidth, FET- input-output and transfer characteristics
Operational amplifier and its applications: Introduction to
operational amplifiers, Op-amp input modes and parameters,
Op-amp in open loop configuration, op-amp with negative
feedback, study of practical op-amp IC 741, inverting and non-
inverting amplifier applications: summing and difference
amplifier, unity gain buffer, comparator, integrator and
differentiator.
4. UNIT – 3: TIMING CIRCUITS AND OSCILLATORS
CONTENT:
1. RC-timing circuits
2. IC 555 and its applications as astable and mono-
stable multi-vibrators
3. Positive feedback
4. Barkhausen's criteria for oscillation
5. R-C phase shift and Wein bridge oscillator.
5. UNIT – 4: DIGITAL ELECTRONICS FUNDAMENTALS
CONTENT:
1. Difference between analog and digital signals,
2. Boolean algebra,
3. Basic and Universal Gates,
4. Logic simplification using Kmap,
5. Logic ICs, half and full adder/subtractor, multiplexers,
de-multiplexers,
6. Flip-flops, shift registers, counters.
7. Block diagram of Microprocessor/Microcontroller and
their applications.
6. UNIT – 5: ELECTRONIC COMMUNICATION SYSTEMS
CONTENT:
1. The elements of communication system
2. IEEE frequency spectrum
3. Transmission media: wired and wireless, need of
modulation, AM and FM modulation schemes
4. Mobile communication systems: cellular concept
and block diagram of GSM system.
7. TEXT BOOKS:
1. Salivahanan, N.Suressh Kumar, A. Vallavaraj,
“Electronic Devices and Circuits”, Tata McGraw
Hill, Second Edition.
2. D. Roy Chowdhury, “Linear Integrated Circuits”,
New Age International (p) Ltd,2nd Edition, 2003.
3. M.Morris Mano & Michel D. Ciletti,“Digital
Design”, 5th Edition Pearson.
4. Simon Haykin, “Communication Systems”, Wiley-
India edition, 3rd edition, 2010.
8. UNIT – 1: SEMICONDUCTOR DEVICES AND
APPLICATIONS
Introduction :
What is an atom?
Atoms are the basic units of matter and the defining
structure of elements.
9. Fundamental
Particles
Nature of Charge Mass in kg
Neutron No charge 1.675 x 10-27
Proton Positive 1.675 x 10-27
Electron Negative 9.107 x 10-31
Nucleus
•Structure of an Atom:
The electrons are arranged in different orbit (2n2)
10. UNIT – 1: SEMICONDUCTOR DEVICES AND
APPLICATIONS
The outermost shell is called Valance Shell and the electrons in
this shell are called Valance Electrons.
Each shell has energy level.
The shell closer to the nucleus bounded tightly with low energy
level.
11. STRUCTURE OF METERIALS
Materials that permit flow of electrons are called conductors (e.g.,
gold, silver, copper, etc.).
Materials that block flow of electrons are called insulators (e.g.,
rubber, glass, Teflon, mica, etc.).
Materials whose conductivity falls between those of conductors
and insulators are called semiconductors.
Semiconductors are “part-time” conductors whose conductivity can
be controlled.
12.
13. SEMICONDUCTORS
Semiconductors are neither conductors nor insulators.
The forbidden gap is 1eV
Silicon and Germanium
The atomic number of silicon is 14 and Germanium 32
15. SEMICONDUCTORS : WHY SILICON?
Valance Shell in 3
Valance electrons are closer to
nucleus
Valance electrons are tightly
packed
Valance Shell in 4
Valance electrons are farer to
nucleus
Valance electrons are loosely
packed
Electrons escape from atom
SILICON GERMANIUM
16. INTRINSIC SEMICONDUCTOR
An intrinsic semiconductor,
also called an undoped
semiconductor or i-type
semiconductor, is a pure
semiconductor without any
significant dopant species
present. The number of
charge carriers is therefore
determined by the properties
of the material itself instead
of the amount of impurities.
17. INTRINSIC SEMICONDUCTOR
Covalent bonding in silicon:
The outermost shell of atom is capable
to hold up to eight electrons. The atom
which has eight electrons in the
outermost orbit is said to be completely
filled and most stable. But the
outermost orbit of silicon has only four
electrons. Silicon atom needs four
more electrons to become most stable.
Silicon atom forms four covalent bonds
with the four neighboring atoms. In
covalent bonding each valence
electron is shared by two atoms.
18. INTRINSIC SEMICONDUCTOR
Electron and hole current:
Current that is caused by electron motion is called electron
current and current that is caused by hole motion is called hole
current
19. EXTRINSIC SEMICONDUCTOR
The semiconductor in which impurities are added is
called extrinsic semiconductor. When the impurities are
added to the intrinsic semiconductor, it becomes an
extrinsic semiconductor.
The process of adding impurities to the semiconductor is
called doping.
Doping increases the electrical conductivity of
semiconductor.
20. EXTRINSIC SEMICONDUCTOR
Extrinsic semiconductor has high electrical
conductivity than intrinsic semiconductor.
Hence the extrinsic semiconductors are used for the
manufacturing of electronic devices such as diodes,
transistors etc.
The number of free electrons and holes in extrinsic
semiconductor are not equal.
21. EXTRINSIC SEMICONDUCTOR
Types of impurities
Two types of impurities are added to the semiconductor. They are
Pentavalent And Trivalent impurities.
Trivalent impurities (P – type Semiconductor)
Trivalent impurity atoms have 3 valence electrons. The various examples of
trivalent impurities include Boron (B), Gallium (G), Indium(In), Aluminium(Al).
22. EXTRINSIC SEMICONDUCTOR
Pentavalent impurities (N – type Semiconductor)
Pentavalent impurity atoms have 5 valence electrons. The various examples
of pentavalent impurity atoms include Phosphorus (P), Arsenic (As), Antimony
(Sb), etc.
Free
electron Covalent
Bond
Pentavalent
impurity
23. 1.1. INTRODUCTION OF PN JUNCTION:
The Extrinsic semiconductor has two types
In N – type, the electrons are majority carriers and holes are minority
carriers
In P – type, the Holes are majority carriers and electrons are minority
carriers
These two types are chemically combined with special fabrication
technique to form PN Junction.
Such combination forms a popular device called Diode.
1.1. PN Junction Diode
P - TYPE N - TYPE
25. 1.1. INTRODUCTION OF PN JUNCTION:
Diffusion Current:
The processes that follow after the formation of a p-n junction are of
two types – diffusion and drift. As we know, there is a difference in
the concentration of holes and electrons at the two sides of a
junction, the holes from the p-side diffuse to the n-side and the
electrons from the n-side diffuse to the p-side. These give rise to a
diffusion current across the junction.
1.1. PN Junction Diode
26. 1.1. 2. EXPLANATION OF PN JUNCTION DIODE:
A diode is a 2 lead semiconductor that acts as a one way gate to
electron flow.
– Diode allows current to pass in only one direction.
A pn-junction diode is formed by joining together n-type and p-type
silicon.
The p-side is called anode(A) and the n-side is called cathode(K).
1.1. PN Junction Diode
27. 1.1. 2. EXPLANATION OF PN JUNCTION DIODE:
A diode is a 2 lead semiconductor that acts as a one way gate to
electron flow.
– Diode allows current to pass in only one direction.
A pn-junction diode is formed by joining together n-type and p-type
silicon.
The p-side is called anode(A) and the n-side is called cathode(K).
1.1. PN Junction Diode
28. 1.1. 2. BIASING OF PN JUNCTION DIODE:
There are three biasing conditions for p-n junction diode and this is based on the
voltage applied:
Zero bias: There is no external voltage applied to the p-
n junction diode.
Forward bias: The positive terminal of the voltage
potential is connected to the p-type while the negative
terminal is connected to the n-type.
Reverse bias: The negative terminal of the voltage
potential is connected to the p-type and the positive is
connected to the n-type.
1.1. PN Junction Diode
29. 1.1. 3. WORKING OF PN JUNCTION DIODE:
Working of Diode in Forward bias :
When a diode is connected to a battery as shown, electrons from the n-side and holes
from the p-side are forced toward the center by the electrical field supplied by the
battery. The electrons and holes combine causing the current to pass through the
diode. When a diode is arranged in this way, it is said to be forward biased.
1.1. PN Junction Diode
30. 1.1. 3. WORKING OF PN JUNCTION DIODE:
Reverse bias:
When a diode is connected to a battery as shown, holes in the n-side are forced to the
left while electrons in the p-side are forced to the right. This results in an empty zone
round the pn- junction that is free of charge carries creating a depletion region. This
depletion region acts as an insulator preventing current from flowing through the
diode. When a diode is arranged in this way, it is said to be reverse biased.
1.1. PN Junction Diode
31. 1
1. In a PN junction with no external voltage, the electric field between
acceptor and donor ions is called a
A.Peak
B.Barrier
C.Threshold
D.Path
1.1. PN Junction Diode Questions
32. 2. In a PN junction the potential barrier is due to the charges on
either side of the junction, these charges are
A.Majority carriers
B.Minority carriers
C.Both (a) and (b)
D.Fixed donor and acceptor ions
1.1. PN Junction Diode Questions
33. 3. The capacitance of a reverse biased PN junction
A.Increases as reverse bias is increased
B.Decreases as reverse bias is increased
C.Increases as reverse bias is decreased
D.Is insignificantly low
1.1. PN Junction Diode Questions
34. 4. In an unbiased PN junction
A.The junction current is due to minority carriers only
B.The junction current at equilibrium is zero as equal but opposite
carriers are crossin
C.The junction current reduces with rise in temperature
D.The junction current at equilibrium is zero as charges do not
cross the junction
g the junction
1.1. PN Junction Diode Questions
35. 5. For a PN junction diode, the current in reverse bias may be
A.Few miliamperes
B.Between 0.2 A and 15 A
C.Few amperes
D.Few micro or nano amperes
1.1. PN Junction Diode Questions
36. 6. When PN junction is in forward bias, by increasing the battery
voltage
A.Circuit resistance increases
B.Current through P-N junction increases
C.Current through P-N junction decreases
D.None of the above happens
1.1. PN Junction Diode Questions
37. 7. When a PN junction is reverse-biased
A.Holes and electrons tend to concentrate towards the junction
B.The barrier tends to break down
C.Holes and electrons tend to move away from the junction
D.None of the above
1.1. PN Junction Diode Questions
38. 8. In a PN junction when the applied voltage overcomes the ........
potential, the diode current is large, which is known as .............
A. Depletion, negative bias
B. Reverse, reverse bias
C. Resistance, reverse bias
D. Barrier, forward bias
1.1. PN Junction Diode Questions
39. 9. A PN junction is said to be forward biased when
A.Positive terminal of the battery is connected to P-side and the
negative side to the N-side
B.Junction is earthed
C.N-side is connected directly to the p-side
D.Positive terminal of the battery is connected to N-side and the
negative side to the P-side
1.1. PN Junction Diode Questions
40. 10. A PN junction
A. Has low resistance in forward as well as reverse directions
B. Has high resistance in forward as well as reverse directions
C. Conducts in forward direction only
D. Conducts in reverse direction only
1.1. PN Junction Diode Questions