Analysis of Band Gap of Thermoelectric materials
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IOSR Journal of Applied Physics (IOSR-JAP) vol.7 issue.1 version.3
![IOSR Journal of Applied Physics (IOSR-JAP)
e-ISSN: 2278-4861.Volume 7, Issue 1 Ver. III (Jan.-Feb. 2015), PP 26-26
www.iosrjournals.org
DOI: 10.9790/4861-07132626 www.iosrjournals.org 26 | Page
Analysis of Band Gap of Thermoelectric materials
Ms. Neelam Swarnkar, Dr.Purnima Swarup Khare
Rajiv Gandhi Prodyogiki vishwavidhyalaya,Bhopal.
I. Introduction
Thermoelectric properties are based on some parameters as Figure of merit, thermal conductivity,
Electrical conductivity and Seebeck Coefficient. Electrical conductivity depends upon the energy Band Gap of
thermoelectric material. As soon as Band Gap reduces increases thermoelectric performance. Band Gap of
semiconductor tends to decrease as the temperature is increase. Because interatomic spacing increases when the
amplitude of atomic vibrations increases due to the increased thermal energy.
In this research paper, calculate the electrical property (Band Gap) by using the formula:-
Eg(T) = Eg(0) –
αT2
T + β
Where Eg (0), α and β are material Constant [2].
Energy Band Gap [eV]
0 K 300 K 600 K 900 K 1200 K 1500 K
Ge 0.74 0.66 0.54 0.40 0.27 0.13
Si 1.16 1.12 1.02 0.91 0.79 0.66
GaAs 1.51 1.42 1.27 1.12 0.96 0.80
According to table, as the temperature increases band gap of thermoelectric material decreases. Large
reduction of band gap found in germanium. Germanium is useful for doping or as a catalyst in any reaction for
enhancing the thermoelectric figure of merit.
References
[1]. Kittal, C, Introduction to solid state Physics, 6th
Ed, New York, John Wiley 1986,P 185.
[2]. Temperature dependence of Energy band gap, Ece-www.colorado.edu, Retrieved on 2013-04-03.
Material
Temp.](https://image.slidesharecdn.com/f07132626-151121105413-lva1-app6892/85/Analysis-of-Band-Gap-of-Thermoelectric-materials-1-320.jpg)
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Analysis of Band Gap of Thermoelectric materials
- 1. IOSR Journal of Applied Physics (IOSR-JAP) e-ISSN: 2278-4861.Volume 7, Issue 1 Ver. III (Jan.-Feb. 2015), PP 26-26 www.iosrjournals.org DOI: 10.9790/4861-07132626 www.iosrjournals.org 26 | Page Analysis of Band Gap of Thermoelectric materials Ms. Neelam Swarnkar, Dr.Purnima Swarup Khare Rajiv Gandhi Prodyogiki vishwavidhyalaya,Bhopal. I. Introduction Thermoelectric properties are based on some parameters as Figure of merit, thermal conductivity, Electrical conductivity and Seebeck Coefficient. Electrical conductivity depends upon the energy Band Gap of thermoelectric material. As soon as Band Gap reduces increases thermoelectric performance. Band Gap of semiconductor tends to decrease as the temperature is increase. Because interatomic spacing increases when the amplitude of atomic vibrations increases due to the increased thermal energy. In this research paper, calculate the electrical property (Band Gap) by using the formula:- Eg(T) = Eg(0) – αT2 T + β Where Eg (0), α and β are material Constant [2]. Energy Band Gap [eV] 0 K 300 K 600 K 900 K 1200 K 1500 K Ge 0.74 0.66 0.54 0.40 0.27 0.13 Si 1.16 1.12 1.02 0.91 0.79 0.66 GaAs 1.51 1.42 1.27 1.12 0.96 0.80 According to table, as the temperature increases band gap of thermoelectric material decreases. Large reduction of band gap found in germanium. Germanium is useful for doping or as a catalyst in any reaction for enhancing the thermoelectric figure of merit. References [1]. Kittal, C, Introduction to solid state Physics, 6th Ed, New York, John Wiley 1986,P 185. [2]. Temperature dependence of Energy band gap, Ece-www.colorado.edu, Retrieved on 2013-04-03. Material Temp.