This document provides specifications for the CD4532BMS CMOS 8-Bit Priority Encoder integrated circuit, including:
- Absolute maximum ratings and operating conditions.
- Electrical performance characteristics such as supply current, input/output voltages and currents, propagation delays, and input capacitance over operating temperature and voltage ranges.
- Reliability and quality assurance information such as thermal resistance and junction temperature limits.
- Package information and a brief description of the priority encoding functionality.
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Original N Channel Mosfet PHP45N03LTA PHP45N03LT 45N03LTA 45N03 TO-220 New
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The Microchip Technology Inc. MCP3201 device is a 12-bit analog-to-digital converter with an on-board sample and hold circuit. It has a single input and communicates using a serial interface compatible with SPI. It can sample at up to 100 ksps at 5V or 50 ksps at 2.7V. It has low power consumption and operates over a voltage range of 2.7-5.5V. It is available in 8-pin MSOP, PDIP, SOIC, and TSSOP packages.
Original Mosfet P-Channel TJ20A10M3 J20A10M3 J20A10M 100V 10A TO-220 NewAUTHELECTRONIC
This document provides specifications for the TJ20A10M3 P-channel MOSFET transistor made by Toshiba. Some key specifications include a maximum drain-source voltage of -100V, typical drain-source on resistance of 63mΩ, and maximum drain cut-off current of -10μA. The document also provides charts showing electrical characteristics like drain current vs drain-source voltage under different conditions and maximum ratings for pulsed operations. Safety guidelines are provided to prevent unintended or unsafe uses of the transistor.
This document provides product specifications for the IRFZ44N N-channel enhancement mode trench transistor from Philips Semiconductors. The transistor features very low on-state resistance of 22 mOhms and is intended for use in switched mode power supplies and general purpose switching applications. Key specifications include a maximum drain-source voltage of 55V, drain current of 49A, and junction temperature range of -55°C to 175°C. The document provides detailed electrical characteristics, thermal properties, and mechanical dimensions of the device.
ANAVIEW's Smallest Class D OEM Amplifier BoardHTCS LLC
The Credit Card Size, DC powered (10VDC to 20VDC) Class-D amp is the ideal solution for battery powered PA systems. 2x45 Watts RMS into 6 Ohms and it has very low THD in the Audio frequency band.
The document provides installation and wiring instructions for TECNOLOGIC K series controllers. It specifies that the controller is intended for indoor use and should be mounted in an easily accessible location with minimal vibrations that avoids corrosive gases, water or condensation. Wiring guidelines are provided for different input and output types, including thermocouples, RTDs, voltage/current signals, and relays. Configuration and programming procedures are outlined.
The MAX6603 is a dual-channel signal conditioner that amplifies signals from two external platinum RTD temperature sensors and provides the temperature information as two independent analog output voltages. It excites the RTDs with a constant current, amplifies the signal, and provides a ratiometric output voltage that is compatible with microcontroller ADCs. The device monitors the RTDs for faults and will assert diagnostic outputs low if a fault is detected on either input. It is available in a small 10-pin package and operates over an automotive temperature range from a single power supply.
The document describes a 12-bit digital-to-analog converter (DAC) chip with the following key features:
- 12-bit resolution with low differential and integral nonlinearity errors
- Rail-to-rail output and single or dual channel options
- SPI interface supporting up to 20MHz clock and simultaneous updating of dual DACs
- Fast 4.5us settling time, extended temperature range from -40°C to +125°C
- Internal 2.048V voltage reference with low temperature drift
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Original N Channel Mosfet PHP45N03LTA PHP45N03LT 45N03LTA 45N03 TO-220 New
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The Microchip Technology Inc. MCP3201 device is a 12-bit analog-to-digital converter with an on-board sample and hold circuit. It has a single input and communicates using a serial interface compatible with SPI. It can sample at up to 100 ksps at 5V or 50 ksps at 2.7V. It has low power consumption and operates over a voltage range of 2.7-5.5V. It is available in 8-pin MSOP, PDIP, SOIC, and TSSOP packages.
Original Mosfet P-Channel TJ20A10M3 J20A10M3 J20A10M 100V 10A TO-220 NewAUTHELECTRONIC
This document provides specifications for the TJ20A10M3 P-channel MOSFET transistor made by Toshiba. Some key specifications include a maximum drain-source voltage of -100V, typical drain-source on resistance of 63mΩ, and maximum drain cut-off current of -10μA. The document also provides charts showing electrical characteristics like drain current vs drain-source voltage under different conditions and maximum ratings for pulsed operations. Safety guidelines are provided to prevent unintended or unsafe uses of the transistor.
This document provides product specifications for the IRFZ44N N-channel enhancement mode trench transistor from Philips Semiconductors. The transistor features very low on-state resistance of 22 mOhms and is intended for use in switched mode power supplies and general purpose switching applications. Key specifications include a maximum drain-source voltage of 55V, drain current of 49A, and junction temperature range of -55°C to 175°C. The document provides detailed electrical characteristics, thermal properties, and mechanical dimensions of the device.
ANAVIEW's Smallest Class D OEM Amplifier BoardHTCS LLC
The Credit Card Size, DC powered (10VDC to 20VDC) Class-D amp is the ideal solution for battery powered PA systems. 2x45 Watts RMS into 6 Ohms and it has very low THD in the Audio frequency band.
The document provides installation and wiring instructions for TECNOLOGIC K series controllers. It specifies that the controller is intended for indoor use and should be mounted in an easily accessible location with minimal vibrations that avoids corrosive gases, water or condensation. Wiring guidelines are provided for different input and output types, including thermocouples, RTDs, voltage/current signals, and relays. Configuration and programming procedures are outlined.
The MAX6603 is a dual-channel signal conditioner that amplifies signals from two external platinum RTD temperature sensors and provides the temperature information as two independent analog output voltages. It excites the RTDs with a constant current, amplifies the signal, and provides a ratiometric output voltage that is compatible with microcontroller ADCs. The device monitors the RTDs for faults and will assert diagnostic outputs low if a fault is detected on either input. It is available in a small 10-pin package and operates over an automotive temperature range from a single power supply.
The document describes a 12-bit digital-to-analog converter (DAC) chip with the following key features:
- 12-bit resolution with low differential and integral nonlinearity errors
- Rail-to-rail output and single or dual channel options
- SPI interface supporting up to 20MHz clock and simultaneous updating of dual DACs
- Fast 4.5us settling time, extended temperature range from -40°C to +125°C
- Internal 2.048V voltage reference with low temperature drift
The document describes the UCC3895 BiCMOS advanced phase-shift PWM controller. It has features such as programmable output turn-on delay, adaptive delay set, bidirectional oscillator synchronization, and voltage-mode or current-mode control. It can operate at frequencies up to 1 MHz with typical operating current of 5 mA at 500 kHz. The UCC3895 is a phase-shift PWM controller that implements full-bridge power stage control by phase shifting one half-bridge with respect to the other, allowing constant frequency pulse-width modulation with zero-voltage switching for high efficiency at high frequencies. It improves on previous controller families with additional features such as enhanced control logic and adaptive delay set.
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Original N-Channel Power MOSFET IRF1010EPBF IRF1010 1010 60V 84A TO-220 New International Rectifier
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The document summarizes the TPS3617 and TPS3618 battery backup supervisors. The devices monitor a 5V supply and provide a battery backup function to retain RAM data during power faults. When the monitored voltage drops below a threshold, the output switches from the main supply to the backup battery. It also features a watchdog timer and power on reset. The devices are available in an 8-pin MSOP package and operate from -40°C to 85°C. Typical applications include set-top boxes, voice mail systems, portable equipment, and automotive systems.
This document provides specifications for a 120W DIN rail power supply with the following key details:
- It has a single 120W output with a voltage range of 22-28V and a current of 5A.
- The input voltage range is 85-264VAC. It has protections such as overload, overvoltage, and overtemperature protections.
- Additional features include compact design, easy wire connection, 10 year lifetime, shock/vibration resistance, and convection cooling.
This document provides data sheets for the PS9151 high noise reduction photocoupler. It includes specifications for the device such as electrical characteristics, maximum ratings, recommended operating conditions, and usage cautions. The photocoupler contains an LED input and CMOS output integrated circuit designed for high-speed logic interface circuits up to 15 Mbps. It provides high common mode transient immunity and isolation voltage up to 3,750 Vrms.
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Original N-Channel Mosfet 2SK3484 3484 16A 100V TO-252 New Renesas ElectronicsAUTHELECTRONIC
This document provides specifications for the 2SK3484 N-channel MOS field effect transistor (MOSFET) including:
- Electrical characteristics such as on-state resistance, gate cut-off voltage, and input/output capacitances.
- Thermal characteristics such as thermal resistance and power dissipation derating curves.
- Switching characteristics such as turn-on/off delay times and rise/fall times.
- Package drawings and equivalent circuit diagram for the TO-251 and TO-252 packages.
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This document provides specifications for the TPC8107 P-channel MOSFET transistor made by Toshiba. Key details include:
- It is suitable for applications such as notebook PCs, portable equipment, and lithium ion battery applications.
- It has a small footprint due to a small, thin package and low drain-source on resistance of 5.5 mOhms typical.
- Maximum ratings include a drain-source voltage of -30V, drain current of -13A DC and -52A pulse, and channel temperature of 150°C.
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Original N Channel Mosfet 2SK3566 K3566 3566 2.5A 900V TO-220 New
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This document summarizes specifications for SN5414, SN54LS14, SN7414, and SN74LS14 hex Schmitt-trigger inverters. It includes:
- Electrical characteristics such as input/output voltage thresholds, propagation delays, output current limits.
- Recommended operating conditions such as supply voltage and temperature ranges.
- Package options and dimensions, pinout diagrams, logic diagrams, and schematics.
- Ordering information, production and quality control data, and measurement procedure notes.
Orriginal N-Channel Mosfet K3564 3564 2SK3564 TO-220F New ToshibaAUTHELECTRONIC
This document provides specifications for the TOSHIBA 2SK3564 field effect transistor. It is a silicon n-channel MOS transistor intended for switching regulator applications. Key specifications include a low drain-source ON resistance of 3.7 ohms typical, a high forward transfer admittance of 2.6 Siemens typical, and a low leakage current of 100 microamps maximum. Absolute maximum ratings and electrical characteristics are provided along with typical performance curves.
This document provides information on the UC3844, UC3845, UC2844, and UC2845 high performance current mode controllers, including:
- Operating temperature ranges and packaging for the devices.
- Pin connections and ordering information for the different package types.
- Electrical characteristics like reference voltage, oscillator frequency, error amplifier performance, current sense input, output specifications, and undervoltage lockout thresholds.
- Graphs depicting properties like oscillator frequency vs timing resistor, output deadtime vs frequency, error amplifier gain and phase vs frequency, and more.
- An overview of key features like current mode operation, adjustable output deadtime, compensation, current limiting, undervoltage lockout,
The document provides information on Omron's RU Series universal relays, including:
- The RU Series includes plug-in and PCB mount relays with DPDT, 4PDT, and 4PDT bifurcated contact configurations.
- Features include LED indicators, mechanical flag indicators, latching levers, and marking plates for terminal identification.
- Relays are available with AC or DC coils in various voltage ratings and with surge protection components.
- Contact ratings vary by model with maximum ratings of 10A for DPDT and 6A for 4PDT configurations.
- Specifications include electrical life, operating temperature range, vibration resistance, and more.
This document provides specifications for the SC100 single loop controller from M-System. The SC100 features a color LCD touch panel, universal inputs and outputs, PID control functions, alarm functions, and communication capabilities. It has two PID function blocks and supports advanced computation, sequence control, and auto-tuning functions. The controller can be programmed and configured via the touch panel or with external software. Specifications include details on inputs and outputs, display, control functions, installation requirements, and performance metrics.
The DS1307 is a real-time clock with 56 bytes of battery-backed SRAM and an I2C serial interface. It keeps time in seconds, minutes, hours, date, month, and year formats with leap year compensation. The device operates from a primary power supply or backup battery. It enters a low-power mode when running from battery alone.
Professor Roy Green from UTS speaks on Australia's manufacturing strengths at the Hunter AiGroup Future of Manufacturing & Engineering Summit on 29 July 2014
This document provides information on aluminum electrolytic capacitors including their applications, features, construction, specifications, characteristics, dimensions, and ordering codes. It describes general purpose capacitors suitable for filtering, coupling and pulse circuits in entertainment equipment as well as switch mode power supplies. The capacitors have compact dimensions, high capacitance values, are RoHS compatible, and have radial leads and an aluminum case with insulating sleeve.
The document describes the UCC3895 BiCMOS advanced phase-shift PWM controller. It has features such as programmable output turn-on delay, adaptive delay set, bidirectional oscillator synchronization, and voltage-mode or current-mode control. It can operate at frequencies up to 1 MHz with typical operating current of 5 mA at 500 kHz. The UCC3895 is a phase-shift PWM controller that implements full-bridge power stage control by phase shifting one half-bridge with respect to the other, allowing constant frequency pulse-width modulation with zero-voltage switching for high efficiency at high frequencies. It improves on previous controller families with additional features such as enhanced control logic and adaptive delay set.
Original N-Channel Power MOSFET IRF1010EPBF IRF1010 1010 60V 84A TO-220 New I...AUTHELECTRONIC
Original N-Channel Power MOSFET IRF1010EPBF IRF1010 1010 60V 84A TO-220 New International Rectifier
https://authelectronic.com/original-n-channel-power-mosfet-irf1010epbf-irf1010-1010-60v-84a-to-220-new-international-rectifier
The document summarizes the TPS3617 and TPS3618 battery backup supervisors. The devices monitor a 5V supply and provide a battery backup function to retain RAM data during power faults. When the monitored voltage drops below a threshold, the output switches from the main supply to the backup battery. It also features a watchdog timer and power on reset. The devices are available in an 8-pin MSOP package and operate from -40°C to 85°C. Typical applications include set-top boxes, voice mail systems, portable equipment, and automotive systems.
This document provides specifications for a 120W DIN rail power supply with the following key details:
- It has a single 120W output with a voltage range of 22-28V and a current of 5A.
- The input voltage range is 85-264VAC. It has protections such as overload, overvoltage, and overtemperature protections.
- Additional features include compact design, easy wire connection, 10 year lifetime, shock/vibration resistance, and convection cooling.
This document provides data sheets for the PS9151 high noise reduction photocoupler. It includes specifications for the device such as electrical characteristics, maximum ratings, recommended operating conditions, and usage cautions. The photocoupler contains an LED input and CMOS output integrated circuit designed for high-speed logic interface circuits up to 15 Mbps. It provides high common mode transient immunity and isolation voltage up to 3,750 Vrms.
Original N-channel 650 V 0.230 Ohm 12 A MDmesh V Power MOSFET in DPAK DPAK ST...AUTHELECTRONIC
Original N-channel 650 V 0.230 Ohm 12 A MDmesh V Power MOSFET in DPAK DPAK STF16N65M5 16N65M5 16N65 710V 12A TO-220FP New STMicroelectronics
https://authelectronic.com/original-n-channel-650-v-0-230-ohm-12-a-mdmesh-v-power-mosfet-in-dpak-dpak-stf16n65m5-16n65m5-16n65-710v-12a-to-220fp-new-stmicroelectronics
Original N-Channel Mosfet 2SK3484 3484 16A 100V TO-252 New Renesas ElectronicsAUTHELECTRONIC
This document provides specifications for the 2SK3484 N-channel MOS field effect transistor (MOSFET) including:
- Electrical characteristics such as on-state resistance, gate cut-off voltage, and input/output capacitances.
- Thermal characteristics such as thermal resistance and power dissipation derating curves.
- Switching characteristics such as turn-on/off delay times and rise/fall times.
- Package drawings and equivalent circuit diagram for the TO-251 and TO-252 packages.
Original P-Channel Mosfet TPC8107 13A 30V SOP-8 NewAUTHELECTRONIC
This document provides specifications for the TPC8107 P-channel MOSFET transistor made by Toshiba. Key details include:
- It is suitable for applications such as notebook PCs, portable equipment, and lithium ion battery applications.
- It has a small footprint due to a small, thin package and low drain-source on resistance of 5.5 mOhms typical.
- Maximum ratings include a drain-source voltage of -30V, drain current of -13A DC and -52A pulse, and channel temperature of 150°C.
Original N Channel Mosfet 2SK3566 K3566 3566 2.5A 900V TO-220 NewAUTHELECTRONIC
Original N Channel Mosfet 2SK3566 K3566 3566 2.5A 900V TO-220 New
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This document summarizes specifications for SN5414, SN54LS14, SN7414, and SN74LS14 hex Schmitt-trigger inverters. It includes:
- Electrical characteristics such as input/output voltage thresholds, propagation delays, output current limits.
- Recommended operating conditions such as supply voltage and temperature ranges.
- Package options and dimensions, pinout diagrams, logic diagrams, and schematics.
- Ordering information, production and quality control data, and measurement procedure notes.
Orriginal N-Channel Mosfet K3564 3564 2SK3564 TO-220F New ToshibaAUTHELECTRONIC
This document provides specifications for the TOSHIBA 2SK3564 field effect transistor. It is a silicon n-channel MOS transistor intended for switching regulator applications. Key specifications include a low drain-source ON resistance of 3.7 ohms typical, a high forward transfer admittance of 2.6 Siemens typical, and a low leakage current of 100 microamps maximum. Absolute maximum ratings and electrical characteristics are provided along with typical performance curves.
This document provides information on the UC3844, UC3845, UC2844, and UC2845 high performance current mode controllers, including:
- Operating temperature ranges and packaging for the devices.
- Pin connections and ordering information for the different package types.
- Electrical characteristics like reference voltage, oscillator frequency, error amplifier performance, current sense input, output specifications, and undervoltage lockout thresholds.
- Graphs depicting properties like oscillator frequency vs timing resistor, output deadtime vs frequency, error amplifier gain and phase vs frequency, and more.
- An overview of key features like current mode operation, adjustable output deadtime, compensation, current limiting, undervoltage lockout,
The document provides information on Omron's RU Series universal relays, including:
- The RU Series includes plug-in and PCB mount relays with DPDT, 4PDT, and 4PDT bifurcated contact configurations.
- Features include LED indicators, mechanical flag indicators, latching levers, and marking plates for terminal identification.
- Relays are available with AC or DC coils in various voltage ratings and with surge protection components.
- Contact ratings vary by model with maximum ratings of 10A for DPDT and 6A for 4PDT configurations.
- Specifications include electrical life, operating temperature range, vibration resistance, and more.
This document provides specifications for the SC100 single loop controller from M-System. The SC100 features a color LCD touch panel, universal inputs and outputs, PID control functions, alarm functions, and communication capabilities. It has two PID function blocks and supports advanced computation, sequence control, and auto-tuning functions. The controller can be programmed and configured via the touch panel or with external software. Specifications include details on inputs and outputs, display, control functions, installation requirements, and performance metrics.
The DS1307 is a real-time clock with 56 bytes of battery-backed SRAM and an I2C serial interface. It keeps time in seconds, minutes, hours, date, month, and year formats with leap year compensation. The device operates from a primary power supply or backup battery. It enters a low-power mode when running from battery alone.
Professor Roy Green from UTS speaks on Australia's manufacturing strengths at the Hunter AiGroup Future of Manufacturing & Engineering Summit on 29 July 2014
This document provides information on aluminum electrolytic capacitors including their applications, features, construction, specifications, characteristics, dimensions, and ordering codes. It describes general purpose capacitors suitable for filtering, coupling and pulse circuits in entertainment equipment as well as switch mode power supplies. The capacitors have compact dimensions, high capacitance values, are RoHS compatible, and have radial leads and an aluminum case with insulating sleeve.
This document provides specifications for ELP series aluminum electrolytic capacitors, including:
- Voltage and capacitance ranges from 16-100V and 470uF-47,000uF
- Temperature range of -40°C to +85°C
- Leakage current, dissipation factor, and impedance ratio specifications
- Requirements for capacitance change, dissipation factor, and leakage current after load life and shelf life testing.
The document contains a list of medical terms and their definitions. It includes over 50 terms related to various body systems and medical conditions. Some examples included are stasis, phobia, lithiasis, hemo, pulmon, neuro, derm, gastro, dysmenorrhea, colostomy, cryptorchism, arthritis, dysphasia, metastasis, carcinogen, osteoma, adenoma, staging, dendrite, bladder, necr, fluid, and melano. The full document seeks to define many medical prefixes, suffixes, conditions, diseases, and anatomical structures.
Samsung Electronics is a South Korean multinational electronics company headquartered in Suwon, South Korea. It focuses on digital media, semiconductors, telecommunications networks, and LCD appliances. Samsung has manufacturing plants and sales networks in 80 countries and is one of the largest information technology companies in the world. It began operations in India in 1995 and has established factories, R&D centers, and programs to support education in India.
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Our infographic crunches millions of Facebook interactions from tens of thousands of articles to find an increase in engagement with news and other content in the first few months of 2014.
This document contains power rankings for several local high school football teams as of September 28, 2014. It provides brief updates on the recent performances and upcoming schedules of Newburgh, Marlboro, Wallkill, Arlington, Beacon, Millbrook, Highland, Lourdes, Roosevelt, and John Jay. The rankings recognize teams that have performed well despite challenges, and anticipate competitive matchups between top teams as the season continues.
Nguyen Trieu Phuc Hai is applying for a Product Manager position at Mega Lifesciences (Vietnam) Ltd. that was advertised on CareerBuilder. He believes his academic background in International Business Management and work experiences organizing ideas, speaking confidently, working in teams, researching information, and using technology qualify him for the role. Hai highlights his education at Keuka College and passion for broadening his product management skills. He has enclosed his resume and looks forward to discussing his application in an interview.
The document provides advice and reminders for living happily in old age. It encourages enjoying life and making the most of opportunities to visit places, see friends, and spend savings while still physically able. It stresses treating health problems with optimism, facing life's difficulties with acceptance, focusing on happiness over worries, and treasuring one's health, finances, spouse, and friends in retirement. The overall message is to seize joy in each day and make the most of the time remaining.
The document describes the life cycles of plants, animals, and humans. It explains that plants go through a life cycle of growth from seed to mature plant. For animals, it discusses different types of life cycles such as birds that are hatched from eggs and go through nestling and fledging stages before becoming adults, or insects that undergo incomplete or complete metamorphosis from egg to adult forms. The human life cycle is also outlined from infancy through adulthood.
The document discusses the records and playoff outlooks of various high school football teams in the region according to power rankings from October 5, 2014. It provides updates on teams like Millbrook, Beacon, Newburgh, and Marlboro that are trying to secure playoff berths. Top-ranked teams discussed are Highland at 5-0, Lourdes at 5-0 preparing for a big game against Ardsley, and John Jay remaining undefeated in league play at 4-1.
The document discusses a student's perspective on their academics and professors. It shares opinions on class projects and grades before criticizing a professor. Several lines then include inappropriate language discussing physical harm. The summary ends by inviting others to an unspecified location.
This document provides information on Samsung's subsidiaries and affiliates. It discusses Samsung's founding in 1938 and its diversification into various industries such as electronics, semiconductors, and mobile phones. The document then lists and describes over 50 principal subsidiary companies of Samsung across various industries, as well as several joint ventures and partially owned companies.
The document provides an overview of Deliberant's APC series products, which include a variety of wireless devices for point-to-point and point-to-multipoint applications. The products utilize unlicensed 2.4GHz and 5GHz frequencies and proprietary iPoll protocol for efficient bandwidth usage. Tables in the document describe the technical specifications and features of each device model, such as frequency range, antenna gain, throughput and power levels. The document also compares the recommended and maximum distances that can be achieved between devices in different deployment scenarios.
Nguyen Trieu Phuc Hai is applying for a Product Manager position at Mega Lifesciences (Vietnam) Ltd. that was advertised on CareerBuilder. He believes his academic background in International Business Management and work experiences organizing ideas, speaking confidently, working in teams, researching information, and using technology qualify him for the role. Hai highlights his education at Keuka College and passion for broadening his product management skills. He has enclosed his resume and looks forward to discussing his application in an interview.
Original N-Channel Mosfet IRFZ24N IRFZ24 TO-220 New Infineon TechnologiesAUTHELECTRONIC
This document provides information on the IRFZ24NPbF HEXFET power MOSFET from International Rectifier. It has a low on-resistance of 0.07 ohms and is suitable for applications up to 50 watts. The MOSFET uses a TO-220 package for its low thermal resistance and cost. It has features such as fast switching, avalanche rating, and a wide operating temperature range from -55 to 175 degrees Celsius.
The document summarizes the TPS3617 and TPS3618 battery-backup supervisors. These ICs monitor a 5V supply and provide a battery-backup function to retain RAM data during power faults. When the VDD voltage drops below a threshold, the RESET output asserts and VOUT switches from VDD to VBAT. When VDD rises above the threshold, VOUT switches back to VDD. The RESET output remains low until the delay time expires. The ICs feature low power consumption, a watchdog timer, and power-on reset generator. They are available in an 8-pin MSOP package and operate from -40°C to 85°C.
This document provides specifications for an N-channel MOSFET transistor.
The transistor has a drain-source voltage rating of 650V, can handle up to 7A of continuous drain current, and has low on-resistance and fast switching times.
Tables provide information on maximum ratings, electrical characteristics, and dimensions for the TO-220 package variants. Graphs illustrate characteristics like safe operating area, thermal resistance over time, and diode recovery behavior.
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This document summarizes the specifications and characteristics of the FQP70N10 100V N-Channel MOSFET from Fairchild Semiconductor. It is an enhancement mode power MOSFET produced using Fairchild's proprietary DMOS technology to minimize on-state resistance and provide superior switching performance. Key features include a maximum drain current of 57A, on-resistance of 0.023 ohms, and avalanche tested capability. Electrical characteristics, switching characteristics, thermal characteristics and maximum ratings are provided.
Original P-CHANNEL MOSFET IRF5210PBF IRF5210 5210 100V 38A TO-220 New IRAUTHELECTRONIC
Original P-CHANNEL MOSFET IRF5210PBF IRF5210 5210 100V 38A TO-220 New IR
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This document provides specifications for an Advanced Power N-CHANNEL ENHANCEMENT MODE POWER MOSFET. It has a low on-resistance of 9mΩ, simple drive requirements, and fast switching characteristics with a continuous drain current of 57A. The MOSFET is RoHS compliant, halogen-free, and has a maximum drain-source voltage of 25V. It comes in the TO-252 surface mount package.
Original N Channel Mosfet FQPF12N60 12N60 12A 600V New FairchildAUTHELECTRONIC
Original N Channel Mosfet FQPF12N60 12N60 12A 600V New Fairchild
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Original N-Channel MOSFET FQPF3N90 3N90 900V 3A TO-220 New FairchildAUTHELECTRONIC
This document provides specifications for the FQPF3N90 900V N-Channel MOSFET from Fairchild Semiconductor. It includes maximum ratings, electrical characteristics, thermal characteristics, and typical performance curves. The MOSFET uses Fairchild's proprietary planar stripe DMOS technology to minimize on-state resistance and provide superior switching performance while withstanding high energy pulses. It is well-suited for high efficiency switch mode power supplies.
The document provides specifications for the CD4051B, CD4052B, and CD4053B CMOS analog multiplexer/demultiplexer integrated circuits from Texas Instruments. It describes their key features such as wide ranges for digital and analog signal levels, low ON resistance, high OFF resistance, and logic-level conversion. Tables provide truth tables, pinouts, maximum ratings, thermal information, and electrical specifications for the devices over temperature.
This document describes a dual 12-bit DAC chip. It contains two 12-bit DACs, on-chip voltage reference, output amplifiers, and reference buffer amplifiers. It can operate from a single or dual power supply. Key specifications include 12-bit resolution, differential nonlinearity of ±0.9 LSB max, output ranges of 0-5V, 0-10V, and ±5V. The chip comes in a 28-lead CQFP package and is screened using various reliability tests according to MIL-STD-883.
Original N-Channel Mosfet IRF2805 2805 55V 75A TO-220 New IRAUTHELECTRONIC
This document summarizes the key specifications and characteristics of the IRF2805 HEXFET Power MOSFET:
1) It is designed for automotive applications and has a maximum junction temperature of 175°C.
2) Important parameters include on-resistance of 3.9-4.7 mΩ, drain current of 75A continuous and 700A pulsed, and avalanche energy of 450mJ.
3) Graphs show characteristics such as output curves, transfer curves, and safe operating area over temperature.
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This document provides information on the IRF9540 power MOSFET from Vishay Siliconix. It is a p-channel MOSFET in a TO-220AB package that operates with a maximum junction temperature of 175°C. Key specifications include a drain-source breakdown voltage of 100V, on-resistance of 0.20 ohms at -10V gate-source voltage, and fast switching times below 60ns. The MOSFET also has rugged avalanche and repetitive avalanche ratings suitable for inductive switching applications.
This document provides information on the BA6238A, BA6238AN, BA6239A, and BA6239AN motor driver ICs, which incorporate two reversible motor drivers suitable for driving small DC brush motors. Each IC contains built-in power transistors for motor driving and thermal shutdown circuits to protect from overheating. The document includes specifications, application examples, operating procedures, and electrical characteristic curves for the motor driver ICs.
The BA6229 is a monolithic integrated circuit used for driving reversible motors. It contains a logic section that can set brake and open modes and an output transistor that controls forward and reverse motor operations. Some key features include a built-in power transistor for motor driving up to 1.2A, operation from 8-23V supply voltage, and four output modes for forward, reverse, stop, and brake functions.
The BA6219B and BA6219BFP-Y are reversible motor driver ICs suitable for brush motors. They have two logic inputs that allow four output modes: forward, reverse, idling, and braking. The motor speed can be set arbitrarily by controlling the voltage applied to the motor. Key features include a large output current, thermal shutdown protection, and pins to set the output voltage. Application examples are provided.
The BA6209 and BA6209N ICs are motor driver chips that can operate motors in forward, reverse, or braking modes. They can handle motor currents up to 1.6A and have features such as integrated braking, rush current absorption, and motor speed control via an input pin. The chips are designed to drive brush motors typically used in devices like VCRs and cassette recorders.
The BA6191 is a 2-channel motor driver IC that can be used in applications like CD players. It has four operating modes - forward, reverse, stop, and brake - that are selected by two control logic inputs. It uses a negative power supply and has protections like thermal shutdown and power supply voltage drop muting. The IC outputs a voltage twice the reference voltage in forward and reverse modes and stops output or brakes in the other modes.
This document provides specifications for the BA5417, a dual power amplifier IC compatible with 6-15V power supplies. It is designed for use in radio cassette and mini component players. Key features include high output power of up to 5W per channel, low distortion of 0.1% or less, and standby switching functions. The document provides detailed electrical characteristics, application circuit examples, and test data graphs.
The BA5406 is a dual-OTL monolithic power IC containing two high-output, low-frequency power amplifiers. It can output 5W with a 12V power supply or 2.8W with a 9V power supply into a 3Ω load. It has low "pop" noise when power is applied and generates little radio-band noise, making it suitable for stereo radio cassette players and other audio applications. The IC has features such as good low-voltage characteristics, channel balance, and distortion performance in a compact 12-pin package.
This document consists of 10 repetitions of the same sentence stating that the material is copyrighted by its respective manufacturer. It does not provide any other context or information.
The BA3822LS, BA3822FS, BA3823LS, and BA3824LS are monolithic, five-point stereo graphic equalizer ICs. Each IC has two channels with independently set center frequencies. These ICs are ideal for home stereo systems, radio cassette players, and car stereos due to their wide operating voltage range and compact packages. The ICs differ in their amount of boost and cut control, so choose according to your application requirements.
The BA3812L is a five-channel graphic equalizer integrated circuit that provides all necessary functions on a single chip. It features low distortion, low noise, and wide dynamic range, making it suitable for hi-fi stereo applications. The five center frequencies can be independently set using external capacitors. By using two ICs, a 10-point graphic equalizer can be created. The IC has a wide operating voltage range of 3.5V to 16V allowing it to be used in various stereo equipment.
2. 7-1228
Specifications CD4532BMS
Absolute Maximum Ratings Reliability Information
DC Supply Voltage Range, (VDD) . . . . . . . . . . . . . . . -0.5V to +20V
(Voltage Referenced to VSS Terminals)
Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VDD +0.5V
DC Input Current, Any One Input . . . . . . . . . . . . . . . . . . . . . . . .±10mA
Operating Temperature Range. . . . . . . . . . . . . . . . -55oC to +125oC
Package Types D, F, K, H
Storage Temperature Range (TSTG) . . . . . . . . . . . -65oC to +150oC
Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . +265oC
At Distance 1/16 ± 1/32 Inch (1.59mm ± 0.79mm) from case for
10s Maximum
Thermal Resistance . . . . . . . . . . . . . . . . θja θjc
Ceramic DIP and FRIT Package . . . . . 80oC/W 20oC/W
Flatpack Package . . . . . . . . . . . . . . . . 70oC/W 20oC/W
Maximum Package Power Dissipation (PD) at +125oC
For TA = -55oC to +100oC (Package Type D, F, K) . . . . . . 500mW
For TA = +100oC to +125oC (Package Type D, F, K). . . . . .Derate
Linearity at 12mW/oC to 200mW
Device Dissipation per Output Transistor . . . . . . . . . . . . . . . 100mW
For TA = Full Package Temperature Range (All Package Types)
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175o
C
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER SYMBOL CONDITIONS (NOTE 1)
GROUP A
SUBGROUPS TEMPERATURE
LIMITS
UNITSMIN MAX
Supply Current IDD VDD = 20V, VIN = VDD or GND 1 +25oC - 10 µA
2 +125oC - 1000 µA
VDD = 18V, VIN = VDD or GND 3 -55oC - 10 µA
Input Leakage Current IIL VIN = VDD or GND VDD = 20 1 +25oC -100 - nA
2 +125oC -1000 - nA
VDD = 18V 3 -55oC -100 - nA
Input Leakage Current IIH VIN = VDD or GND VDD = 20 1 +25oC - 100 nA
2 +125oC - 1000 nA
VDD = 18V 3 -55oC - 100 nA
Output Voltage VOL15 VDD = 15V, No Load 1, 2, 3 +25oC, +125oC, -55oC - 50 mV
Output Voltage VOH15 VDD = 15V, No Load (Note 3) 1, 2, 3 +25oC, +125oC, -55oC 14.95 - V
Output Current (Sink) IOL5 VDD = 5V, VOUT = 0.4V 1 +25oC 0.53 - mA
Output Current (Sink) IOL10 VDD = 10V, VOUT = 0.5V 1 +25oC 1.4 - mA
Output Current (Sink) IOL15 VDD = 15V, VOUT = 1.5V 1 +25oC 3.5 - mA
Output Current (Source) IOH5A VDD = 5V, VOUT = 4.6V 1 +25oC - -0.53 mA
Output Current (Source) IOH5B VDD = 5V, VOUT = 2.5V 1 +25oC - -1.8 mA
Output Current (Source) IOH10 VDD = 10V, VOUT = 9.5V 1 +25oC - -1.4 mA
Output Current (Source) IOH15 VDD = 15V, VOUT = 13.5V 1 +25oC - -3.5 mA
N Threshold Voltage VNTH VDD = 10V, ISS = -10µA 1 +25oC -2.8 -0.7 V
P Threshold Voltage VPTH VSS = 0V, IDD = 10µA 1 +25oC 0.7 2.8 V
Functional F VDD = 2.8V, VIN = VDD or GND 7 +25oC VOH >
VDD/2
VOL <
VDD/2
V
VDD = 20V, VIN = VDD or GND 7 +25o
C
VDD = 18V, VIN = VDD or GND 8A +125o
C
VDD = 3V, VIN = VDD or GND 8B -55o
C
Input Voltage Low
(Note 2)
VIL VDD = 5V, VOH > 4.5V, VOL < 0.5V 1, 2, 3 +25o
C, +125o
C, -55o
C - 1.5 V
Input Voltage High
(Note 2)
VIH VDD = 5V, VOH > 4.5V, VOL < 0.5V 1, 2, 3 +25o
C, +125o
C, -55o
C 3.5 - V
Input Voltage Low
(Note 2)
VIL VDD = 15V, VOH > 13.5V,
VOL < 1.5V
1, 2, 3 +25o
C, +125o
C, -55o
C - 4 V
Input Voltage High
(Note 2)
VIH VDD = 15V, VOH > 13.5V,
VOL < 1.5V
1, 2, 3 +25o
C, +125o
C, -55o
C 11 - V
NOTES: 1. All voltages referenced to device GND, 100% testing being
implemented.
2. Go/No Go test with limits applied to inputs.
3. For accuracy, voltage is measured differentially to VDD. Limit
is 0.050V max.
3. 7-1229
Specifications CD4532BMS
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER SYMBOL CONDITIONS (NOTE 1, 2)
GROUP A
SUBGROUPS TEMPERATURE
LIMITS
UNITSMIN MAX
Propagation Delay
E1 to E0
E1 to GS
TPHL1
TPLH1
VDD = 5V, VIN = VDD or GND 9 +25oC - 220 ns
10, 11 +125oC, -55oC - 297 ns
Propagation Delay
E1 to QM
DN to GS
TPHL2
TPLH2
VDD = 5V, VIN = VDD or GND 9 +25oC - 340 ns
10, 11 +125o
C, -55o
C - 459 ns
Propagation Delay
DN to QM
TPHL3
TPLH3
VDD = 5V, VIN = VDD or GND 9 +25oC - 440 ns
10, 11 +125oC, -55oC - 594 ns
Transition Time TTHL
TTLH
VDD = 5V, VIN = VDD or GND 9 +25oC - 200 ns
10, 11 +125oC, -55oC - 270 ns
NOTES:
1. CL = 50pF, RL = 200K, Input TR, TF < 20ns.
2. -55oC and +125oC limits guaranteed, 100% testing being implemented.
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER SYMBOL CONDITIONS NOTES TEMPERATURE
LIMITS
UNITSMIN MAX
Supply Current IDD VDD = 5V, VIN = VDD or GND 1, 2 -55oC, +25oC - 5 µA
+125oC - 150 µA
VDD = 10V, VIN = VDD or GND 1, 2 -55o
C, +25o
C - 10 µA
+125oC - 300 µA
VDD = 15V, VIN = VDD or GND 1, 2 -55oC, +25oC - 10 µA
+125oC - 600 µA
Output Voltage VOL VDD = 5V, No Load 1, 2 +25oC, +125oC,
-55oC
- 50 mV
Output Voltage VOL VDD = 10V, No Load 1, 2 +25o
C, +125o
C,
-55o
C
- 50 mV
Output Voltage VOH VDD = 5V, No Load 1, 2 +25oC, +125oC,
-55oC
4.95 - V
Output Voltage VOH VDD = 10V, No Load 1, 2 +25oC, +125oC,
-55oC
9.95 - V
Output Current (Sink) IOL5 VDD = 5V, VOUT = 0.4V 1, 2 +125oC 0.36 - mA
-55o
C 0.64 - mA
Output Current (Sink) IOL10 VDD = 10V, VOUT = 0.5V 1, 2 +125oC 0.9 - mA
-55oC 1.6 - mA
Output Current (Sink) IOL15 VDD = 15V, VOUT = 1.5V 1, 2 +125o
C 2.4 - mA
-55o
C 4.2 - mA
Output Current (Source) IOH5A VDD = 5V, VOUT = 4.6V 1, 2 +125o
C - -0.36 mA
-55oC - -0.64 mA
Output Current (Source) IOH5B VDD = 5V, VOUT = 2.5V 1, 2 +125oC - -1.15 mA
-55o
C - -2.0 mA
Output Current (Source) IOH10 VDD = 10V, VOUT = 9.5V 1, 2 +125o
C - -0.9 mA
-55o
C - -1.6 mA
Output Current (Source) IOH15 VDD =15V, VOUT = 13.5V 1, 2 +125oC - -2.4 mA
-55oC - -4.2 mA
Input Voltage Low VIL VDD = 10V, VOH > 9V, VOL < 1V 1, 2 +25o
C, +125o
C,
-55o
C
- 3 V
4. 7-1230
Specifications CD4532BMS
Input Voltage High VIH VDD = 10V, VOH > 9V, VOL < 1V 1, 2 +25oC, +125oC,
-55oC
+7 - V
Propagation Delay
E1 to E0
E1 to GS
TPHL1
TPLH1
VDD = 10V 1, 2, 3 +25oC - 110 ns
VDD = 15V 1, 2, 3 +25o
C - 85 ns
Propagation Delay
E1 to QM
DN to GS
TPHL2
TPLH2
VDD = 10V 1, 2, 3 +25o
C - 170 ns
VDD = 15V 1, 2, 3 +25oC - 125 ns
Propagation Delay
DN to QM
TPLH3
TPHL3
VDD = 10V 1, 2, 3 +25o
C - 220 ns
VDD = 15V 1, 2, 3 +25oC - 160 ns
Transition Time TTHL
TTLH
VDD = 10V 1, 2, 3 +25oC - 100 ns
VDD = 15V 1, 2, 3 +25o
C - 80 ns
Input Capacitance CIN Any Input 1, 2 +25o
C - 7.5 pF
NOTES:
1. All voltages referenced to device GND.
2. The parameters listed on Table 3 are controlled via design or process and are not directly tested. These parameters are characterized
on initial design release and upon design changes which would affect these characteristics.
3. CL = 50pF, RL = 200K, Input TR, TF < 20ns.
TABLE 4. POST IRRADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER SYMBOL CONDITIONS NOTES TEMPERATURE
LIMITS
UNITSMIN MAX
Supply Current IDD VDD = 20V, VIN = VDD or GND 1, 4 +25oC - 25 µA
N Threshold Voltage VNTH VDD = 10V, ISS = -10µA 1, 4 +25oC -2.8 -0.2 V
N Threshold Voltage
Delta
∆VTN VDD = 10V, ISS = -10µA 1, 4 +25oC - ±1 V
P Threshold Voltage VTP VSS = 0V, IDD = 10µA 1, 4 +25oC 0.2 2.8 V
P Threshold Voltage
Delta
∆VTP VSS = 0V, IDD = 10µA 1, 4 +25oC - ±1 V
Functional F VDD = 18V, VIN = VDD or GND 1 +25oC VOH >
VDD/2
VOL <
VDD/2
V
VDD = 3V, VIN = VDD or GND
Propagation Delay Time TPHL
TPLH
VDD = 5V 1, 2, 3, 4 +25oC - 1.35 x
+25oC
Limit
ns
NOTES: 1. All voltages referenced to device GND.
2. CL = 50pF, RL = 200K, Input TR, TF < 20ns.
3. See Table 2 for +25oC limit.
4. Read and Record
TABLE 5. BURN-IN AND LIFE TEST DELTA PARAMETERS +25oC
PARAMETER SYMBOL DELTA LIMIT
Supply Current - MSI-2 IDD ± 1.0µA
Output Current (Sink) IOL5 ± 20% x Pre-Test Reading
Output Current (Source) IOH5A ± 20% x Pre-Test Reading
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)
PARAMETER SYMBOL CONDITIONS NOTES TEMPERATURE
LIMITS
UNITSMIN MAX
5. 1231
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate
and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site http://www.intersil.com
Sales Office Headquarters
NORTH AMERICA
Intersil Corporation
P. O. Box 883, Mail Stop 53-204
Melbourne, FL 32902
TEL: (321) 724-7000
FAX: (321) 724-7240
EUROPE
Intersil SA
Mercure Center
100, Rue de la Fusee
1130 Brussels, Belgium
TEL: (32) 2.724.2111
FAX: (32) 2.724.22.05
ASIA
Intersil (Taiwan) Ltd.
Taiwan Limited
7F-6, No. 101 Fu Hsing North Road
Taipei, Taiwan
Republic of China
TEL: (886) 2 2716 9310
FAX: (886) 2 2715 3029
Specifications CD4532BMS
TABLE 6. APPLICABLE SUBGROUPS
CONFORMANCE GROUP
MIL-STD-883
METHOD GROUP A SUBGROUPS READ AND RECORD
Initial Test (Pre Burn-In) 100% 5004 1, 7, 9 IDD, IOL5, IOH5A
Interim Test 1 (Post Burn-In) 100% 5004 1, 7, 9 IDD, IOL5, IOH5A
Interim Test 2 (Post Burn-In) 100% 5004 1, 7, 9 IDD, IOL5, IOH5A
PDA (Note 1) 100% 5004 1, 7, 9, Deltas
Interim Test 3 (Post Burn-In) 100% 5004 1, 7, 9 IDD, IOL5, IOH5A
PDA (Note 1) 100% 5004 1, 7, 9, Deltas
Final Test 100% 5004 2, 3, 8A, 8B, 10, 11
Group A Sample 5005 1, 2, 3, 7, 8A, 8B, 9, 10, 11
Group B Subgroup B-5 Sample 5005 1, 2, 3, 7, 8A, 8B, 9, 10, 11, Deltas Subgroups 1, 2, 3, 9, 10, 11
Subgroup B-6 Sample 5005 1, 7, 9
Group D Sample 5005 1, 2, 3, 8A, 8B, 9 Subgroups 1, 2 3
NOTE: 1. 5% Parameteric, 3% Functional; Cumulative for Static 1 and 2.
TABLE 7. TOTAL DOSE IRRADIATION
CONFORMANCE GROUPS
MIL-STD-883
METHOD
TEST READ AND RECORD
PRE-IRRAD POST-IRRAD PRE-IRRAD POST-IRRAD
Group E Subgroup 2 5005 1, 7, 9 Table 4 1, 9 Table 4
TABLE 8. BURN-IN AND IRRADIATION TEST CONNECTIONS
FUNCTION OPEN GROUND VDD 9V ± -0.5V
OSCILLATOR
50kHz 25kHz
Static Burn-In 1
(Note 1)
6, 7, 9, 14, 15 1 - 5, 8, 10 - 13 16
Static Burn-In 2
(Note 1)
6, 7, 9, 14, 15 8 1 - 5, 10 - 13, 16
Dynamic Burn-
In (Note 1)
- 8 5, 16 6, 7, 9, 14, 15 1 - 4, 10 - 13
Irradiation
(Note 2)
6, 7, 9, 14, 15 8 1 - 5, 10 - 13, 16
NOTES:
1. Each pin except VDD and GND will have a series resistor of 10K ± 5%, VDD = 18V ± 0.5V
2. Each pin except VDD and GND will have a series resistor of 47K ± 5%; Group E, Subgroup 2, sample size is 4 dice/wafer, 0 failures,
VDD = 10V ± 0.5V
6. 7-1232
CD4532BMS
Logic Diagram
FIGURE 1. CD4532BMS LOGIC DIAGRAM
TRUTH TABLE
INPUT OUTPUT
E1 D7 D6 D5 D4 D3 D2 D1 D0 GS Q2 Q1 Q0 E0
0 X X X X X X X X 0 0 0 0 0
1 0 0 0 0 0 0 0 0 0 0 0 0 1
1 1 X X X X X X X 1 1 1 1 0
1 0 1 X X X X X X 1 1 1 0 0
1 0 0 1 X X X X X 1 1 0 1 0
1 0 0 0 1 X X X X 1 1 0 0 0
1 0 0 0 0 1 X X X 1 0 1 1 0
1 0 0 0 0 0 1 X X 1 0 1 0 0
1 0 0 0 0 0 0 1 X 1 0 0 1 0
1 0 0 0 0 0 0 0 1 1 0 0 0 0
X = Don’t Care Logic 1 ≡ High Logic 0 ≡ Low
16
9
7
6
14
15
8
VDD
Q0
Q1
Q2
GS
E0
VSS
11
12
13
1
2
3
4
10
5
D1
D2
D3
D4
D5
D6
D7
D0
EI
*
*
*
*
*
*
*
*
*
VDD
VSS
*ALL INPUTS PROTECTED BY
CMOS PROTECTION NETWORK
7. 7-1233
CD4532BMS
Typical Performance Characteristics
FIGURE 2. TYPICAL OUTPUT LOW (SINK) CURRENT
CHARACTERISTICS
FIGURE 3. MINIMUM OUTPUT LOW (SINK) CURRENT
CHARACTERISTICS
FIGURE 4. TYPICAL OUTPUT HIGH (SOURCE) CURRENT
CHARACTERISTICS
FIGURE 5. MINIMUM OUTPUT HIGH (SOURCE) CURRENT
CHARACTERISTICS
FIGURE 6. TYPICAL PROPAGATION DELAY (DN TO QM ) vs
SUPPLY VOLTAGE
FIGURE 7. TYPICAL PROPAGATION DELAY (E1 TO GS,
E1 TO EQ) vs LOAD CAPACITANCE
10V
5V
AMBIENT TEMPERATURE (TA) = +25o
C
GATE-TO-SOURCE VOLTAGE (VGS) = 15V
0 5 10 15
15
10
5
20
25
30
DRAIN-TO-SOURCE VOLTAGE (VDS) (V)
OUTPUTLOW(SINK)CURRENT(IOL)(mA)
10V
5V
AMBIENT TEMPERATURE (TA) = +25oC
GATE-TO-SOURCE VOLTAGE (VGS) = 15V
0 5 10 15
7.5
5.0
2.5
10.0
12.5
15.0
DRAIN-TO-SOURCE VOLTAGE (VDS) (V)
OUTPUTLOW(SINK)CURRENT(IOL)(mA)
-10V
-15V
AMBIENT TEMPERATURE (TA) = +25o
C
GATE-TO-SOURCE VOLTAGE (VGS) = -5V
0
-5
-10
-15
DRAIN-TO-SOURCE VOLTAGE (VDS) (V)
-20
-25
-30
0-5-10-15
OUTPUTHIGH(SOURCE)CURRENT(IOH)(mA)
-10V
-15V
AMBIENT TEMPERATURE (TA) = +25o
C
0
-5
-10
-15
DRAIN-TO-SOURCE VOLTAGE (VDS) (V)
0-5-10-15
OUTPUTHIGH(SOURCE)CURRENT(IOH)(mA)
GATE-TO-SOURCE VOLTAGE (VGS) = -5V
AMBIENT TEMPERATURE (TA) = +25oC
LOAD CAPACITANCE (CL) = 50pF600
500
400
300
200
100
0 2.5 7.5 12.55 10 15 17.5 20
PROPAGATIONDELAYTIME(tPHL,tPLH)(ns)
SUPPLY VOLTAGE (VDD) (V)
AMBIENT TEMPERATURE (TA) = +25oC
200
150
100
50
0
10 20 30 40 50 60 70 80 90 100
PROPAGATIONDELAYTIME(tPHL,tPLH)(ns)
LOAD CAPACITANCE (CL) (pF)
SUPPLY VOLTAGE (VDD) = 5V
10V
15V
9. 7-1235
CD4532BMS
Chip Dimensions and Pad Layout
FIGURE 12. 0-TO-9 KEYBOARD ENCODER
TRUTH TABLE
INPUT OUTPUT
D9 D8 D7 D6 D5 D4 D3 D2 D1 D0 GS Q3’ Q2’ Q1’ Q0’
1 X X X X X X X X X 0 1 0 0 1
0 1 X X X X X X X X 0 1 0 0 0
0 0 1 X X X X X X X 1 0 1 1 1
0 0 0 1 X X X X X X 1 0 1 1 0
0 0 0 0 1 X X X X X 1 0 1 0 1
0 0 0 0 0 1 X X X X 1 0 1 0 0
0 0 0 0 0 0 1 X X X 1 0 0 1 1
0 0 0 0 0 0 0 1 X X 1 0 0 1 0
0 0 0 0 0 0 0 0 1 X 1 0 0 0 1
0 0 0 0 0 0 0 0 0 1 1 0 0 0 0
X = Don’t Care Logic 1 ≡ High Logic 0 ≡ Low
Applications (Continued)
GS
Q2
Q1
Q0
EI
D7
D0
D8
D9
Q3’
Q2’
Q1’
Q0’
1/4 CD4071BMS
CD4532BMS
1/4 CD4071BMS
1/6 CD4069BMS
D7
D0
Dimensions in parenthesis are in millimeters and are
derived from the basic inch dimensions as indicated.
Grid graduations are in mils (10-3 inch).
METALLIZATION: Thickness: 11kÅ − 14kÅ, AL.
PASSIVATION: 10.4kÅ - 15.6kÅ, Silane
BOND PADS: 0.004 inches X 0.004 inches MIN
DIE THICKNESS: 0.0198 inches - 0.0218 inches