Device Modeling Report




COMPONENTS:
DIODE/ SCHOOTTKY RECTIFIER / STANDARD
PART NUMBER: M1FS4
MANUFACTURER: SHINDENGEN




              Bee Technologies Inc.


 All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
PSpice model
                                    Model description
 parameter
     IS         Saturation Current
     N          Emission Coefficient
     RS         Series Resistance
    IKF         High-injection Knee Current
    CJO         Zero-bias Junction Capacitance
     M          Junction Grading Coefficient
     VJ         Junction Potential
    ISR         Recombination Current Saturation Value
     BV         Reverse Breakdown Voltage(a positive value)
    IBV         Reverse Breakdown Current(a positive value)
     TT         Transit Time
    EG          Energy-band Gap




          All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
Forward Current Characteristic


Circuit Simulation Result




Evaluation Circuit


                      R1


                       0.001m

           V1
   0Vdc                                 D1



                                M1FS4




                       0




                All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
Comparison Graph


Circuit Simulation Result




Simulation Result

                              Vfwd(V)           Vfwd(V)
           Ifwd(A)                                                   %Error
                            Measurement        Simulation
                     0.1           0.330             0.340                     3.03
                     0.2           0.360             0.358                    -0.56
                     0.5           0.410             0.413                     0.73
                       1           0.475             0.477                     0.42
                       2           0.580             0.577                    -0.52
                       5           0.820             0.821                     0.12




               All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
Junction Capacitance Characteristic


Circuit Simulation Result




Evaluation Circuit


                         V2


                              0Vdc
   V1 = 0       V1
   V2 = 40
   TD = 0                                D1
   TR = 10ns
   TF = 50ns
   PW = 5us                             M1FS4
   PER = 10us



                              0




                     All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
Comparison Graph


Circuit Simulation Result




Simulation Result

                               Cj(pF)            Cj(pF)
           Vrev(V)                                                   %Error
                            Measurement        Simulation
                     0.1           210.00            200.00                   -4.76
                     0.2           205.00            212.00                    3.41
                     0.5           168.00            172.00                    2.38
                       1           135.00            137.00                    1.48
                       2           107.00            105.00                   -1.87
                       5            70.00             70.90                    1.29
                      10            51.00             51.70                    1.37
                      20            38.00             37.30                   -1.84
                      40            27.00             26.70                   -1.11




               All Rights Reserved Copyright (C) Bee Technologies Inc. 2004

SPICE MODEL of M1FS4 (Standard Model) in SPICE PARK

  • 1.
    Device Modeling Report COMPONENTS: DIODE/SCHOOTTKY RECTIFIER / STANDARD PART NUMBER: M1FS4 MANUFACTURER: SHINDENGEN Bee Technologies Inc. All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
  • 2.
    PSpice model Model description parameter IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current CJO Zero-bias Junction Capacitance M Junction Grading Coefficient VJ Junction Potential ISR Recombination Current Saturation Value BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time EG Energy-band Gap All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
  • 3.
    Forward Current Characteristic CircuitSimulation Result Evaluation Circuit R1 0.001m V1 0Vdc D1 M1FS4 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
  • 4.
    Comparison Graph Circuit SimulationResult Simulation Result Vfwd(V) Vfwd(V) Ifwd(A) %Error Measurement Simulation 0.1 0.330 0.340 3.03 0.2 0.360 0.358 -0.56 0.5 0.410 0.413 0.73 1 0.475 0.477 0.42 2 0.580 0.577 -0.52 5 0.820 0.821 0.12 All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
  • 5.
    Junction Capacitance Characteristic CircuitSimulation Result Evaluation Circuit V2 0Vdc V1 = 0 V1 V2 = 40 TD = 0 D1 TR = 10ns TF = 50ns PW = 5us M1FS4 PER = 10us 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
  • 6.
    Comparison Graph Circuit SimulationResult Simulation Result Cj(pF) Cj(pF) Vrev(V) %Error Measurement Simulation 0.1 210.00 200.00 -4.76 0.2 205.00 212.00 3.41 0.5 168.00 172.00 2.38 1 135.00 137.00 1.48 2 107.00 105.00 -1.87 5 70.00 70.90 1.29 10 51.00 51.70 1.37 20 38.00 37.30 -1.84 40 27.00 26.70 -1.11 All Rights Reserved Copyright (C) Bee Technologies Inc. 2004