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WElCOME
Topic: Racetrack Memory
PRESENTED BY
MUZAFAR AHMAD RATHER
M.Tech. 3rd Sem. Roll No: 11
Centre for Nanoscience and Nanotechnology,
Jamia Millia Islamia
Electronic SystemsModern Technology Driven by
Processing devices/systems
Electronic based
Information Storage devices/systems
Magnetic based(Digital)
Martin Hilbert, The World's Technological
Capacity to Store, Communicate, and
Compute Information 2011
Moore’s Law
Information Storage devices/systems
FLOPPY DISK
MAGNETIC
TAPE
OPTICAL DISK HARD DISK
DRIVE
SOLID STATE
DRIVE
WHAT’S NEXT
RaceTrack!
Mechanical movements thus Slow
More power
Not reliable
Easy damage
Technology limits
Memory as fast as SSD with high Storage Density, Low Power, Low Cost, Reliable
RACETRACK MEMORY
• Racetrack memory (or domain-wall
memory (DWM)) is a non-volatile
memory device under development
at IBM's. Named so because the
data "races" around the nanowire
"track“.
• Domains waals store the data and
spin polarized currents to have
moment of data over U shaped
ferromagnetic channel.
• In early 2008, a 3-bit version was
successfully demonstrated.
• Cheap, Reliable, Fast, Power(50
times less energy), 100 times more
data storage .
WORKING
PRINCIPLE1. Writing
a) Using magnetic domain wall injector
b) In domain wall injector current flows in one
direction for writing 0(Red) and in opposite
direction for writing bit 1(Blue)
c) Pulsed current perpendicular to the structure
pushes domains into or away from
reading/writing elements
2. Reading
a) Using Tunnel Magnetoresistance(TMR), effect that
occurs in a magnetic tunnel junction (MTJ), which is
a component consisting of two ferromagnets
separated by a thin insulator.
b) If the insulating layer is thin enough (typically a few
nanometers), electrons can tunnel from one
ferromagnet into the other.
c) Parallel-Low resistance, Antiparallel-High resistance
WORKING
PRINCIPLE3. Race Domain Waals Over Nanowire
a) The most challenging part of the
racetrack memory, It determines the
speed, efficiency and accuracy.
b) Movement of the domain walls can be
achieved by sending spin-polarized
current (PULSED TO AVOID HEATING)
10E8A/cm-sq through the racetrack.
c) The dynamics of moving domain walls
along the racetrack and controlling the
position of the domains to a high
degree of accuracy is under heavy
research.
• The tiny domains slides along the
notched nanowires at speeds greater
than 350m/s @ 10E8A/cm-sq, offers a
speed of 100 of gigabytes per second
CONSTRUCTIONAL OVERVIEW
A. Vertical racetrack (3D Density)
B. Horizontal racetrack (2D Density)
C. Storage Array( 100T Density More)
MATERIALS
Material selection for the ferromagnetic
racetrack material plays a large role in
determining the dynamics of domain
wall motion creation and movement.
Two type
1. Hard – ability to manipulate domain
walls and its width
eg: Iron, cobalt
2. Soft - eg: Crystalline cobalt iron(CoFe)
ADVANTAGES,CHALLANGES AND FUTURE
 No mechanical movement compared to HDD so speed is high
 Low cost compared to SSD
 Provides more storage density than HDD
 Provides more reliability
 Can store data for long time
 Less power (In 2006, data centres in the US, required 6.9 Gigawatts of power and if we use
racetrack memory for storage needs it will cut the power significantly)
 Recent challenges associated with this technology are current densities
required to move domain walls and the reliability of domain wall motion. In
early 2008, a 3-bit version was successfully demonstrated.
 For high current densities, giving rise to heat, pulsed current operation has
been proposed to overcome issues. In addition, heat sinks are still used.
 Domain wall pinning via patterned racetracks has demonstrated limited
success in reliably controlling multiple domain walls in a single racetrack.
 Will become universal memory within next few years.
 Being non-volatility, high read/write speeds, and potential for scalable ultra dense
memory make it an attractive type of memory and will replace all the HDD’s SSD’s and
flash drive in the near future.
 It allow every consumer to carry data equivalent to a college library on small portable
devices.
Thanks
References:
1. Memory on the racetrack , Stuart Parkin and See-Hun Yang, Nature
Nanotechnology 10, 195–198 (2015) doi:10.1038/nnano.2015.41 Published online
05 March 2015.
2. Article on Magnetic Racetrack Memory Storage by Derek M. Kita, Department of
Materials Science and Engineering, MIT (Dated: February 3, 2014)
3. The World's Technological Capacity to Store, Communicate, and Compute
Information, Martin Hilbert, et al. Science 332, 60 (2011); DOI:
10.1126/science.1200970
4. Book: Principles of Nanomagnetism by Guimarães, Alberto P. , Springer

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RaceTrack memory

  • 2. Topic: Racetrack Memory PRESENTED BY MUZAFAR AHMAD RATHER M.Tech. 3rd Sem. Roll No: 11 Centre for Nanoscience and Nanotechnology, Jamia Millia Islamia
  • 3. Electronic SystemsModern Technology Driven by Processing devices/systems Electronic based Information Storage devices/systems Magnetic based(Digital) Martin Hilbert, The World's Technological Capacity to Store, Communicate, and Compute Information 2011 Moore’s Law
  • 4. Information Storage devices/systems FLOPPY DISK MAGNETIC TAPE OPTICAL DISK HARD DISK DRIVE SOLID STATE DRIVE WHAT’S NEXT RaceTrack! Mechanical movements thus Slow More power Not reliable Easy damage Technology limits Memory as fast as SSD with high Storage Density, Low Power, Low Cost, Reliable
  • 5. RACETRACK MEMORY • Racetrack memory (or domain-wall memory (DWM)) is a non-volatile memory device under development at IBM's. Named so because the data "races" around the nanowire "track“. • Domains waals store the data and spin polarized currents to have moment of data over U shaped ferromagnetic channel. • In early 2008, a 3-bit version was successfully demonstrated. • Cheap, Reliable, Fast, Power(50 times less energy), 100 times more data storage .
  • 6. WORKING PRINCIPLE1. Writing a) Using magnetic domain wall injector b) In domain wall injector current flows in one direction for writing 0(Red) and in opposite direction for writing bit 1(Blue) c) Pulsed current perpendicular to the structure pushes domains into or away from reading/writing elements 2. Reading a) Using Tunnel Magnetoresistance(TMR), effect that occurs in a magnetic tunnel junction (MTJ), which is a component consisting of two ferromagnets separated by a thin insulator. b) If the insulating layer is thin enough (typically a few nanometers), electrons can tunnel from one ferromagnet into the other. c) Parallel-Low resistance, Antiparallel-High resistance
  • 7. WORKING PRINCIPLE3. Race Domain Waals Over Nanowire a) The most challenging part of the racetrack memory, It determines the speed, efficiency and accuracy. b) Movement of the domain walls can be achieved by sending spin-polarized current (PULSED TO AVOID HEATING) 10E8A/cm-sq through the racetrack. c) The dynamics of moving domain walls along the racetrack and controlling the position of the domains to a high degree of accuracy is under heavy research. • The tiny domains slides along the notched nanowires at speeds greater than 350m/s @ 10E8A/cm-sq, offers a speed of 100 of gigabytes per second
  • 8. CONSTRUCTIONAL OVERVIEW A. Vertical racetrack (3D Density) B. Horizontal racetrack (2D Density) C. Storage Array( 100T Density More) MATERIALS Material selection for the ferromagnetic racetrack material plays a large role in determining the dynamics of domain wall motion creation and movement. Two type 1. Hard – ability to manipulate domain walls and its width eg: Iron, cobalt 2. Soft - eg: Crystalline cobalt iron(CoFe)
  • 9. ADVANTAGES,CHALLANGES AND FUTURE  No mechanical movement compared to HDD so speed is high  Low cost compared to SSD  Provides more storage density than HDD  Provides more reliability  Can store data for long time  Less power (In 2006, data centres in the US, required 6.9 Gigawatts of power and if we use racetrack memory for storage needs it will cut the power significantly)  Recent challenges associated with this technology are current densities required to move domain walls and the reliability of domain wall motion. In early 2008, a 3-bit version was successfully demonstrated.  For high current densities, giving rise to heat, pulsed current operation has been proposed to overcome issues. In addition, heat sinks are still used.  Domain wall pinning via patterned racetracks has demonstrated limited success in reliably controlling multiple domain walls in a single racetrack.  Will become universal memory within next few years.  Being non-volatility, high read/write speeds, and potential for scalable ultra dense memory make it an attractive type of memory and will replace all the HDD’s SSD’s and flash drive in the near future.  It allow every consumer to carry data equivalent to a college library on small portable devices.
  • 10. Thanks References: 1. Memory on the racetrack , Stuart Parkin and See-Hun Yang, Nature Nanotechnology 10, 195–198 (2015) doi:10.1038/nnano.2015.41 Published online 05 March 2015. 2. Article on Magnetic Racetrack Memory Storage by Derek M. Kita, Department of Materials Science and Engineering, MIT (Dated: February 3, 2014) 3. The World's Technological Capacity to Store, Communicate, and Compute Information, Martin Hilbert, et al. Science 332, 60 (2011); DOI: 10.1126/science.1200970 4. Book: Principles of Nanomagnetism by Guimarães, Alberto P. , Springer