IEEE presentation based on Spintronics & its semiconductor application specifically. In the conclusion there is a hyperlink of a video which i'm unable to put here and hence i will give you the address of the video so that you can use the video and make the same hyperlink as i had made here. TEDxCaltech-David Awschalom - Spintronics ( On YouTube) video : 6:21- 7:13 (in video)

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SEMINAR
SEMINAR
COORDINATOR:-
Prof. Pragati Deb
HOD EN :- Dr. Prof. Hemant
Ahujha

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SPINTRONICS
IT’S SEMICONDUCTOR INTRODUCTION
Made by :
SAMEER TRIPATHI
EN-B
IIIrd YEAR

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Investigations of the dynamics of spin-polarized electronic current through and
near materials with spin-dependent electronic structures have created a rich
new field dubbed "spintronics".

4.  What is Spintronics
 Why Spintronics
 Spintronics Vs. Electronics
 Discovery & Researches.
 The GMR ( Giant magneto resistance )
 MRAM ( Magnetic RAM)
 Spintronics in Semiconductors.
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5.  Spintronics also known as spin electronics, is the study of the
intrinsic spin of the electron and its associated magnetic moment,
in addition to its fundamental electronic charge.
 Spintronics is an emerging field of Nano scale electronics involving
the detection and manipulation of electron spin.
 electron spins are exploited as a further degree of freedom, with
implications in the efficiency of data storage and transfer. Spintronic
systems are most often realized in dilute magnetic semiconductors
(DMS), GMR, MRAM and Heusler alloys and are of particular
interest in the field of quantum computing.
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Number of
Transistors
Doubles in
every 18
months on a
Microprocesor
This may lead
to Quantum
distortion at
transistors
below 5 nm
scale.

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8.  1988 - A dramatic dependence of the electrical resistance
on the magnetization orientation was reported and named
“giant magneto resistance” (GMR) .
 1990 - “spin valve” had been introduced , with two metallic
magnetic layers separated by a nonmagnetic spacer.
 1993- Room-temperature magnetic-field sensors had been
made from spin valves which were superior to previous
devices.
 1997 - IBM introduced GMR-based magnetic media read
heads into its commercial disk-drive products.
 2005 - Sales exceeding $3 billion
 2015 – Spintronics in Semiconductors.
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9. The spin of the electron is an intrinsic angular momentum that is separate from
the angular momentum due to its orbital motion. The magnitude of the
projection of the electron's spin along an arbitrary axis is +/- (h/2) .
A spintronic device requires generation or manipulation of a spin-polarized
population of electrons, resulting in an excess of spin up or spin down
electrons
Methods include putting a material in a large magnetic field (Zeeman
effect)
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11.  It has been almost 30 years since one of the most fascinating advances in
solid state physics occurred, the discovery of the giant magnetoresistance
effect (GMR) by Grünberg and Fert in 1988.
 In thin metallic film systems, they observed that the magnetization of adjacent
ferromagnetic films, separated by a thin non-magnetic interlayer, spontaneously
align parallel or antiparallel, depending on the thickness of the interlayer. The
orientation of the magnetization in the ferromagnetic layers strongly influences the
resistance of the system.
 A parallel orientation is characterized by an electrical state of low resistance,
while an antiparallel orientation is a state of high resistance.
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12.  The first industrial application of GMR thin film systems after the
discovery of the effect was in the field of information technology: the
realization of GMR based hard-disk read-heads 1997. Here, the GMR
sensor is used to detect the magnetization direction of the bits on the
magnetic recording medium, which are assigned to a logical 0 or 1,
respectively.
 To detect the transition between bits GMR spin-valve sensors are
commonly used, which have been first proposed by Dieny.
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• Advanced form of GMR
• More reliable and more sensitive at room
temp.
• 2 layers of Ferromagnetic metal and
separated by an ultra thin layer of insulator
of 1nm.
• Its major application is MRAM.
The MTJ works because of a quantum phenomenon
called electron tunneling. The insulating layer is only a
few nanometers thick and that allows electrons to tunnel
through it from one plate to the other. Depending on if the
magnetic fields of each plate are oriented in parallel or not
will determine how much tunneling will occur, and that
changes the electrical resistance of the magnetic tunnel
junction, which determines the 1 or 0 in a binary bit.

15.  MRAM (magneto resistive random access memory) is a method
of storing data bits using magnetic states instead of the electrical
charges used by dynamic random access memory (DRAM).
 Early MRAM systems used electrical currents to induce the magnetic
field in the MTJ to read or write the cell, but that requires more power
than is ideal for modern computer systems. Today, most effort is being
placed in using something called spin transfer torque (STT) to read or
write an MRAM cell.
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DIAMOND

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EMBRACING FLAWS IN DIAMOND
 Diamond is an insulator but defective diamonds are
Semiconductors.
 These diamonds can be used in spintronic devices.
 Diamond having a Nitrogen atom at a missing Carbon can do
magic as it can be used to trap an electron.
 Electron’s spin can thus be manipulated and used to transfer and
store the data.
 Even the nitrogen and electron duo can make an atomic memory by
creating a data trap.

20. Here is the video regarding how a Diamond can
be used as a spintronic device material.
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21. THANK YOU
ANY QUEERIES
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