SPICE MODEL of SSM3K16FU (Professional+BDP Model) in SPICE PARK
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This document summarizes the modeling and simulation of a Power MOSFET component. It includes: 1) A description of the MOSFET model parameters used in the PSpice simulation. 2) Simulation results and comparisons to measurement data for the MOSFET's transconductance, Vgs-Id curve, Rds(on), gate charge, capacitances and switching times. 3) Forward and reverse current characteristics along with the reverse recovery behavior. 4) A zener voltage characteristic simulation of the MOSFET's body diode.
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SPICE MODEL of SSM3K16FU (Professional+BDP Model) in SPICE PARK
- 1. Device Modeling Report COMPONENTS: Power MOSFET (Professional) PART NUMBER: SSM3K16FU MANUFACTURER: TOSHIBA Body Diode (Professional) / ESD Protection Diode Bee Technologies Inc. All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 2. MOSFET MODEL PSpice model Model description parameter LEVEL L Channel Length W Channel Width KP Transconductance RS Source Ohmic Resistance RD Ohmic Drain Resistance VTO Zero-bias Threshold Voltage RDS Drain-Source Shunt Resistance TOX Gate Oxide Thickness CGSO Zero-bias Gate-Source Capacitance CGDO Zero-bias Gate-Drain Capacitance CBD Zero-bias Bulk-Drain Junction Capacitance MJ Bulk Junction Grading Coefficient PB Bulk Junction Potential FC Bulk Junction Forward-bias Capacitance Coefficient RG Gate Ohmic Resistance IS Bulk Junction Saturation Current N Bulk Junction Emission Coefficient RB Bulk Series Resistance PHI Surface Inversion Potential GAMMA Body-effect Parameter DELTA Width effect on Threshold Voltage ETA Static Feedback on Threshold Voltage THETA Mobility Modulation KAPPA Saturation Field Factor VMAX Maximum Drift Velocity of Carriers XJ Metallurgical Junction Depth UO Surface Mobility All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 3. Transconductance Characteristic Circuit Simulation Result 0.25 0.2 gfs 0.15 0.1 Measurement Simulation 0.05 0.01 0.03 0.05 0.07 0.09 0.11 ID - Drain Current - A Comparison table gfs Id(A) Error(%) Measurement Simulation 0.010 0.080 0.083 3.750 0.020 0.100 0.105 5.000 0.050 0.175 0.179 2.286 0.100 0.245 0.250 2.041 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 4. Vgs-Id Characteristic Circuit Simulation result 1.0A 100mA 10mA 1.0mA 0.1V 1.0V 2.0V 3.0V I(V3) V_V2 Evaluation circuit V3 0Vdc U2 SSM3K16FU Vv ariable 3Vdc 3Vdc V2 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 5. Comparison Graph Circuit Simulation Result Measurement Simulation 0.081 0.061 ID - Drain Current - A 0.041 0.021 0.001 0 0.5 1 1.5 2 2.5 3 VGS - Gate to Source Voltage - V Simulation Result VGS(V) ID(A) Error (%) Measurement Simulation 0.001 1.040 1.043 0.288 0.002 1.070 1.074 0.374 0.005 1.120 1.130 0.893 0.010 1.200 1.202 0.167 0.020 1.270 1.295 1.969 0.050 1.450 1.490 2.759 0.100 1.700 1.705 0.294 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 6. Rds(on) Characteristic Circuit Simulation result 10mA 8mA 6mA 4mA 2mA 0A 0V 5mV 10mV 15mV 20mV I(V3) V_VDS Evaluation circuit V3 0Vdc U2 SSM3K16FU VDS 4Vdc 0Vdc VGS 0 Simulation Result ID=10mA, VGS=4V Measurement Simulation Error (%) R DS (on) 1.500 1.500 0.000 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 7. Gate Charge Characteristic Circuit Simulation result 10V 8V 6V 4V 2V 0V 0 0.2n 0.4n 0.6n 0.8n 1.0n 1.2n 1.4n 1.6n 1.8n 2.0n V(W1:3) Time*1mS Evaluation circuit V2 0Vdc U2 SSM3K16FU Dbreak PER = 1000u D1 PW = 600u W1 I2 TF = 10n + 0.6Adc TR = 10n TD = 0 - I2 = 1m W I1 IOFF = 0.1mA I1 = 0 ION = 0uA V1 17Vdc 0 Simulation Result VDD=17V,ID=0.6A Measurement Simulation Error (%) ,VGS=10V Qgs(nC) 0.100 0.100 0.000 Qgd(nC) 0.300 0.300 0.000 Qg(nC) 1.900 1.935 1.842 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 8. Capacitance Characteristic Measurement Simulation Simulation Result Cbd(pF) VDS(V) Error(%) Measurement Simulation 0.100 7.500 7.520 0.267 0.200 7.100 7.170 0.986 0.500 6.500 6.740 3.692 1.000 6.000 6.040 0.667 2.000 5.300 5.340 0.755 5.000 4.500 4.470 -0.667 10.000 3.800 3.870 1.842 20.000 3.400 3.350 -1.471 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 9. Switching Time Characteristic Circuit Simulation result 12V 10V 8V 6V 4V 2V 0V 1.000us 1.050us 1.100us 1.150us 1.200us 1.250us 1.300us V(L1:2)*4 V(L2:1)*3.333 Time Evaluation circuit 3 L2 50n U2 SSM3K16FU RL 1k R1 L1 2 V1 = 0 50 30nH VDD V2 = 5 V2 3Vdc TD = 2u R2 TR = 6n TF = 7n 50 PW = 2u PER = 10u 0 Simulation Result ID=10m A, VDD=3V Measurement Simulation Error(%) VGS=0/2.5V Ton(ns) 70.000 70.404 0.577 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 10. Output Characteristic Circuit Simulation result 250mA 10V 2.5V 2.1V 200mA 1.9V 150mA 1.7V 100mA 1.5V 50mA VGS=1.3V 0A 0V 0.5V 1.0V 1.5V 2.0V I(Vdsense) V_Vvariable Evaluation circuit Vdsense 0Vdc U2 SSM3K16FU Vv ariable 10Vdc 0Vdc Vstep 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 11. Forward Current Characteristic Circuit Simulation Result 100mA 10mA 1.0mA 0V 0.5V 1.0V 1.5V 2.0V I(R1) V_V1 Evaluation Circuit R1 0.01m V1 SSM3K16FU 0Vdc U2 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 12. Comparison Graph Circuit Simulation Result 0.1 Measurement Simulation Drain reverse current IDR(A) 0.01 0.001 0 0.5 1 1.5 2 Source-Drain voltage -VSD(V) Simulation Result VSD(V) IDR(A) Measuremen Simulation %Error 0.001 0.580 0.578 -0.345 0.025 0.700 0.709 1.286 0.050 0.760 0.753 -0.921 0.075 0.800 0.788 -1.500 0.100 0.820 0.819 -0.122 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 13. Reverse Recovery Characteristic Circuit Simulation Result 400mA 300mA 200mA 100mA -0mA -100mA -200mA -300mA -400mA 19.88us 19.96us 20.04us 20.12us 20.20us 20.28us I(R1) Time Evaluation Circuit R1 50 V1 = -9.4v V1 V2 = 10.85v U2 TD = 15n DSSM3K16FU TR = 10ns TF = 9ns PW = 20us PER = 100us 0 Compare Measurement vs. Simulation Measurement Simulation Error (%) Trj(ns) 23.200 23.178 -0.095 Trb(ns) 31.200 31.385 0.593 Trr(ns) 54.400 54.563 0.300 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 14. Reverse Recovery Characteristic Reference Trj=23.200(ns) Trb=31.200(ns) Conditions:Ifwd=lrev=0.2(A),Rl=50 Example Relation between trj and trb All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 15. Zener Voltage Characteristic Circuit Simulation Result 10mA 9mA 8mA 7mA 6mA 5mA 4mA 3mA 2mA 1mA 0A 0V 5V 10V 15V 20V 25V 30V 35V 40V 45V 50V I(R1) V_V1 Evaluation Circuit R1 0.01m U2 V1 SSM3K16FU 0Vdc R2 100MEG 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 16. Zener Voltage Characteristic Reference All Rights Reserved Copyright (c) Bee Technologies Inc. 2008