Optical Transconductance Varistor (Opticondistor): Potential replacement for high power switch modules by Stephen Sampayan of LLNL
1. Potential replacement for high power switch modules
LLNL-PRES-769514
This work was performed under the auspices of the
U.S. Department of Energy by Lawrence Livermore
National Laboratory under contract DE-AC52-07NA27344.
Lawrence Livermore National Security, LLC
Stephen Sampayan, Ph.D.
2. Future markets will be driven by
“power modules”
Market drivers include industrial
motor drives, transportation,
renewable energy, and power
Market share with existing
technology is presently
dominated by Asia/Pacific
manufacturers
Lawrence Livermore National Laboratory LLNL-PRES-769514
* www.yanoresearch.com/press/pdf/1095.pdf
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Market examples
(from “Market & Development Report”
Yole Development 2011/2012)
3. Fundamental difference:
• Existing technology=junction device (1925 Patent)
• Opticondistor=bulk conduction device (2013 Patent)
Withstands higher voltages and currents
• Overcomes the power and voltage limitations of existing
electronic devices
Direct control by light rather than an electrical signal
• Multiple devices can be cascaded while maintaining
isolation of the control circuitry
Developed in support of DoE particle accelerator
technology and RF production
Lawrence Livermore National Laboratory LLNL-PRES-769514
Opticondistor
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Optical
Modulation
Opticondistor
Energy
Storage
INPUT: Laser
Modulation
OUTPUT:
High Power
Load
Low level
electrical input
4. Induction motors consume ~50% of power
generated and are generally constant
speed*
Control of motor speed for off-peak use
significantly impacts total power
consumption
Present speed control systems can be
complex and expensive because of device
voltage limitations (right)
Higher voltage devices greatly simplify
circuitry, reduce cost and will expand use
Reduced generation requirements result
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Typical >100 kW class drive
*see for instance: H. Sarhan, "Energy Efficient Control of Three-Phase Induction Motor Drive," Energy and Power Engineering, Vol. 3 No. 2, 2011, pp. 107-112. doi: 10.4236/epe.2011.32014
Our goal
5. A brassboard system is being
fielded in 12 months for a defense
sponsor -TRL 4-5
We are doing preliminary work to
leverage LLNL laser expertise to
develop single hybrid modules -
TRL 2-3
Preliminary models project
competitive cost with existing
devices
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6. We have operated our device well beyond
the 5 x 105 Hz limit of power MOSFETs (right)
• higher inverter frequency significantly decreases
system transformer size (right)
• decreased transformer size also decreases
wasted energy (hysteresis loss)
We have demonstrated active control of
>20kV in a single device
We have demonstrated isolation between
“control input” and “high power output”
These properties are unique compared to
existing technology
Lawrence Livermore National Laboratory LLNL-PRES-769514
From: A. Nakagawa, Y. Kawaguchi and K.
Nakamura, Silicon Limit Electrical Characteristics
of Power Devices and ICs”, Proc. ISPS’08, 2008,
pp. 25-32
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High impact regime
Moderate Impact
regime
108
107
106
105
104
103
102
101
Power, VA
101 102 103 104 105 106
Frequency, Hz
SCR
IEGT
IGCT
IGBT
Module
Discrete
IGBT
MOS
FET
60 Hz, 425-A welder
transformer compared to an
equivalent 20-100 kHz welder
transformer
http://www.millerwelds.com/resources/articles/welding-inverters-decrease-
maintenance-downtime/
7. Standard technology
Electronically slow
• low efficiency and large system size
Voltage limited; <20 kV (typical 1 to 6 kV)
• requires significant system complexity
No isolation between high power and low
power control
Devices are complex microstructures
structures and require highly specialized
fabrication technology
• market entry requires $100M investment and
10 years to realize a return*
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Opticondistor
Electronically fast
• reduces transformer and other component sizes
• higher efficiency
Voltage unlimited; tests exceeded 30 kV
• simplified system implementation
Full electrical isolation between device and
control, enables cascading
Uses LLNL IP, simpler process
• market entry requires much less costly
infrastructure, faster return on investment
http://electroiq.com/blog/2012/11/gsa-working-group-evaluates-new-semiconductor-startup-models-to-attract-investors/
8. Genaro Mempin
+1 925 423 1121
mempin1@llnl.gov
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