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This document discusses various types of electronic voltmeters. It includes figures and explanations of transistor voltmeters using emitter followers, differential amplifiers, and operational amplifiers. Key aspects summarized include: - Figure 4.1 shows a transistor voltmeter using an emitter follower where the input voltage is stepped down by the transistor's VBE drop and the input resistance is increased. - Figures 4.2 and 4.3 demonstrate how the difference between two emitter voltages VE1 and VE2 equals the measured voltage Vm for different input voltages Vin in a differential amplifier configuration. - Figure 4.4 presents a circuit that uses a differential amplifier to step up a small input voltage to 75% of the
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https://www.linkedin.com/in/preeti-choudhary-266414182/
https://www.instagram.com/chaudharypreeti1997/
https://www.facebook.com/profile.php?id=100013419194533
https://twitter.com/preetic27018281
Please like, share, comment and follow.
stay connected
If any query then contact:
chaudharypreeti1997@gmail.com
Thanking-You
Preeti Choudhary
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This document summarizes key concepts about alternating current (AC) circuits including resistors, inductors, and capacitors in AC circuits. It discusses the RLC series circuit, power in AC circuits, and resonance. It also covers transformers and how they are used for power transmission by stepping voltages up or down. Resonance occurs at the resonance frequency when the inductive reactance equals the capacitive reactance in a RLC series circuit, resulting in maximum current. Transformers use magnetic induction to change AC voltages efficiently for applications like power distribution.
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This document discusses AC models and analysis of amplifiers. It introduces the concepts of capacitive coupling and bypassing for AC signals while blocking DC. It explains how to model transistors using the T model or p model for small signal AC analysis by replacing the transistor with its equivalent resistor and current source. It provides guidelines for amplifier analysis including performing a DC analysis first, replacing capacitors with shorts for AC, and using supply voltages as AC grounds to derive the AC equivalent circuit. Data sheet parameters like hfe, hie, bac, and re' are also defined for transistor modeling.
Transistors.ppt
Transistors are semiconductor devices with three terminals - collector, base, and emitter. There are two main types, NPN and PNP, which differ in the doping of the semiconductor regions. Bipolar transistors can operate as amplifiers, switches, or oscillators depending on the biasing conditions. The common emitter configuration provides voltage gain but inverts the phase, while common base and common collector configurations do not invert phase. Transistor gain is determined by factors like current gain (beta) and varies based on operating point and temperature.
E4 emitter
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Bipolar Junction Transistor (BJT)
Device Structure and Physical Operation
• BJT is a three terminal device that can operate as “Amplifier” or as “Switch”
• Voltage between the two terminals is used to control the current in the third terminal
• BJT consist of three semiconductor regions: NPN or PNP.
L6 and L7 full wave rectifier, PIV.ppt
The document discusses different types of rectifiers including half-wave and full-wave rectifiers. It describes how full-wave rectifiers using a center-tapped transformer or a bridge rectifier circuit can produce an output voltage during both half-cycles of the input signal. It also defines key terms like peak inverse voltage (PIV) and duty cycle. Examples are provided to calculate voltage and current values for different rectifier circuits and to determine the transformer turns ratio and PIV for center-tapped and bridge full-wave rectifiers.
L6 and L7 full wave rectifier, PIV.ppt
The document discusses different types of rectifiers including half-wave and full-wave rectifiers. It describes how full-wave rectifiers can be built using either a center-tapped transformer or a bridge rectifier. It also defines key terms like peak inverse voltage (PIV) and duty cycle. Examples are provided to calculate voltage and current values for different rectifier circuits and to determine the PIV for half-wave and full-wave rectifiers based on the input voltage and diode cut-in voltage.
Ch08p
This document contains solutions to exercises from Chapter 8. The summaries are:
1) The first exercise calculates the maximum power transfer for a common emitter amplifier circuit under different voltage supply conditions.
2) The second exercise calculates temperature increases for different components in a circuit based on power dissipation.
3) The third exercise similarly calculates temperature rises for different components based on known power and thermal resistances.
L10 bjt introduction s21617
The document discusses bipolar junction transistors (BJTs) and their operation. It begins by introducing the npn and pnp transistor structures, which contain three doped regions: emitter, base, and collector. It describes the active, cutoff, and saturation regions of operation. The document then provides mathematical expressions to relate the emitter, base, and collector currents based on the common-emitter configuration. It also discusses the common-base current gain and common-emitter current gain. Examples are provided to calculate different transistor parameters like beta, alpha, and currents. Finally, the common-emitter configuration and its current-voltage characteristics are summarized.
Ch17s 3rd Naemen
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Operational Amplifier Part 1
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- 4. FIGURE 4.1 Transistor Voltmeter;Emitter Follower
- 5. Question PBL : ELECTRONIC INSTRUMENTATION FIGURE 4.1 • VE=Vin-VBE=10 V-0.7 V=9.3V • Im=VE/(RS+Rm)≅9.3 V/9.3k Ω=1mA • With transistor • IB ≅Im/hfe=1mA/100=10 µA • Ri ≅Vin/IB ≅10V/10 µA=1MΩ • Without transistor= Ri=Rs+Rm=9.3 kΩ
- 6. FIGURE 4.2
- 7. Assignment (14/Sept) • Derive VE1-VE2=Vm. Draw the equivalent circuit.
- 9. Solution When Vin=1 V VE1=Vin -VBE =1 V -0.7 V =0.3 V VE2 =Vp - VBE =0 V – 0.7 V =-0.7 V Vm=VE1-VE2 = 0.3-(-0.7)=1V When Vin=0.5 V VE1=Vin -VBE =0.5 V -0.7 V =-0.2 V VE2 =Vp - VBE =0 V – 0.7 V =-0.7 V Vm=VE1-VE2 = -0.2-(-0.7)=0.5V
- 10. When Vin=7 V VE1=Vin -VBE =7 V -0.7 V =6.3 V VE2 =Vp - VBE =0 V – 0.7 V =-0.7 V Vm=VE1-VE2 = 6.3-(-0.7)=7V
- 12. FIGURE 4.4 R1
- 13. EG=E x (Rc+Rd)/(Ra+Rb+Rc+Rd) =7.5 V x (60k+40k) / (800k +100k +60k +40k) = 0.75 V Vs = EG-VGS=0.75 V –(-5 V) =5.75 V VE1=Vs – VBE=5.75 V – 0.7 V=5.05 V VE2=VP – VBE=5 V – 0.7 V =4.3 V V = VE1 – VE2 =5.05 V – 4.3 V =0.75 V = EG Im = V / RS + Rm =0.75 V/1kohms =0.75 mA 75% of full scale
- 14. Op-Amp Voltage-Follower Voltmeter Input attenuator
- 15. FIGURE 4.7
- 16. Vout = Im x Rm =100µA x 10kΩ = 1V R3 = E/ I4 =20mV/ 0.2 mA =100Ω R4 = (Vo – E) / I4 = (1 V -20 mV) / 0.2 mA =4.9 kΩ
- 17. FIGURE 4.8
- 18. The small voltage drop across shunt resistor Rs is amplified before being applied to deflection instrument. This approach is just as applicable to the measurement of low level alternating Currents as it is to direct-current measurement FIGURE 4.14
- 19. FIGURE 4.9
- 21. FIGURE 4.10