Which one of the following statements is true? Only one is true . Explain why T/F for each. (a) In metals, dislocations provide easy pathways for conducting electrons. (b) When a hole is created by thermal excitation of an electron across the band gap (1.1 eV) in silicon (atomic number 14), it has the same charge as a hole created by thermal excitation of an electron across the band gap (0.67 eV) in germanium (atomic number 32). (c) When a reverse-bias potential is applied across a p-n junction in doped Si, the flow of charge carrier across the junction will be insignificantly small. (d) In any given intrinsic semiconductor, the mobility of holes in the conduction band is lower than the mobility of electrons in the conduction band. (e) The addition of Ge to Si produces an extrinsic semiconductor. Solution (d) is correct . qE= E-Eg (in eV) so, lesser Eg gives more charge. (e) is false because Ge (+4 valency) will retain nature of doping in Si. (c) it would be significantly small i.e.,much lesser. .