This document summarizes the results of a Monte Carlo simulation comparing electron transport properties in GaSb and GaAs semiconductors at high electric fields. The simulation includes nonparabolic band structures, acoustic and polar optical phonon scattering, and ionized impurity scattering. It finds that GaAs has a higher peak electron drift velocity of around 2.2x105 m/s compared to 1.2x105 m/s for GaSb. Both materials show velocity saturation at high fields due to increased intervalley scattering. Temperature is also found to decrease peak velocity and increase the critical field for velocity overshoot.
International Journal of Engineering Research and Applications (IJERA) is an open access online peer reviewed international journal that publishes research and review articles in the fields of Computer Science, Neural Networks, Electrical Engineering, Software Engineering, Information Technology, Mechanical Engineering, Chemical Engineering, Plastic Engineering, Food Technology, Textile Engineering, Nano Technology & science, Power Electronics, Electronics & Communication Engineering, Computational mathematics, Image processing, Civil Engineering, Structural Engineering, Environmental Engineering, VLSI Testing & Low Power VLSI Design etc.
International Journal of Engineering Research and Applications (IJERA) is an open access online peer reviewed international journal that publishes research and review articles in the fields of Computer Science, Neural Networks, Electrical Engineering, Software Engineering, Information Technology, Mechanical Engineering, Chemical Engineering, Plastic Engineering, Food Technology, Textile Engineering, Nano Technology & science, Power Electronics, Electronics & Communication Engineering, Computational mathematics, Image processing, Civil Engineering, Structural Engineering, Environmental Engineering, VLSI Testing & Low Power VLSI Design etc.
Analysis of Electric Circuit Model on Atmospheric Pressure Dielectric Barrier...AM Publications
Analysis of Electric Circuit Model on Atmospheric Pressure Dielectric Barrier Discharge (DBD) Plasma has been simulated using the Simulink-Matlab R2010a software. Plasma reactor being used as the basis to determine the parameters in the circuit is in the coaxial form made of pyrex glass with an iron rod as the active electrode and spiral copper wire as passive electrode. The reactor was filled with argon gas with the flow rate of 2 L/s. Simulation circuit model which was prepared based on a DBD equivalent circuit, operated in a voltage range of 1.0 kV to 6.0 kV for frequency of 10 kHz to 66 kHz. Electrical characterization was performed to describe the plasma discharge that occurs in the reactor. The datas of supply voltage and current, as well as voltage and current discharge, was used to determine the average power during one period. From the simulation was obtained an increase in supply and discharge currents with increasing of frequency at the same operating voltage. Discharge power has increased in a specific voltage and increased frequency. It is obtained the average discharge power for 5.5 kV of 11.28 W and 10.90 W at a frequency of 21 kHz and 24 kHz, respectively. The highest efficiency obtained from the simulation that achieved at voltage of 1 kV and frequency of 45.7 kHz is equal to 56.59%.
This document provides a review of High Electron Mobility Transistors (HEMTs). It discusses the motivation for developing HEMTs due to limitations of silicon MOSFETs and III-V MESFETs. The basic working principles of HEMTs are presented using the AlGaAs/GaAs material system, including the formation of a two-dimensional electron gas (2DEG) at the heterojunction interface which provides high electron mobility. Early developments of HEMTs in the 1980s by researchers at institutions including Fujitsu, Bell Labs, and the University of Illinois are summarized. More recent developments involving GaN HEMTs and MOSHEMT structures are also reviewed.
Jack Huang interned at AFRL/RQQE Energy Sciences Facility, where he studied gas breakdown and Paschen's Law under Dr. Steve Adams and others. His project involved collecting experimental data on the breakdown voltage of argon gas between electrode discs at varying pressures and distances. The data showed some agreement with Paschen's theoretical curve at lower pressure-distance values but diverged at higher values. Improving the computer model of gas breakdown and automating data collection were next steps. Huang gained experience in plasma physics research and appreciated the opportunity to contribute to an ongoing project.
International Journal of Engineering Research and Applications (IJERA) is a team of researchers not publication services or private publications running the journals for monetary benefits, we are association of scientists and academia who focus only on supporting authors who want to publish their work. The articles published in our journal can be accessed online, all the articles will be archived for real time access.
Our journal system primarily aims to bring out the research talent and the works done by sciaentists, academia, engineers, practitioners, scholars, post graduate students of engineering and science. This journal aims to cover the scientific research in a broader sense and not publishing a niche area of research facilitating researchers from various verticals to publish their papers. It is also aimed to provide a platform for the researchers to publish in a shorter of time, enabling them to continue further All articles published are freely available to scientific researchers in the Government agencies,educators and the general public. We are taking serious efforts to promote our journal across the globe in various ways, we are sure that our journal will act as a scientific platform for all researchers to publish their works online.
Quantum transport in semiconductor nanostructuressamrat saurabh
This document discusses quantum transport in semiconductor nanostructures. It begins by providing background on semiconductors, including their electrical properties between conductors and insulators. When sized below a certain limit, nanostructures constructed from semiconductors exhibit new electronic and optical properties due to quantization effects. An example is a quantum dot formed from a semiconductor with 5-10nm thickness. The document then discusses different types of quantum transport, including diffusive and ballistic transport, and provides examples of applications of semiconductor nanostructures in areas like lasers and quantum computing.
Electric potential gradient fractal dimension for characterizing shajara rese...Khalid Al-Khidir
1. The document analyzes fractal dimensions derived from electric potential gradient and capillary pressure measurements on sandstone samples from the Shajara Formation in Saudi Arabia.
2. Equations relating wetting phase saturation, electric potential gradient, maximum gradient, and fractal dimension were developed and used to calculate fractal dimension from log-log plots. Fractal dimension was also calculated from the relationship between capillary pressure and wetting phase saturation.
3. Results showed that the electric potential gradient fractal dimension was equal to the capillary pressure fractal dimension. Higher fractal dimensions correlated with higher permeability and were found in the Upper Shajara Reservoir units, indicating more heterogeneous and interconnected pore spaces.
International Journal of Engineering Research and Applications (IJERA) is an open access online peer reviewed international journal that publishes research and review articles in the fields of Computer Science, Neural Networks, Electrical Engineering, Software Engineering, Information Technology, Mechanical Engineering, Chemical Engineering, Plastic Engineering, Food Technology, Textile Engineering, Nano Technology & science, Power Electronics, Electronics & Communication Engineering, Computational mathematics, Image processing, Civil Engineering, Structural Engineering, Environmental Engineering, VLSI Testing & Low Power VLSI Design etc.
International Journal of Engineering Research and Applications (IJERA) is an open access online peer reviewed international journal that publishes research and review articles in the fields of Computer Science, Neural Networks, Electrical Engineering, Software Engineering, Information Technology, Mechanical Engineering, Chemical Engineering, Plastic Engineering, Food Technology, Textile Engineering, Nano Technology & science, Power Electronics, Electronics & Communication Engineering, Computational mathematics, Image processing, Civil Engineering, Structural Engineering, Environmental Engineering, VLSI Testing & Low Power VLSI Design etc.
Analysis of Electric Circuit Model on Atmospheric Pressure Dielectric Barrier...AM Publications
Analysis of Electric Circuit Model on Atmospheric Pressure Dielectric Barrier Discharge (DBD) Plasma has been simulated using the Simulink-Matlab R2010a software. Plasma reactor being used as the basis to determine the parameters in the circuit is in the coaxial form made of pyrex glass with an iron rod as the active electrode and spiral copper wire as passive electrode. The reactor was filled with argon gas with the flow rate of 2 L/s. Simulation circuit model which was prepared based on a DBD equivalent circuit, operated in a voltage range of 1.0 kV to 6.0 kV for frequency of 10 kHz to 66 kHz. Electrical characterization was performed to describe the plasma discharge that occurs in the reactor. The datas of supply voltage and current, as well as voltage and current discharge, was used to determine the average power during one period. From the simulation was obtained an increase in supply and discharge currents with increasing of frequency at the same operating voltage. Discharge power has increased in a specific voltage and increased frequency. It is obtained the average discharge power for 5.5 kV of 11.28 W and 10.90 W at a frequency of 21 kHz and 24 kHz, respectively. The highest efficiency obtained from the simulation that achieved at voltage of 1 kV and frequency of 45.7 kHz is equal to 56.59%.
This document provides a review of High Electron Mobility Transistors (HEMTs). It discusses the motivation for developing HEMTs due to limitations of silicon MOSFETs and III-V MESFETs. The basic working principles of HEMTs are presented using the AlGaAs/GaAs material system, including the formation of a two-dimensional electron gas (2DEG) at the heterojunction interface which provides high electron mobility. Early developments of HEMTs in the 1980s by researchers at institutions including Fujitsu, Bell Labs, and the University of Illinois are summarized. More recent developments involving GaN HEMTs and MOSHEMT structures are also reviewed.
Jack Huang interned at AFRL/RQQE Energy Sciences Facility, where he studied gas breakdown and Paschen's Law under Dr. Steve Adams and others. His project involved collecting experimental data on the breakdown voltage of argon gas between electrode discs at varying pressures and distances. The data showed some agreement with Paschen's theoretical curve at lower pressure-distance values but diverged at higher values. Improving the computer model of gas breakdown and automating data collection were next steps. Huang gained experience in plasma physics research and appreciated the opportunity to contribute to an ongoing project.
International Journal of Engineering Research and Applications (IJERA) is a team of researchers not publication services or private publications running the journals for monetary benefits, we are association of scientists and academia who focus only on supporting authors who want to publish their work. The articles published in our journal can be accessed online, all the articles will be archived for real time access.
Our journal system primarily aims to bring out the research talent and the works done by sciaentists, academia, engineers, practitioners, scholars, post graduate students of engineering and science. This journal aims to cover the scientific research in a broader sense and not publishing a niche area of research facilitating researchers from various verticals to publish their papers. It is also aimed to provide a platform for the researchers to publish in a shorter of time, enabling them to continue further All articles published are freely available to scientific researchers in the Government agencies,educators and the general public. We are taking serious efforts to promote our journal across the globe in various ways, we are sure that our journal will act as a scientific platform for all researchers to publish their works online.
Quantum transport in semiconductor nanostructuressamrat saurabh
This document discusses quantum transport in semiconductor nanostructures. It begins by providing background on semiconductors, including their electrical properties between conductors and insulators. When sized below a certain limit, nanostructures constructed from semiconductors exhibit new electronic and optical properties due to quantization effects. An example is a quantum dot formed from a semiconductor with 5-10nm thickness. The document then discusses different types of quantum transport, including diffusive and ballistic transport, and provides examples of applications of semiconductor nanostructures in areas like lasers and quantum computing.
Electric potential gradient fractal dimension for characterizing shajara rese...Khalid Al-Khidir
1. The document analyzes fractal dimensions derived from electric potential gradient and capillary pressure measurements on sandstone samples from the Shajara Formation in Saudi Arabia.
2. Equations relating wetting phase saturation, electric potential gradient, maximum gradient, and fractal dimension were developed and used to calculate fractal dimension from log-log plots. Fractal dimension was also calculated from the relationship between capillary pressure and wetting phase saturation.
3. Results showed that the electric potential gradient fractal dimension was equal to the capillary pressure fractal dimension. Higher fractal dimensions correlated with higher permeability and were found in the Upper Shajara Reservoir units, indicating more heterogeneous and interconnected pore spaces.
Effect of voltage on multiple particles and collisions in a single Phase Gas ...IJERA Editor
20% of failures in Gas Insulated Substations are due to the existence of various metallic contaminations in the
form of loose particles. In this paper a single Phase Gas Insulated Bus duct with inner diameter conductor
55mm and diameter of enclosure 150 mm is considered. Three particles of different sizes assumed to be rest at a
position, Power frequency voltages of 100 kV, 132 kV ,145 and 200 kV are applied to single Phase GIS bus.
The motion of the three particles is simulated for different voltages using MATLAB. Effect of the three particles
for power frequency voltage on particle movement are analyzed and time of collisions of the particle at first time
is determined for various voltages. And also the horizontal and vertical distances at which the particles collide
are determined for Particles of aluminum and copper of 10 mm in length and 0.25 mm radius, 10 mm length
and 0.15 mm radius and 7 mm and 0.25 radii. The max displacement of the particles when each particle at a time
is considered (without collision) are compared with the max radial displacements of three particles at a time by
considering the collisions. The results show that the three particle collide at different points depending on the
particles position , the velocity and direction of the particle changes after collisions.. The results show that the
max displacement of particles is higher due to collisions as compared with (without collisions) when each
particle at a time is considered.
This document summarizes research investigating graphene/cerium oxide nanoparticles as an electrode material for supercapacitors. Scanning electron microscopy images showed the layered structure of graphene with cerium oxide nanoparticles dispersed across the surface. Electrochemical testing found the electrode achieved a maximum specific capacitance of 11.09 F g−1 in 3 M NaCl electrolyte. Charge/discharge cycling showed good reversibility and 37% increase in capacitance after 500 cycles. The graphene/cerium oxide composite performed better than cerium oxide alone due to graphene's conductivity and the formation of an electrical double layer at the electrode interface.
Горбунов Н.А., Государственная морская академия им. С.О. Макарова, г. Санкт-Петербург
Разработка плазменных технологий для прямого фотоэлектрического преобразования с сфокусированного солнечного излучения
This document presents a thesis analyzing the stability margin of superconducting cables for the High Luminosity Large Hadron Collider (HiLumi-LHC) project at CERN. It uses both zero-dimensional and one-dimensional numerical models to simulate the electro-thermal behavior of Nb3Sn cables during a quench induced by beam losses. The results show the quench energy for the Nb3Sn inner triplet quadrupole magnet is significantly different than for the existing NbTi magnets. Comparisons with NbTi cables highlight differences in quench performance between impregnated Nb3Sn cables and non-impregnated NbTi cables in their typical operating conditions.
International Journal of Engineering Research and Applications (IJERA) is an open access online peer reviewed international journal that publishes research and review articles in the fields of Computer Science, Neural Networks, Electrical Engineering, Software Engineering, Information Technology, Mechanical Engineering, Chemical Engineering, Plastic Engineering, Food Technology, Textile Engineering, Nano Technology & science, Power Electronics, Electronics & Communication Engineering, Computational mathematics, Image processing, Civil Engineering, Structural Engineering, Environmental Engineering, VLSI Testing & Low Power VLSI Design etc.
- The document discusses an undergraduate investigation using point contact spectroscopy (PCS) to study quantum criticality in materials. PCS has traditionally been used to determine scattering information in metals and energy gaps in superconductors. A recent theory suggests PCS may also detect non-Fermi liquid behavior associated with quantum criticality.
- The investigation began by using PCS to study the superconductor FeTe0.55Se0.45 to establish ballistic contacts. It then aimed to use PCS to search for signatures of quantum fluctuations in the quantum critical material YFe2Al10 above the superconductor's critical temperature. This may provide evidence for detecting quantum critical behavior through PCS.
Effect of Dew and Raindrops on Electric Field around EHV Transmission LinesTELKOMNIKA JOURNAL
This paper analyses the change of electric field in the proximity of 500 kV extra high voltage
(EHV) transmission lines, in the presence of raindrops and dew. The computations were carried out using
MatLab software by solving the electrostatic equations. The analysis depicts that the spatial distribution of
the electric field strength varies with water drop content along the lateral distance along the transmiss ion
line. The peak electric field reduces with the water drop content, whereas the electric field remains the
same at around 36 m from the transmission line. Then onwards the field strength increases with the water
drop content. At long distances the field strength is not affected by the water drops. Such variation is highly
important to analyse the adverse effects on the insulators used in HV applications. The results are of high
significance to a country such as Indonesia where the precipitation levels are generally high in most parts
of the country.
International Journal of Engineering Research and Applications (IJERA) is an open access online peer reviewed international journal that publishes research and review articles in the fields of Computer Science, Neural Networks, Electrical Engineering, Software Engineering, Information Technology, Mechanical Engineering, Chemical Engineering, Plastic Engineering, Food Technology, Textile Engineering, Nano Technology & science, Power Electronics, Electronics & Communication Engineering, Computational mathematics, Image processing, Civil Engineering, Structural Engineering, Environmental Engineering, VLSI Testing & Low Power VLSI Design etc.
This document discusses using density functional theory with different basis sets (Gaussian, plane waves, numerical) to calculate exchange coupling constants in transition metal complexes. It compares the accuracy and reliability of these approaches by calculating exchange coupling constants and spin distributions for three test complexes. The plane wave and numerical basis set approaches are found to be accurate alternatives to the more established Gaussian basis functions for calculating these properties, while also allowing for larger system sizes to be studied. Pseudopotentials are also found to not significantly affect the calculation of exchange coupling constants.
International Journal of Engineering Research and Applications (IJERA) is an open access online peer reviewed international journal that publishes research and review articles in the fields of Computer Science, Neural Networks, Electrical Engineering, Software Engineering, Information Technology, Mechanical Engineering, Chemical Engineering, Plastic Engineering, Food Technology, Textile Engineering, Nano Technology & science, Power Electronics, Electronics & Communication Engineering, Computational mathematics, Image processing, Civil Engineering, Structural Engineering, Environmental Engineering, VLSI Testing & Low Power VLSI Design etc.
The effect of reduced pressure acetylene plasma treatment on physical charact...inventy
The capacitors are increasingly being used as energy storage devicesin various power systems. The scientists of the world are tryingto maximize the electrical capacity of the supercapacitors. To achieve this purpose, numerous method sare used: the surface activation of electrodes, the surface etching using the electronbeam, the electrode etching with variousgasplasma, etc. The purpose of this work is toresearch how the properties of carbon electrodes depend on the plasma parameters at whichtheywere formed. The largest surface area ofcarbonelectrodeof47.25m2 /gis obtainedat 15 ofAr/C2H2gasratio. Meanwhile, theSEMimages show that the disruption of structures with low bond energies and the formation of new onesare taking place when the carbon electrodes are etched at acetylene plasma and placed on carbon electrode. The measurements of capacitance showthat capacitors with affectedelectrodes have about10-15% highercapacity than those not treated with acetyleneplasma.
This document summarizes research into using laser excitation to enhance the production of cesium ions in thermionic energy converters (TECs). The researchers have developed a particle-in-cell model of a planar diode discharge to simulate TEC performance with and without laser ionization. They have also designed a laboratory test cell to experimentally validate the effect of laser excitation on TEC current-voltage characteristics. Future work will include refining the models, procuring parts for the test cell, and conducting experimental studies to characterize optimized TEC performance with optical modulation. The goal is to increase TEC efficiency for applications in solar and combustion energy systems to reduce greenhouse gas emissions.
This presentation discusses electrical resistivity methods for geophysical surveying. It describes how resistivity utilizes differences in electric potential to image the subsurface. Key concepts covered include Ohm's law, electrode configurations like Wenner and Schlumberger arrays, methods like vertical electrical sounding and electric profiling, and instrumentation used including current sources, resistivity meters, and electrode types. Applications mentioned are groundwater detection, mineral exploration, and waste exploration.
Gold nanorods have potential for photothermal cancer therapy. When exposed to laser light near their surface plasmon resonance wavelengths, gold nanorods efficiently absorb light and generate heat through electron oscillations. Smaller nanorods absorb shorter wavelengths. Nanorods have transverse and longitudinal surface plasmon resonances depending on their aspect ratio. Their strong light absorption and efficient conversion to heat makes them suitable for using mild hyperthermia to selectively destroy tumors through plasmonic photothermal therapy.
This document summarizes research on the electronic structure of aluminum nitride (AlN) through theoretical calculations and vacuum ultraviolet spectroscopy experiments. Key findings include:
1) The experimental results show features at 8.7 eV and 14 eV associated with two-dimensional critical points related to electronic transitions.
2) Theoretical calculations using density functional theory predict a direct bandgap at the gamma point of 4.5 eV, lower than the experimental value of 6.3 eV, as is common for DFT.
3) Both experiment and theory were modeled using sets of critical points, with good agreement between predicted and observed energies for transitions between nitrogen 2p and aluminum 3s states, and some discrepancy for higher-
Este documento contrasta la comunicación oral y escrita. En la comunicación oral, emisor y receptor comparten el mismo entorno espacio-temporal y pueden usar gestos, entonación y otras señales para resolver ambigüedades. La comunicación escrita es diferida en el tiempo y el espacio, por lo que el texto debe definir constantemente el contexto y el autor debe imaginar a sus lectores.
We looked at the data. Here’s a breakdown of some key statistics about the nation’s incoming presidents’ addresses, how long they spoke, how well, and more.
The document discusses how startup entrepreneurs think and operate. It notes that startups like Airbnb and Uber were started due to identifying shortages or problems. It emphasizes that startups focus on providing customer benefit, eliminating waste, and creating value. It also highlights that startups operate with speed, embracing failure fast and pivoting quickly, with transparency and by breaking rules. Startups succeed by moving rapidly, with minimal processes and instead prioritizing speed above all else.
32 Ways a Digital Marketing Consultant Can Help Grow Your BusinessBarry Feldman
How can a digital marketing consultant help your business? In this resource we'll count the ways. 24 additional marketing resources are bundled for free.
This document discusses how emojis, emoticons, and text speak can be used to teach students. It provides background on the origins of emoticons in 1982 as ways to convey tone and feelings in text communications. It then suggests that with text speak and emojis, students can translate, decode, summarize, play with language, and add emotion to language. A number of websites and apps that can be used for emoji-related activities, lessons, and discussions are also listed.
Effect of voltage on multiple particles and collisions in a single Phase Gas ...IJERA Editor
20% of failures in Gas Insulated Substations are due to the existence of various metallic contaminations in the
form of loose particles. In this paper a single Phase Gas Insulated Bus duct with inner diameter conductor
55mm and diameter of enclosure 150 mm is considered. Three particles of different sizes assumed to be rest at a
position, Power frequency voltages of 100 kV, 132 kV ,145 and 200 kV are applied to single Phase GIS bus.
The motion of the three particles is simulated for different voltages using MATLAB. Effect of the three particles
for power frequency voltage on particle movement are analyzed and time of collisions of the particle at first time
is determined for various voltages. And also the horizontal and vertical distances at which the particles collide
are determined for Particles of aluminum and copper of 10 mm in length and 0.25 mm radius, 10 mm length
and 0.15 mm radius and 7 mm and 0.25 radii. The max displacement of the particles when each particle at a time
is considered (without collision) are compared with the max radial displacements of three particles at a time by
considering the collisions. The results show that the three particle collide at different points depending on the
particles position , the velocity and direction of the particle changes after collisions.. The results show that the
max displacement of particles is higher due to collisions as compared with (without collisions) when each
particle at a time is considered.
This document summarizes research investigating graphene/cerium oxide nanoparticles as an electrode material for supercapacitors. Scanning electron microscopy images showed the layered structure of graphene with cerium oxide nanoparticles dispersed across the surface. Electrochemical testing found the electrode achieved a maximum specific capacitance of 11.09 F g−1 in 3 M NaCl electrolyte. Charge/discharge cycling showed good reversibility and 37% increase in capacitance after 500 cycles. The graphene/cerium oxide composite performed better than cerium oxide alone due to graphene's conductivity and the formation of an electrical double layer at the electrode interface.
Горбунов Н.А., Государственная морская академия им. С.О. Макарова, г. Санкт-Петербург
Разработка плазменных технологий для прямого фотоэлектрического преобразования с сфокусированного солнечного излучения
This document presents a thesis analyzing the stability margin of superconducting cables for the High Luminosity Large Hadron Collider (HiLumi-LHC) project at CERN. It uses both zero-dimensional and one-dimensional numerical models to simulate the electro-thermal behavior of Nb3Sn cables during a quench induced by beam losses. The results show the quench energy for the Nb3Sn inner triplet quadrupole magnet is significantly different than for the existing NbTi magnets. Comparisons with NbTi cables highlight differences in quench performance between impregnated Nb3Sn cables and non-impregnated NbTi cables in their typical operating conditions.
International Journal of Engineering Research and Applications (IJERA) is an open access online peer reviewed international journal that publishes research and review articles in the fields of Computer Science, Neural Networks, Electrical Engineering, Software Engineering, Information Technology, Mechanical Engineering, Chemical Engineering, Plastic Engineering, Food Technology, Textile Engineering, Nano Technology & science, Power Electronics, Electronics & Communication Engineering, Computational mathematics, Image processing, Civil Engineering, Structural Engineering, Environmental Engineering, VLSI Testing & Low Power VLSI Design etc.
- The document discusses an undergraduate investigation using point contact spectroscopy (PCS) to study quantum criticality in materials. PCS has traditionally been used to determine scattering information in metals and energy gaps in superconductors. A recent theory suggests PCS may also detect non-Fermi liquid behavior associated with quantum criticality.
- The investigation began by using PCS to study the superconductor FeTe0.55Se0.45 to establish ballistic contacts. It then aimed to use PCS to search for signatures of quantum fluctuations in the quantum critical material YFe2Al10 above the superconductor's critical temperature. This may provide evidence for detecting quantum critical behavior through PCS.
Effect of Dew and Raindrops on Electric Field around EHV Transmission LinesTELKOMNIKA JOURNAL
This paper analyses the change of electric field in the proximity of 500 kV extra high voltage
(EHV) transmission lines, in the presence of raindrops and dew. The computations were carried out using
MatLab software by solving the electrostatic equations. The analysis depicts that the spatial distribution of
the electric field strength varies with water drop content along the lateral distance along the transmiss ion
line. The peak electric field reduces with the water drop content, whereas the electric field remains the
same at around 36 m from the transmission line. Then onwards the field strength increases with the water
drop content. At long distances the field strength is not affected by the water drops. Such variation is highly
important to analyse the adverse effects on the insulators used in HV applications. The results are of high
significance to a country such as Indonesia where the precipitation levels are generally high in most parts
of the country.
International Journal of Engineering Research and Applications (IJERA) is an open access online peer reviewed international journal that publishes research and review articles in the fields of Computer Science, Neural Networks, Electrical Engineering, Software Engineering, Information Technology, Mechanical Engineering, Chemical Engineering, Plastic Engineering, Food Technology, Textile Engineering, Nano Technology & science, Power Electronics, Electronics & Communication Engineering, Computational mathematics, Image processing, Civil Engineering, Structural Engineering, Environmental Engineering, VLSI Testing & Low Power VLSI Design etc.
This document discusses using density functional theory with different basis sets (Gaussian, plane waves, numerical) to calculate exchange coupling constants in transition metal complexes. It compares the accuracy and reliability of these approaches by calculating exchange coupling constants and spin distributions for three test complexes. The plane wave and numerical basis set approaches are found to be accurate alternatives to the more established Gaussian basis functions for calculating these properties, while also allowing for larger system sizes to be studied. Pseudopotentials are also found to not significantly affect the calculation of exchange coupling constants.
International Journal of Engineering Research and Applications (IJERA) is an open access online peer reviewed international journal that publishes research and review articles in the fields of Computer Science, Neural Networks, Electrical Engineering, Software Engineering, Information Technology, Mechanical Engineering, Chemical Engineering, Plastic Engineering, Food Technology, Textile Engineering, Nano Technology & science, Power Electronics, Electronics & Communication Engineering, Computational mathematics, Image processing, Civil Engineering, Structural Engineering, Environmental Engineering, VLSI Testing & Low Power VLSI Design etc.
The effect of reduced pressure acetylene plasma treatment on physical charact...inventy
The capacitors are increasingly being used as energy storage devicesin various power systems. The scientists of the world are tryingto maximize the electrical capacity of the supercapacitors. To achieve this purpose, numerous method sare used: the surface activation of electrodes, the surface etching using the electronbeam, the electrode etching with variousgasplasma, etc. The purpose of this work is toresearch how the properties of carbon electrodes depend on the plasma parameters at whichtheywere formed. The largest surface area ofcarbonelectrodeof47.25m2 /gis obtainedat 15 ofAr/C2H2gasratio. Meanwhile, theSEMimages show that the disruption of structures with low bond energies and the formation of new onesare taking place when the carbon electrodes are etched at acetylene plasma and placed on carbon electrode. The measurements of capacitance showthat capacitors with affectedelectrodes have about10-15% highercapacity than those not treated with acetyleneplasma.
This document summarizes research into using laser excitation to enhance the production of cesium ions in thermionic energy converters (TECs). The researchers have developed a particle-in-cell model of a planar diode discharge to simulate TEC performance with and without laser ionization. They have also designed a laboratory test cell to experimentally validate the effect of laser excitation on TEC current-voltage characteristics. Future work will include refining the models, procuring parts for the test cell, and conducting experimental studies to characterize optimized TEC performance with optical modulation. The goal is to increase TEC efficiency for applications in solar and combustion energy systems to reduce greenhouse gas emissions.
This presentation discusses electrical resistivity methods for geophysical surveying. It describes how resistivity utilizes differences in electric potential to image the subsurface. Key concepts covered include Ohm's law, electrode configurations like Wenner and Schlumberger arrays, methods like vertical electrical sounding and electric profiling, and instrumentation used including current sources, resistivity meters, and electrode types. Applications mentioned are groundwater detection, mineral exploration, and waste exploration.
Gold nanorods have potential for photothermal cancer therapy. When exposed to laser light near their surface plasmon resonance wavelengths, gold nanorods efficiently absorb light and generate heat through electron oscillations. Smaller nanorods absorb shorter wavelengths. Nanorods have transverse and longitudinal surface plasmon resonances depending on their aspect ratio. Their strong light absorption and efficient conversion to heat makes them suitable for using mild hyperthermia to selectively destroy tumors through plasmonic photothermal therapy.
This document summarizes research on the electronic structure of aluminum nitride (AlN) through theoretical calculations and vacuum ultraviolet spectroscopy experiments. Key findings include:
1) The experimental results show features at 8.7 eV and 14 eV associated with two-dimensional critical points related to electronic transitions.
2) Theoretical calculations using density functional theory predict a direct bandgap at the gamma point of 4.5 eV, lower than the experimental value of 6.3 eV, as is common for DFT.
3) Both experiment and theory were modeled using sets of critical points, with good agreement between predicted and observed energies for transitions between nitrogen 2p and aluminum 3s states, and some discrepancy for higher-
Este documento contrasta la comunicación oral y escrita. En la comunicación oral, emisor y receptor comparten el mismo entorno espacio-temporal y pueden usar gestos, entonación y otras señales para resolver ambigüedades. La comunicación escrita es diferida en el tiempo y el espacio, por lo que el texto debe definir constantemente el contexto y el autor debe imaginar a sus lectores.
We looked at the data. Here’s a breakdown of some key statistics about the nation’s incoming presidents’ addresses, how long they spoke, how well, and more.
The document discusses how startup entrepreneurs think and operate. It notes that startups like Airbnb and Uber were started due to identifying shortages or problems. It emphasizes that startups focus on providing customer benefit, eliminating waste, and creating value. It also highlights that startups operate with speed, embracing failure fast and pivoting quickly, with transparency and by breaking rules. Startups succeed by moving rapidly, with minimal processes and instead prioritizing speed above all else.
32 Ways a Digital Marketing Consultant Can Help Grow Your BusinessBarry Feldman
How can a digital marketing consultant help your business? In this resource we'll count the ways. 24 additional marketing resources are bundled for free.
This document discusses how emojis, emoticons, and text speak can be used to teach students. It provides background on the origins of emoticons in 1982 as ways to convey tone and feelings in text communications. It then suggests that with text speak and emojis, students can translate, decode, summarize, play with language, and add emotion to language. A number of websites and apps that can be used for emoji-related activities, lessons, and discussions are also listed.
Artificial intelligence (AI) is everywhere, promising self-driving cars, medical breakthroughs, and new ways of working. But how do you separate hype from reality? How can your company apply AI to solve real business problems?
Here’s what AI learnings your business should keep in mind for 2017.
International Journal of Engineering Research and Applications (IJERA) is an open access online peer reviewed international journal that publishes research and review articles in the fields of Computer Science, Neural Networks, Electrical Engineering, Software Engineering, Information Technology, Mechanical Engineering, Chemical Engineering, Plastic Engineering, Food Technology, Textile Engineering, Nano Technology & science, Power Electronics, Electronics & Communication Engineering, Computational mathematics, Image processing, Civil Engineering, Structural Engineering, Environmental Engineering, VLSI Testing & Low Power VLSI Design etc.
Electronic bands structure and gap in mid-infrared detector InAs/GaSb type II...IJERA Editor
We present here theoretical study of the electronic bands structure E (d1) of InAs (d1=25 Å)/GaSb (d2=25 Å) type
II superlattice at 4.2 K performed in the envelope function formalism. We study the effect of d1 and the offset ,
between heavy holes bands edges of InAs and GaSb, on the band gap Eg (), at the center of the first Brillouin
zone, and the semiconductor-to-semimetal transition. Eg (, T) decreases from 288.7 meV at 4.2 K to 230 meV
at 300K. In the investigated temperature range, the cut-off wavelength 4.3 m ≤ c ≤ 5.4 m situates this sample
as mid-wavelength infrared detector (MWIR). Our results are in good agreement with the experimental data
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1. M. Abedzadeh Feyzabadi Int. Journal of Engineering Research and Application
ISSN : 2248-9622, Vol. 3, Issue 5, Sep-Oct 2013, pp.750-753
RESEARCH ARTICLE
www.ijera.com
OPEN ACCESS
High Field Electron Mobility In Gaas In Comparison With Gasb
M. Abedzadeh Feyzabadi
Physics Department, Payame Nour University of Fariman, Fariman, Iran
Abstract
Electron transport properties in GaSb and GaAs are calculated for different temperature, doping dependencies at
high electric field applications. The calculations are performed using a three valleys ensemble Monte Carlo
model that includes numerical formulations of the phonon scattering rates and ionized impurity scattering rates.
For two materials, we find that electron velocity overshoot only occurs when the electric field in increased to a
value above a certain critical field .This critical field is strongly dependent on the material parameters. Results
from the two materials are finally compared. The agreement with the available experimental data is found to be
satisfactory.
Keywords-: Monte Carlo method; ionized impurity scattering; overshoot velocity.
I.
INTRODUCTION
GaSb and GaAs semiconductors are
becoming of increasing importance in many
emerging optoelectronic and electronic device
applications. Among these applications are ultraviolet
photodetectors, blue and UV light emitters, and high
frequency, high power electronic devices. As an aid
to the device-related work, the transport coefficients
of the materials need careful investigation. Transport
properties of electrons in GaSb and GaN
semiconductors can be conveniently derived by direct
solution of the Boltzmann equation [1]. Previous
applications of this technique were directed toward
calculations of drift mobility in ideally pure
semiconductors. There is also considerable interest in
accurate descriptions of impure crystals, from both
the experimental and the theoretical points of view.
In the former case, foe example, one may take
advantage of the sensitivity of mobility to ionized
impurities in analyses of impurity content. In the
latter case, highly doped materials allow one to probe
regions of the conduction band in the neighborhood
of the Fermi level, well above the band edge.
Obviously, accurate calculations in conjunction with
experimental data are helpful in exposing weaknesses
of the theoretical model, particularly with regard to
electron scattering by ionized impurities at low
temperatures [2]. The purpose of the present paper is
to calculate electron drift velocity for various
temperatures and ionized-impurity concentrations.
The formulation itself applies only to the central
valley conduction band and the two nearest valleys.
We have also consider band nonparabolicity,
admixture of p-type valence-band wave functions,
degeneracy of the electron distribution to any
arbitrary degree, and the screening effects of free
carriers on the scattering probabilities [3]. All the
relevant scattering mechanisms, including the twomode nature of the polar optic phonon scattering, are
taken into account [4].
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In this communication, we present Monte Carlo
calculations of steady-state electron transport
conditions in GaSb and GaAs [5]. We demonstrate
the effect of injection energy and electric field on the
electron transport properties.
This paper is organized as follows. Details
of the employed simulation model is presented in
section 2 and the results of steady-state electron
transport properties carried out on GaSb and GaAs
structures are interpreted in section 3.
wavelength optical direction. Another advantage of
GaSb is that it provides for type II band alignment in
super lattices and quantum wells when used in
conjunction with the InAs system. Such structures are
being recognized as promising candidates for midinfrared lasers due to the inherent suppression of
internal electron-hole recombination. The Auger rates
have also been shown to be greatly reduced in the
GaSb based super lattices [18-19]. Furthermore, as
the GaSb/InAs share no common cation or anion, one
can fabricate either an InSb-like or a GaAs-like
interface simply by changing the growth sequence.
Different vibrational properties are expected to result
[20], and the electronic properties of the confined
carrier gas are correspondingly affected.
II.
MODEL DETAILS
In order to calculate the electron drift
velocity for large electric fields, consideration of
conduction band satellite valleys is necessary. The
first-principles band structure of zincblende GaSb and
GaAs predicts a direct band gap located at the point
and lowest energy conduction band satellite valleys at
the X point and at the L point. In our Monte Carlo
simulation, the valley, the three equivalent X
valleys, the four equivalent L valleys, are represented
by ellipsoidal, nonparabolic dispersion relationships
of the following form [6],
750 | P a g e
2. M. Abedzadeh Feyzabadi Int. Journal of Engineering Research and Application
ISSN : 2248-9622, Vol. 3, Issue 5, Sep-Oct 2013, pp.750-753
2 k 2
(1)
2m *
where m* is effective mass at the band edge and i is
the non-parabolicity coefficient of the i-th valley.
Scattering mechanisms included in the simulation are
acoustic deformation potential scattering (treated
either as an elastic process or as an inelastic process)
and pizoelectric scattering (which is found to be
negligible in the temperature range discussed here).
Furthermore, longitudinal optical phonon scattering,
nonequivalent and, where applicable, equivalent
intervalley scattering events are taken into account
among all valley types with the transfers assumed to
be governed by the same deformation potential fields
and the same phonon frequencies. Degeneracy effects
are expected to be negligible over almostall of the
temperature and electron concentration ranges of
interest here and, hence, are not considered in the
calculation. In our model at the start of each
simulation, ten thousand electron particles are
distributed in momentum space according to a
Maxwell-Boltzmann distribution function. These
particles are propagated classically between collisions
according to their velocity, effective mass and the
prevailing field. The selection of the propagation time,
scattering mechanism and other related quantities is
achieved by generating random numbers and using
this numbers to select, for example, a scattering
mechanism. In the case of the ellipsoidal, nonparabolic conduction valley model, the usual HerringVogt transformation matrices are used to map carrier
momenta into spherical valleys when particles are
drifted or scattered. Steady-state results of high field
transport studies have been obtained for lattice
temperatures up to 600 K, in order to gain some
insight into the hot carrier transport and the energy
distribution function that would be generated in the
gate-drain region of a power field effect transistor.
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E ( k )[1 i E ( k )]
III.
RESULTS
Electron drift velocity as a function of
electric field is important in determining the
performance of high-speed and microwave
semiconductor devices. Here we show the results of
temperature dependence of the steady-state velocityfield characteristics and valley occupancy in bulk
GaSb and GaAs materials.
Figure 1 shows the simulated velocity-field
characteristics at 300 K, with a background doping
concentration of 1017 cm-3, and with the electric field
applied along one of the cubic axes.
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GaAs
2.0
5
Drift velocity (*10 m/s )
2.4
1.6
1.2
0.8
GaSb
0.4
0.0
0
2
4
6
8
10
Electric field (kV/m )
Fig 1. Calculated steady-state electron drift velocity
in bulk zincblende GaSb and GaAs using nonparabolic band models.
Similar to the experimental results the
simulations suggest that the peak drift velocity for
zincblende GaAs is 2.2105 ms-1 while that for GaSb
is about 1.2105 ms-1. At higher electric fields,
intervalley optical phonon emission dominates,
causing the drift velocity to saturate at around 0.7105
ms-1 for GaSb and 1.7105 ms-1 for GaAs. The
calculated high field electron drift velocity apparent
from figure 1 is fractionally lower than those that have
been simulated by experimental works which assumed
an effective mass in the upper valleys equal to the free
electron mass. The threshold field for the onset of
significant scattering into satellite conduction band
valleys is a function of the intervalley separation and
the density of electronic states in the satellite valleys.
The importance of electron intervalley transfer at high
electric fields can be clearly seen in figure 2. In this
figure the fractional valley occupancies for different
materials is plotted. It is obvious that the inclusion of
satellite valleys in the simulations is important.
Significant electron transfer to the upper valleys only
begins to occur when the field strength is very close to
the threshold value. At the threshold field the electron
valley occupancies at room temperature for , L and
X are about %85, %13 and %2, respectively.
Figure 3 shows the calculated electron drift velocity
as a function of electric field strength for temperatures
of 300, 450 and 600 K.
751 | P a g e
3. M. Abedzadeh Feyzabadi Int. Journal of Engineering Research and Application
ISSN : 2248-9622, Vol. 3, Issue 5, Sep-Oct 2013, pp.750-753
GaAs
GaSb
Gamma-valley
Valley occupancy ratio (%)
0.80
Gamma-valley
0.60
X-valley
X-valley
0.40
0.20
L-valley
L-valley
0.00
0
1000
2000
0
3000
Electric Field (kV/m )
1000
2000
3000
Electric Field (kV/m)
Fig 2. Fractional occupation of the central and
satellite valleys in GaSb and GaAs as a function of
applied electric field using the non-parabolic band
model.
The decrease in drift mobility with
temperature at low fields is due to increased
intravalley polar optical phonon scattering whereas
the decrease in velocity at higher fields is due to
increased intra and intervalley scattering. It can be
seen from the figure that the peak velocity also
decreases and moves to higher electric field as the
temperature is increased. This is due to the general
increase of total scattering rate with temperature,
which suppresses the electron energy and reduces the
population of the satellite valleys. This latter effect is
apparent from the fact that the electron population in
the central -valley increases with temperature as
shown in figure 2.
GaAs
GaSb
2.5
300 K
450 K
5
-1
Drift velocity (*10 ms )
2.0
300 K
1.5
Figure 4 shows how the electron occupancy ratios
changes with temperature for electrons in the most
populated and L valleys. There are significant
statistical fluctuations in the results for the electrons in
the L valleys for fields around 500 kVm-1, which are
caused by the relatively small number of electron
particles occupying the valleys just above the
threshold for intervalley transfer. Nevertheless it can
be seen that the number of electrons decreases as the
temperature increases for both valleys. Comparison of
the temperature dependence of the valleys occupancy
in GaAs and GaSb materials show that the change in
peak velocity of GaAs from 300 K to 600 K is a
reduction of about %45 whereas for GaSb it is about
%25. The reason can be explained in terms of the
energy band structure. In particular, the different
electron effective mass within the central valley. This
is important because electrons which are near a valley
minimum have small kinetic energies and are
therefore strongly scattered. It is apparent that
intervalley transfer is substantially larger in InAs over
the range of applied electric fields shown, due to the
combined effect of a lower effective mass, lower
satellite valley separation energy, and slightly lower
phonon scattering rate within the valley.
Therefore, the electron velocity in GaAs is
less sensitive to temperature than in GaSb, so GaAs
devices are expected be more tolerant to self-heating
and high ambient temperature.
GaAs
1.0
GaSb
1.0
Valley
L Valley
Electron Occupancy ratio (%)
1.00
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0.8
0.8
300 K
300 K
0.6
0.6
300 K
0.4
0.4
600 K
0.2
0.2
300 K
0.0
1.0
0
10
20
30
40
Electric field (kV/cm)
450 K
600 K
0.0
50
0
10
20
30
40
Electric field (kV/cm)
600 K
0.5
600 K
0.0
0
10
20
30
Electric field (kV/cm)
40
0
10
20
30
40
50
Fig 4. Temperature dependence of the valley
occupancy in the and L valleys of GaAs and GaSb
materials as a function of applied electric field.
Electric field (kV/cm)
REFERENCES
Fig 3. Calculated electron steady-state drift velocity
in bulk GaAs and GaSb as a function of applied
electric field at various lattice temperatures and
assuming a donor concentration of 1017 cm-3. The
peak drift velocity decreases while the threshold field
increases by same percent as the lattice temperature
increases from 300 to 600 K.
www.ijera.com
[1]
[2]
G. W. Turner, S. J. Eglash and A. J.
Strauss," Comparison of High Field Staedy
State and Transient Electron Transport in
Wurtzite GaN, AlN and InN",J. Vac. Sci.
Technol. B, 11, (1993), pp. 864-870.
J. E. Maslar, W. S. Hurst and C. A. Wang,
"The Effect of Strain Rate Variations on the
Microstructure and Hot Deformation
752 | P a g e
50
4. M. Abedzadeh Feyzabadi Int. Journal of Engineering Research and Application
ISSN : 2248-9622, Vol. 3, Issue 5, Sep-Oct 2013, pp.750-753
[3]
[4]
[14]
[5]
[6]
[7]
[8]
[9]
www.ijera.com
Behaviour of AA2024 Aluminium Alloy",
Appl. Spectrosc., 61, (2007), pp.1093-1098.
H. S. Bennett, H. Hung and A. Heckert,
"Calculation of Electron Hall Mobility in
GaSb, GaAs and GaN Using an Iterative
Method", J. Appl. Phys., 98, (2005), pp.
103705-103709.
J. R. Meyer, C. A. Hoffman, F. J. Bartoli
and L. R. Ram-Mohan," Comparison of
Steady-State and Transient Electron
Transport in InAs, InP and GaAs", Appl.,
Lett., 67, (1995), pp. 2756-2762.
H. Xie, W. I. Wang, J. R. Meyer and L. R.
Ram-Mohan, "Comparison of High and Low
Field Electron Transport in AlGaN, AlN and
GaN", Appl. Phys. Lett., 65, (1994),
pp.2048-2052.
H. Arimoto, N. Miura, J. R. Nichola, N. J.
Mason and P. J. Walker, "Comparison of
Low Field Electron Transport in SiC and
GaN Structures for High-Power and high
Temperature Device Modeling", Phys. Rev.
B., 58, (1998), pp. 4560-4566.
N. Bouarissa, A. Zaoui, J. P. Dufour, M.
Certier and H. Aourag, "Discretization
Method of Hydrodynamic for simulation of
GaN MESFETs", Mater. Sci. Eng. B, 47,
(1997), pp.1-7.
T. Wang, F. Kieseling and A. Forchel,
"Potential Performance of SiC and GaN
Based Metal Semiconductor Field Effect
Transistors", Phys. Rev. B, 58, (1998),
pp.3594-3599.
H. Arabshahi, "Comparison of SiC and ZnO
Field Effect Transistors for High Power
Applications", Modern Physics Letters B,
20, (2006), pp.787-793.
H. Arabshahi, "The Frequency Response
and Effect of Trap Parameters on The
Charactersitics of GaN MESFETs", The
Journal of Damghan University of Basic
Sciences,1, (2007), pp.45-49.
www.ijera.com
753 | P a g e