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1 
SL Corporation Confidential. 
The Contents may only be passed on, used or made known with our express permission. All rights reserved. © 2014 ANSYS, Inc. May 19, 2014 
Case study of automotive ESD 
SL corporation 
Hongkeun Kim
2 
SL Corporation Confidential. 
The Contents may only be passed on, used or made known with our express permission. All rights reserved. © 2014 ANSYS, Inc. May 19, 2014 
Background 
Circuit Design / Challenges 
Measurements 
Discharge Path Simulation 
Summary 
Outline
3 
SL Corporation Confidential. 
The Contents may only be passed on, used or made known with our express permission. All rights reserved. © 2014 ANSYS, Inc. May 19, 2014 
ESD(Electrostatic Discharge) 
• System of ESD test 
- Contact Discharge 
- Non-contact(Air) Discharge 
Background 
Sharp point 
Body of simulator 
− Case 1. Voltage, Current characteristics when ESD source was excited
4 
SL Corporation Confidential. 
The Contents may only be passed on, used or made known with our express permission. All rights reserved. © 2014 ANSYS, Inc. May 19, 2014 
Modeling of ESD Gun 
ESD Analysis 
− INTERNATIONAL STANDARD 
ISO10605 
− Byoung-Su Seol, David Prommerenke 
“A Circuit Model for ESD Performance 
Analysis of Printed Circuit Boards 
− For 150pF/330pF 330Ω and 5kV
5 
SL Corporation Confidential. 
The Contents may only be passed on, used or made known with our express permission. All rights reserved. © 2014 ANSYS, Inc. May 19, 2014 
Passive Modeling 
ESD Analysis 
− Model all passive components with impedance analyzer 
− To create frequency dependent equivalent network for device 
CQ1608X7R472K Capacitor Impedance 
0.35nH 0.133Ω 4.7nF
6 
SL Corporation Confidential. 
The Contents may only be passed on, used or made known with our express permission. All rights reserved. © 2014 ANSYS, Inc. May 19, 2014 
PCB/Circuit Simulation 
ESD Analysis 
− End time: 150ns 
Virtual 
Load Port 
PDS5100H 
S3M 
Connector
7 
SL Corporation Confidential. 
The Contents may only be passed on, used or made known with our express permission. All rights reserved. © 2014 ANSYS, Inc. May 19, 2014 
Voltage Level 
ESD Analysis 
− Simulation result of the voltage PDS5100H, S3M anode 
: PDS5100H 
: S3M 
-91V 
-444V 
-102V
8 
SL Corporation Confidential. 
The Contents may only be passed on, used or made known with our express permission. All rights reserved. © 2014 ANSYS, Inc. May 19, 2014 
Voltage Level 
ESD Analysis 
- PDS5100H: There is no margin compared with VRRM - S3M: There is 556V margin compared with VRRM 
Peak Repetitive Reverse Voltage(VRRM): 100V Peak Repetitive Reverse Voltage(VRRM): 1000V 
Margin 
= 556V
9 
SL Corporation Confidential. 
The Contents may only be passed on, used or made known with our express permission. All rights reserved. © 2014 ANSYS, Inc. May 19, 2014 
Current Level 
ESD Analysis 
− Simulation result of the current PDS5100H, S3M cathode 
: PDS5100H 
: S3M 
-5V 
-42A
10 
SL Corporation Confidential. 
The Contents may only be passed on, used or made known with our express permission. All rights reserved. © 2014 ANSYS, Inc. May 19, 2014 
2.5D PCB Simulation 
ESD Analysis
11 
SL Corporation Confidential. 
The Contents may only be passed on, used or made known with our express permission. All rights reserved. © 2014 ANSYS, Inc. May 19, 2014 
2.5D PCB Simulation 
ESD Analysis 
− Reverse Voltage occurred in Schottky Diode.(50, 60, 242, 289MHz) 
[PDS5100H] [S3M] 
50MHz 
60MHz 
7.4E-01V 
2.6E-01V 
3.7E-01V 
7.0E-02V 
7.9E-03V 6.8E-01V 
6.8E-03V 5.3E-01V
12 
SL Corporation Confidential. 
The Contents may only be passed on, used or made known with our express permission. All rights reserved. © 2014 ANSYS, Inc. May 19, 2014 
Discharge Path Simulation 
PCB and ESD Source Modeling(HFSS)
13 
SL Corporation Confidential. 
The Contents may only be passed on, used or made known with our express permission. All rights reserved. © 2014 ANSYS, Inc. May 19, 2014 
Discharge Path Simulation 
Analysis Summary and Test Case 
• Analyzing Mode : HFSS Transient Solver 
• Analyzing Time : ~24 hours with 12 CPU(3GHz) 
• Test Case 
1. Without RLC : bare PCB without any component 
2. With RLC : only R/L/C modeled with Lumped RLC 
• Analyzing Mode : SIwave Frequency sweep 
• Test Case 
1. With RLC
14 
SL Corporation Confidential. 
The Contents may only be passed on, used or made known with our express permission. All rights reserved. © 2014 ANSYS, Inc. May 19, 2014 
Discharge Path Simulation
15 
SL Corporation Confidential. 
The Contents may only be passed on, used or made known with our express permission. All rights reserved. © 2014 ANSYS, Inc. May 19, 2014 
Discharge Path Simulation 
1 Layer 
4 Layer 
HFSS No RLC HFSS with RLC
16 
SL Corporation Confidential. 
The Contents may only be passed on, used or made known with our express permission. All rights reserved. © 2014 ANSYS, Inc. May 19, 2014 
Discharge Path Simulation 
HFSS No RLC HFSS with RLC 
3 Layer
17 
SL Corporation Confidential. 
The Contents may only be passed on, used or made known with our express permission. All rights reserved. © 2014 ANSYS, Inc. May 19, 2014 
Discharge Path Simulation 
1 Layer 
4 Layer 
SIwave with RLC LED C output HFSS with RLC
18 
SL Corporation Confidential. 
The Contents may only be passed on, used or made known with our express permission. All rights reserved. © 2014 ANSYS, Inc. May 19, 2014 
Discharge Path Simulation 
SIwave with RLC HFSS with RLC 
3 Layer
19 
SL Corporation Confidential. 
The Contents may only be passed on, used or made known with our express permission. All rights reserved. © 2014 ANSYS, Inc. May 19, 2014 
• We can analyze ESD voltage, current level using 
SIwave & Desinger SI 
– Consider actual load placement / Circuit operation 
• Also reverse voltage characterization similarly occurred 
like the actual situation 
• Prediction of Discharge path with RLC model 
• Future work for HFSS transient(ESD) 
− Add active component characterization 
− Solving Method of big size model 
Summary

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Automotive Electrostatic Discharge Case Study

  • 1. 1 SL Corporation Confidential. The Contents may only be passed on, used or made known with our express permission. All rights reserved. © 2014 ANSYS, Inc. May 19, 2014 Case study of automotive ESD SL corporation Hongkeun Kim
  • 2. 2 SL Corporation Confidential. The Contents may only be passed on, used or made known with our express permission. All rights reserved. © 2014 ANSYS, Inc. May 19, 2014 Background Circuit Design / Challenges Measurements Discharge Path Simulation Summary Outline
  • 3. 3 SL Corporation Confidential. The Contents may only be passed on, used or made known with our express permission. All rights reserved. © 2014 ANSYS, Inc. May 19, 2014 ESD(Electrostatic Discharge) • System of ESD test - Contact Discharge - Non-contact(Air) Discharge Background Sharp point Body of simulator − Case 1. Voltage, Current characteristics when ESD source was excited
  • 4. 4 SL Corporation Confidential. The Contents may only be passed on, used or made known with our express permission. All rights reserved. © 2014 ANSYS, Inc. May 19, 2014 Modeling of ESD Gun ESD Analysis − INTERNATIONAL STANDARD ISO10605 − Byoung-Su Seol, David Prommerenke “A Circuit Model for ESD Performance Analysis of Printed Circuit Boards − For 150pF/330pF 330Ω and 5kV
  • 5. 5 SL Corporation Confidential. The Contents may only be passed on, used or made known with our express permission. All rights reserved. © 2014 ANSYS, Inc. May 19, 2014 Passive Modeling ESD Analysis − Model all passive components with impedance analyzer − To create frequency dependent equivalent network for device CQ1608X7R472K Capacitor Impedance 0.35nH 0.133Ω 4.7nF
  • 6. 6 SL Corporation Confidential. The Contents may only be passed on, used or made known with our express permission. All rights reserved. © 2014 ANSYS, Inc. May 19, 2014 PCB/Circuit Simulation ESD Analysis − End time: 150ns Virtual Load Port PDS5100H S3M Connector
  • 7. 7 SL Corporation Confidential. The Contents may only be passed on, used or made known with our express permission. All rights reserved. © 2014 ANSYS, Inc. May 19, 2014 Voltage Level ESD Analysis − Simulation result of the voltage PDS5100H, S3M anode : PDS5100H : S3M -91V -444V -102V
  • 8. 8 SL Corporation Confidential. The Contents may only be passed on, used or made known with our express permission. All rights reserved. © 2014 ANSYS, Inc. May 19, 2014 Voltage Level ESD Analysis - PDS5100H: There is no margin compared with VRRM - S3M: There is 556V margin compared with VRRM Peak Repetitive Reverse Voltage(VRRM): 100V Peak Repetitive Reverse Voltage(VRRM): 1000V Margin = 556V
  • 9. 9 SL Corporation Confidential. The Contents may only be passed on, used or made known with our express permission. All rights reserved. © 2014 ANSYS, Inc. May 19, 2014 Current Level ESD Analysis − Simulation result of the current PDS5100H, S3M cathode : PDS5100H : S3M -5V -42A
  • 10. 10 SL Corporation Confidential. The Contents may only be passed on, used or made known with our express permission. All rights reserved. © 2014 ANSYS, Inc. May 19, 2014 2.5D PCB Simulation ESD Analysis
  • 11. 11 SL Corporation Confidential. The Contents may only be passed on, used or made known with our express permission. All rights reserved. © 2014 ANSYS, Inc. May 19, 2014 2.5D PCB Simulation ESD Analysis − Reverse Voltage occurred in Schottky Diode.(50, 60, 242, 289MHz) [PDS5100H] [S3M] 50MHz 60MHz 7.4E-01V 2.6E-01V 3.7E-01V 7.0E-02V 7.9E-03V 6.8E-01V 6.8E-03V 5.3E-01V
  • 12. 12 SL Corporation Confidential. The Contents may only be passed on, used or made known with our express permission. All rights reserved. © 2014 ANSYS, Inc. May 19, 2014 Discharge Path Simulation PCB and ESD Source Modeling(HFSS)
  • 13. 13 SL Corporation Confidential. The Contents may only be passed on, used or made known with our express permission. All rights reserved. © 2014 ANSYS, Inc. May 19, 2014 Discharge Path Simulation Analysis Summary and Test Case • Analyzing Mode : HFSS Transient Solver • Analyzing Time : ~24 hours with 12 CPU(3GHz) • Test Case 1. Without RLC : bare PCB without any component 2. With RLC : only R/L/C modeled with Lumped RLC • Analyzing Mode : SIwave Frequency sweep • Test Case 1. With RLC
  • 14. 14 SL Corporation Confidential. The Contents may only be passed on, used or made known with our express permission. All rights reserved. © 2014 ANSYS, Inc. May 19, 2014 Discharge Path Simulation
  • 15. 15 SL Corporation Confidential. The Contents may only be passed on, used or made known with our express permission. All rights reserved. © 2014 ANSYS, Inc. May 19, 2014 Discharge Path Simulation 1 Layer 4 Layer HFSS No RLC HFSS with RLC
  • 16. 16 SL Corporation Confidential. The Contents may only be passed on, used or made known with our express permission. All rights reserved. © 2014 ANSYS, Inc. May 19, 2014 Discharge Path Simulation HFSS No RLC HFSS with RLC 3 Layer
  • 17. 17 SL Corporation Confidential. The Contents may only be passed on, used or made known with our express permission. All rights reserved. © 2014 ANSYS, Inc. May 19, 2014 Discharge Path Simulation 1 Layer 4 Layer SIwave with RLC LED C output HFSS with RLC
  • 18. 18 SL Corporation Confidential. The Contents may only be passed on, used or made known with our express permission. All rights reserved. © 2014 ANSYS, Inc. May 19, 2014 Discharge Path Simulation SIwave with RLC HFSS with RLC 3 Layer
  • 19. 19 SL Corporation Confidential. The Contents may only be passed on, used or made known with our express permission. All rights reserved. © 2014 ANSYS, Inc. May 19, 2014 • We can analyze ESD voltage, current level using SIwave & Desinger SI – Consider actual load placement / Circuit operation • Also reverse voltage characterization similarly occurred like the actual situation • Prediction of Discharge path with RLC model • Future work for HFSS transient(ESD) − Add active component characterization − Solving Method of big size model Summary