The document is a device modeling report for the 1S1887A diode manufactured by Toshiba, detailing its characteristics and simulation results. It includes information on forward current, junction capacitance, and reverse recovery characteristics, along with comparison data between measured and simulated values. The report also contains various parameters related to the diode's performance, such as saturation current, series resistance, and breakdown voltages.

1. Device Modeling Report
COMPONENTS:
DIODE/ GENERAL PURPOSE RECTIFIER/ STANDARD
PART NUMBER: 1S1887A
MANUFACTURER: TOSHIBA
REMARK: TC=25C
Bee Technologies Inc.
All Rights Reserved Copyright (C) Bee Technologies Inc. 2004

2. PSpice model
Model description
parameter
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
EG Energy-band Gap
All Rights Reserved Copyright (C) Bee Technologies Inc. 2004

3. Forward Current Characteristic
Circuit Simulation Result
Evaluation Circuit
R1
0.01m
D1
V1
0Vdc
1S1887A
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2004

4. Comparison Graph
Circuit Simulation Result
Simulation Result
Vfwd(V) Vfwd(V)
Ifwd(A) %Error
Measurement Simulation
0.01 0.650 0.652 -0.277
0.02 0.674 0.674 -0.045
0.05 0.705 0.704 0.156
0.1 0.730 0.727 0.438
0.2 0.750 0.749 0.133
0.5 0.778 0.779 -0.154
1 0.798 0.803 -0.576
2 0.830 0.827 0.373
5 0.862 0.861 0.116
All Rights Reserved Copyright (C) Bee Technologies Inc. 2004

5. Junction Capacitance Characteristic
Circuit Simulation Result
Evaluation Circuit
V2
0Vdc
V1 = 0 V1 D1
V2 = 400
TD = 0
TR = 10n
TF = 50n
PW = 5u
PER = 10u 1S1887A
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2004

6. Comparison Graph
Circuit Simulation Result
Simulation Result
Cj(pF) Cj(pF)
Vrev(V) %Error
Measurement Simulation
0 8.925 8.925 0.000
0.1 8.312 8.240 0.858
0.2 7.783 7.728 0.704
0.5 6.660 6.684 -0.354
1 5.568 5.732 -2.945
2 4.681 4.777 -2.040
5 3.584 3.571 0.352
10 2.895 2.860 1.206
20 2.323 2.272 2.179
50 1.734 1.690 2.498
100 1.387 1.338 3.518
All Rights Reserved Copyright (C) Bee Technologies Inc. 2004

7. Reverse Recovery Characteristic
Circuit Simulation Result
Evaluation Circuit
R1
50
V2 = 10.7V V1
V1 = -9.20V
TD = 0 D1
TR = 10ns
TF = 10ns
PW = 20us
PER = 50us 1S1887A
0
Compare Measurement vs. Simulation
Measurement Simulation %Error
trr 4.000 us 3.92 us 1.825
All Rights Reserved Copyright (C) Bee Technologies Inc. 2004

8. Reverse Recovery Characteristic Reference
Measurement
Trj =3.12(us)
Trb=0.88(us)
Conditions: Ifwd=Irev=0.2(A), Rl=50
Example
Relation between trj and trb
All Rights Reserved Copyright (C) Bee Technologies Inc. 2004