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Device Modeling Report


COMPONENTS:DIODE/ SCHOTTKY RECTIFIER
PART NUMBER: 1N5819
MANUFACTURER: ON SEMICONDUCTOR




              Bee Technologies Inc.




 All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
PSpice model
                                   Model description
 parameter
     IS        Saturation Current
     N         Emission Coefficient
     RS        Series Resistance
    IKF        High-injection Knee Current
    CJO        Zero-bias Junction Capacitance
     M         Junction Grading Coefficient
     VJ        Junction Potential
    ISR        Recombination Current Saturation Value
     BV        Reverse Breakdown Voltage(a positive value)
    IBV        Reverse Breakdown Current(a positive value)
     TT        Transit Time
    EG         Energy-band Gap




          All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
Forward Current Characteristic


Circuit Simulation Result




Evaluation Circuit

               R1

               0.01m




                               D2
         V3
  0Vdc
                              D1N5819




                     0




               All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
Comparison Graph

Circuit Simulation Result




Simulation Result

                              Vfwd(V)            Vfwd(V)
           Ifwd(A)                                                    %Error
                            Measurement         Simulation
                    0.01            0.20                0.20                  -1.01
                    0.02            0.22                0.22                  -0.92
                    0.05            0.25                0.25                  -0.41
                     0.1            0.27                0.27                   1.11
                     0.2            0.30                0.30                   1.32
                     0.5            0.35                0.36                   1.68
                       1            0.42                0.41                  -1.21
                       2            0.50                0.49                  -2.25
                       5            0.65                0.66                   0.76




               All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
Junction Capacitance Characteristic

Circuit Simulation Result




Evaluation Circuit


                     V2


                          0Vdc

  V1 = 0      V1                      D2
  V2 = 20
  TD = 0
  TR = 1us                            D1N5819
  TF = 1us
  PW = 5s
  PER = 10s


                           0




                   All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
Comparison Graph

Circuit Simulation Result




Simulation Result

                             Cj(pF)               Cj(pF)
         Vrev(V)                                                       %Error
                          Measurement           Simulation
                      0          193.17               193.17                   0.00
                    0.1          181.27               183.93                   1.45
                    0.2          175.69               174.61                  -0.61
                    0.5          155.55               153.29                  -1.47
                      1          130.64               129.74                  -0.70
                      2           99.58               102.24                   2.61
                      5           65.99                 68.15                  3.17
                     10           48.00                 47.73                 -0.58
                     20           34.32                 32.72                 -4.89




               All Rights Reserved Copyright (C) Bee Technologies Inc. 2004

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SPICE MODEL of 1N5819 (Standard Model) in SPICE PARK

  • 1. Device Modeling Report COMPONENTS:DIODE/ SCHOTTKY RECTIFIER PART NUMBER: 1N5819 MANUFACTURER: ON SEMICONDUCTOR Bee Technologies Inc. All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
  • 2. PSpice model Model description parameter IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current CJO Zero-bias Junction Capacitance M Junction Grading Coefficient VJ Junction Potential ISR Recombination Current Saturation Value BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time EG Energy-band Gap All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
  • 3. Forward Current Characteristic Circuit Simulation Result Evaluation Circuit R1 0.01m D2 V3 0Vdc D1N5819 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
  • 4. Comparison Graph Circuit Simulation Result Simulation Result Vfwd(V) Vfwd(V) Ifwd(A) %Error Measurement Simulation 0.01 0.20 0.20 -1.01 0.02 0.22 0.22 -0.92 0.05 0.25 0.25 -0.41 0.1 0.27 0.27 1.11 0.2 0.30 0.30 1.32 0.5 0.35 0.36 1.68 1 0.42 0.41 -1.21 2 0.50 0.49 -2.25 5 0.65 0.66 0.76 All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
  • 5. Junction Capacitance Characteristic Circuit Simulation Result Evaluation Circuit V2 0Vdc V1 = 0 V1 D2 V2 = 20 TD = 0 TR = 1us D1N5819 TF = 1us PW = 5s PER = 10s 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
  • 6. Comparison Graph Circuit Simulation Result Simulation Result Cj(pF) Cj(pF) Vrev(V) %Error Measurement Simulation 0 193.17 193.17 0.00 0.1 181.27 183.93 1.45 0.2 175.69 174.61 -0.61 0.5 155.55 153.29 -1.47 1 130.64 129.74 -0.70 2 99.58 102.24 2.61 5 65.99 68.15 3.17 10 48.00 47.73 -0.58 20 34.32 32.72 -4.89 All Rights Reserved Copyright (C) Bee Technologies Inc. 2004