This document summarizes the specifications and simulation results for a TLP3120 photocoupler made by Toshiba. It includes SPICE models for the photocoupler, evaluation circuits used in simulations, and comparison data between the simulation results and manufacturer measurements for various electrical characteristics like forward voltage, capacitance, off-state current, and switching times.

1. All Rights Reserved Copyright (C) Bee Technologies Corporation 2009
Device Modeling Report
Bee Technologies Inc.
COMPONENTS : PHOTOCOUPLER
PART NUMBER : TLP3120
MANUFACTURER : TOSHIBA
REMARK : OUTPUT MOSFET

2. All Rights Reserved Copyright (C) Bee Technologies Corporation 2009
TLP3120
1
2
3
6
5
4
Circuit Configuration
SPICE MODEL
*$
*PART NUMBER: TLP3120
*MANUFACTURER: TOSHIBA
*VDD=64V,IF=30mA
*All Rights Reserved Copyright (C) Bee Technologies Inc.2009
.SUBCKT TLP3120 1 2 3 4 5 6
V_VSense 1 N99682 0Vdc
M_M1 6 N99662 5 5 NMOS
M_M2 4 N99662 5 5 NMOS
C_C2 2 4 0.8p
D_D1 5 6 DIO
R_R2 2 4 100000G
C_C3 N99682 6 0.8p
D_D2 5 4 DIO
R_R3 N99682 6 100000G
D_D3 N99682 2 DTLP3120
E_E1 N99662 5 VALUE {
+ IF((I(V_Vsense))<0.2m,0,(17.248+3.1500*LOG10(I(V_Vsense)))) }
.MODEL NMOS NMOS
+ LEVEL=3 L=2.0000E-6 W=9.8000 RS=10.000E-3
+ RD=9.6500E-3 VTO=8.032 RDS=22.700E9 TOX=2.0000E-6
+ CGSO=2.3540E-6 CGDO=100.00E-12 RG=40
+ CBD=460.00E-12 MJ=1.5000 PB=3
+ IS=1.0000E-15 N=5 RB=1 GAMMA=0 KAPPA=0
.MODEL DTLP3120 D
+ IS=616.85E-15 N=1.8759 RS=1.4171
+ CJO=16.581E-12 M=.3861 VJ=.91842
+ BV=100 IBV=100.00E-6 TT=5.0000E-9
.MODEL DIO D
+ RS=1.0000E-3 CJO=1.0000E-12 M=.3333 VJ=.75
+ ISR=100.00E-12 BV=100 IBV=100.00E-6 TT=5.0000E-9
.ENDS
*$

3. All Rights Reserved Copyright (C) Bee Technologies Corporation 2009
C2
0.8p
R2
100000G
C3
0.8p
R3
100000G
D3
TLP3120
IN+
IN-
OUT+
OUT-
E1
IF((I(Vsense))<0.2m,0,(17.248+3.1500*LOG10(I(Vsense))))
EVALUE
VSense
0Vdc
M1
NMOS
M2
NMOS
D1
DIO
D2
DIO
5
4
2
1
6
0
Equivalent Circuit

4. All Rights Reserved Copyright (C) Bee Technologies Corporation 2009
V(U1:PIN1)
0.6V 0.8V 1.0V 1.2V 1.4V 1.6V 1.8V
I(Vsense)
100uA
1.0mA
10mA
100mA
Forward current Characteristics
Simulation result
Evaluation Circuit
0
Vsense
0Vdc
0
I1
U1
TLP3120

5. All Rights Reserved Copyright (C) Bee Technologies Corporation 2009
0.10
1.00
10.00
100.00
0.6 0.8 1.0 1.2 1.4 1.6
FowardCurrentIF(mA)
Foward Voltage VF (V)
Measurement
Simulation
Comparison Graph
Comparison Graph
Comparison Table
Ifwd (mA)
Vfwd(V)
% Error
Measurement Simulation
0.1 0.900 0.917 1.93
0.2 0.955 0.951 -0.41
0.5 1.010 0.996 -1.39
1 1.040 1.030 -0.93
2 1.070 1.065 -0.43
5 1.105 1.114 0.82
10 1.150 1.155 0.42
20 1.200 1.203 0.22
50 1.290 1.290 -0.03
100 1.395 1.394 -0.06

6. All Rights Reserved Copyright (C) Bee Technologies Corporation 2009
V(U1:PIN2)
100mV 1.0V 10V
I(V2)/(5/100n)
1.0pF
10pF
100pF
Capacitance Characteristics
Simulation result
Evaluation Circuit
V2
0Vdc
V1
TD = 0
TF = 10ns
PW = 20us
PER = 10us
V1 = 0
TR = 100n
V2 = 5
0
0
I1
0Adc
U1
TLP3120

7. All Rights Reserved Copyright (C) Bee Technologies Corporation 2009
1.00
10.00
100.00
0.1 1.0 10.0
TerminalCapacitanceCT(pF)
Reverse Voltage VR (V)
Measurement
Simulation
Comparison Graph
Comparison Graph
Comparison Table
VR (V)
CT (pF)
% Error
Measurement Simulation
0.1 16.737 16.732 -0.03
0.2 16.200 16.173 -0.17
0.5 14.805 14.834 0.20
1 13.283 13.288 0.04
2 11.446 11.407 -0.34
5 8.877 8.875 -0.02

8. All Rights Reserved Copyright (C) Bee Technologies Corporation 2009
0
VSense 0Vdc
0
V1
20VdcI1
0Adc
R1
100MEG
U1
TLP3120
V_V1
0V 5V 10V 15V 20V
I(VSense)
0A
0.4nA
0.8nA
1.2nA
OFF-state current Characteristics
Simulation result
Evaluation Circuit
Comparison Table
VOFF=20V Measurement Simulation % Error
IOFF(pA) 1200.000 1199.600 -0.03

9. All Rights Reserved Copyright (C) Bee Technologies Corporation 2009
0
I1
2.00005mAdc
R1
100MEG
VSense
0Vdc
0
V1
20Vdc
U1
TLP3120
V_V1
0V 5V 10V 15V 20V
I(VSense)
0A
0.5A
1.0A
1.5A
Trigger LED current Characteristics
Simulation result
Evaluation Circuit
Comparison Table
ION=1.25A Measurement Simulation % Error
IFT(mA) 2.0000 2.0001 0.00

10. All Rights Reserved Copyright (C) Bee Technologies Corporation 2009
V_V1
-400mV -200mV 0V 200mV 400mV
I(VSense)
-1.5A
-1.0A
-0.5A
0A
0.5A
1.0A
1.5A
ION-VON Characteristics
Simulation result
Evaluation Circuit
0
I1
5mAdc
R1
100MEG
VSense
0Vdc
0
V1
20Vdc
U1
TLP3120

11. All Rights Reserved Copyright (C) Bee Technologies Corporation 2009
-1.50
-1.00
-0.50
0.00
0.50
1.00
1.50
-0.4 -0.2 0.0 0.2 0.4
FowardCurrentIF(mA)
Foward Voltage VF (V)
Measurement
Simulation
Comparison Graph
Comparison Graph
Comparison Table
VON (V)
ION (A)
% Error
Measurement Simulation
-0.3 -1.250 -1.250 -0.02
-0.2 -0.835 -0.834 -0.10
-0.1 -0.420 -0.417 -0.62
0.0 0.000 0.000 0.00
0.1 0.420 0.417 -0.62
0.2 0.835 0.834 -0.10
0.3 1.250 1.250 -0.02

12. All Rights Reserved Copyright (C) Bee Technologies Corporation 2009
I1
TD = 1ms
TF = 10us
PW = 10m
PER = 20m
I1 = 0
I2 = 5m
TR = 10us
V2
20
RL 200
R1
100MEG
0 0
U1
TLP3120
Time
0s 5ms 10ms 15ms
1 V(RL:2) 2 I(U1:PIN1)
0V
6V
12V
18V
24V
1
0A
1.0mA
2.0mA
3.0mA
4.0mA
5.0mA
6.0mA
2
>>
Switching Time Characteristic
Circuit Simulation result
Evaluation circuit
Simulation Result
IF=5mA, VDD=20V
RL=200Ω
Measurement Simulation Error (%)
ton us 1600.000 1585.700 -0.89
toff us 200.000 203.023 1.51