This document describes the fabrication and characterization of junctionless InGaAs MOSFETs with InAlAs barrier isolation and thinned InGaAs channels. A digital wet etching process was used to thin InGaAs channels down to 16 nm, improving subthreshold swing but degrading drive current. Devices with 20 nm channels showed the best balance of performance metrics, with a subthreshold swing of 125 mV/decade and an on-off current ratio of 1.5x105. Electrical characterization confirmed low interface trap densities between 1.5x1012 and 3.5x1012 eV-1cm-2 and an effective mobility of 1200 cm2/V-s for 20-24 nm channels, dropping for 16 nm channels