a

1. Review of SiC based Power Semiconductor Devices
and their Applications
Raksha Adappa, Suryanarayana K, Swathi Hatwar H and Ravikiran Rao M
Department of Electrical and Electronics Engineering
NMAM Institute of Technology, Nitte, Karkala, India 574110
Email: raksha@nitte.edu.in, suryanarayana@nitte.edu.in, hswathihatwar@nitte.edu.in and ravikiranraom@nitte.edu.in
Abstract—Silicon based Power Semiconductor Devices are
extensively used in power electronic applications for the last
few decades. Recent developments in power electronics require
devices with high power rating, switching frequency and op-
erating temperature but silicon based devices do not facilitate
these requirements. Wide band gap semiconductor devices like
Silicon Carbide and Gallium Nitride are gaining popularity in
overcoming the limitations of silicon based devices. The superior
material properties of WBG semiconductor: band gap, electric
field, thermal conductivity and electron mobility enables them
to handle the requirements. This paper reviews the material
properties of Silicon Carbide in comparison to Silicon. It also
provides an overview of available SiC based power semiconductor
devices and converter topologies.
Keywords—Power semiconductor devices, Silicon, Silicon car-
bide, Power converters
I. INTRODUCTION
The role of power electronics in the conversion of electric
power is crucial [1]. Power converters play a major role in
AC-DC or DC-AC conversion and ensure voltage regulation
to a desired value [2]. The diminution of conventional non
renewable sources of energy has led to use of renewable
sources of energy like solar, wind etc. Converters play key
role in the conversion of power from renewable energy sources.
The features that govern the performance of converter are: effi-
ciency, size, reliability and cost. Power semiconductor devices
(PSD) are a major component in power converters [3],[4]. High
blocking voltages, low power dissipation and high switching
frequency are the desirable properties of a PSD. Silicon based
switches used in the conventional converters pose limitation
in the blocking voltage, switching frequency and operating
temperature due to lower bandgap and electric breakdown field
[5]. Wide Bandgap devices like Silicon Carbide (SiC) and
Gallium Nitride(GaN) are gaining popularity and people are
migrating towards the new technology. The material properties
of Si and SiC are highlighted in Table I [6].
The strong atomic bond in SiC provides a bandgap of
3.2eV against 1.1eV in Si helps in increasing the operating
temperature of the device [3]. The critical electric field is
300kV/cm in silicon as against 2500kV/cm in SiC, allows
formation of thinner and heavily doped layers. This reduces
on state resistance which results in lower conduction losses
and improves the efficiency of the converter [3]. The drift
velocity of electron in SiC is twice of silicon which allows
faster removal of charges in depletion region reducing the
recovery charge & current and devices can be switched faster
than Silicon [7]. Higher switching frequency of the converter
reduces filter requirements leading to compact system size. The
thermal conductivity in SiC is 5W/cmK against 1.5W/cmK
resulting in low thermal resistance and faster removal of heat
out of the device which increases the operating temperature
range and reduces cooling requirement of the device [8].
TABLE I: Material properties of Si and SiC devices
Sl.No. Property Si 4H-SiC 6H-SiC Unit
1 Bandgap Eg 1.12 3.26 3.03 eV
2 Dielectric constant r 11.9 10.1 9.66 -
3 Electric Breakdown field
Ec
300 2200 2500 kV/cm
4 Electron mobility µn 1500 1000 500 cm2
/V.s
5 Hole mobilityµp 600 115 101 cm2
/V.s
6 Thermal conductivity λ 1.5 4.9 4.9 W/cm.K
7 Saturated electron drift
velocity vsat
1 2 2 cm/s
In general, a 1kV, 35A Silicon and SiC MOSFET have
specific on resistance of 380mΩ and 65mΩ respectively, which
indicates that SiC has lesser conduction loss [8]. Si and SiC
MOSFET have gate charge requirement of 305nC and 35nC
respectively indicating SiC devices could be operated with
higher switching frequency [5]. Maximum power dissipation
at a junction temperature of 25◦
C in silicon switch is 1.35kW
and SiC switch is 113.5W, power dissipation is reduced by a
factor of ten in similar rated Si and SiC switch. This results in
reduced heat sink requirement in the converter, which reduces
the size of the system employing SiC switches. Table II gives
a comparison of device parameters for Silicon and SiC device
[9], [10].
TABLE II: Device comparison parameters for SiC and Si
MOSFET
Sl.No. Parameter SiC MOS-
FET
Si MOS-
FET
1 Breakdown Voltage 1kV 1kV
2 Continuous Drain Current 35A 35A
3 Specific on resistance 65mΩ 380mΩ
4 Gate charge 35nC 305nC
5 Threshold voltage 1.8V 4V
6 Power Dissipation at junc-
tion temperature of 25 ◦
C
113W 1.35kW
In section I Introduction, material properties and advan-
tages of SiC in comparison to silicon is discussed. Theoretical
background of the PSD is presented in section II. Section
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2. III discusses the history, properties and limitations of the
available SiC based PSD. Section IV gives a brief overview
on the various converter topology using SiC devices. Section
V presents the conclusion.
II. THEORITICAL BACKGROUND
To analyze the behavior of semiconductor device a one
dimensional PN junction of uniformly doped acceptor with
density Na and donor density Nd as in Fig.1 is considered
Fig. 1: a) One dimensional PN Junction b) Formation of
depletion layer
Built-in potential (Φb) of PN junction results in depletion
region as in Fig.1. Now, the junction has three regions x xp,
x xn and depletion region in between p and n region. The
charge density (ρ) is zero in all regions of the PN junction
other than the depletion region.
One dimensional Poisson’s equation could be used to relate
electric field (E), potential (V) and charge density [11] as:
d2
V
dx2
=
dE
dx
=
ρ
εs
(1)
From (1) the depletion layer width could be obtained as:
W = xp − xn =
s
2εsΦb
q
1
Nd
+
1
Na
(2)
When the PN junction is reverse biased, applying a poten-
tial V, the potential increases to q(Φb+V). The width of the
depletion region is:
W =
s
2εs(Φb + V )
qN
(3)
Fig. 2: Breakdown voltage of semiconductor materials
When the junction breakdown occurs the current raises
rapidly and field reaches a critical value (Ec), critical field
results into a breakdown voltage (VB) given by:
VB =
εsE2
c
2qN
− Φb (4)
Normalized breakdown voltage (with respect to Si) is as in
Fig.2 [12] and could be observed that 4H-SiC has a breakdown
voltage 50 times higher than Si.
The width of depletion region when the reverse bias is
equal to the avalanche breakdown (2VB) can be expressed as
[11]:
W =
2VB
Ec
(5)
0.2 0.4 0.6 0.8 1
·104
0
2
4
6
·10−2
Vb in volts
Width
in
cm
Si
SiC
Fig. 3: Plot of blocking layer thickness and breakdown voltage
for silicon and SiC devices
For the same breakdown voltage the critical breakdown
voltage for SiC is 2200kV/cm against 300kV/cm of silicon,
hence SiC devices are seven times thinner than Si devices Fig.3
[13].
Rearranging equation [5], breakdown voltage (VB) is:
VB =
1
2
WEc (6)
The width of depletion zone reduces by ten times for SiC
devices and so the doping should increase in the depletion
region and doping is given by [14]:
qND =
εrε0Ec
W
(7)
r =
W
qµnND
=
4V 2
BR
εrε0µnE3
c
(8)
The on state resistance of silicon for various breakdown
voltages is ten times smaller than SiC devices as in Fig.4
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3. 0.2 0.4 0.6 0.8 1
·104
0
0.5
1
1.5
2
·10−3
Vb (V)
Rds(on)
of
Si/SiC
(ohm/cm)
0.2 0.4 0.6 0.8 1
·104
0
2
4
6
8
·10−6
Fig. 4: Plot of Breakdown voltage and on state resistance of
Si and SiC devices
Fig. 5: Basic structure of SiC diodes a) SBD b) JBS C) PiN
III. SILICON CARBIDE POWER DEVICES
Silicon Carbide based PSD: diodes, Bipolar junction tran-
sistors (BJT), Metal oxide field effect transistor (MOSFET),
Insulated gate bipolar transistors (IGBT) are widely available
in the market. The basic structure of the three silicon based
diodes Schottky barrier diode (SBD), Junction barrier schottky
(JBS) and PiN is shown in Fig.5.
The SiC Schottky diode is the combination of Schottky
metal and SiC. It consists of a N+
substrate which forms
the cathode and Schottky metal with n−
forms the anode
as shown in Fig.5a. SBD is a majority carrier device and
exhibits low voltage drop, superior switching and reduced
recovery time [15]. In comparison with Si PiN it has reduced
recovery time and charge reducing the stress on the device
and making it suitable for high frequency applications. The
main drawback of SBD is low blocking voltage and high
leakage current [16]. The SiC PiN diode consists of a heavily
doped substrate and an n−
intrinsic layer followed by diffusion
of p+
to complete the PiN structure. The silicon based PiN
diodes were limited for operation below 120◦
C and switching
frequency of 50kHz [17]. To eliminate the drawbacks of
Silicon PiN diodes, SiC based PiN diodes were developed
by modified techniques like basal mesa structure and Junction
termination extension (JTE) to achieve a breakdown voltage
of 10kV [18]. PiN diodes exhibit low forward voltage reverse
recovery charge and exhibit positive temperature coefficient
making it ideal for parallel operation [19]. Ultra high voltage
(UHV) SiC PiN diodes with breakdown voltage of 12-19kV
showed a 25% reduction in voltage drop and 30% reduction
in reverse recovery time in comparison with Silicon based
devices. This reduces conduction and switching loss and the
device is ideal for high power applications [20]. JBS consists
of an n+
layer which forms the cathode. p+
ohmic and N−
contacts shorted with a metal forms the anode. JBD combines
features of both schottky and PiN diodes. It has a schottky
like forward characteristics and PiN like reverse characteristics.
The conduction characteristics of SiC JBD are comparable
to Si diodes whereas switching characteristics is superior
to silicon diodes. JBS diode show reduced leakage current
and specific resistance. JBS show satisfactory performance at
increased temperature [21],[22].
The structure of SiC Vertical double-diffused MOSFETs
(VD-MOSFET) is similar to Si VD-MOSFET as shown in
Fig. 6 [23] The Double diffused MOS (DMOS) process failed
in SiC as diffusion is slow in SiC even at 1600◦
C.
Fig. 6: Structure of a) SiC VDMOSFET b)SiC UMOSFET
MOSFETs are used in power converters to operate in
switching regions. They play a vital role in power convert-
ers. The structure of a SiC U-shaped trench-gate MOSFET
(UMOSFET)is shown in Fig. 6 [23]. UMOS is preferred for
fabrication of SiC MOSFET as it depends on epitaxy and is
easier to fabricate. SiC UMOS process has drawbacks like
high field stressing at corners which restrict the breakdown
voltage to 250V and lower channel mobility [23]. Thus several
modified structures are available to overcome the drawbacks
of fabrication of SiC based VDMOSFET and UMOSFETs
[24],[25].
The first high voltage planar MOSFET with a blocking
voltage of 760V was developed in a 6H-SiC chip using Double
implant process (DIMOS), which eliminated the problem of
field stressing [24]. Low on state voltage and stable operation
of SiC MOSFET upto 125◦
C was obtained by using triple
implementation technique with lateral inversion channel, this
method was used to fabricate 6H-SiC device with block-
ing voltage of 600V and 1600V [25]. The passivation of
SiC/SiO2 interface states near the conduction band edge by
high temperature anneals improves the channel mobility in 4H-
SiC n channel MOSFETs [26]. Low specific resistance, power
loss and small leakage current was seen in 4H-SiC DMOSFET.
The device exhibits a positive temperature coefficient making it
suitable for parallel operations [27], [28]. Compared to Silicon
IGBT the SiC MOSFET showed slight improvement in on
state loss, less leakage current, reduced gate charge and lesser
switching losses. Thus SiC MOSFET can be operated at higher
frequency and temperature.
IV. APPLICATION
Power Semiconductor devices are a crucial elements of
power converters. The performance of the converter: efficiency,
speed and power ratings depend on the PSD used in the
converter. In this section, features of Buck, Boost, half and
full bridge converters employing SiC devices are compared
with Si devices.
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4. A. Buck Converter
DC-DC non-isolated step down converter employs a switch
and a diode is shown in Fig. 7. Reduction in switching
transients and reverse recovery current improves the converter
efficiency by 3-4% by using SiC diode against Si diode [29].
A buck converter using Silicon and Silicon carbide device is
evaluated by calculating conduction loss by comparing on-
resistance, threshold voltage and forward resistance of the
devices. At a frequency of 10kHz, silicon based converter
shows better performance at low temperature but fail to operate
beyond 150◦
C whereas SiC based converters exhibit better
performance at high temperature beyond 150◦
C [30]. In SiC
device the efficiency slightly drops with increase in tempera-
ture but it is suitable for high temperature operation [30]. SiC
MOSFET has reduced recovery current and switching power
loss against Si MOSFET [31].
Fig. 7: Basic structure of Buck converter
B. Boost Converter
A non-isolated step up converter employs a switch and
diode, shown in Fig. 8. SiC SBD used as free wheeling diode
in converter against Si SBD has reduced recovery current, turn
on and off time improving efficiency of the system making it
ideal for high power and frequency applications [32]. ZVS
technique implemented in boost converter reduces switching
loss in converter [33]. Efficiency of the boost converter is
improved by using SiC devices for PV applications which
require high output gain.
Fig. 8: Basic structure of Boost converter
C. Half Bridge Converter
An isolated half bridge converter employs two switches in
the primary and two diodes in the secondary as shown in Fig.
9. A half bridge resonant LLC converter using high voltage
super junction MOSFET was developed for PV applications
[34]. LLC converter has reduced EMI emission and can
operate at high frequency and reduced losses. SJ MOSFET has
reduced on state resistance and lower device capacitance and
better switching performance. A half bridge converter with SJ
MOSFET employing ZVS showed an efficiency of 94% [34].
A comparative study of bidirectional half bridge series resonant
converter employing Si and SiC switches for electric vehicles
shows improvement in efficiency when employing SiC against
Si switch [35].
Fig. 9: Basic structure of Half bridge converter
D. Full Bridge Converter
An isolated full bridge converter employs four switches
on the primary and four diodes on the secondary, shown in
Fig. 10. A full bridge DC-DC converter with regulated output
voltage of 12V for HEV application using Si and SiC devices
has a reduction of 60% power loss in SiC converters against
silicon converters. This results in improved efficiency and
reduced requirement of heat sink in the converter [36]. The
low parasitic capacitance, body diode and short turn on
turn off loss of SiC MOSFET results in improved switching
frequency, recovery time and efficiency of the converter. With
improved switching frequency the resonant tank size for SiC
MOSFET is reduced against silicon MOSFET [37]. The high
voltage SiC full bridge converters are gaining popularity in
Electric vehicles and induction heating application.
Fig. 10: Basic structure of Full bridge converter
V. CONCLUSION
This paper presents an overview of properties, devices and
converter topologies employing SiC devices. It is observed that
SiC devices exhibit better power rating, switching frequency
and operating temperature in comparison to silicon devices.
Thus they are suitable for high power and high frequency
applications. The superior device properties of SiC made them
suitable for all converter topologies with better performance
in comparison with silicon. SiC devices can replace silicon
devices in applications like solar, traction, electric vehicles,
converters and inverters.
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5. ACKNOWLEDGMENT
The authors would like to thank the management the
principal Dr. Niranjan N Chiplunkar of NMAM Institute
of Technology, Nitte, Karkala for providing a platform and
facilities to carryout the study on SiC devices.
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