SPICE MODEL of TK8P25DA (Standard+BDS) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. Device Modeling Report
COMPONENTS: MOSFET (Model Parameters)
PART NUMBER: TK8P25DA
MANUFACTURER: TOSHIBA
REMARK: Body Diode (Model Parameters)
Bee Technologies Inc.
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
1

2. MOSFET MODEL
PSpice model
parameter
LEVEL
L
W
KP
RS
RD
VTO
RDS
TOX
CGSO
CGDO
CBD
MJ
PB
FC
RG
IS
N
RB
PHI
GAMMA
DELTA
ETA
THETA
KAPPA
VMAX
XJ
UO
Model description
Channel Length
Channel Width
Transconductance
Source Ohmic Resistance
Ohmic Drain Resistance
Zero-bias Threshold Voltage
Drain-Source Shunt Resistance
Gate Oxide Thickness
Zero-bias Gate-Source Capacitance
Zero-bias Gate-Drain Capacitance
Zero-bias Bulk-Drain Junction Capacitance
Bulk Junction Grading Coefficient
Bulk Junction Potential
Bulk Junction Forward-bias Capacitance Coefficient
Gate Ohmic Resistance
Bulk Junction Saturation Current
Bulk Junction Emission Coefficient
Bulk Series Resistance
Surface Inversion Potential
Body-effect Parameter
Width effect on Threshold Voltage
Static Feedback on Threshold Voltage
Mobility Modulation
Saturation Field Factor
Maximum Drift Velocity of Carriers
Metallurgical Junction Depth
Surface Mobility
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
2

3. Transconductance Characteristics
Circuit Simulation result
100
Measurement
Simulation
gfs (S)
10
1
VDS=10
0
0
2
4
6
8
V
10
Drain current ID (A)
Comparison table
gfs (S)
ID (A)
Measurement
Simulation
%Error
1
3.380
3.420
1.18
2
4.830
4.837
0.14
5
7.650
7.649
-0.01
10
10.817
10.815
-0.02
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
3

4. Vgs-Id Characteristics
Circuit Simulation result
12.5A
10.0A
5.0A
0A
0V
2V
4V
6V
8V
10V
-I(VDS)
V_VGS
Evaluation circuit
U1
TK8P25DA
VDS
10V
VGS
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
4

5. Comparison Graph
Circuit Simulation result
Measurement
Simulation
Drain current ID (A)
10
5
VDS=10V
0
0.0
2.0
4.0
6.0
8.0
10.0
Gate-source voltage VGS (V)
Comparison table
VGS (V)
ID (A)
Measurement
Simulation
%Error
1
3.540
3.568
0.79
2
3.810
3.810
0.00
5
4.260
4.291
0.73
10
4.820
4.832
0.25
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
5

6. Rds(on) Characteristics
Circuit Simulation result
3.8A
3.0A
2.0A
1.0A
0A
0V
0.4V
0.8V
1.2V
1.6V
-I(VDS)
V_VDS
Evaluation circuit
U1
TK8P25DA
VDS
VGS
10V
0
Test condition: VGS=10(V), ID=3.8(A)
Parameter
Unit
RDS(on)
Ω
Measurement
0.410
Simulation
0.411
%Error
0.24
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
6

7. Output Characteristics
Circuit Simulation result
10A
5V
6V
4.75V
10V
8A
4.5V
6A
4.25V
4A
4V
2A
3.75V
VGS=3.5V
0A
0V
2V
4V
6V
8V
10V
-I(VDS)
V_VDS
Evaluation circuit
U1
TK8P25DA
VDS
VGS
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
7

8. Capacitance Characteristics
Simulation result
Measurement
Simulation
Comparison table
Cbd (pF)
VDS (V)
Measurement
Simulation
%Error
0.1
638
637.11
-0.14
1
450
460.06
2.24
10
194
189.36
-2.39
100
39
40.87
4.79
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
8

9. Gate Charge Characteristics
Circuit Simulation result
12.5V
10.0V
7.5V
5.0V
2.5V
0V
0s
5ns
10ns
15ns
20ns
V(W1:3)
Time*1m
Evaluation circuit
D1
DMod
ID
7.5A
U1
TK8P25DA
W1
VDD
200V
+
I1 = 0
I2 = 1m
TF = 10n
TR = 10n
TD = 0
PER = 1
PW = 10m
IG
W
IOFF = 1mA
ION = 0
0
Test condition: VDD=200(V), VGS=10(V), ID=7.5(A)
Parameter
Unit
Measurement
Simulation
%Error
Qgs
nc
3.300
3.299
-0.03
Qgd
nc
5.300
5.296
-0.08
Qg
nc
16.000
12.085
-24.47
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
9

10. Switching Time Characteristics
Circuit Simulation result
14V
12V
10V
8V
6V
4V
2V
0V
1.84us
1.92us
V(G)
V(D)/10
2.00us
2.08us
2.16us 2.24us
Time
Evaluation circuit
L2
D
2
1
50nH
L1
30nH
R1
1
V1 = 0
V2 = 10V
TD = 2u
TR = 1n
TF = 1n
PW = 10u
PER = 1000u
U1
TK8P25DA
2
RL
26.4
G
50
VDD
100V
V1
0
Test condition: VDD=100(V), VGS=0/10(V), ID=3.8(A)
Parameter
Unit
ton
ns
Measurement
32.000
Simulation
35.481
%Error
10.88
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
10

11. Body Diode Forward Current Characteristics
Circuit Simulation result
100A
10A
1.0A
100mA
0V
-0.4V
I(VDS)
-0.8V
-1.2V
-1.6V
-2.0V -2.4V
V_VDS
Evaluation circuit
VDS
U1
TK8P25DA
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
11

12. Comparison Graph
Simulation result
100
Measurement
Drian reverse current IDR (A)
Simulation
10
1
0.1
0.0
0.4
0.8
1.2
1.6
2.0
2.4
Drain - source voltage -VDS (V)
Comparison table
-VDS (V)
IDR (A)
Measurement
Simulation
%Error
0.1
0.675
0.666
-1.33
0.2
0.701
0.700
-0.14
0.5
0.750
0.751
0.13
1
0.793
0.803
1.26
2
0.862
0.876
1.62
5
1.040
1.028
-1.15
10
1.230
1.221
-0.73
20
1.546
1.552
0.39
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
12

13. Reverse Recovery Characteristics
Circuit Simulation result
400mA
300mA
200mA
100mA
-0mA
-100mA
-200mA
-300mA
-400mA
9.5us
I(R1)
10.0us
10.5us
11.0us
11.5us
Time
Evaluation circuit
R1
50
V1 = -9.4V
V2 = 10.7V
TD = 150ns
TR = 5ns
TF = 5ns
PW = 10us
PER = 1ms
U1
TK8P25DA
V1
0
Comparison Measurement vs. Simulation
Parameter
Unit
trj
ns
Measurement
136.000
Simulation
132.496
%Error
-2.58
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
13

14. Reverse Recovery Characteristics
Reference
Measurement
Trj = 136(ns)
Trb = 72(ns)
Conditions: Ifwd = lrev = 0.2(A), Rl = 50
Example
Relation between trj and trb
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
14