The document is a device modeling report for a Schottky barrier diode (part number: scs220ag) manufactured by Rohm, detailing its circuit configuration and model parameters. It includes simulation results with comparisons of forward current characteristics, junction capacitance, and reverse characteristics alongside measurement and simulation data. Variations between simulated values and measured values are documented, indicating error percentages.

1. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014
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Device Modeling Report
Bee Technologies Inc.
COMPONENTS: SiC Schottky Barrier Diode
PART NUMBER: SCS220AG
MANUFACTURER: ROHM
REAMARK: POFESSIONAL MODEL

2. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014
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Circuit Configuration
DIODE MODEL PARAMETERS
PSpice
model
parameter
Model description
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
EG Energy-band Gap

3. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014
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R1
0.01m
V1
0Vdc
0
R2
100MEG
U1
SCS220AG_P
V_V1
0V 0.5V 1.0V 1.5V 2.0V 2.5V
I(R1)
1.0mA
10mA
100mA
1.0A
10A
100A
Forward Current Characteristics
Circuit Simulation result
Evaluation circuit

4. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014
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Comparison Graph
Circuit Simulation result
Comparison table
IF (A)
VF (V)
%Error
Measurement Simulation
0.001 0.700 0.684 -2.29
0.01 0.750 0.744 -0.80
0.1 0.804 0.806 0.25
1 0.890 0.884 -0.67
2 0.930 0.922 -0.86
5 1.000 1.000 0.00
10 1.120 1.127 0.62
20 1.330 1.350 1.50
50 2.000 1.980 -1.00
70 2.500 2.400 -4.00

5. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014
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0
V1
TD = 0
TF = 500ns
PW = 100us
PER = 500us
V1 = 0
TR = 10us
V2 = 650
V2
0Vdc
R1
100MEG
U1
SCS220AG_P
V(N16650)
10mV 100mV 1.0V 10V 100V 1.0KV
I(V2)/(650V/10us)
10p
100p
1.0n
10n
Junction Capacitance Characteristic
Circuit Simulation result
Evaluation circuit

6. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014
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Comparison Graph
Circuit Simulation result
Comparison table
VR (V)
CT (pF)
%Error
Measurement Simulation
0.01 1000.0 1003.0 0.30
0.1 980.0 961.0 -1.94
1 720.0 713.1 -0.96
10 305.0 299.0 -1.97
20 220.0 219.2 -0.36
50 150.0 148.1 -1.27
100 110.0 113.3 3.00
200 86.0 89.4 3.95
500 72.0 69.3 -3.75

7. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014
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V1
0Vdc
R1
100m
0
R2
100MEG
U1
SCS220AG_P
V_V1
0V 100V 200V 300V 400V 500V 600V
I(R1)
10nA
100nA
1.0uA
10uA
100uA
Reverse Characteristic
Circuit Simulation result
Evaluation circuit

8. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014
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Comparison Graph
Circuit Simulation result
Comparison table
IR (uA)
VR (V)
%Error
Measurement Simulation
0.01 391.00 388.40 -0.66
0.1 480.00 477.50 -0.52
3 600.00 600.50 0.08