This document provides a device modeling report for a TOSHIBA N Channel MOSFET (part number 2SK4021). It includes the component specifications, equivalent circuit diagram, MOSFET model parameters, and simulation results for various electrical characteristics like transconductance, voltage-current relationship, capacitance, switching time, and more. Comparisons are made between measurement data and PSpice simulation results.

1. Device Modeling Report
COMPONENTS: MOSFET (Professional)
PART NUMBER: 2SK4021
MANUFACTURER: TOSHIBA
REMARK: N Channel Model
Body Diode (Professional) / ESD Protection Diode
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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2. Equivalent Circuit
D
S1
- -
+ +
R2
S
R1 10MEG DGD
10M CGD
S2
+ +
- -
Q1
S
G
S
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3. MOSFET MODEL
Pspice model
Model description
parameter
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Modility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility
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4. Transconductance Characteristic
Circuit Simulation Result
Comparison table
gfs
Id(A) Error(%)
Measurement Simulation
0.100 0.800 0.806 0.750
0.200 1.111 1.130 1.710
0.500 1.767 1.779 0.679
1.000 2.439 2.500 2.501
2.000 3.421 3.503 2.397
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5. Vgs-Id Characteristic
Circuit Simulation result
2.0A
1.0A
100mA
0V 2.0V 4.0V 6.0V
I(V3)
V_V1
Evaluation circuit
V3
0Vdc
U1
V2
2SK4021
V1 10
5.8
0
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6. Comparison Graph
Circuit Simulation Result
Simulation Result
VGS(V)
ID(A) Error (%)
Measurement Simulation
0.01 2.850 2.990 4.912
0.02 2.935 3.023 2.998
0.05 3.075 3.089 0.455
0.1 3.200 3.163 -1.156
0.2 3.350 3.269 -2.418
0.5 3.590 3.479 -3.092
1 3.825 3.718 -2.797
2 4.145 4.059 -2.075
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7. Rds(on) Characteristic
Circuit Simulation result
2.5A
2.0A
1.0A
0A
0V 1.0V 2.0V 3.0V 4.0V 5.0V
I(V2)
V_V3
Evaluation circuit
V2
0Vdc
U1
V3
0Vdc
2SK4021
V1
10
0
Simulation Result
ID=2.5 A, VGS=10V Measurement Simulation Error (%)
R DS (on) () 0.8 0.8 0
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8. Gate Charge Characteristic
Circuit Simulation result
10V
5V
0V
0s 2ns 4ns 6ns 8ns 10ns
V(W1:3)
Time*1m
Evaluation circuit
U1
ION = 0
IOFF = 100u
W1
+ 2SK4021 I2
D1
-
Dbreak
W 4.5
I1 = 0
I1 I2 = 1m
TD = 0 V1
TR = 10n
TF = 10n
PW = 200u
PER = 500u 200
0
Simulation Result
VDD=200V,ID=4.5A
,VGS=10V
Measurement Simulation Error (%)
Qgs(nc) 2.0000 2.0000 0.000
Qgd(nc) 3.5000 3.5038 0.109
Qg(nc) 10.000 10.000 0.000
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9. Capacitance Characteristic
Measurement
Simulation
Simulation Result
Cbd(pF)
VDS(V) Error(%)
Measurement Simulation
0.1 265 264.7 -0.113
0.2 260 259.6 -0.154
0.5 245 245.3 0.122
1 225 224.7 -0.133
2 190 192 1.053
5 135 133 -1.481
10 87 87 0.000
20 50 51 2.000
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10. Switching Time Characteristic
Circuit Simulation result
20V
10V
0V
1.9us 2.0us 2.1us 2.2us
V(U1:G) V(U1:D)/10
Time
Evaluation circuit
L1 R2
50nH
U1 40
R5 L2
V1
50
V1 = 0 30nH
V2 = 20 V2 2SK4021 100
TD = 2u R4
TR = 6n
TF = 7n 50
PW = 10u
PER = 30u
0
Simulation Result
ID=2.5A, VDD=100V
VGS=10V
Measurement Simulation Error(%)
Ton(ns) 20.00 20.207 1.035
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11. Output Characteristic
Circuit Simulation result
10A
5.5V
8A
5V
6A
4A 4.5V
2A VGS=4.0 V
0A
0V 20V 30V
I(Vdsense)
V_Vvariable
Evaluation circuit
Vdsense
0Vdc
U1
2SK4021
Vv ariable
Vstep
20
4
0
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12. Forward Current Characteristic
Circuit Simulation Result
10A
1.0A
100mA
0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V 1.4V 1.6V 1.8V
I(R1)
V_V1
Evaluation Circuit
R1
0.01m
V1
0Vdc U1 2SK4021
0
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13. Comparison Graph
Circuit Simulation Result
Simulation Result
VDS(V) VDS(V)
IDR(A) %Error
Measurement Simulation
0.100 0.675 0.672 -0.444
0.200 0.700 0.704 0.571
0.500 0.750 0.752 0.267
1.000 0.810 0.803 -0.864
2.000 0.875 0.877 0.229
5.000 1.050 1.049 -0.095
10.000 1.350 1.288 -4.593
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14. Reverse Recovery Characteristic
Circuit Simulation Result
400mA
200mA
0A
-200mA
-400mA
12.0us 13.6us 15.2us 16.8us 18.4us 20.0us
I(RL)
Time
Evaluation Circuit
RL
50
U1
V1 = -9.315 V1 D2SK4021
V2 = 10.72
TD = 0
TR = 10n
TF = 10n
PW = 15u
PER = 100u
0
Compare Measurement vs. Simulation
Measurement Simulation Error (%)
Trj(us) 328.000 328.109 0.033
Trb(us) 288.000 288.879 0.305
Trr(us) 616.000 616.988 0.160
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15. Reverse Recovery Characteristic Reference
Trj=388(ns)
Trb=288(ns)
Conditions:Ifwd=lrev=0.2(A),Rl=50
Example
Example
Relation between trj and trb
Relation between trj and trb
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16. Zener Voltage Characteristic
Circuit Simulation Result
10mA
5mA
0A
0V 5V 10V 15V 20V 25V 30V 35V 40V 45V 50V
I(R1)
V_V1
Evaluation Circuit
U1
R1
0.01m
R2
2SK4021
V1 1G
0Vdc
0
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17. Zener Voltage Characteristic Reference
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