This presentation reviews the following paper: Chen, Siming, Wei Li, Jiang Wu, Qi Jiang, Mingchu Tang, Samuel Shutts, Stella N. Elliott et al. Electrically pumped continuous-wave III–V quantum dot lasers on silicon. Nature Photonics 10 (2016) 307-311.

1. Electrically pumped
continuous-wave III–V
quantum dot lasers on silicon

2. Introduction
 Silicon photonics:
 light modulation
 detection
 A reliable electrically pumped laser on a silicon substrate has remained.
 Reason for limit: Group IV semiconductors such as silicon and germanium
indirect bandgap
 Integration of III–V materials on a silicon platform with superior optical
properties
 Lasers with active regions formed from III–Vquantum dots (QDs)
 low threshold current density (Jth),
 reduced temperature sensitivity

3. QD Lasers are better
 QD Lasers are less sensitive to defects
than QW or bulky
 Defects in epitaxy: Threading
Dislocation=>less # involve

4. Threading Dislocation low impact

5. Fabricated Laser on silicon and results
Low threshold current (5QD)
High Pout
(a)Current threshold (12.5/QD)
(b)Nonlinear effect in Near-field of Laser
(c) it is important that lasers can operate at
high
temperature in c.w. mode
(d) sufficient operating lifetime.

6. Reference
 Chen, Siming, Wei Li, Jiang Wu, Qi Jiang, Mingchu Tang, Samuel Shutts, Stella
N. Elliott et al. "Electrically pumped continuous-wave III–V quantum dot lasers
on silicon." Nature Photonics 10 (2016): 307-311.

7. THE END