This document provides a summary of simulation results and measurements for the MOSFET component TPCA8059-H. It includes 14 pages summarizing the MOSFET and body diode model parameters, as well as simulation versus measurement comparisons for characteristics including transconductance, Vgs-Id, Rds(on), gate charge, capacitance, switching time, output, forward current, and reverse recovery. The summaries include circuit diagrams, test conditions, parameters measured, and percent errors between simulation and measurement results.