BJT introduction

1. Vivekananda College of Engineering & Technology
[Sponsored by Vivekananda Vidyavardhaka Sangha, Puttur ®]
Affiliated to Visvesvaraya Technological University
Approved by AICTE New Delhi & Govt of Karnataka
TRP07
Rev 1.0
EC
09/06/2016
Three day Workshop on “PN-Junction and BJT devices”
A three day workshop on “PN-Junction and BJT devices” was held from April 11th
until April
13th
at MBA seminar hall, VCET, Puttur. Resource person Dr. P. Subbanna Bhat Started his presentation
with a beautiful saying “Never stop learning because life never stops teaching”. The workshop consisted
of five sessions.
1)P-N Junction
2)BJT devices
3)Diodes
These sessions covered various topics, started with classification of solids continued with
discussion on quantum numbers, energy level, covalent bonding, charge, electric field intensity,
Movement of free electron, relationship between field intensity and drift velocity, Definition of mobility,
conductivity, Concept of doping. In detail we have studied Majority carriers, minority carriers, step
change, step gradient, linearly gradient.
P-N junction formation-what happens if p and n type materials are in close contact, what happens
if p and n type materials are in close contact, what happens when voltage applied to p-n junction, what
happens if voltage of opposite polarity is applied to p-n junction, Voltage current characteristics, Charge
distribution, PN-junction-No bias condition, forward bias and reverse bias conditions also discussed.
The term PN junction diode is normally reserved for what may be called the basic form of diode,
although in reality the term applies to virtually any form of semiconductor diode. These diodes rely on the
properties of semiconductors for their operation. The theory behind semiconductor diodes uses the basic
semiconductor ideas and applies them to a junction between the two types of semiconductor, p-type
where the charge carriers are formed by holes and n-type where the charge carriers are electrons.
Reverse breakdown voltage, two types of breakdown voltage- Avalanche breakdown and zener
breakdown. Also discussed why Bipolar junction transistor removed?-because of negative temperature
coefficient. In between he discussed about voltage source, current source and energy souce.Then he
discussed completely on Bipolar junction transistor, about BJT terminals, doping condition, Bias
condition, Active region, Saturation region and cut off region.
Transistor operates in three regions namely active, saturation and cut-off region. Also explained
about transistor operation. He discussed about linear and nonlinear circuits. Linear circuits obey
homoginity and superposition theorem. Common anode and common cathode connection, finally about
rectifier circuit he explained.
The session was very helpful for us. Thank you
Nehru Nagar, Puttur - 574 203, DK, Karnataka State – INDIA.
Phone :+91-8251-235955, 234555 Fax : 236444, Web: www.vcetputtur.ac.in E-Mail: aemc@vcetputtur.ac.in