MEMRISTOR:- THIS IS A FOURTH FUNDAMENTAL ELEMENT WHICH WE DON'T COME ACROSS MOSTLY IN OUR ELECTRICAL LIFE..SO THIS PPT GIVES YOU A PROPER VIEW ON MEMRISTOR...THIS IS AN ELEMENT MADE WITH A COMBINATION OF BOTH MEME

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MEMRISTOR
(THE FOURTH MISSING ELEMENT)
PRESENTATION BY
B.ASHOK KUMAR
GMRIT-EEE
3/31/2015

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1)INTRODUCTION
2)COMPARSION
3)WORKING
4)TYPES
5)APPLICATIONS
6)CONCLUSION
7)REFERENCES

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INTRODUCTION
 A resistor that retains a memory of its last programmed
state (resistance) is a memory-resistor.
 Memristors resistance varies according to a device
memristance function,allowing via tiny read charges,
access to a “history” of applied voltage.
 Memristor exhibit their unique properties primarily at the
nano scale. And also such properties have been observed
in action prior to the HP lab prototypes.

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HISTORY:
# Year Who Where
0 ?? Unknowns Those who may have observed memristance, while studying
thin films.
1 1960 Bernard Widrow develops a 3-terminal device called a "memistor" as a new
fundamental circuit component forming the basis of a neural network
circuit called ADALINE (ADAptive LInear NEuron).
2 1972 Leon Chua His student Sung Mo Kang publish a paper entitled "Memristive
Devices and Systems" in the Proceedings of the IEEE generalizing the
theory of memristors and memristive systems
3 2008 Stanley Williams Dmitri Strukov, Gregory Snider, Duncan Stewart, and Stan Williams,
of HP Labs, publish an article in Nature
"The missing memristor found"
identifying a link between the 2-terminal resistance switching
behavior found in nano scale systems and Leon Chua's memristor
4 2009 XiaobinWang, Yiran Chen, Haiwen Xi, Hai Li, and Dimitar Dimitrov
publishes article entitled “Spintronic Memristor Through Spin-
Torque-Induced Magnetization Motion” in IEEE Electron Device
Letters

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COMPARISON
a)G.S.OHM b)M.FARADAY
c)J.HENRY d)LEONO.CHUA
1827 1745
1831 1960

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ELEMENT TYPE UNIT
R =V/I Passive & Linear Ω(ohms)
L=ф*I Passive & Linear H(henry)
C=Q/V Passive & Linear F(farad)
M=ф/q Passive & Non-Linear Ω (ohms)

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• Leon Chua’s original graph of the hypothetical
memristor’s behavior is shown at top right;
– The graph of R. Stanley Williams’s experimental
results in the Nature paper is shown below.
• The loops map the switching behavior of the device:
– It begins with a high resistance, and as the
voltage increases, the current slowly increases.
– As charge flows through the device, the
resistance drops,
– Then, as the voltage decreases, the current
decreases but more slowly, because charge is
flowing through the device and the resistance is
still dropping.
• The result is an on-switching loop.
– When the voltage turns negative, the resistance of
the device increases, resulting in an off-switching
loop.

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Applied voltage makes the
oxygen vacancies (+ve) to
shift towards the –ve
voltage
P
T
P
T
TiOv(2-x)
TiO2
3
nm
2 nm
OxidizedReduced
(-)ve (+)ve
CONSTRUCTION AND OPERATION:

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Tio2-x
Tio2
Ron
Roff
WORKING:

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TYPES
These type of memristors primarily rely on different
material properties of thin film atomic lattices that exhibit hysterisis
under the application of charge.
1. Molecular and ionic thin film memristive systems:
The list of different memristor types below shows there are a wide variety of
systems that exhibit memristive behaviour and more are being discovered as
indusries begin to build out their research prototyping and manufacturing
infrastructures.
a) Titanium dioxide memristors:
b) polymeric(ionic)memristors:
c) Manganite memristive systems:
d) Resonant-tunneling diode memristors:

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These systems as opposed to molecular and ionic nanostructure
based systems, rely on the property of degree of freedom in electric spin. In
this system electron spin polarisation is altered
2.SPIN BASED AND MAGNETIC MEMRISTIVE SYSTEMS:
3-TERMINAL MEMRISTORS:
The advanced technology of electroplating was used to demonstrate the
viability of a non solid state three terminal
Memristor by Bernard Widrow at Stanford. The conductance was described by
the time integral of current.
a) Spintronic memristors:
b) Spin Torque Transfer (STT) MRAM:

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APPLICATIONS
 Nonvolatile memories
 Low power and remote sensing
•Memristors can retain memory states and data in power off modes.
•The fab prototypes resistance is read with alternating current so
that the stored value remains unaffected.
•NVRAM and SSD competitors could start showing on in the market
within 2 years.
•Coupled with memcapacitors and meminductors, the complimentary
circuits to the memristor which allow for the storage of charge.
•Memristors can possibly allow for nano-scale low power memory and
distributed state storage, as a future extension of NVRAM capabilities.
•These are currently all hypothetical in terms of time to market.

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 Analog Computation and Circuits:
 Cross Bar Latches as Transistor Replacements (or) Augmentors:
Solid-state memristors can be combined into
devices called crossbar latches, which could
replace transistors in future computers, taking
up a much smaller area.
•Analog Computations embodied a whole area of research which unfortunately
were not as scalable, reproducible or dependable as digital solutions.
• These memristors will now allow us to revisit a lot of the analog science
that was abandoned in the mid 1960’s.

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 Circuits which mimic Neuromorphic and Biological Systems:
 Programmable logic and signal processing:
•The memristive applications in these areas will remain relatively the
same, because it will only be a change in the under lying physical
architecture ,allowing their capabilities to expand to most likely be
unrecognizable as related.
•Simple electronic circuits based on an LC network and
memristors have been built ,and used recently to model
experiments on adaptive behaviour of unicellular organisms.
•Modeling a brain using rationated mathematics .
•Memristor cat brain.

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CONCLUSION
 MEMRISTOR will change circuit design in the 21ST
century.
 Utilization memristors effectively changes standard
protocals and structures.
 Memristors are a new class of device with very different
but useful properties for memory storage.

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REFERENCE:
• "Memristor—The Missing Circuit Element",
IEEE Transactions on Circuit Theory by Leon O
Chua (1971)
• "Memristive Devices and Systems" in the
Proceedings of the IEEE by Leon Chua and his
student Sung Mo Kang (1976)
• "The missing memristor found" Nature (may2008)
• IEEE Spectrum - The Mysterious Memristor, by
Sally Adee (may 2008)
• IEEE Spectrum - How We Found the Missing
Memristor, by R. Stanley Williams (dec 2008)

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THANK YOU
3/31/2015