UNIT-V.pptx

UNIT V -MEMORY AND PROGRAMMABLE LOGIC
• RAM
• Memory Decoding
• Error Detection and Correction
• ROM
• Programmable Logic Array
• Programmable Array Logic
• Sequential Programmable Devices.

Error detecting and correcting codes
• When the digital information in the binary form is transmitted from one circuit or system to
another circuit or system an error may occur.
• This means the signal corresponding to 0 may change to 1 or vice-versa due to presence of
noise.
• To maintain data integrity between transmitter and receiver, extra bit or more than one bit are
added in the data.
• These extra bits allow the detection and sometimes the correction of error in the data.
• The data along with the extra bit /bits form the code.
• Codes which allow only error detection are called error detecting codes and codes which
allow error detection and correction are called error detecting and correcting codes.

Parity bit
• A parity bit is used for the purpose of detecting errors during transmission of binary information.
• A parity bit is an extra bit included with a binary message to make the number of 1s either odd or
even.
• The message including the parity bit is transmitted and then checked at the receiving end for errors.
• An error is detected if the checked parity does not correspond with the one transmitted.
• The circuit that generates the parity bit in the transmitter is called a parity generator and the circuit
that checks the parity in the receiver is called a parity checker.
• In even parity the added parity bit will make the total number of 1s an even amount. In odd parity
the added parity bit will make the total number of 1s an odd amount.

3-bit message Message with odd
parity
Message with
even parity
A B C Message Parity Message Parity
0 0 0 000 1 000 0
0 0 1 001 0 001 1
0 1 0 010 0 010 1
0 1 1 011 1 011 0
1 0 0 100 0 100 1
1 0 1 101 1 101 0
1 1 0 110 1 110 0
1 1 1 111 0 111 1
Message with even parity and odd parity

Hamming code
• Hamming code not only provides the detection of a bit error, but also identifies which bit is in
error so that it can be corrected.
• Thus hamming code is called error detecting and correcting code.
• The code uses a number of parity bits(dependent on the number of information bits) located
at certain position in a group.
Number of parity bits:
• The number of parity bits depends on the number of information bits
• If the number of bits is designated as x, then the number of parity bits P is determined using
the relation
• 2𝑝
≥ 𝑥 + 𝑃 + 1

Location of the parity bits in a code:
• The parity bits are located in the positions that are numbered corresponding to ascending powers of
two(1,2,4,8,….).
• Therefore, for 7-bit code, locations for parity bits and information bits are as follows: D4, D3,D2,P3, D1,P2,P1
Assigning values to parity bit
• In hamming code , each parity bit provides a check on certain other bits in the total code, therefore we must
know the value of these others in order to assign the parity bit value.
 Assignment of P1:
• This parity bit checks all bit locations, including itself, that have 1s in the same location in the binary location
numbers.
• This parity bit checks all bit locations, including itself, that have 1s in the middle bit.
• This parity bit checks all bit locations, including itself, that have 1s in the left-most bit.
Bit designation 𝑫𝟕 𝑫𝟔 𝑫𝟓 𝑷𝟒 𝑫𝟑 𝑷𝟐 𝑷𝟏
Bit location 7 6 5 4 3 2 1
Binary location number 111 110 101 100 011 010 001
Information bits (𝑫𝒏)
Parity bits (𝑷𝒏)

1. Encode the binary word 1011 into seven bit even parity Hamming code.
Solution:
Step 1: Find the number of parity bits required. Let P=3, then
2𝑝
= 23
= 8
x+P+1=4+3+1=8
Three parity bits are sufficient.
Total code bits=4+3=7
Step 2: Construct a bit location table
Hamming code=1010101
Bit designation 𝑫𝟕 𝑫𝟔 𝑫𝟓 𝑷𝟒 𝑫𝟑 𝑷𝟐 𝑷𝟏
Bit location 7 6 5 4 3 2 1
Binary location number 111 110 101 100 011 010 001
Information bits (𝑫𝒏) 1 0 1 1
Parity bits (𝑷𝒏) 0 0 1

Bit designation 𝑫𝟗 𝑷𝟖 𝑫𝟕 𝑫𝟔 𝑫𝟓 𝑷𝟒 𝑫𝟑 𝑷𝟐 𝑷𝟏
Bit location 9 8 7 6 5 4 3 2 1
Binary location
number
1001 1000 0111 0110 0101 0100 0011 0010 0001
Information bits (𝑫𝒏) 1 0 1 1 1
Parity bits (𝑷𝒏) 0 1 1 0
Hamming code 1 0 0 1 1 1 1 1 0
Determine the single error-correcting code for the information code 10111 for odd parity
The Hamming code 101101101 is received. Correct it if any errors. There are four parity bits and odd parity is used.
Bit designation 𝑫𝟗 𝑷𝟖 𝑫𝟕 𝑫𝟔 𝑫𝟓 𝑷𝟒 𝑫𝟑 𝑷𝟐 𝑷𝟏
Bit location 9 8 7 6 5 4 3 2 1
Binary location
number
1001 1000 0111 0110 0101 0100 0011 0010 0001
Received code 1 0 1 1 0 1 1 0 1

Detect and correct error (if any) in the following received even parity hamming code word 00111101010. Also find out
the correct message.
Bit designation 𝑫𝟏𝟏 𝑫𝟏𝟎 𝑫𝟗 𝑷𝟖 𝑫𝟕 𝑫𝟔 𝑫𝟓 𝑷𝟒 𝑫𝟑 𝑷𝟐 𝑷𝟏
Bit location 11 10 9 8 7 6 5 4 3 2 1
Binary location
number
1011 1010 1001 1000 0111 0110 0101 0100 0011 0010 0001
Received code 0 0 1 1 1 1 0 1 0 1 0
Single Error Correction Plus Double Error Detection:
• A hamming code as explained above provides for the detection and correction of only a single
error. With the slight modification, it is possible to construct hamming code for single error
correction and double error detection.
• A one more parity bit is added in the hamming code to ensure hamming code (including all parity
bits) contains an even number of 1’s. The added parity bit is not used in determining the values of
the other parity bits. The resulting hamming code enables single error correction and double error
detection.

Given the 8-bit data word 01011011, generate the 13-bit composite word for the hamming code that corrects single
errors and detects double errors.
Bit designation 𝑷𝟏𝟑 𝑫𝟏𝟐 𝑫𝟏𝟏 𝑫𝟏𝟎 𝑫𝟗 𝑷𝟖 𝑫𝟕 𝑫𝟔 𝑫𝟓 𝑷𝟒 𝑫𝟑 𝑷𝟐 𝑷𝟏
Bit location 13 12 11 10 9 8 7 6 5 4 3 2 1
Binary location
number
1101 1100 1011 1010 1001 1000 0111 0110 0101 0100 0011 0010 0001
Information bits 0 1 0 1 1 0 1 1
Parity bits

Read Only Memory (ROM)
• We can't write data in read only memories.
• It is non-volatile memory i.e., it can hold data even if power is turned off.
• Generally, ROM is used to store the binary codes for the sequence of
instructions you want the computer to carry out and data such as look up
tables. This is because this type of information does not change.
• It is important to note that although we give the name RAM to static and
dynamic read/write memory devices, that does not mean that the ROMs that
we are using are also not random access devices. In fact, most ROMs are
accessed randomly with unique addresses.
• It consists of a transistor T and switch P. The transistor T is driven by the
word line. The contents of cell can be read from the cell when word line is
logic 1.
• A logic value 0 is read if the transistor is connected to ground through switch
P. If switch P is open, a logic value 1 is read. The bit line is connected
through a resistor to the power supply.
• A sense circuit at the end of the bit line generates the proper output value.
Data is stored into a ROM when it is manufactured.
• There are four types of ROM : Masked ROM, PROM, EPROM and
EEPROM or E2PROM.

PROM (Programmable Read Only Memory)
• PROMs are programmed by user.
• To provide the programming facility, each Address select line and data line intersection has its own
fused MOSFET or transistor.
• When the fuse is intact, the memory cell is configured as a logic 1 and when fuse is blown (open
circuit), the memory cell is logical 0.
• Logical 0s are programmed by selecting the appropriate select line and then driving the vertical
data line with a pulse of high current .

• It has diodes in every bit position; therefore, the
output is initially all 0s.
• Each diode, however has a fusible link in series
with it.
• By addressing bit and applying proper current
pulse at the corresponding output, we can blow
out the fuse, storing logic 1 at that bit position.
• The fuse uses material like nichrome and
polycrystalline.
• For blowing the fuse it is necessary to pass
around 20 to 50 mA of current for period 5 to 20
μs.
• The blowing of fuses according to the truth table
is called programming of ROM.
• The user can program PROMs with special
PROM programmer.
• The PROM programmer selectively burns the
fuses according to the bit pattern to be stored.
• This process is also known as burning of PROM.
• The PROMs are one time programmable.
• Once programmed, the information stored is
permanent.

EPROM (Erasable Programmable Read Only Memory)
• Erasable programmable ROMs use MOS circuitry.
• They store 1's and 0's as a packet of charge in a buried layer of the IC chip.
• EPROMs can be programmed by the user with a special EPROM programmer.
• The important point is that we can erase the stored data in the EPROMs by exposing the chip to ultraviolet
light through its quartz window for 15 to 20 minutes.
• It is not possible to erase selective information, when erased the entire information is lost.
• The chip can be reprogrammed.
• This memory is ideally suitable for product development, experimental projects and college laboratories, since
this chip can be reused many times, over.

EPROM programming :
• When erased each cell in the EPROM contains 1. Data is introduced by selectively programming 0's into the
desired bit locations. Although only 0's will be programmed, both 1's and 0's can be presented in the data.
• During programming address and data are applied to address and data pins of the EPROM.
• When the address and data are stable, program pulse is applied to the program input of the EPROM.
• The program pulse duration is around 50ms and its amplitude depends on EPROM IC.
• It is typically 5.5 V to 25 V.
• In EPROM, it is possible to program any location at any time - either individually, sequentially, or at random.
EEPROM (Electrically Erasable Programmable Read Only Memory):
• Electrically erasable programmable ROMs also use MOS circuitry very similar to that of EPROM.
• Data is stored as charge or no charge on an insulated layer or an insulated floating gate in the device.
• The insulating layer is made very thin (< 200 Å). Therefore, a voltage as low as 20 to 25 V can be used to move
charges across the thin barrier in either direction for programming or erasing.
• EEPROM allows selective erasing at the register level rather than erasing all the information since the
information can be changed by using electrical signals. The EEPROM memory also has a special chip erase
mode by which entire chip can be erased in 10 ms.
• This time is quite small as compared to time required to erase EPROM and it can be erased and reprogrammed
with device right in the circuit. However, EEPROMs are most expensive and the least dense ROMs.

Internal Logic of ROM
• It consists of n-input lines and m-output lines.
• Each bit combination of the input variables is called an address.
• Each bit combination that comes out of the output lines is called a word.
• The number of bits per word is equal to the number of output lines, m.
• The address specified in binary number denotes one of the minterms of n variables.
• The number of distinct addresses possible with n-input variables is 2n .
• An output word can be selected by a unique address and since there are 2n distinct addresses in ROM,
there are 2n distinct words in the ROM.
• The word available on the output lines at any given time depends on the address value applied to the
input lines.

• Let us consider 64 x 4 ROM.
• The ROM consists of 64 words of 4-bits each.
• This means that there are four output lines and
particular word from 64 words presently
available on the output lines is determined
from the six input lines.
• There are only six inputs in a 64 x 4 ROM
because 26 = 64 and with six variables, we can
specify 64 addresses or minterms.
• For each address input, there is a unique
selected word.
• Thus, if the input address is 000000, word
number 0 is selected and applied to output
lines.
• If the input address is 111111, word number 63
is selected and applied to output lines.

• The six input variables are decoded in 64 lines by means of 64 AND gates and 6 inverters.
• Each output of the decoder represents one of the minterms of a function of six variables.
• The 64 outputs of the decoder are connected through fuses to each OR gate.
• Only four of these fuse are shown in the diagram, but actually each OR gate has 64 inputs and each
input goes through a fuse that can be blown as desired.

• The ROM is a two level implementation in sum of minterms form.
• Let us see AND-OR and AND-OR-INVERTER implementation of ROM.

AND Matrix
• The AND matrix is used to form product terms.

OR Matrix
• The OR matrix is provided to produce the logical sum of the product term outputs of the AND matrix.
• Before programming, all fuse link in OR matrix are also intact and the sum term for each OR gate is given
by,
S= P0 + P1 + .... + Pm-2+Pm-1

Invert/ Non-invert Matrix
• Invert/Non-invert matrix provides output in the complement or uncomplemented form.
• The user can program the output in either complement or uncomplemented form as per design
requirements.
• In both the cases if fuse is intact the output is in its uncomplemented form; otherwise output is in the
complemented form.
Combinational Logic Implementation using ROM
• Looking at the logic diagram of the ROM, we can realize that each output provides the sum of all the
minterms of n-input variables.
• We know that any Boolean function can be expressed in sum of minterms form.
• By breaking the links of those minterms not included in the function, each ROM output can be made
to represent the Boolean function of one of the output variables in the combinational circuit.
• For an n-input, m-output combinational circuit, we need a 2" x m ROM.

1. Using ROM realize the following expressions.
𝑭𝟏 𝒂, 𝒃, 𝒄 = 𝜮𝒎(𝟎, 𝟏, 𝟑, 𝟓, 𝟕)
𝑭𝟐 𝒂, 𝒃, 𝒄 = 𝜮𝒎(𝟏, 𝟐, 𝟓, 𝟔)
𝑨𝟐 𝑨𝟏 𝑨𝟎 𝑭𝟏 𝑭𝟐
0 0 0 1 0
0 0 1 1 1
0 1 0 0 1
0 1 1 1 0
1 0 0 0 0
1 0 1 1 1
1 1 0 0 1
1 1 1 1 0
ROM Truth Table
Block Diagram

2. Design a combinational using a ROM. The circuit accepts 3-bit binary number and generates
its equivalent Excess-3 code.
Inputs Outputs
𝑩𝟐 𝑩𝟏 𝑩𝟎 𝑬𝟑 𝑬𝟐 𝑬𝟏 𝑬𝟎
0 0 0 0 0 1 1
0 0 1 0 1 0 0
0 1 0 0 1 0 1
0 1 1 0 1 1 0
1 0 0 0 1 1 1
1 0 1 1 0 0 0
1 1 0 1 0 0 1
1 1 1 1 0 1 0

1. Design a combinational circuit using ROM that accepts a three bit binary number and output is a binary
number equal to the square of the input number.
Input Output
A B C F5 F4 F3 F2 F1 F0
0 0 0 0 0 0 0 0 0
0 0 1 0 0 0 0 0 1
0 1 0 0 0 0 1 0 0
0 1 1 0 0 1 0 0 1
1 0 0 0 1 0 0 0 0
1 0 1 0 1 1 0 0 1
1 1 0 1 0 0 1 0 0
1 1 1 1 1 0 0 0 1

2. Design a switching circuit that converts a 4-bit binary code into a 4-bit gray code using ROM array.
Input Output
B3 B2 B1 B0 G3 G2 G1 G0
0 0 0 0 0 0 0 0
0 0 0 1 0 0 0 1
0 0 1 0 0 0 1 1
0 0 1 1 0 0 1 0
0 1 0 0 0 1 1 0
0 1 0 1 0 1 1 1
0 1 1 0 0 1 0 1
0 1 1 1 0 1 0 0
1 0 0 0 1 1 0 0
1 0 0 1 1 1 0 1
1 0 1 0 1 1 1 1
1 0 1 1 1 1 1 0
1 1 0 0 1 0 1 0
1 1 0 1 1 0 1 1
1 1 1 0 1 0 0 1
1 1 1 1 1 0 0 0

Programmable Logic Array(PLA)
• ROM,PLA and PAL (Programmable Array Logic) are the various forms of Programmable Logic
Devices(PLDs).
• PLDs can be easily configurable by the individual user for specific application.
• The combinational circuit do not use all the minterms every time.
• Occasionally, they have don't care conditions.
• Don't care condition when implemented with a ROM becomes an address input that will never occur.
• The result is that not all the bit patterns available in the ROM are used, which may be considered a waste
of available equipment.
• For cases where the number of don't care conditions is excessive, it is more economical to use a second
type of LSI component called a Programmable Logic Array (PLA).
• A PLA is similar to a ROM in concept; however it does not provide full decoding of the variables and
does not generates all the minterms as in the ROM.
• The PLA replaces decoder by group of AND gates, each of which can be programmed to generate a
product term of the input variables.
• In PLA, both AND and OR gates have fuses at the inputs, therefore in PLA both AND and OR gates are
programmable.

• It consists of n-inputs, output buffer with m outputs, m product terms, m sum terms, input and output
buffers.
• The product terms constitute a group of m AND gates and the sum terms constitute a group of m OR
gates, called OR matrix.
• Fuses are inserted between all n-inputs and their complement values to each of the AND gates.
• Fuses are also provided between the outputs of the AND gates and the inputs of the OR gates.
• The third set of fuses in the output inverters allows the output function to be generated either in the
AND-OR form or in the AND-OR-INVERT form.
• When inverter is bypassed by link we get AND-OR implementation.
• To get AND-OR-INVERTER implementation inverter link has to be disconnected.

Input Buffer
• Input buffers are provided in the PLA to limit loading of the
sources that drive the inputs.
• They also provide inverted and non-inverted form of inputs at
its output.
Output Buffer
• The driving capacity of PLA is increased by providing
buffers at the output.
• They are usually TTL compatible.
• The output buffer may provide totem-pole, open collector or
tri-state output.

Implementation of Combination Logic Circuit using
PLA
• Like ROM, PLA can be mask-programmable or field-
programmable.
• With a mask-programmable PLA, the user must
submit a PLA program table to the manufacturer.
• This table is used by the vendor to produce a user-
made PLA that has the required internal paths
between inputs and outputs.
• A second type of PLA available is called a Field-
Programmable Logic Array or FPLA.
• The FPLA can be programmed by the user by means
of certain recommended procedures.
• FPLAs can be programmed with commercially
available programmer units.
Example: Draw a PLA circuit to implement the logic
functions 𝑨𝑩𝑪 + 𝑨𝑩𝑪 + 𝑨𝑪 and 𝑨𝑩𝑪 + 𝑩𝑪.
Solution:
𝐴𝐵𝐶 + 𝐴𝐵𝐶 + 𝐴𝐶= 𝐴𝐵𝐶 + 𝐴(𝐵𝐶 + 𝐶)
= 𝐴𝐵𝐶 + 𝐴(𝐵 + 𝐶)
= 𝐴𝐵𝐶 + 𝐴𝐵 + 𝐴𝐶)

2. Implement the following two Boolean
functions with a PLA.
𝐹1 𝐴, 𝐵, 𝐶 = Σ(0,1,2,4)
𝐹2 𝐴, 𝐵, 𝐶 = Σ(0,5,6,7)
Solution:
Step 1: Simplify the Boolean function
𝐹1 = 𝐵𝐶 + 𝐴𝐵 + 𝐴𝐶
𝐹2 = 𝐴𝐵𝐶 + 𝐴𝐶 + 𝐴𝐵
Step 2: Implementation

• A combinational logic circuit is defined by the following function f1(a,b,c)=∑(3,5,6,7) f2(a,b,c)=∑(0,2,4,7).
Implement the circuit with a PLA having three inputs, four product terms and two outputs.
Solution:

Design a BCD to excess-3 code converter and implement using suitable PLA.
Solution: BCD Code Outputs
𝑩𝟑 𝑩𝟐 𝑩𝟏 𝑩𝟎 𝑬𝟑 𝑬𝟐 𝑬𝟏 𝑬𝟎
0 0 0 0 0 0 1 1
0 0 0 1 0 1 0 0
0 0 1 0 0 1 0 1
0 0 1 1 0 1 1 0
0 1 0 0 0 1 1 1
0 1 0 1 1 0 0 0
0 1 1 0 1 0 0 1
0 1 1 1 1 0 1 0
1 0 0 0 1 0 1 1
1 0 0 1 1 1 0 0
𝐸3 = 𝐵3 + 𝐵2𝐵0 + 𝐵2𝐵1
𝐸2 = 𝐵2𝐵1 𝐵0 + 𝐵2𝐵0 + 𝐵2𝐵1
𝐸1 = 𝐵1 𝐵0 + 𝐵1𝐵0
𝐸0 = 𝐵1 𝐵0 + 𝐵1𝐵0
Product
Terms
BCD Code Outputs
𝑩𝟑 𝑩𝟐 𝑩𝟏 𝑩𝟎 𝑬𝟑 𝑬𝟐 𝑬𝟏 𝑬𝟎
1 (𝐵3) 1 - - - 1 - - -
2 (𝐵2𝐵0) - 1 - 1 1 - - -
3 (𝐵2𝐵1) - 1 1 - 1 - - -
4 (𝐵2𝐵1 𝐵0) - 1 0 0 - 1 - -
5 (𝐵2𝐵0) - 0 - 1 - 1 - -
6 (𝐵2𝐵1) - 0 1 - - 1 - -
7 (𝐵1 𝐵0) - - 0 0 - - 1 1
8 (𝐵1𝐵0) - - 1 1 - - 1 -
9 (𝐵1𝐵0) - - 1 0 - - - 1
PLA Program Table

PAL(PROGRAMMABLE ARRAY LOGIC):
• It is a programmable logic device with a fixed
OR array and a programmable AND array.
• Since only AND gates are programmable, the
PAL is easier to program but it is not flexible as
PLA.
• It has four inputs and four outputs.
• Each input has buffer and an inverter gate.

Implement the following Boolean
functions using PAL.
w(A,B,C,D)=Σm(0,2,6,7,8,9,12,13)
x(A,B,C,D)=Σm(0,2,6,7,8,9,12,13,14)
y(A,B,C,D)=Σm(2,3,8,9,10,12,13)
z(A,B,C,D)=Σm(1,3,4,6,9,12,14)
Solution:
Step 1: Simplify the function using
K-map:
𝑤 = 𝐴𝐵𝐷 + 𝐴𝐵𝐶 + 𝐴𝐶
𝑥 = 𝐴𝐵𝐷 + 𝐴𝐵𝐶 + 𝐴𝐶 + 𝐵𝐶𝐷
𝑦 = 𝐴𝐵𝐶 + 𝐵𝐶𝐷 + 𝐴𝐶
𝑧 = 𝐴𝐵𝐷 + 𝐵𝐶𝐷 + 𝐵𝐷
𝑥 = 𝑤 + 𝐵𝐶𝐷
Product
term
AND inputs
Outputs
A B C D w
1 0 0 - 0 -
𝒘 = 𝑨𝑩𝑫 + 𝑨𝑩𝑪 + 𝑨𝑪
2 0 1 1 - -
3 1 - 0 - -
4 - - - - 1
𝒙 = 𝒘 + 𝑩𝑪𝑫
5 - 1 1 0 -
6 - - - - -
7 0 0 1 - -
𝒚 = 𝑨𝑩𝑪 + 𝑩𝑪𝑫 + 𝑨𝑪
8 - 0 1 0 -
9 1 - 0 - -
10 0 0 - 1 -
𝒛 = 𝑨𝑩𝑫 + 𝑩𝑪𝑫 + 𝑩𝑫
11 - 0 0 1 -
12 - 1 - 0 -
Step 2: Implementation-PAL Program table

Generate the following Boolean functions with a PAL
with 4 inputs and 4 outputs.
𝑌3 = 𝐴𝐵𝐶𝐷 + 𝐴𝐵𝐶𝐷 + 𝐴𝐵𝐶𝐷= 𝐵𝐶𝐷 + 𝐴𝐵𝐶𝐷
𝑌2 = 𝐴𝐵𝐶𝐷 + 𝐴𝐵𝐶𝐷 + 𝐴𝐵𝐶𝐷= 𝐴𝐵𝐶 + 𝐵𝐶𝐷
𝑌1 = 𝐴𝐵𝐶 + 𝐴𝐵𝐶 + 𝐴𝐵𝐶 + 𝐴𝐵𝐶= 𝐴𝐵 + 𝐴𝐵𝐶 + 𝐵𝐶
𝑌0 = 𝐴𝐵𝐶𝐷

• Implement the following function using PAL F1(A,B,C)=∑(1,2,4,6); F2(A,B,C)=∑(0,1,6,7);
F3(A,B,C)=∑(1,2,3,5,7)
• A combinational logic circuit is defined by the following function f1(a,b,c)=∑(0,1,6,7) f2(a,b,c)=∑(2,3,5,7).
Implement the circuit with a PAL having three inputs, three product terms and two outputs.
ROM/PROM PAL PLA
AND array is fixed and OR array is
programmable.
Both AND Programmable and OR
array is fixed.
OR and AND array is programmable.
All minterms are decoded.
Only desired minterms are
programmed using AND array.
Only desired minterms are programmed using
AND array.
Cheaper and Simpler Cheaper and Simpler Costliest and complex than PAL and PROMs
Only Boolean functions in standard SOP
form can be implemented using PROM.
Any Boolean functions in SOP
form can be implemented using
PAL.
Any Boolean functions in SOP form can be
implemented using PLA.

Sequential Programmable Devices
• Sequential programmable devices include both gates and flip-flops.
• Thus these devices can be used to implement sequential circuits.
• The three major types are:
 Sequential (or simple) programmable logic device (SPLD)
 Complex programmable logic device (CPLD)
 Field‐programmable gate array (FPGA)

Sequential (or simple) programmable logic device (SPLD)
• The SPLD includes flip‐flops, in addition to the AND–OR array, within the integrated circuit chip
• The output is driven by an edge‐triggered D flip‐flop connected to a common clock input and changes state
on a clock edge.
• The output of the flip‐flop is connected to a three‐state buffer (or inverter) controlled by an output‐enable
signal.
• The output of the flip‐flop is fed back into one of the inputs of the programmable AND gates to provide the
present‐state condition for the sequential circuit.

Complex programmable logic device (CPLD)
• It is merely a collection of multiple PLDs and an interconnection structure, all on the same chip.
• In addition to individual PLDs, the on-chip interconnection structure is also programmable.

 It consists of collection of PAL like blocks, I/O blocks and a set of interconnection wires, called
programmable interconnection structure.
 The PAL like blocks are connected to the programmable interconnect structure and to the I/O blocks and it
usually consists of 16 macrocells.
 The macrocells in CPLD consists of AND-OR configuration, an EX-OR gate, a flip-flop, a multiplexer and
a tri-state buffer.
 The EX-OR gate provides the output of OR-gate in inverted or non-inverted form as per the fuse link
status.
 A D flip flop stores the output of EX-OR gate.
 Multiplexer selects either the output of the D flip flop or the output of the EX-OR gate depending on the
select input.
 The tri-state buffer acts as a switch which enables or disables the output.

Field‐programmable gate array (FPGA)
 The word field refers to the ability of the gate arrays to be programmed for the specific function by the user instead
of by the manufacturer of the device.
 The word array is used to indicate the series of columns and rows of gates that can be programmed by the end user.
 The programmable logic blocks of FPGAs are called logic blocks or configurable logic blocks(CLBs).
 The basic structure of FPGA consists of an array of logic blocks with programmable row and column
interconnecting channels surrounded by programmable I/O blocks.

• Look-up table (LUT) is used as a memory device that can be programmed to perform logic functions.
• Each logic block in a generic FPGA contains several logic elements.
• The logic element consists of LUT, associated logic and a flip-flop.

• A memory is just like a human brain. It is used to store data
and instruction. Computer memory is the storage space in
computer where data is to be processed and instructions
required for processing are stored.
• The memory is divided into large number of small parts.
Each part is called a cell. Each location or cell has a unique
address which varies from zero to memory size minus one.
• For example if computer has 64k words, then this memory
unit has 64 * 1024 = 65536 memory location. The address of
these locations varies from 0 to 65535.
• Memory is primarily of two types
 Internal Memory − cache memory and primary/main
memory
 External Memory − magnetic disk / optical disk etc.

• RAM
• A RAM constitutes the internal memory of the CPU for storing data, program and program result. It is read/write
memory. It is called random access memory (RAM).
• Since access time in RAM is independent of the address to the word that is, each storage location inside the
memory is as easy to reach as other location & takes the same amount of time. We can reach into the memory at
random & extremely fast but can also be quite expensive.
• RAM is volatile, i.e. data stored in it is lost when we switch off the computer or if there is a power failure. Hence,
a backup uninterruptible power system (UPS) is often used with computers. RAM is small, both in terms of its
physical size and in the amount of data it can hold.
• RAM is of two types
 Static RAM (SRAM)
 Dynamic RAM (DRAM)

• Static RAM (SRAM)
• The word static indicates that the memory retains its contents as long as power remains applied. However, data is
lost when the power gets down due to volatile nature. SRAM chips use a matrix of 6-transistors and no capacitors.
Transistors do not require power to prevent leakage, so SRAM need not have to be refreshed on a regular basis.
• Because of the extra space in the matrix, SRAM uses more chips than DRAM for the same amount of storage
space, thus making the manufacturing costs higher.
• Static RAM is used as cache memory needs to be very fast and small.
• Dynamic RAM (DRAM)
• DRAM, unlike SRAM, must be continually refreshed in order for it to maintain the data. This is done by placing
the memory on a refresh circuit that rewrites the data several hundred times per second. DRAM is used for most
system memory because it is cheap and small. All DRAMs are made up of memory cells. These cells are composed
of one capacitor and one transistor.

MEMORY DECODING
• In addition to requiring storage components in a memory unit, there is a need for
decoding circuits to select the memory word specified by the input address.

• When the memory enable is 0, all outputs of the decoder are 0 and none
of the memory words are selected. With the memory select at 1, one of
the four words is selected, dictated by the value in the two address lines.
• Once a word has been selected, the read/write input determines the
operation. During the read operation the four bits of the selected word go
through OR gates to the output terminals.
• During the write operation, the data available in the input lines arc
transferred into the four binary cells of the selected word. The binary
cells that are not selected are disabled and their previous binary values
remain unchanged.
• When the memory select input that goes into the decoder is equal to 0
none of the words are selected and the contents of all cells remain
unchanged regardless of the value of the read/write input.

• Coincident Decoding
• A decoder with k inputs and 2𝑘 outputs requires 2𝑘 AND gates with k inputs per gate.
The total number of gates and the number of inputs per gate can be reduced by
employing two decoders in a two - dimensional selection scheme.

• Here two 2/k input decoders are used instead of one k-input decoder.
• One decoder performs the row selection and the other the column selection in a
two-dimensional matrix configuration.
• For example, instead of using a single 10 x 1,024 decoder, we use two 5 x 32
decoders.
• With the single decoder, we would need 1,024 AND gates with 10 inputs in each.
• The five most significant bits of the address go to input X and the five least
significant bits go to input Y.
• Each word within the memory array is selected by the coincidence of one X line
and one Y line.
• Thus each word in memory is selected by the coincidence between 1 of 32 rows
and 1 of 32 columns, for a total of 1,024 words.

Address Multiplexing
• Because of large capacity, the address decoding of DRAM is arranged in a two dimensional
array and larger memories often have multiple arrays.
• To reduce the number of pins in the IC package, designers utilize address multiplexing
whereby one set of address input pins accommodates the address components.
• In a two-dimensional array, the address is applied in two parts at different times, with the row
address first and the column address second.
• Since the same set of pins is used for both parts of the address, the size of the package is
decreased significantly.

• The memory consists of a two-dimensional array of cells arranged into 256 rows by
256 columns, for a total of 28 x 28 = 216 = 64K words.
• There is a single data input line; a single data output line, and a read/write control as
well as an eight-bit address input and two address strobes, the latter included for-
enabling the row and column address into their respective registers.
• The row address strobe (RAS) enables the eight-bit row register and the column
address strobe (CAS) enables the eight-bit column register.
• The bar on top of the name of the strobe symbol indicates that the registers are
enabled on the zero level of the signal.

UNIT-V.pptx

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