This document provides specifications for three high-voltage switching transistors: 2SA1812, 2SA1727, and 2SA1776. It includes: 1) Absolute maximum ratings and electrical characteristics like breakdown voltage, current, power dissipation, and switching speeds. 2) Typical features like low saturation voltage and wide safe operating area. 3) Graphs of characteristics like gain, capacitance, and switching times over varying voltages and currents. 4) Guidelines for mounting, pulse operation, and transient thermal resistance. 5) Appendices on application cautions and export restrictions.

1. Parameter Symbol Min. Typ. Max. Unit Conditions
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
Cob
82 150
12
18
270
V
V
V
V
MHz
pF
IC 50 A
IC 1mA
IE 50 A
VCB 400V
VEB 6V
IC/IB 100mA / 10mA
VBE(sat) V IC/IB 100mA / 10mA
VCE 5V , IC 50mA
VCB 5V , IE 50mA , f 5MHz
VCE 10V , IE 0A , f 1MHz
ton 0.6
tstg 2.7
tf 1
Type 2SA1812
MPT3
PQ
T100
3000
2SA1727
CPT3
PQ
TL
3000
2SA1776
ATV
PQ
TV2
AJ
2500
Parameter Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Limits
7
0.5
2
0.5
150
55 to +150
Unit
V
V
V
A (DC)
1.0 1A (Pulse)
W
W
W
W (Tc 25°C)
1
2SA1812
2SA1727
2SA1776 W
10
1
°C
°C
1 Single pulse 2 When mounted on a 40 40 0.7mm ceramic board.
3 When t = 1.7mm and the foil collector area on the PC board is 1cm2 or greater.
IC 100mA, RL 1.5k
IB1 IB2 10mA
VCC to 150V
Denotes hFE
2
3
High-voltage Switching Transistor
( 400V, 0.5A)
2SA1812 / 2SA1727 / 2SA1776
2SA1812 / 2SA1727 / 2SA1776
Packaging specifications and hFE
Package
hFE
Code
Basic ordering unit (pieces)
Marking
Absolute maximum ratings (Ta=25°C)
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Electrical characteristics (Ta=25°C)
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current tranfer ratio
Transition frequency
Output capacitance
Base-emitter saturation voltage
Turn-on time
Storage time
Fall time
400
400
7
10
10
1
1.2
A
A
s
s
s
400
400
Features
1) High breakdown voltage, BVCEO= 400V.
2) Low saturation voltage, typically VCE (sat) = 0.3V at IC / IB = 100mA / 10mA.
3) High switching speed, typically tf : 1 s at IC = 100mA.
4) Wide SOA (safe operating area).
Transistors
1/3Rev.A

2. 2SA1812 / 2SA1727 / 2SA1776
Electrical characteristic curves
0 -10-6 -8-4
-0.1
-0.2
-0.3
-0.4
-0.5
-2
0
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
COLLECTORCURRENT:lC(A)
Fig.1 Grouded emitter output
characteristics
-80mA
-200mA
0 -2.0-0.2-0.4-0.6-0.8-1.0-1.2-1.4-1.6-1.8
-0.0005
-0.001
-0.002
-0.005
-0.01
-0.02
-0.05
-0.1
-0.2
-0.5
-1
COLLECTOR TO EMITTER VOLTAGE : VBE (V)
COLLECTORCURRENT:lC(A)
Fig.2 Grounded emitter propagation
characteristics
VCE=-5V
-0.001
-0.002 -0.01 -0.05
-1-0.1 -0.2-0.5-0.02-0.005
1
2
5
10
20
50
100
200
500
1000
COLLECTOR CURRENT : IC (A)
DCCURRENTGAIN:hFE
Fig.3 DC current gain vs.
collector current ( )
Ta=25°C
VCE=-10V
-5V
Ta=25°C
lB=-20mA
-40mA
-60mA
-100mA
-120mA
-140m
A
-160m
A
-180m
A
-25°C
25°C
Ta=100°C
-0.001
-0.002 -0.01 -0.05
-1-0.1 -0.2-0.5-0.02-0.005
-0.01
-0.02
-0.05
-0.1
-0.2
-0.5
-1
-2
-5
-10
COLLECTOR CURRENT : IC (A)
COLLECTORSATURATIONVOLTAGE:VCE(sat)(V)
BASESATURATIONVOLTAGE:VBE(sat)(V)
Fig.6 Collector-emitter saturation
voltage vs. collector current
Base-emitter saturation
voltage vs. collector current
lC/lB=10
Ta=100°C
Ta=-25°C
VCE(sat)
VBE(sat)
-0.001
-0.002 -0.01 -0.05
-1-0.1 -0.2-0.5-0.02-0.005
1
2
5
10
20
50
100
200
500
1000
COLLECTOR CURRENT : IC (A)
DCCURRENTGAIN:hFE
Fig.4 DC current gain vs.
collector current ( )
VCE=-5V
Ta=100°C
25°C
-25°C
-0.001
-0.002 -0.01 -0.05
-1-0.1 -0.2-0.5-0.02-0.005
-0.01
-0.02
-0.05
-0.1
-0.2
-0.5
-1
-2
-5
-10
COLLECTOR CURRENT : IC (A)
COLLECTORSATURATIONVOLTAGE:VCE(sat)(V)
Fig.5 Collector-emitter saturation
voltage vs. collector current
Ta=25°C
lC/lB=50
20
10
25°C
25°C 100°C
-25°C
-1 -2 -5-10 -20 -50-100 -200-500
-0.001
-0.002
-0.005
-0.01
-0.02
-0.05
-0.1
-0.2
-0.5
-1
-2
-5
-10
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
COLLECTORCURRENT:lC(A)
Fig.9 Safe operating area (2SA1812)
Ta=25°C
(When mounted on a
40 40 0.7mm
ceramic board.)
Single
nonrepetitive
pulse
PW=10ms
100ms
lC Max. (Pulse )
0.0005
0.001 0.005
0.2 0.50.02 0.050.10.010.002
1
2
5
10
20
50
100
200
500
1000
COLLECTOR CURRENT : IE (A)
TRANSITIONFREQUENCY:fT(MHZ)
Fig.7 TRANSITION FREQUENCY
vs. EMITTER CURRENT
Ta=25°C
VCE=-5V
-0.05 -50-1 -2 -5-10 -20-0.5-0.1 -0.2
1
2
5
10
20
50
100
200
500
1000
COLLECTOR TO BASE VOLTAGE: VCB (V)
COLLECTOROUTPUTCAPACITANCE:COb(pF)
Fig.8 Collector output capacitance
vs. collector-base voltage
Ta=25°C
f=1MHZ
lE=0A
Transistors
2/3Rev.A

3. 2SA1812 / 2SA1727 / 2SA1776
Switching characteristic measurement circuit
VIN
PW
PW_~50 s
duty cycle<=1
lB1
lC
RL=1.5k
lB2
VCC_~-150V
RG
T.U.T
+VBB
IB
IC
ton tstg tf
lc
lB1
lB2
90%
10%
0.001 10001 10 1000.10.01
0.1
1
10
100
1000
10000
100000
PULSE WIDTH : PW (s)
TRANSIENTTHERMALRESISTANCE:Rth(°C/W)
Fig.10 TRANSIENT THERMAL
RESISTANCE (2SA1812)
(1) When mounted on a
40 40 0.7mm ceramic board
(2) Unmounted
(2)
(1)
-1 -2 -5 -10 -20 -50-100-200-500-1000
-0.001
-0.002
-0.005
-0.01
-0.02
-0.05
-0.1
-0.2
-0.5
-1
-2
-5
-10
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
COLLECTORCURRENT:lC(A)
Fig.11 Safe operating area (2SA1727)
Tc=25°C
Single
nonrepetitive
pulse
PW=10ms
100ms
0.001 10001 10 1000.10.01
0.1
1
10
100
1000
10000
100000
PULSE WIDTH : PW (s)
TRANSIENTTHERMALRESISTANCE:Rth(°C/W)
Fig.14 TRANSIENT THERMAL
RESISTANCE (2SA1776)
Fig.15 Switching characteristic measurement circuit
Using printed circuit board
1.7mm thick, collector plating
1cm2
or larger.
0.001 10001 10 1000.10.01
0.1
1
10
100
1000
10000
100000
TIME : t (s)
TRANSIENTTHERMALRESISTANCE:Rth(°C/W)
Fig.12 TRANSIENT THERMAL
RESISTANCE (2SA1727)
(1) Using Infinite heat sink
(2) Unmounted
(2)
(1)
lC Max. (Pulse )
DC
-1 -2 -5 -10 -20 -50-100-200-500-1000
-0.001
-0.002
-0.005
-0.01
-0.02
-0.05
-0.1
-0.2
-0.5
-1
-2
-5
-10
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
COLLECTORCURRENT:lC(A)
Fig.13 Safe operating area (2SA1776)
Ta=25°C
Single
nonrepetitive
pulse
PW=10ms
100ms
lC Max. (Pulse )
DC
Transistors
3/3Rev.A

4. Appendix
Appendix1-Rev1.1
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
Notes
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The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
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are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
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About Export Control Order in Japan
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Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.