this is the seminar report on ssd

1. A
SEMINAR REPORT
ON
THIRD GENERATION SOLID STATE DRIVE
SSD
Submitted to: Submitted By:
Mr. Mukesh Chauhan Atishay Jain
Mr. Manik Chand 1322531017
ECE 3rd Year
2013-17

2. PREFACE
I havemade this report file on the topicSSD. I have tried my best to
elucidate all the relevant details to be included in my report.While in the
beginningI have tried to give a general view about this topic.
My effort and wholehearted co-operationof each and everyone has
ended on a successful note . I express my sincere gratitude to Mr.
Mukesh Chauhanand Mr. Manikwho assistingme throughout the
preparationofthis topic.
I thankhim for providingme the reinforcement,confidence and most
importantlythe trackfor the topic wheneverI needed it.

3. CONTENTS
 ABSTRACT
 INTRODUCTION
 THE PROBLEMS WITH TODAY’S HARD DISKS
 ARCHITECTURE OF SSD
 MEMORY
 CONTROLLER
 COMPARISON OF SSD & HDD
 ADVANTAGES& DISSADVANTAGES
 APPLICATIONS OF SSD
 CONCLUSION
 REFERENCE

4. THIRD GENERATION SOLID STATE DRIVE
SSD
ABSTRACT
A solid state drive (SSD) is a non-volatile memory system that emulates a magnetic hard disk
drive (HDD). SSDs do not contain any moving parts, however, and depend on flash memory
chips to store data. With proper design, an SSD is able to provide high data transfer rates,
low access time, improved tolerance to shock and vibration, and reduced power
consumption. For some applications, the improved performance and durability outweigh
the higher cost of an SSD relative to an HDD.
Using flash memory as a hard disk replacement is not without challenges. The nano-scale of
the memory cell is pushing the limits of semiconductor physics. Extremely thin insulating
glass layers are necessary for proper operation of the memory cells. These layers are
subjected to stressful temperatures and voltages, and their insulating properties deteriorate
over time. Quite simply, flash memory can wear out. Fortunately, the wear-out physics are
well understood and data management strategies are used to compensate for the limited
lifetime of flash memory.
Flash memory was invented by Dr. Fujio Masuoka while working for Toshiba in 1984. The
name "flash" was suggested because the process of erasing the memory contents reminded
him of the flash of a camera. Flash memory chips store data in a large array of floating gate
metal–oxide–semiconductor (MOS) transistors. Silicon wafers are manufactured with
microscopic transistor dimension, now approaching 40 nanometers.
Intel Corporation introduces its highly anticipated third-generation solid-state drive (SSD)
the Intel Solid-State Drive 320 Series. Based on its industry-leading 25-nanometer (nm)
NAND flash memory, the Intel SSD 320 replaces and builds on its high-performing Intel X25-
M SATA SSD. Delivering more performance and uniquely architected reliability features, the
new Intel SSD 320 offers new higher capacity models, while taking advantage of cost
benefits from its 25nm process with an up to 30 percent price reduction over its current
generation.

5. INTRODUCTION OF SSD
In 1995, M-Systems introduced firstflash-based solid-statedrives.
A solid-state drive(SSD) is a data storagedevice that uses solid state
memory to store persistentdata and SSDs usesame I/O interfaces developed
for hard disk drives.
SSDs do not have any moving mechanical components, which distinguishes
them fromtraditional magnetic disks such as hard disk drives (HDDs).
SSDs useNAND-based flash memory or DRAMto storedata.
A solid-state drive(SSD) is a data storage device that uses solid-state memory
to store persistentdata.
SSDs do not have any moving mechanical components, which distinguishes
them fromtraditional magnetic disks such as HDDs or floppy disks.
SSDs useNAND-based flash memory or DRAMto storedata.

6. THE PROBLEMS WITH TODAY’S HARD DISKS
Processors haveincreased in speed by orders of magnitude over the years.
But spinning hard disk drives (HDD) havenot.
Performancegap between how fastprocessors demand data and how quickly
HDD responds.
HDD speed lags behind processors becauseitis constrained by physical
components.
Hybrid Hard Drives arean incremental upgradeto the Hard Disk Drives.
Hybrid hard disk drive contains large-buffer.
Itintegrated with a cache using non-volatile Flash memory.
Flash memory buffer can speed up repeated reads from the same location.
Compared to normalHDD speed of data access and consequent faster
computer boot process, decreased power consumption, and improved
reliability.

7. ARCHITECTURE OF SSD
MEMORY
SSDs mainly depend on flash memory chips to store data. The name "flash"
was suggested becausethe process of erasing the memory contents reminded
him of the flash of a camera. Flash memory chips storedata in a large array of
floating gate metal–oxide–semiconductor (MOS) transistors. Silicon wafers are
manufactured with microscopic transistor dimension, now approaching 40
nanometers. In this flash memory thin insulating glass layers are necessary for
proper operation of the memory cells. These layers are subjected to stressful
temperatures and voltages, and their insulating properties deteriorate over
time. Quite simply, flash memory can wear out.

8. A floating gate memory cell is a type of metal-oxide-semiconductor field-effect
transistor (MOSFET). Silicon forms the baselayer, or substrate, of the transistor
array. Areas of the silicon are masked off and infused with different types of
impurities in a process called doping. Impurities arecarefully added to adjust
the electrical properties of the silicon.
Some impurities, for example phosphorous, createan excess of electrons in
the silicon lattice. Other impurities, for example boron, create an absence of
electrons in the lattice. The impurity levels and the proximity of the doped
regions are set out in a lithographic manufacturing process. In addition to
doped silicon regions, layers of insulating silicon dioxide glass (SiO2) and
conducting layers of polycrystallinesilicon and aluminum are deposited to
complete the MOSFETstructure.
MOS transistors work by forming an electrically conductivechannel between
the sourceand drain terminals. When a voltage is applied to the controlgate,
an electric field causes a thin negatively charged channel to format the
boundary of the SiO2 and between the sourceand drain regions. When the N-
channel is present, electricity is easily conducted fromthe sourceto the drain
terminals. When the control voltage is removed, the N-channel disappears and
no conduction takes place. The MOSFEToperates like a switch, either in the on
or off state.

9. In addition to the control gate, there is a secondary floating gate which is not
electrically connected to the rest of the transistor. Thevoltage at the control
gate required for N-channel formation can be changed by modifying the charge
stored on the floating gate. Even though there is no electrical connection to
the floating gate, electric chargecan be put in to and taken off of the floating
gate.
A quantum physicalprocess called Fowler-Nordheimtunneling coaxes
electrons through the insulation between the floating gate and the P-well.
When electric chargeis removed from the floating gate, the cell is considered
in an erased state.
When electric chargeis added to the floating gate, the cell is considered in the
programmed state. A chargethat has been added to the floating gate will
remain for a long period of time. Itis this process of adding, removing and
storing electric chargeon the floating gate that turns the MOSFETinto a
memory cell.
Erasing the contents of a memory cell is done by placing a high voltage on the
silicon substratewhile holding the control gate at zero. The electrons stored in
the floating gate tunnel through the oxide barrier into the positive substrate.
Thousands of memory cells are etched onto a common section of the
substrate, forming a single block of memory. All of the memory cells in the
block are simultaneously erased when the substrateis “flashed” to a positive
voltage. An erased memory cell will allow N-channelformation at a low control
gate voltage becauseall of the charge in the floating gate has been removed.
This is referred to as logic level “1” in a single-level cell (SLC) flash memory cell.

10. The cell is programmed by placing a high voltage on the control gate while
holding the sourceand drain regions at zero. The high electric field causes the
N-channel to formand allows electrons to tunnel through the oxide barrier
into the floating gate. Programming the memory cells is performed one word
at a time and usually an entire page is programmed in a single operation. A
programmed memory cell inhibits the control gate fromforming an N-channel
at normal voltages because of the negative chargestored on the floating gate.
To formthe N-channel in the substrate, the controlgate voltage mustbe raised
to a higher level. This is referred to as logic level “0” in an SLC flash memory
cell.
CONTROLLER
Controller is an embedded processor that executes firmware-level software.
SSD controller bridge the Flash memory components to the SSD input/output
interfaces.

11. System will communicates the controller to read data from or write data to the
flash memory
COMPARISON OF SSD & HDD
Solid-state drive Hard disk drive
Random access time
0.1 ms
Random access time
5~10 ms
Read latency time
Very low
Read latency time
high
100MB/s to 500MB/s 50MB/s to 100MB/s.
High Reliability
SSDs haveno moving parts to fail mechanically.
Low Reliability
HDDs havemoving parts and are subjectto sudd
failure;
small and light in weight. relatively large and heavy
In 2013 SSDs wereavailablein sizes up to 512GB, In 2013 HDDs of up to 4TB were available.
power consuption 2 watts 12 watts.
As of 2013 NAND flash SSDs costabout Rs.31000for
500GB
As of 2013 HDDs costaboutRs.3200 for 500GB
drives

12. ADVANTAGES
High performance– significantly faster than a standard HDD
Faster seek time – up to 60x faster than HDD
Lower power – Lesser power consumption ,cooler operation
Silent operation – ideal for post production environments
Lighter weight – perfect for portable devices.
Ability to endureextreme shock, high altitude, vibration and extremes of
temperature.
Immuneto magnets.
SSDs arerandomaccess by natureand can performparallel reads on multiple
sections of the drive
DISADVANTAGES
They are more expensivethan traditional hard drives.
They currently offer less storagespace than traditional hard drives.
Slower Write Speed on low-end Models(MLC based types).

13. APPLICATIONS
Servers
Desktop computers
Laptops
Ultrabooks
HD Camcorders
SmartTv
CCTV Digital Video Recorder (DVR)
Set-Top Boxes
Gaming Consoles
CONCLUSION
Faster Data Access
Less Power Usage
Higher Reliability
Latest high-end laptops and ultrabooks now comes with SSD
In comming years SSD Will Replace Hard Disk Drives

14. REFERNECE
J. Katcher. PostMark: “A New Solid State Drives”. TechnicalReport TR3022,
Network Appliance, October 1997.
“Evolution of the Solid-State Drive” By Benj Edwards, PCWorld
A. Birrell, M. Isard, C. Thacker, and T. Wobber. “A Design for High-Performance
Flash Disks”, December 2007.
S. Nath and A. Kansal. FlashDB: “Dynamic Self-Tuning Database for NAND
Flash”. In IPSN’07: Proceedings of the 6th InternationalConference on
Information Processing in Sensor Networks June, 2009.
http://en.wikipedia.org/wiki/Solid-state_drive
http://www.intel.com/pressroom/.html
http://whatisasolidstatedrive.com/?p=14