SlideShare a Scribd company logo
1 of 29
ANIL NEERUKONDA INSTITUTE OF TECHNOLOGY &
SCIENCES(A)
Department of Electronics and Communication Engineering
ECE 125 Basic Electronics Engineering
 Academic year : 2022-23
 Class & Section : 1/4 ECE-A
 Name of the Faculty : Mr.D.Anil Prasad
ANIL PRASAD DADI/ECE/ANITS
Contents
• Introduction
• Band Theory of solids
• Classification of materials based on Energy bands
• Mobility and Conductivity
ANIL PRASAD DADI/ECE/ANITS
Introduction
• There are three types of materials, based on their conducting
properties:
– conductors
– semiconductors
– insulators
ANIL PRASAD DADI/ECE/ANITS
Introduction
• At room temperature the conductivity
and resistivity of selected materials is
shown in table.
• Metals and alloys have the highest
conductivities followed by
semiconductors and then by
insulators
ANIL PRASAD DADI/ECE/ANITS
Introduction
• Resistivity vs. Temperature
ANIL PRASAD DADI/ECE/ANITS
Band Theory of Solids
• Energy band theory of solids indicate that the allowed energy states
for electrons are nearly continuous over certain ranges, called
energy bands, with forbidden energy gaps between the bands.
ANIL PRASAD DADI/ECE/ANITS
Band Theory of Solids
• When atoms are far apart electron
energies in atom1 and atom2 are same.
• The force of attraction of electron in
atom1 and its nucleus is same as the
force of attraction of electron in atom2
and its nucleus.
ANIL PRASAD DADI/ECE/ANITS
Band Theory of Solids
• When atoms are brought closer to
each other the columbic force of
attraction of electrons changes in
atom1 and atom2.
• The force of attraction between
electron in atom1 and nucleus in
atom2 changes. Similarly the force of
attraction between electron in atom2
and nucleus in atom1 changes.
ANIL PRASAD DADI/ECE/ANITS
Band Theory of Solids
• When force of attraction changes the
electron energy changes.
• Thus when atoms are brought closer
to each other the energies of electron
in each of the hydrogen atom changes
or splits into two energy levels.
ANIL PRASAD DADI/ECE/ANITS
Band Theory of Solids
• Si-1s22s22p63s23p2
• Consider N atom system which has
2N 1s states,
2N 2s states,
6N 2p states,
2N 3s states,
6N 3p states
ANIL PRASAD DADI/ECE/ANITS
Band Theory of Silicon
• As the atoms are brought closer
coupling of various atoms take place.
The energy levels split into bands
beginning with outer shell(n=3)
• The 3s states will tend to spread into
range of energies. Because there are
2N 3s states there should be 2N
separate energy states represented
by lines
ANIL PRASAD DADI/ECE/ANITS
Band Theory of Silicon
• Similarly 6N 3p states are shown by
6N separate energy states
represented by lines. Since N is very
large (5x1022 atoms/cm3)for si the
various levels are so close to each
other such that it represents a
continuous band
ANIL PRASAD DADI/ECE/ANITS
Band Theory of Silicon
• If further atomic separation is
reduced we can have a single
continuous band. As the distance
between atoms approaches the
equilibrium interatomic spacing of
Si (lattice constant of si, r0=5.43A)
this band splits into two bands
separated by an energy gap, Eg
ANIL PRASAD DADI/ECE/ANITS
Band Theory of Silicon
• The number of states in the
lower band and upper band
are exactly 4N states each.
The total number of
electrons are 4N electrons
in 8N states. So all 4N
electrons will occupy the
lower energies available.
The upper band will be
empty at T=00K
ANIL PRASAD DADI/ECE/ANITS
Band Theory of Silicon
• Valence Band:
Valence Band refers to the lower band in which valence electrons are
found in energy levels. It may have all the electrons it needs or only some
of them.
• Conduction Band:
Conduction band refers to the upper band where free electrons are not
present in any energy levels. The following allowed energy band is the
conduction band. It could be devoid of electrons entirely or only partially.
ANIL PRASAD DADI/ECE/ANITS
Band Theory of Silicon
• Forbidden energy Gap:
The Forbidden Energy Gap, Forbidden Band Gap, or Band Gap is the
name given to the energy gap between the valence band and conduction
band.
The amount of energy required by an electron to move from the
valence band into the conduction band is known as the energy gap, or
Eg. It's expressed in eV.
ANIL PRASAD DADI/ECE/ANITS
Band Theory of Silicon
ANIL PRASAD DADI/ECE/ANITS
Classification of materials based
on Energy Bands
ANIL PRASAD DADI/ECE/ANITS
Classification of materials based
on Energy Bands
ANIL PRASAD DADI/ECE/ANITS
•Insulator:
Material which do not conduct current is called insulator.
 The energy band gap in insulator is above 5 eV.
• Conductor:
 The energy band gap in a conductor, a material that conducts
electricity, is zero.
Classification of materials based
on Energy Bands
ANIL PRASAD DADI/ECE/ANITS
•Semiconductor:
 Semiconductor refers to materials with conductivity that is
between insulator and conductor.
 The energy band gap is quite narrow, around 1 eV.
Mobility and conductivity
• In any material along with atoms, ions are
also present.
• In any material impurities are present.
• When two different elements are present
then their electronic configuration is
different. The electrons can be taken or
given by each of the material and hence
ions are present.
ANIL PRASAD DADI/ECE/ANITS
Mobility and conductivity
• The +ve sign within circle represents the net
positive charge of nucleus and tightly bound
inner electrons.
• The dots represent the outer or valence
electrons in atom. These electrons doesn’t
belong to any particular atom. They have
lost their individuality and can wander freely
about from atom to atom in metal.
ANIL PRASAD DADI/ECE/ANITS
Mobility and conductivity
• The electrons in a metal are in random motion and on an
average there will be as many electrons passing through unit
area in any direction as in the opposite direction in a given time.
Hence the average current is zero.
ANIL PRASAD DADI/ECE/ANITS
Mobility and conductivity
• In a metal, electrons are in continuous
motion and collide with atoms and scattered
by the heavy ions and maintain different
velocities.
• When a constant electric field E is applied
to the metal, due to electrostatic force
electrons would be accelerated and the
velocity would increase indefinitely with
time. (The increase in electron velocity is
not due to collisions with the ions)
ANIL PRASAD DADI/ECE/ANITS
Mobility and conductivity
• At each inelastic collision with an ion an
electron loses energy and a steady state
condition is reached where a finite value of
drift speed vd is attained
• Drift velocity: It is average velocity
maintained by electrons while moving inside
material . Drift velocity is in the direction
opposite to that of the E.
• vdαE
• Vd=µE
ANIL PRASAD DADI/ECE/ANITS
Mobility and conductivity
ANIL PRASAD DADI/ECE/ANITS
Mobility and conductivity
ANIL PRASAD DADI/ECE/ANITS
References
ANIL PRASAD DADI/ECE/ANITS
• Robert L Boylestad, Electronic Devices And Circuit Theory, Prentice
Hall, seventh edition,2021
• Jacob Millman and Christos Halkias, Electronics Devices and
Circuits, Black edition, October,2017
Thank you
for listening

More Related Content

What's hot

ppt on Elementary Particles By Jyotibhooshan chaturvedi
ppt on Elementary Particles By Jyotibhooshan chaturvedippt on Elementary Particles By Jyotibhooshan chaturvedi
ppt on Elementary Particles By Jyotibhooshan chaturvedi
Jyotibhooshan Chaturvedi
 
Band structure(2)
Band structure(2)Band structure(2)
Band structure(2)
David David
 
Dislocations in FCC Metals_Radwan
Dislocations in FCC Metals_RadwanDislocations in FCC Metals_Radwan
Dislocations in FCC Metals_Radwan
Omar Radwan
 
Mechanism of graphene growth by chemical vapour deposition on transition metals
Mechanism of graphene growth by chemical vapour deposition on transition metals Mechanism of graphene growth by chemical vapour deposition on transition metals
Mechanism of graphene growth by chemical vapour deposition on transition metals
Ramachandra SN
 
Particle physics - Standard Model
Particle physics - Standard ModelParticle physics - Standard Model
Particle physics - Standard Model
David Young
 
Lecture 5 josephson effects
Lecture 5 josephson effectsLecture 5 josephson effects
Lecture 5 josephson effects
AllenHermann
 

What's hot (20)

Polarization in Dielectrics | Applied Physics - II | Dielectrics
Polarization in Dielectrics | Applied Physics - II | DielectricsPolarization in Dielectrics | Applied Physics - II | Dielectrics
Polarization in Dielectrics | Applied Physics - II | Dielectrics
 
Single electron transistomy
Single electron transistomySingle electron transistomy
Single electron transistomy
 
PLASTIC DEFORMATION
PLASTIC DEFORMATION PLASTIC DEFORMATION
PLASTIC DEFORMATION
 
An Essay on Dark Energy
An Essay on Dark EnergyAn Essay on Dark Energy
An Essay on Dark Energy
 
carrier and doping density
carrier and doping densitycarrier and doping density
carrier and doping density
 
Dark matter and dark energy
Dark matter and dark energyDark matter and dark energy
Dark matter and dark energy
 
ppt on Elementary Particles By Jyotibhooshan chaturvedi
ppt on Elementary Particles By Jyotibhooshan chaturvedippt on Elementary Particles By Jyotibhooshan chaturvedi
ppt on Elementary Particles By Jyotibhooshan chaturvedi
 
Band structure(2)
Band structure(2)Band structure(2)
Band structure(2)
 
Semiconductor theory
Semiconductor theorySemiconductor theory
Semiconductor theory
 
electromagnetic induction ( part 1 )
electromagnetic induction ( part 1 )electromagnetic induction ( part 1 )
electromagnetic induction ( part 1 )
 
Dislocations in FCC Metals_Radwan
Dislocations in FCC Metals_RadwanDislocations in FCC Metals_Radwan
Dislocations in FCC Metals_Radwan
 
Multiferroic materials
Multiferroic materialsMultiferroic materials
Multiferroic materials
 
Solid state physics d r joshi
Solid state physics d r joshiSolid state physics d r joshi
Solid state physics d r joshi
 
Doping crystal structures using vesta.pptx
Doping crystal structures using vesta.pptxDoping crystal structures using vesta.pptx
Doping crystal structures using vesta.pptx
 
Mechanism of graphene growth by chemical vapour deposition on transition metals
Mechanism of graphene growth by chemical vapour deposition on transition metals Mechanism of graphene growth by chemical vapour deposition on transition metals
Mechanism of graphene growth by chemical vapour deposition on transition metals
 
Particle physics - Standard Model
Particle physics - Standard ModelParticle physics - Standard Model
Particle physics - Standard Model
 
Elementary particles and their properties
Elementary particles and their propertiesElementary particles and their properties
Elementary particles and their properties
 
Lecture 5 josephson effects
Lecture 5 josephson effectsLecture 5 josephson effects
Lecture 5 josephson effects
 
Superconductivity
SuperconductivitySuperconductivity
Superconductivity
 
Ch5
Ch5Ch5
Ch5
 

Similar to UNIT-I_Energy_band_theory_of_solids.ppt

358011521-PPT-ELECTRICAL-PROPERTIES-band theory.pptx
358011521-PPT-ELECTRICAL-PROPERTIES-band theory.pptx358011521-PPT-ELECTRICAL-PROPERTIES-band theory.pptx
358011521-PPT-ELECTRICAL-PROPERTIES-band theory.pptx
khoi0209
 
semiconductors_jee_eng. .pdf
semiconductors_jee_eng.               .pdfsemiconductors_jee_eng.               .pdf
semiconductors_jee_eng. .pdf
RITASINGH445812
 
Electronic device lecture1
Electronic device lecture1Electronic device lecture1
Electronic device lecture1
Neeraj Gupta
 
Chapter 1_Basic concepts_Alexander_V32_Nov 2020.ppt
Chapter 1_Basic concepts_Alexander_V32_Nov 2020.pptChapter 1_Basic concepts_Alexander_V32_Nov 2020.ppt
Chapter 1_Basic concepts_Alexander_V32_Nov 2020.ppt
MubashirKhan230965
 
Introduction to semiconductor materials
Introduction to semiconductor materialsIntroduction to semiconductor materials
Introduction to semiconductor materials
Dr. Ghanshyam Singh
 
B.tech sem i engineering physics u ii chapter 1-band theory of solid
B.tech sem i engineering physics u ii chapter 1-band theory of solidB.tech sem i engineering physics u ii chapter 1-band theory of solid
B.tech sem i engineering physics u ii chapter 1-band theory of solid
Rai University
 
Fisika Modern (15) molecules andsolid_semiconductor
Fisika Modern (15) molecules andsolid_semiconductorFisika Modern (15) molecules andsolid_semiconductor
Fisika Modern (15) molecules andsolid_semiconductor
jayamartha
 

Similar to UNIT-I_Energy_band_theory_of_solids.ppt (20)

PHY SR SC M01 INTRO.pptx
PHY SR SC M01 INTRO.pptxPHY SR SC M01 INTRO.pptx
PHY SR SC M01 INTRO.pptx
 
358011521-PPT-ELECTRICAL-PROPERTIES-band theory.pptx
358011521-PPT-ELECTRICAL-PROPERTIES-band theory.pptx358011521-PPT-ELECTRICAL-PROPERTIES-band theory.pptx
358011521-PPT-ELECTRICAL-PROPERTIES-band theory.pptx
 
semiconductors_jee_eng. .pdf
semiconductors_jee_eng.               .pdfsemiconductors_jee_eng.               .pdf
semiconductors_jee_eng. .pdf
 
Class 12 th semiconductor part 1
Class 12 th semiconductor part 1Class 12 th semiconductor part 1
Class 12 th semiconductor part 1
 
Class 12 th semiconductor part 1
Class 12 th semiconductor part 1Class 12 th semiconductor part 1
Class 12 th semiconductor part 1
 
Band theory
Band theoryBand theory
Band theory
 
Electronic device lecture1
Electronic device lecture1Electronic device lecture1
Electronic device lecture1
 
Electronic device lecture1
Electronic device lecture1Electronic device lecture1
Electronic device lecture1
 
Electronic device lecture1
Electronic device lecture1Electronic device lecture1
Electronic device lecture1
 
Electronic Principles
Electronic PrinciplesElectronic Principles
Electronic Principles
 
Chapter 1_Basic concepts_Alexander_V32_Nov 2020.ppt
Chapter 1_Basic concepts_Alexander_V32_Nov 2020.pptChapter 1_Basic concepts_Alexander_V32_Nov 2020.ppt
Chapter 1_Basic concepts_Alexander_V32_Nov 2020.ppt
 
Semiconcuctor devices introduction
Semiconcuctor devices  introductionSemiconcuctor devices  introduction
Semiconcuctor devices introduction
 
Lecture-1.pdf
Lecture-1.pdfLecture-1.pdf
Lecture-1.pdf
 
Introduction to semiconductor materials
Introduction to semiconductor materialsIntroduction to semiconductor materials
Introduction to semiconductor materials
 
Band Theory1234.pptx
Band Theory1234.pptxBand Theory1234.pptx
Band Theory1234.pptx
 
Lecture1 semiconductor doping_vij
Lecture1 semiconductor doping_vijLecture1 semiconductor doping_vij
Lecture1 semiconductor doping_vij
 
B.tech sem i engineering physics u ii chapter 1-band theory of solid
B.tech sem i engineering physics u ii chapter 1-band theory of solidB.tech sem i engineering physics u ii chapter 1-band theory of solid
B.tech sem i engineering physics u ii chapter 1-band theory of solid
 
Semiconductors
SemiconductorsSemiconductors
Semiconductors
 
Chapter 4: Introduction to Semiconductors
Chapter 4: Introduction to SemiconductorsChapter 4: Introduction to Semiconductors
Chapter 4: Introduction to Semiconductors
 
Fisika Modern (15) molecules andsolid_semiconductor
Fisika Modern (15) molecules andsolid_semiconductorFisika Modern (15) molecules andsolid_semiconductor
Fisika Modern (15) molecules andsolid_semiconductor
 

Recently uploaded

一比一原版(Griffith毕业证书)格里菲斯大学毕业证成绩单学位证书
一比一原版(Griffith毕业证书)格里菲斯大学毕业证成绩单学位证书一比一原版(Griffith毕业证书)格里菲斯大学毕业证成绩单学位证书
一比一原版(Griffith毕业证书)格里菲斯大学毕业证成绩单学位证书
c3384a92eb32
 
21P35A0312 Internship eccccccReport.docx
21P35A0312 Internship eccccccReport.docx21P35A0312 Internship eccccccReport.docx
21P35A0312 Internship eccccccReport.docx
rahulmanepalli02
 

Recently uploaded (20)

Introduction-to- Metrology and Quality.pptx
Introduction-to- Metrology and Quality.pptxIntroduction-to- Metrology and Quality.pptx
Introduction-to- Metrology and Quality.pptx
 
一比一原版(Griffith毕业证书)格里菲斯大学毕业证成绩单学位证书
一比一原版(Griffith毕业证书)格里菲斯大学毕业证成绩单学位证书一比一原版(Griffith毕业证书)格里菲斯大学毕业证成绩单学位证书
一比一原版(Griffith毕业证书)格里菲斯大学毕业证成绩单学位证书
 
Signal Processing and Linear System Analysis
Signal Processing and Linear System AnalysisSignal Processing and Linear System Analysis
Signal Processing and Linear System Analysis
 
Call for Papers - Journal of Electrical Systems (JES), E-ISSN: 1112-5209, ind...
Call for Papers - Journal of Electrical Systems (JES), E-ISSN: 1112-5209, ind...Call for Papers - Journal of Electrical Systems (JES), E-ISSN: 1112-5209, ind...
Call for Papers - Journal of Electrical Systems (JES), E-ISSN: 1112-5209, ind...
 
engineering chemistry power point presentation
engineering chemistry  power point presentationengineering chemistry  power point presentation
engineering chemistry power point presentation
 
Circuit Breakers for Engineering Students
Circuit Breakers for Engineering StudentsCircuit Breakers for Engineering Students
Circuit Breakers for Engineering Students
 
Filters for Electromagnetic Compatibility Applications
Filters for Electromagnetic Compatibility ApplicationsFilters for Electromagnetic Compatibility Applications
Filters for Electromagnetic Compatibility Applications
 
Fuzzy logic method-based stress detector with blood pressure and body tempera...
Fuzzy logic method-based stress detector with blood pressure and body tempera...Fuzzy logic method-based stress detector with blood pressure and body tempera...
Fuzzy logic method-based stress detector with blood pressure and body tempera...
 
Seismic Hazard Assessment Software in Python by Prof. Dr. Costas Sachpazis
Seismic Hazard Assessment Software in Python by Prof. Dr. Costas SachpazisSeismic Hazard Assessment Software in Python by Prof. Dr. Costas Sachpazis
Seismic Hazard Assessment Software in Python by Prof. Dr. Costas Sachpazis
 
analog-vs-digital-communication (concept of analog and digital).pptx
analog-vs-digital-communication (concept of analog and digital).pptxanalog-vs-digital-communication (concept of analog and digital).pptx
analog-vs-digital-communication (concept of analog and digital).pptx
 
What is Coordinate Measuring Machine? CMM Types, Features, Functions
What is Coordinate Measuring Machine? CMM Types, Features, FunctionsWhat is Coordinate Measuring Machine? CMM Types, Features, Functions
What is Coordinate Measuring Machine? CMM Types, Features, Functions
 
Path loss model, OKUMURA Model, Hata Model
Path loss model, OKUMURA Model, Hata ModelPath loss model, OKUMURA Model, Hata Model
Path loss model, OKUMURA Model, Hata Model
 
21P35A0312 Internship eccccccReport.docx
21P35A0312 Internship eccccccReport.docx21P35A0312 Internship eccccccReport.docx
21P35A0312 Internship eccccccReport.docx
 
Presentation on Slab, Beam, Column, and Foundation/Footing
Presentation on Slab,  Beam, Column, and Foundation/FootingPresentation on Slab,  Beam, Column, and Foundation/Footing
Presentation on Slab, Beam, Column, and Foundation/Footing
 
handbook on reinforce concrete and detailing
handbook on reinforce concrete and detailinghandbook on reinforce concrete and detailing
handbook on reinforce concrete and detailing
 
Max. shear stress theory-Maximum Shear Stress Theory ​ Maximum Distortional ...
Max. shear stress theory-Maximum Shear Stress Theory ​  Maximum Distortional ...Max. shear stress theory-Maximum Shear Stress Theory ​  Maximum Distortional ...
Max. shear stress theory-Maximum Shear Stress Theory ​ Maximum Distortional ...
 
Maximizing Incident Investigation Efficacy in Oil & Gas: Techniques and Tools
Maximizing Incident Investigation Efficacy in Oil & Gas: Techniques and ToolsMaximizing Incident Investigation Efficacy in Oil & Gas: Techniques and Tools
Maximizing Incident Investigation Efficacy in Oil & Gas: Techniques and Tools
 
UNIT 4 PTRP final Convergence in probability.pptx
UNIT 4 PTRP final Convergence in probability.pptxUNIT 4 PTRP final Convergence in probability.pptx
UNIT 4 PTRP final Convergence in probability.pptx
 
History of Indian Railways - the story of Growth & Modernization
History of Indian Railways - the story of Growth & ModernizationHistory of Indian Railways - the story of Growth & Modernization
History of Indian Railways - the story of Growth & Modernization
 
Databricks Generative AI Fundamentals .pdf
Databricks Generative AI Fundamentals  .pdfDatabricks Generative AI Fundamentals  .pdf
Databricks Generative AI Fundamentals .pdf
 

UNIT-I_Energy_band_theory_of_solids.ppt

  • 1. ANIL NEERUKONDA INSTITUTE OF TECHNOLOGY & SCIENCES(A) Department of Electronics and Communication Engineering ECE 125 Basic Electronics Engineering  Academic year : 2022-23  Class & Section : 1/4 ECE-A  Name of the Faculty : Mr.D.Anil Prasad ANIL PRASAD DADI/ECE/ANITS
  • 2. Contents • Introduction • Band Theory of solids • Classification of materials based on Energy bands • Mobility and Conductivity ANIL PRASAD DADI/ECE/ANITS
  • 3. Introduction • There are three types of materials, based on their conducting properties: – conductors – semiconductors – insulators ANIL PRASAD DADI/ECE/ANITS
  • 4. Introduction • At room temperature the conductivity and resistivity of selected materials is shown in table. • Metals and alloys have the highest conductivities followed by semiconductors and then by insulators ANIL PRASAD DADI/ECE/ANITS
  • 5. Introduction • Resistivity vs. Temperature ANIL PRASAD DADI/ECE/ANITS
  • 6. Band Theory of Solids • Energy band theory of solids indicate that the allowed energy states for electrons are nearly continuous over certain ranges, called energy bands, with forbidden energy gaps between the bands. ANIL PRASAD DADI/ECE/ANITS
  • 7. Band Theory of Solids • When atoms are far apart electron energies in atom1 and atom2 are same. • The force of attraction of electron in atom1 and its nucleus is same as the force of attraction of electron in atom2 and its nucleus. ANIL PRASAD DADI/ECE/ANITS
  • 8. Band Theory of Solids • When atoms are brought closer to each other the columbic force of attraction of electrons changes in atom1 and atom2. • The force of attraction between electron in atom1 and nucleus in atom2 changes. Similarly the force of attraction between electron in atom2 and nucleus in atom1 changes. ANIL PRASAD DADI/ECE/ANITS
  • 9. Band Theory of Solids • When force of attraction changes the electron energy changes. • Thus when atoms are brought closer to each other the energies of electron in each of the hydrogen atom changes or splits into two energy levels. ANIL PRASAD DADI/ECE/ANITS
  • 10. Band Theory of Solids • Si-1s22s22p63s23p2 • Consider N atom system which has 2N 1s states, 2N 2s states, 6N 2p states, 2N 3s states, 6N 3p states ANIL PRASAD DADI/ECE/ANITS
  • 11. Band Theory of Silicon • As the atoms are brought closer coupling of various atoms take place. The energy levels split into bands beginning with outer shell(n=3) • The 3s states will tend to spread into range of energies. Because there are 2N 3s states there should be 2N separate energy states represented by lines ANIL PRASAD DADI/ECE/ANITS
  • 12. Band Theory of Silicon • Similarly 6N 3p states are shown by 6N separate energy states represented by lines. Since N is very large (5x1022 atoms/cm3)for si the various levels are so close to each other such that it represents a continuous band ANIL PRASAD DADI/ECE/ANITS
  • 13. Band Theory of Silicon • If further atomic separation is reduced we can have a single continuous band. As the distance between atoms approaches the equilibrium interatomic spacing of Si (lattice constant of si, r0=5.43A) this band splits into two bands separated by an energy gap, Eg ANIL PRASAD DADI/ECE/ANITS
  • 14. Band Theory of Silicon • The number of states in the lower band and upper band are exactly 4N states each. The total number of electrons are 4N electrons in 8N states. So all 4N electrons will occupy the lower energies available. The upper band will be empty at T=00K ANIL PRASAD DADI/ECE/ANITS
  • 15. Band Theory of Silicon • Valence Band: Valence Band refers to the lower band in which valence electrons are found in energy levels. It may have all the electrons it needs or only some of them. • Conduction Band: Conduction band refers to the upper band where free electrons are not present in any energy levels. The following allowed energy band is the conduction band. It could be devoid of electrons entirely or only partially. ANIL PRASAD DADI/ECE/ANITS
  • 16. Band Theory of Silicon • Forbidden energy Gap: The Forbidden Energy Gap, Forbidden Band Gap, or Band Gap is the name given to the energy gap between the valence band and conduction band. The amount of energy required by an electron to move from the valence band into the conduction band is known as the energy gap, or Eg. It's expressed in eV. ANIL PRASAD DADI/ECE/ANITS
  • 17. Band Theory of Silicon ANIL PRASAD DADI/ECE/ANITS
  • 18. Classification of materials based on Energy Bands ANIL PRASAD DADI/ECE/ANITS
  • 19. Classification of materials based on Energy Bands ANIL PRASAD DADI/ECE/ANITS •Insulator: Material which do not conduct current is called insulator.  The energy band gap in insulator is above 5 eV. • Conductor:  The energy band gap in a conductor, a material that conducts electricity, is zero.
  • 20. Classification of materials based on Energy Bands ANIL PRASAD DADI/ECE/ANITS •Semiconductor:  Semiconductor refers to materials with conductivity that is between insulator and conductor.  The energy band gap is quite narrow, around 1 eV.
  • 21. Mobility and conductivity • In any material along with atoms, ions are also present. • In any material impurities are present. • When two different elements are present then their electronic configuration is different. The electrons can be taken or given by each of the material and hence ions are present. ANIL PRASAD DADI/ECE/ANITS
  • 22. Mobility and conductivity • The +ve sign within circle represents the net positive charge of nucleus and tightly bound inner electrons. • The dots represent the outer or valence electrons in atom. These electrons doesn’t belong to any particular atom. They have lost their individuality and can wander freely about from atom to atom in metal. ANIL PRASAD DADI/ECE/ANITS
  • 23. Mobility and conductivity • The electrons in a metal are in random motion and on an average there will be as many electrons passing through unit area in any direction as in the opposite direction in a given time. Hence the average current is zero. ANIL PRASAD DADI/ECE/ANITS
  • 24. Mobility and conductivity • In a metal, electrons are in continuous motion and collide with atoms and scattered by the heavy ions and maintain different velocities. • When a constant electric field E is applied to the metal, due to electrostatic force electrons would be accelerated and the velocity would increase indefinitely with time. (The increase in electron velocity is not due to collisions with the ions) ANIL PRASAD DADI/ECE/ANITS
  • 25. Mobility and conductivity • At each inelastic collision with an ion an electron loses energy and a steady state condition is reached where a finite value of drift speed vd is attained • Drift velocity: It is average velocity maintained by electrons while moving inside material . Drift velocity is in the direction opposite to that of the E. • vdαE • Vd=µE ANIL PRASAD DADI/ECE/ANITS
  • 26. Mobility and conductivity ANIL PRASAD DADI/ECE/ANITS
  • 27. Mobility and conductivity ANIL PRASAD DADI/ECE/ANITS
  • 28. References ANIL PRASAD DADI/ECE/ANITS • Robert L Boylestad, Electronic Devices And Circuit Theory, Prentice Hall, seventh edition,2021 • Jacob Millman and Christos Halkias, Electronics Devices and Circuits, Black edition, October,2017