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PN JUNCTIONDIODE
Biasing of PN junction diode
Forward bias
The formation of depletion layer in PN junction.
i)Reverse saturation current: In reverse bias condition
there will be negligible amount of current that will flow
through the device due to minority carrier which is called
as reverse saturation current.
ii. Knee voltage: The applied forward voltage at which the
PN junctions start conducting is called the cut-in voltage. It
is also known as knee voltage (Vk or Vz). The value of cut-
in voltage is 0.7 V for Silicon and 0.3 V for Germanium PN
junction diodes.
iii. Depletion layer: The region in PN junction which
comprises of immobile ions is called depletion region.
Biasing of PN junction diode
Reverse bias
The forward and reverse characteristics of PN junction diode
Cut in voltage (Knee voltage):
• The voltage at which the forward diode current starts
increasing rapidly is known as the cut in voltage of a
diode. The cut in voltage is very close to the barrier
potential. Cut in voltage is also called as knee voltage.
• Generally a diode is forward biased above the cut in
voltage. The cut in voltage for a silicon diode is 0.6 V and
that for a germanium diode is 0.2V.
Zener Diode
the V- I characteristics of zener diode.
• It indicates that the forward current is very small for
voltages below knee voltage and large for voltages above
knee (i.e. cut in) voltage.
• The reverse characteristics curve indicates that negligible
reverse saturation current flows until we reach the
breakdown (i.e. Zener) voltage Vz
• The breakdown has a very sharp knee, followed by an
almost vertical increase in reverse current.
• The voltage across the zener diode is approximately constant
and equal to Zener voltage VZ over most of the zener
breakdown region.
• It will come out of the breakdown region, when the applied
reverse voltage is reduced below the Zener breakdown
voltage.
zener diode voltage regulator.
Distinguish between PN junction diode and zener diode.
PN Junction Diode
• It is not properly doped to
control reverse breakdown.
• It conducts only in one
direction.
• It is always operated in
forward-bias condition.
• It has no sharp reverse
breakdown.
• used for rectification
Zener Diode
• It is properly doped to control
reverse breakdown.
• It conducts in both directions.
• It is always operated in reverse-
bias condition.
• It has quite sharp reverse
breakdown.
• It will not burn, but functions
properly in breakdown region
• used for voltage regulation.
FET (FIELD EFFECT TRANSISTOR)
FET (FIELD EFFECT TRANSISTOR)
FET (FIELD EFFECT TRANSISTOR)
FET (FIELD EFFECT TRANSISTOR) Biasing
FET (FIELD EFFECT TRANSISTOR) Biasing
MOSFET Biasing
MOSFET Biasing

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Bel ch 2

  • 2. Biasing of PN junction diode Forward bias
  • 3. The formation of depletion layer in PN junction.
  • 4.
  • 5. i)Reverse saturation current: In reverse bias condition there will be negligible amount of current that will flow through the device due to minority carrier which is called as reverse saturation current. ii. Knee voltage: The applied forward voltage at which the PN junctions start conducting is called the cut-in voltage. It is also known as knee voltage (Vk or Vz). The value of cut- in voltage is 0.7 V for Silicon and 0.3 V for Germanium PN junction diodes. iii. Depletion layer: The region in PN junction which comprises of immobile ions is called depletion region.
  • 6. Biasing of PN junction diode Reverse bias
  • 7. The forward and reverse characteristics of PN junction diode
  • 8. Cut in voltage (Knee voltage): • The voltage at which the forward diode current starts increasing rapidly is known as the cut in voltage of a diode. The cut in voltage is very close to the barrier potential. Cut in voltage is also called as knee voltage. • Generally a diode is forward biased above the cut in voltage. The cut in voltage for a silicon diode is 0.6 V and that for a germanium diode is 0.2V.
  • 10. the V- I characteristics of zener diode.
  • 11. • It indicates that the forward current is very small for voltages below knee voltage and large for voltages above knee (i.e. cut in) voltage. • The reverse characteristics curve indicates that negligible reverse saturation current flows until we reach the breakdown (i.e. Zener) voltage Vz • The breakdown has a very sharp knee, followed by an almost vertical increase in reverse current. • The voltage across the zener diode is approximately constant and equal to Zener voltage VZ over most of the zener breakdown region. • It will come out of the breakdown region, when the applied reverse voltage is reduced below the Zener breakdown voltage.
  • 12. zener diode voltage regulator.
  • 13. Distinguish between PN junction diode and zener diode. PN Junction Diode • It is not properly doped to control reverse breakdown. • It conducts only in one direction. • It is always operated in forward-bias condition. • It has no sharp reverse breakdown. • used for rectification Zener Diode • It is properly doped to control reverse breakdown. • It conducts in both directions. • It is always operated in reverse- bias condition. • It has quite sharp reverse breakdown. • It will not burn, but functions properly in breakdown region • used for voltage regulation.
  • 14.
  • 15.
  • 16.
  • 17. FET (FIELD EFFECT TRANSISTOR)
  • 18. FET (FIELD EFFECT TRANSISTOR)
  • 19. FET (FIELD EFFECT TRANSISTOR)
  • 20. FET (FIELD EFFECT TRANSISTOR) Biasing
  • 21. FET (FIELD EFFECT TRANSISTOR) Biasing