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Guide:-
Mr. Sankalp Kulshrestha
Assistant Professor
SGVU, Jaipur
Synthesis of High ZT Materials and
Module Fabrication
Dalvir Singh
M.TECH(EE)
SGVU101254341
Co-guide:-
Dr. T.D. Senguttuvan
Principle Scientist
NPL, Delhi
:
•Development of n-type (Bi2Te3) TE material suitable for low temperature
applications with high ZT
•Development of p-type (Sb2Te3) TE material suitable for low temperature
applications with high ZT
• Demonstration of thermoemf by combining the above mentioned n- and p-
type TE materials
Objectives
Introduction
What is TEG ?
 Device that convert temperature Differences into electrical energy.
Basic principles - Seebeck effect
Heat input
Hot junction
Cold
junction
P-type N-type
Heat ejection
Power output
when the junctions of two different metals are
maintained at different temperature, the emf is
produced in the circuit.
Based on above phenomenon, waste heat recovery
could be utilized to produce useful electricity
Why choose Bismuth telluride and Antimony Telluride
1. Low Cost
2. High Electrical conductivity
3. Low Toxic
4. Easily available
Performance of a Thermoelectric(TE) material is defined by ZT given as :
A good thermal material must have
1. High seebeck coefficient
2. High electrical conductivity
3. low thermal conductivity
1. n-type TE material: Bismuth telluride (Bi2Te3)
Solvothermal Route
Mixed Bi and Te precursors, reducing agent, vessel filled upto 85% solvent
Check pH
Sealed the autoclave immediately and heated up to 1900C for 24h
Filtered the obtained precipitate, washed several times with distilled water,
ethanol, acetone and then dried in vacuum
Bi2Te3 powder
Fig.: XRD pattern of the as prepared samples using different solvents. All peaks indexed to hexagonal Bi2Te3
phase for methanol as a solvent
Fig.: SEM images of as prepared products with methanol as a solvent
(a) low and (b) high magnification
Bi2Te3 powder
HP at 4000C for 6 Hour under vacuum
Measure TE properties
HOT PRESSING
300 350 400 450 500 550 600
0.25
0.30
0.35
0.40
0.45
ZT
T(K)
• ZT=0.42 at 197˚C which comparatively less than best reported ZT (0.7) at 180C by hydrothermal
route (Fu et.al, CrystEngComm, 2012, 14, 2159)
• The main reason for less ZT value is the high thermal conductivity (). [  should be <1]
• This is due to the increased particle size -consequence of heat treatments.
• To decrease the value of thermal conductivity, some nano-range boundaries need to be introduced so
as to increase the phonon scattering. Bi2Te3 + BiTe (in different mol%)
Ref. => PbTe-SrTe(4mol%) [Biswas et.al, Nature, 489 (2012)] ZT increased to 2.2 from 1.7
Nano-Composite Approach
BiTe: Solvo thermal
Plate-like structure with edge to edge
thickness of 30-100nm
300 350 400 450 500 550 600
4
8
12
16
20
24
300 400 500 600
50
60
70
80
m)
T(K)
BiTeBi2Te3
Bi2Te3 +BiTe (2mol%)
Bi2Te3 +BiTe (4mol%)
Bi2Te3 +BiTe (6mol%)
Bi2Te3 +BiTe (8mol%)
Bi2Te3 +BiTe (10mol%)
m)
T(K)
300 350 400 450 500 550 600
-120
-80
-40
300 400 500 600
-60
-50
-40
S(V/K)
T(K)
BiTe
S(V/K)
T(K)
Bi2Te3
Bi2Te3+BiTe (2mol%)
Bi2Te3+BiTe (4mol%)
Bi2Te3+BiTe (6mol%)
Bi2Te3+BiTe (8mol%)
Bi2Te3+BiTe (10mol%)
300 350 400 450 500 550 600
0.5
1.0
1.5
2.0
2.5
3.0
300 400 500 600
30
35
40
45
50
P.F.(W/mK2)
T(K)
BiTe
P.F.(mW/mK2
)
Bi2Te3
Bi2Te3 +BiTe (2mol%)
Bi2Te3 +BiTe (4mol%)
Bi2Te3 +BiTe (6mol%)
Bi2Te3 +BiTe (8mol%)
Bi2Te3 +BiTe (10mol%)
TE properties
300 350 400 450 500 550 600
0.6
1.2
1.8
2.4
3.0
3.6
4.2
300 400 500 600
1.2
1.4
1.6
W/mK)
T(K)
BiTe
W/mK)
T(K)
Bi2Te3
Bi2Te3 +BiTe (2mol%)
Bi2Te3 +BiTe (4mol%)
Bi2Te3 +BiTe (6mol%)
Bi2Te3 +BiTe (8mol%)
Bi2Te3 +BiTe (10mol%)
300 350 400 450 500 550 600
0.4
0.8
1.2
1.6
2.0
300 400 500 600
0.008
0.016
0.024
0.032
0.040
0.048
ZT
T(K)
BiTeBi2Te3
Bi2Te3 +BiTe (2mol%)
Bi2Te3 +BiTe (4mol%)
Bi2Te3 +BiTe (6mol%)
Bi2Te3 +BiTe (8mol%)
Bi2Te3 +BiTe (10mol%)
ZT
T(K)
Solvothermal Route
Mixed Sb and Te precursors, reducing agent, vessel filled upto 85% solvent
Check pH
Sealed the autoclave immediately and heated up to 1900C for 24h
Filtered the obtained precipitate, washed several times with distilled water,
ethanol, acetone and then dried in vacuum
Sb2Te3 powder
2. p-type TE material: Antimony Telluride (Sb2Te3)
Fig.: XRD pattern using different solvents.
Water gave rhombohedral Sb2Te3 phase
XRD Analysis
10 20 30 40 50 60 70 80
Te
(0123)
(300)
(2110)
(0216)
(1019)
(125)
(0210)
(0018)
(205)
(119)
(1013)
(0015)
(110)
(0111)
(1010)
(018)
(015)
2degrees)
Sb
Sb
Sb
methanol
water
(006)
(0120)
Intensity(arb.units)
Te
SEM, HRTEM
Sb2Te3 powder
HP at 3000C for 6 Hour under vacuum
Measure TE properties
HOT pressing
320 360 400 440 480
0.1
0.2
0.3
0.4
0.5
0.6
ZT
T(K)
Our work
Dong.et.al, J.Mater.Chem, 2010
•Dong et.al reported ZT=0.58 at 420K Microwave assisted solvothermally
synthesized Sb2Te3
•To further increase ZT, PbTe (50-150nm) in different mol% mixed in Sb2Te3
powder(200-300nm)
References:
Li et.al, Appl. Phy. Lett., 104, 113905(2014); ZT=1.54 at 723K was obtained
for AgPbmSbTem+2 with 1 vol.% SiC nanoparticles
PbTe-SrTe(4mol%) [Biswas et.al, Nature, 489 (2012)], ZT increased to 2.2
from 1.7
Nano-Composite Approach
PbTe: Solvothermal Route
Cube-like structure with edge to edge
thickness of 50-150nm
300 350 400 450 500 550 600
10
20
30
40
50
60
Sb2Te3
Sb2Te3+PbTe (5mol%)
Sb2Te3+PbTe (10mol%)
(×104
S/m)
T(K)
~48%Increased
300 350 400 450 500 550 600
40
60
80
100
120
140
160 Sb2Te3
Sb2Te3+PbTe (5mol%)
Sb2Te3+PbTe (10mol%)
S(V/K)
T(K)
~ 23% Decreased
TE Properties
300 350 400 450 500 550 600
0.8
1.6
2.4
3.2
4.0
4.8
300 350 400 450 500 550 600
0.08
0.16
0.24
0.32
0.40
0.48 Sb2Te3
Sb2Te3+PbTe (5mol%)
Sb2Te3+PbTe (10mol%)
Cp(J/gK)
T(K)
Sb2Te3
Sb2Te3+PbTe (5mol%)
Sb2Te3+PbTe (10mol%)
W/mK)
T(K)
53%Decreased
300 350 400 450 500 550 600
0.4
0.8
1.2
1.6 Sb2Te3
Sb2Te3+PbTe (5mol%)
Sb2Te3+PbTe (10mol%)
ZT
T(K)
~49%Increased
300 350 400 450 500 550 600
0.8
1.2
1.6
2.0
2.4
2.8
3.2
3.6
~27%Decreased
Sb2Te3
Sb2Te3+PbTe (5mol%)
Sb2Te3+PbTe (10mol%)
P.F.(mW/mK
2
)
T(K)
~8%Decreased
Sb2Te3 pellet
Sb2Te3+PbTe-5mol% pellet
SEM Analysis
3. Demonstration of thermo-emf using n- and p- type TE material
n- and p-type
TE material-
Furnace
Temperature(F.T)
(oC )
Hot Side
Temperature(TH)
(oC )
Cold Side
Temperature(TC)
(oC )
∆T
(oC )
Voltage
(mV)
Sensitivity
(mV/oC)
100 43 36 07 2.14 0.305
200 88 49 39 4.02 0.103
300 133 61 72 6.6 0.091
400 152 72 80 8.5 0.106
Furnace
Temperature(F.T)
(oC )
Hot Side
Temperature
(TH)
(oC )
Cold Side
Temperature(TC)
(oC )
∆T
(oC )
Voltage
(mV)
Sensitivity
(mV/oC)
100 48 34 12 1.55 0.129
200 92 42 50 5.25 0.105
300 140 48 92 10.85 0.117
400 168 72 96 17.8 0.185
Pure TE Material
Composite TE Material
 The n-type (Bismuth Telluride) and p- type (Antimony
Telluride) materials were successfully synthesized
using Solvothermal route. XRD, SEM and TEM were
used to characterize as prepared samples for phase,
morphology and particle size
 The thermo e.m.f was measured for the fabricated
module using both pure and composite materials.
THANKYOU

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THERMOELECTRIC MATERIAL AND DEVICE.

  • 1. Guide:- Mr. Sankalp Kulshrestha Assistant Professor SGVU, Jaipur Synthesis of High ZT Materials and Module Fabrication Dalvir Singh M.TECH(EE) SGVU101254341 Co-guide:- Dr. T.D. Senguttuvan Principle Scientist NPL, Delhi
  • 2. : •Development of n-type (Bi2Te3) TE material suitable for low temperature applications with high ZT •Development of p-type (Sb2Te3) TE material suitable for low temperature applications with high ZT • Demonstration of thermoemf by combining the above mentioned n- and p- type TE materials Objectives
  • 3. Introduction What is TEG ?  Device that convert temperature Differences into electrical energy. Basic principles - Seebeck effect Heat input Hot junction Cold junction P-type N-type Heat ejection Power output when the junctions of two different metals are maintained at different temperature, the emf is produced in the circuit. Based on above phenomenon, waste heat recovery could be utilized to produce useful electricity
  • 4. Why choose Bismuth telluride and Antimony Telluride 1. Low Cost 2. High Electrical conductivity 3. Low Toxic 4. Easily available
  • 5. Performance of a Thermoelectric(TE) material is defined by ZT given as : A good thermal material must have 1. High seebeck coefficient 2. High electrical conductivity 3. low thermal conductivity
  • 6. 1. n-type TE material: Bismuth telluride (Bi2Te3) Solvothermal Route Mixed Bi and Te precursors, reducing agent, vessel filled upto 85% solvent Check pH Sealed the autoclave immediately and heated up to 1900C for 24h Filtered the obtained precipitate, washed several times with distilled water, ethanol, acetone and then dried in vacuum Bi2Te3 powder
  • 7. Fig.: XRD pattern of the as prepared samples using different solvents. All peaks indexed to hexagonal Bi2Te3 phase for methanol as a solvent Fig.: SEM images of as prepared products with methanol as a solvent (a) low and (b) high magnification
  • 8. Bi2Te3 powder HP at 4000C for 6 Hour under vacuum Measure TE properties HOT PRESSING 300 350 400 450 500 550 600 0.25 0.30 0.35 0.40 0.45 ZT T(K) • ZT=0.42 at 197˚C which comparatively less than best reported ZT (0.7) at 180C by hydrothermal route (Fu et.al, CrystEngComm, 2012, 14, 2159) • The main reason for less ZT value is the high thermal conductivity (). [  should be <1] • This is due to the increased particle size -consequence of heat treatments. • To decrease the value of thermal conductivity, some nano-range boundaries need to be introduced so as to increase the phonon scattering. Bi2Te3 + BiTe (in different mol%) Ref. => PbTe-SrTe(4mol%) [Biswas et.al, Nature, 489 (2012)] ZT increased to 2.2 from 1.7
  • 9. Nano-Composite Approach BiTe: Solvo thermal Plate-like structure with edge to edge thickness of 30-100nm
  • 10. 300 350 400 450 500 550 600 4 8 12 16 20 24 300 400 500 600 50 60 70 80 m) T(K) BiTeBi2Te3 Bi2Te3 +BiTe (2mol%) Bi2Te3 +BiTe (4mol%) Bi2Te3 +BiTe (6mol%) Bi2Te3 +BiTe (8mol%) Bi2Te3 +BiTe (10mol%) m) T(K) 300 350 400 450 500 550 600 -120 -80 -40 300 400 500 600 -60 -50 -40 S(V/K) T(K) BiTe S(V/K) T(K) Bi2Te3 Bi2Te3+BiTe (2mol%) Bi2Te3+BiTe (4mol%) Bi2Te3+BiTe (6mol%) Bi2Te3+BiTe (8mol%) Bi2Te3+BiTe (10mol%) 300 350 400 450 500 550 600 0.5 1.0 1.5 2.0 2.5 3.0 300 400 500 600 30 35 40 45 50 P.F.(W/mK2) T(K) BiTe P.F.(mW/mK2 ) Bi2Te3 Bi2Te3 +BiTe (2mol%) Bi2Te3 +BiTe (4mol%) Bi2Te3 +BiTe (6mol%) Bi2Te3 +BiTe (8mol%) Bi2Te3 +BiTe (10mol%) TE properties
  • 11. 300 350 400 450 500 550 600 0.6 1.2 1.8 2.4 3.0 3.6 4.2 300 400 500 600 1.2 1.4 1.6 W/mK) T(K) BiTe W/mK) T(K) Bi2Te3 Bi2Te3 +BiTe (2mol%) Bi2Te3 +BiTe (4mol%) Bi2Te3 +BiTe (6mol%) Bi2Te3 +BiTe (8mol%) Bi2Te3 +BiTe (10mol%) 300 350 400 450 500 550 600 0.4 0.8 1.2 1.6 2.0 300 400 500 600 0.008 0.016 0.024 0.032 0.040 0.048 ZT T(K) BiTeBi2Te3 Bi2Te3 +BiTe (2mol%) Bi2Te3 +BiTe (4mol%) Bi2Te3 +BiTe (6mol%) Bi2Te3 +BiTe (8mol%) Bi2Te3 +BiTe (10mol%) ZT T(K)
  • 12. Solvothermal Route Mixed Sb and Te precursors, reducing agent, vessel filled upto 85% solvent Check pH Sealed the autoclave immediately and heated up to 1900C for 24h Filtered the obtained precipitate, washed several times with distilled water, ethanol, acetone and then dried in vacuum Sb2Te3 powder 2. p-type TE material: Antimony Telluride (Sb2Te3)
  • 13. Fig.: XRD pattern using different solvents. Water gave rhombohedral Sb2Te3 phase XRD Analysis 10 20 30 40 50 60 70 80 Te (0123) (300) (2110) (0216) (1019) (125) (0210) (0018) (205) (119) (1013) (0015) (110) (0111) (1010) (018) (015) 2degrees) Sb Sb Sb methanol water (006) (0120) Intensity(arb.units) Te
  • 15. Sb2Te3 powder HP at 3000C for 6 Hour under vacuum Measure TE properties HOT pressing 320 360 400 440 480 0.1 0.2 0.3 0.4 0.5 0.6 ZT T(K) Our work Dong.et.al, J.Mater.Chem, 2010 •Dong et.al reported ZT=0.58 at 420K Microwave assisted solvothermally synthesized Sb2Te3 •To further increase ZT, PbTe (50-150nm) in different mol% mixed in Sb2Te3 powder(200-300nm) References: Li et.al, Appl. Phy. Lett., 104, 113905(2014); ZT=1.54 at 723K was obtained for AgPbmSbTem+2 with 1 vol.% SiC nanoparticles PbTe-SrTe(4mol%) [Biswas et.al, Nature, 489 (2012)], ZT increased to 2.2 from 1.7
  • 16. Nano-Composite Approach PbTe: Solvothermal Route Cube-like structure with edge to edge thickness of 50-150nm
  • 17. 300 350 400 450 500 550 600 10 20 30 40 50 60 Sb2Te3 Sb2Te3+PbTe (5mol%) Sb2Te3+PbTe (10mol%) (×104 S/m) T(K) ~48%Increased 300 350 400 450 500 550 600 40 60 80 100 120 140 160 Sb2Te3 Sb2Te3+PbTe (5mol%) Sb2Te3+PbTe (10mol%) S(V/K) T(K) ~ 23% Decreased TE Properties
  • 18. 300 350 400 450 500 550 600 0.8 1.6 2.4 3.2 4.0 4.8 300 350 400 450 500 550 600 0.08 0.16 0.24 0.32 0.40 0.48 Sb2Te3 Sb2Te3+PbTe (5mol%) Sb2Te3+PbTe (10mol%) Cp(J/gK) T(K) Sb2Te3 Sb2Te3+PbTe (5mol%) Sb2Te3+PbTe (10mol%) W/mK) T(K) 53%Decreased 300 350 400 450 500 550 600 0.4 0.8 1.2 1.6 Sb2Te3 Sb2Te3+PbTe (5mol%) Sb2Te3+PbTe (10mol%) ZT T(K) ~49%Increased 300 350 400 450 500 550 600 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 ~27%Decreased Sb2Te3 Sb2Te3+PbTe (5mol%) Sb2Te3+PbTe (10mol%) P.F.(mW/mK 2 ) T(K) ~8%Decreased
  • 20. 3. Demonstration of thermo-emf using n- and p- type TE material n- and p-type TE material-
  • 21. Furnace Temperature(F.T) (oC ) Hot Side Temperature(TH) (oC ) Cold Side Temperature(TC) (oC ) ∆T (oC ) Voltage (mV) Sensitivity (mV/oC) 100 43 36 07 2.14 0.305 200 88 49 39 4.02 0.103 300 133 61 72 6.6 0.091 400 152 72 80 8.5 0.106 Furnace Temperature(F.T) (oC ) Hot Side Temperature (TH) (oC ) Cold Side Temperature(TC) (oC ) ∆T (oC ) Voltage (mV) Sensitivity (mV/oC) 100 48 34 12 1.55 0.129 200 92 42 50 5.25 0.105 300 140 48 92 10.85 0.117 400 168 72 96 17.8 0.185 Pure TE Material Composite TE Material
  • 22.  The n-type (Bismuth Telluride) and p- type (Antimony Telluride) materials were successfully synthesized using Solvothermal route. XRD, SEM and TEM were used to characterize as prepared samples for phase, morphology and particle size  The thermo e.m.f was measured for the fabricated module using both pure and composite materials.