The document summarizes research investigating As-doped ZnO films synthesized via thermal annealing of ZnSe/GaAs heterostructures. Key findings include:
1) XRD and Raman analysis showed the films were polycrystalline c-axis oriented ZnO containing nanometer-sized As clusters.
2) SEM images showed the surface consisted of dense, uniformly sized grains.
3) Photoluminescence spectra exhibited a sharp band edge emission line at 3.262 eV, indicating high optical quality.
4) Auger electron spectroscopy detected uniform As diffusion through the ZnO film and at the surface, suggesting As incorporation into the ZnO lattice.
Synthesis, Characterization of ZnS nanoparticles by Coprecipitation method us...IOSR Journals
ZnS nanoparticles are prepared by coprecipitation method using various capping agents like PVP (polyvinylpyrrolidone), PVA (polyvinylalcohol) and PEG-4000 (polyethyleneglycol). These are characterized by UV-Visible spectra, X-ray diffraction (XRD) studies, Fourier Transform Infra-red spectra (FTIR) and Transmission electron microscopy (TEM). UV-Visible absorption spectra are used to find the optical band gap and the values obtained have been found to be in the range of 3.80-4.00eV. The particle size of nanoparticles calculated from XRD pattern has been in the range of 2-4 nm. It is also observed that the particle size of nanoparticle is affected by the nature of capping agent. Photo catalytic degradation of xylenol orange (XO) by the nanoparticles shows that these act as photo catalysts under sunlight irradiation. The XO dye was degraded more than 87.24, 83.42 and 73.05% in the presence of PEG-4000, PVA and PVP capped ZnS nanoparticles in 120, 150 and 180 min. respectively. The kinetics of catalyzed by synthesized ZnS nanoparticles with XO dye follows pseudo-first order kinetics with reasonable apparent rate constants.
Improvement Structural and Optical Properties of ZnO/ PVA Nanocompositesiosrjce
IOSR Journal of Applied Physics (IOSR-JAP) is a double blind peer reviewed International Journal that provides rapid publication (within a month) of articles in all areas of physics and its applications. The journal welcomes publications of high quality papers on theoretical developments and practical applications in applied physics. Original research papers, state-of-the-art reviews, and high quality technical notes are invited for publications.
IJERA (International journal of Engineering Research and Applications) is International online, ... peer reviewed journal. For more detail or submit your article, please visit www.ijera.com
Surface Modification of Nanoparticles for Biomedical ApplicationsReset_co
Surface ligands on nanoparticles control their properties and interactions, which can be harnessed for biomedical imaging, cell targeting, and therapeutic applications.
Synthesis, Characterization of ZnS nanoparticles by Coprecipitation method us...IOSR Journals
ZnS nanoparticles are prepared by coprecipitation method using various capping agents like PVP (polyvinylpyrrolidone), PVA (polyvinylalcohol) and PEG-4000 (polyethyleneglycol). These are characterized by UV-Visible spectra, X-ray diffraction (XRD) studies, Fourier Transform Infra-red spectra (FTIR) and Transmission electron microscopy (TEM). UV-Visible absorption spectra are used to find the optical band gap and the values obtained have been found to be in the range of 3.80-4.00eV. The particle size of nanoparticles calculated from XRD pattern has been in the range of 2-4 nm. It is also observed that the particle size of nanoparticle is affected by the nature of capping agent. Photo catalytic degradation of xylenol orange (XO) by the nanoparticles shows that these act as photo catalysts under sunlight irradiation. The XO dye was degraded more than 87.24, 83.42 and 73.05% in the presence of PEG-4000, PVA and PVP capped ZnS nanoparticles in 120, 150 and 180 min. respectively. The kinetics of catalyzed by synthesized ZnS nanoparticles with XO dye follows pseudo-first order kinetics with reasonable apparent rate constants.
Improvement Structural and Optical Properties of ZnO/ PVA Nanocompositesiosrjce
IOSR Journal of Applied Physics (IOSR-JAP) is a double blind peer reviewed International Journal that provides rapid publication (within a month) of articles in all areas of physics and its applications. The journal welcomes publications of high quality papers on theoretical developments and practical applications in applied physics. Original research papers, state-of-the-art reviews, and high quality technical notes are invited for publications.
IJERA (International journal of Engineering Research and Applications) is International online, ... peer reviewed journal. For more detail or submit your article, please visit www.ijera.com
Surface Modification of Nanoparticles for Biomedical ApplicationsReset_co
Surface ligands on nanoparticles control their properties and interactions, which can be harnessed for biomedical imaging, cell targeting, and therapeutic applications.
The Evaluation of p-type doping in ZnO taking Co as dopantIOSR Journals
P-type doping is excessively difficult in wide-band gap semiconductors, such as GaN, ZnSe, and
indeed ZnO. Practically it is very difficult to obtain stable and true p-type ZnO. Under standard conditions there
are reports on decaying or even completely absent p-type conductivity. Several hypotheses have been
formulated to explain this unusual behaviour. The commonly accepted theory is that the elements assume
undesired (non-substitutional) positions or form complexes, resulting in self-compensation of the p-type
conductivity. Note that p-dopants can be compensated by low energy native defects, such as Zni or VO, or
background impurities, such as aforementioned H. Deep impurity levels can cause significant resistance to the
formation of a shallow acceptor level. In this work the p-type doped Zno based samples are prepared where
incorporation of Co into the ZnO crystal lattice is done and various measurements like Sheet resistivity, Hall
Voltage, Hall mobility and 2d hole concentration are made. From the results it has been clearly found that the
p-type doping takes place successfully and can be used for various future applications
Development of Ni-doped Yttria stabilized Zirconia composite for SOFC applica...IOSRJAP
Ni-doped Yttria stabilized Zirconia (NiO/YSZ) has been synthesized using low cost combustion process from an aqueous solution containing ZrO(NO3)2.6H2O, Y(NO3)3.6H2O, Ni(NO3)2.6H2O and urea. Pellets were sintered at 13500C for 5 hours and its sintered density is estimated to be of 95%. Sintered pellets were characterized using X-ray diffraction (XRD), scanning electron microscopy (SEM) & X-ray photoelectron spectroscopy (XPS) techniques. From the XRD analysis, as grown powder of NiO/YSZ showed nano-crystalline behavior with homogeneous mixture of YSZ and NiO phases. However sintered powder showed µ-size dense grain growth. Temperature and frequency dependent dielectric properties are corroborated with the conduction mechanism. Both dielectric constant (K) and loss (tan δ) are increased sharply at high temperature region, which is expected to be the onset of dipolar relaxation phenomena due to the presence of oxygen vacancies. A mixed conductivity involving ionic conduction in the high temperature range and electronic conduction in the low temperature range was observed. The decrease in K and tan δ with increase in frequency at a given temperature suggests the dynamic interaction of oxygen vacancies & oxide ion pairs.
OPTICAL BEHAVIOUR OF SYNTHESIZED ZNO NANOTABLETS AND ITS TRANSFORMED NANORODS...antjjournal
We are reporting the preparation of ZnO nanotablets at relatively low temperature (1500C) using zinc acetate [Zn(Ac)2], NaOH, cetyltrimethylammonium bromide (CTAB) by solvothermal method. By adjusting
the molar ratio of the reactants we obtained nanorods and we also obtained the variation of the dimension
of the nanorods using hydrazine hydrate as capping reagent. The prepared samples were morphologically
recognized as well crystallized. The average diameter of the ZnO nanotablets were ranging from 500 to 600 nm and the average thickness of the nanotablets were ranging from 85 to 90 nm. The length of ZnO nanorods were ranging from 300 to several micrometers and breadth of the ZnO nanorods were ranging from 80 to 160 nm. The optical properties of the prepared materials have also been studied with the exhibition of its interesting behavior.
International Journal of Engineering Research and Applications (IJERA) is an open access online peer reviewed international journal that publishes research and review articles in the fields of Computer Science, Neural Networks, Electrical Engineering, Software Engineering, Information Technology, Mechanical Engineering, Chemical Engineering, Plastic Engineering, Food Technology, Textile Engineering, Nano Technology & science, Power Electronics, Electronics & Communication Engineering, Computational mathematics, Image processing, Civil Engineering, Structural Engineering, Environmental Engineering, VLSI Testing & Low Power VLSI Design etc.
Preparation and Properties of Nanocrystalline Zinc Oxide Thin Filmsijtsrd
Metal oxide is highly important material which possesses many unique optical and electrical properties for applications in many areas such as Solar cells, Gas sensors and so on. With the development of research and applications of Metal oxide thin films, research results are verified that the morphology of Metal oxide thin films are plays an important role in applications of these films. Variety of morphologies, complex structure has been developed by physical or chemical methods. However the work on controlled growth of these films is still in developing state. Therefore in present work we deposited ZnS and ZnO metal oxides thin films on different substrates by Chemical Bath Deposition Technique. Structural, Surface Morphology and Optical properties of as deposited films were investigated by XRD, SEM, and UV VIS Spectrophotometer. The band gap is also calculated from the equation relating absorption co efficient to wavelength. The band gap indicates the film is transmitting within the visible range and the band gaps changes because of the grain size of the films. We also observed that, the change in preparative parameters affects the deposition rate of thin films. From the observation, it is clear that the growth rate increases as the deposition temperature, increases. S. S. Kawar "Preparation and Properties of Nanocrystalline Zinc Oxide Thin Films" Published in International Journal of Trend in Scientific Research and Development (ijtsrd), ISSN: 2456-6470, Volume-4 | Issue-4 , June 2020, URL: https://www.ijtsrd.com/papers/ijtsrd31623.pdf Paper Url :https://www.ijtsrd.com/physics/nanotechnology/31623/preparation-and-properties-of-nanocrystalline-zinc-oxide-thin-films/s-s-kawar
Vapor growth of binary and ternary phosphorusbased semiconductors into TiO2 n...Pawan Kumar
We report successful synthesis of low band gap inorganic polyphosphide and TiO2 heterostructures with
the aid of short-way transport reactions. Binary and ternary polyphosphides (NaP7, SnIP, and (CuI)3P12)
were successfully reacted and deposited into electrochemically fabricated TiO2 nanotubes. Employing
vapor phase reaction deposition, the cavities of 100 mm long TiO2 nanotubes were infiltrated;
approximately 50% of the nanotube arrays were estimated to be infiltrated in the case of NaP7. Intensive
characterization of the hybrid materials with techniques including SEM, FIB, HR-TEM, Raman
spectroscopy, XRD, and XPS proved the successful vapor phase deposition and synthesis of the
substances on and inside the nanotubes. The polyphosphide@TiO2 hybrids exhibited superior water
splitting performance compared to pristine materials and were found to be more active at higher
wavelengths. SnIP@TiO2 emerged to be the most active among the polyphosphide@TiO2 materials. The
improved photocatalytic performance might be due to Fermi level re-alignment and a lower charge
transfer resistance which facilitated better charge separation from inorganic phosphides to TiO2.
The Evaluation of p-type doping in ZnO taking Co as dopantIOSR Journals
P-type doping is excessively difficult in wide-band gap semiconductors, such as GaN, ZnSe, and
indeed ZnO. Practically it is very difficult to obtain stable and true p-type ZnO. Under standard conditions there
are reports on decaying or even completely absent p-type conductivity. Several hypotheses have been
formulated to explain this unusual behaviour. The commonly accepted theory is that the elements assume
undesired (non-substitutional) positions or form complexes, resulting in self-compensation of the p-type
conductivity. Note that p-dopants can be compensated by low energy native defects, such as Zni or VO, or
background impurities, such as aforementioned H. Deep impurity levels can cause significant resistance to the
formation of a shallow acceptor level. In this work the p-type doped Zno based samples are prepared where
incorporation of Co into the ZnO crystal lattice is done and various measurements like Sheet resistivity, Hall
Voltage, Hall mobility and 2d hole concentration are made. From the results it has been clearly found that the
p-type doping takes place successfully and can be used for various future applications
Development of Ni-doped Yttria stabilized Zirconia composite for SOFC applica...IOSRJAP
Ni-doped Yttria stabilized Zirconia (NiO/YSZ) has been synthesized using low cost combustion process from an aqueous solution containing ZrO(NO3)2.6H2O, Y(NO3)3.6H2O, Ni(NO3)2.6H2O and urea. Pellets were sintered at 13500C for 5 hours and its sintered density is estimated to be of 95%. Sintered pellets were characterized using X-ray diffraction (XRD), scanning electron microscopy (SEM) & X-ray photoelectron spectroscopy (XPS) techniques. From the XRD analysis, as grown powder of NiO/YSZ showed nano-crystalline behavior with homogeneous mixture of YSZ and NiO phases. However sintered powder showed µ-size dense grain growth. Temperature and frequency dependent dielectric properties are corroborated with the conduction mechanism. Both dielectric constant (K) and loss (tan δ) are increased sharply at high temperature region, which is expected to be the onset of dipolar relaxation phenomena due to the presence of oxygen vacancies. A mixed conductivity involving ionic conduction in the high temperature range and electronic conduction in the low temperature range was observed. The decrease in K and tan δ with increase in frequency at a given temperature suggests the dynamic interaction of oxygen vacancies & oxide ion pairs.
OPTICAL BEHAVIOUR OF SYNTHESIZED ZNO NANOTABLETS AND ITS TRANSFORMED NANORODS...antjjournal
We are reporting the preparation of ZnO nanotablets at relatively low temperature (1500C) using zinc acetate [Zn(Ac)2], NaOH, cetyltrimethylammonium bromide (CTAB) by solvothermal method. By adjusting
the molar ratio of the reactants we obtained nanorods and we also obtained the variation of the dimension
of the nanorods using hydrazine hydrate as capping reagent. The prepared samples were morphologically
recognized as well crystallized. The average diameter of the ZnO nanotablets were ranging from 500 to 600 nm and the average thickness of the nanotablets were ranging from 85 to 90 nm. The length of ZnO nanorods were ranging from 300 to several micrometers and breadth of the ZnO nanorods were ranging from 80 to 160 nm. The optical properties of the prepared materials have also been studied with the exhibition of its interesting behavior.
International Journal of Engineering Research and Applications (IJERA) is an open access online peer reviewed international journal that publishes research and review articles in the fields of Computer Science, Neural Networks, Electrical Engineering, Software Engineering, Information Technology, Mechanical Engineering, Chemical Engineering, Plastic Engineering, Food Technology, Textile Engineering, Nano Technology & science, Power Electronics, Electronics & Communication Engineering, Computational mathematics, Image processing, Civil Engineering, Structural Engineering, Environmental Engineering, VLSI Testing & Low Power VLSI Design etc.
Preparation and Properties of Nanocrystalline Zinc Oxide Thin Filmsijtsrd
Metal oxide is highly important material which possesses many unique optical and electrical properties for applications in many areas such as Solar cells, Gas sensors and so on. With the development of research and applications of Metal oxide thin films, research results are verified that the morphology of Metal oxide thin films are plays an important role in applications of these films. Variety of morphologies, complex structure has been developed by physical or chemical methods. However the work on controlled growth of these films is still in developing state. Therefore in present work we deposited ZnS and ZnO metal oxides thin films on different substrates by Chemical Bath Deposition Technique. Structural, Surface Morphology and Optical properties of as deposited films were investigated by XRD, SEM, and UV VIS Spectrophotometer. The band gap is also calculated from the equation relating absorption co efficient to wavelength. The band gap indicates the film is transmitting within the visible range and the band gaps changes because of the grain size of the films. We also observed that, the change in preparative parameters affects the deposition rate of thin films. From the observation, it is clear that the growth rate increases as the deposition temperature, increases. S. S. Kawar "Preparation and Properties of Nanocrystalline Zinc Oxide Thin Films" Published in International Journal of Trend in Scientific Research and Development (ijtsrd), ISSN: 2456-6470, Volume-4 | Issue-4 , June 2020, URL: https://www.ijtsrd.com/papers/ijtsrd31623.pdf Paper Url :https://www.ijtsrd.com/physics/nanotechnology/31623/preparation-and-properties-of-nanocrystalline-zinc-oxide-thin-films/s-s-kawar
Vapor growth of binary and ternary phosphorusbased semiconductors into TiO2 n...Pawan Kumar
We report successful synthesis of low band gap inorganic polyphosphide and TiO2 heterostructures with
the aid of short-way transport reactions. Binary and ternary polyphosphides (NaP7, SnIP, and (CuI)3P12)
were successfully reacted and deposited into electrochemically fabricated TiO2 nanotubes. Employing
vapor phase reaction deposition, the cavities of 100 mm long TiO2 nanotubes were infiltrated;
approximately 50% of the nanotube arrays were estimated to be infiltrated in the case of NaP7. Intensive
characterization of the hybrid materials with techniques including SEM, FIB, HR-TEM, Raman
spectroscopy, XRD, and XPS proved the successful vapor phase deposition and synthesis of the
substances on and inside the nanotubes. The polyphosphide@TiO2 hybrids exhibited superior water
splitting performance compared to pristine materials and were found to be more active at higher
wavelengths. SnIP@TiO2 emerged to be the most active among the polyphosphide@TiO2 materials. The
improved photocatalytic performance might be due to Fermi level re-alignment and a lower charge
transfer resistance which facilitated better charge separation from inorganic phosphides to TiO2.
Vapor growth of binary and ternary phosphorus-based semiconductors into TiO 2...Pawan Kumar
We report successful synthesis of low band gap inorganic polyphosphide and TiO2 heterostructures with the aid of short-way transport reactions. Binary and ternary polyphosphides (NaP7, SnIP, and (CuI)3P12) were successfully reacted and deposited into electrochemically fabricated TiO2 nanotubes. Employing vapor phase reaction deposition, the cavities of 100 μm long TiO2 nanotubes were infiltrated; approximately 50% of the nanotube arrays were estimated to be infiltrated in the case of NaP7. Intensive characterization of the hybrid materials with techniques including SEM, FIB, HR-TEM, Raman spectroscopy, XRD, and XPS proved the successful vapor phase deposition and synthesis of the substances on and inside the nanotubes. The polyphosphide@TiO2 hybrids exhibited superior water splitting performance compared to pristine materials and were found to be more active at higher wavelengths. SnIP …
ABSTRACT: In our previous article, the geometrical optimizations have been performed for the (CaO)n, n = 1-
4, 6, 8, 9, and 12 cluster models, [WJERT, 2019, 5 (1), 328-341]. In this study,we have investigated the
adsorption of performance NO2gas towards metal oxide clusters (CaO)n, n = 2, 3, 4, 6, 8, 9, 12) cluster models,
and focus on electron transfer between the CaO and NO2 molecule by employing density functional theory
(DFT), B3LYP method. Results show that the charge transferred goes from surface clusters to NO2 antibonding orbitals which makes more reactive, and becomes stronger. Moreover, NO2 adsorbs at the one, two
Ca2+sites forming a nitrite (NO2
−). Meanwhile, the interaction of NO2 with Lewis baseO
2−,and consequently may
form a nitrate (NO3
2−) species, which is less adsorption favorable. The total adsorption energies revealed that
NO2 gas was strongly chemisorbed on the(CaO)n, n = 2, 4, 6 and 8cluster models, whereas (CaO)n, n=3, 9 and
12 results in a weak interactions. Further, the results of optimized structure showed that the total adsorption
energies and charge transfer contributions indicated that CaO is a better acid-base than MgO, due to the
increasing basicity and bigger cationic size of the CaO. The reason for these different basicities and reactivates
can be ascribed to the different electrostatic (Madelung) potentials at the two surfaces.
Generative AI Deep Dive: Advancing from Proof of Concept to ProductionAggregage
Join Maher Hanafi, VP of Engineering at Betterworks, in this new session where he'll share a practical framework to transform Gen AI prototypes into impactful products! He'll delve into the complexities of data collection and management, model selection and optimization, and ensuring security, scalability, and responsible use.
Alt. GDG Cloud Southlake #33: Boule & Rebala: Effective AppSec in SDLC using ...James Anderson
Effective Application Security in Software Delivery lifecycle using Deployment Firewall and DBOM
The modern software delivery process (or the CI/CD process) includes many tools, distributed teams, open-source code, and cloud platforms. Constant focus on speed to release software to market, along with the traditional slow and manual security checks has caused gaps in continuous security as an important piece in the software supply chain. Today organizations feel more susceptible to external and internal cyber threats due to the vast attack surface in their applications supply chain and the lack of end-to-end governance and risk management.
The software team must secure its software delivery process to avoid vulnerability and security breaches. This needs to be achieved with existing tool chains and without extensive rework of the delivery processes. This talk will present strategies and techniques for providing visibility into the true risk of the existing vulnerabilities, preventing the introduction of security issues in the software, resolving vulnerabilities in production environments quickly, and capturing the deployment bill of materials (DBOM).
Speakers:
Bob Boule
Robert Boule is a technology enthusiast with PASSION for technology and making things work along with a knack for helping others understand how things work. He comes with around 20 years of solution engineering experience in application security, software continuous delivery, and SaaS platforms. He is known for his dynamic presentations in CI/CD and application security integrated in software delivery lifecycle.
Gopinath Rebala
Gopinath Rebala is the CTO of OpsMx, where he has overall responsibility for the machine learning and data processing architectures for Secure Software Delivery. Gopi also has a strong connection with our customers, leading design and architecture for strategic implementations. Gopi is a frequent speaker and well-known leader in continuous delivery and integrating security into software delivery.
The Art of the Pitch: WordPress Relationships and SalesLaura Byrne
Clients don’t know what they don’t know. What web solutions are right for them? How does WordPress come into the picture? How do you make sure you understand scope and timeline? What do you do if sometime changes?
All these questions and more will be explored as we talk about matching clients’ needs with what your agency offers without pulling teeth or pulling your hair out. Practical tips, and strategies for successful relationship building that leads to closing the deal.
GraphSummit Singapore | The Art of the Possible with Graph - Q2 2024Neo4j
Neha Bajwa, Vice President of Product Marketing, Neo4j
Join us as we explore breakthrough innovations enabled by interconnected data and AI. Discover firsthand how organizations use relationships in data to uncover contextual insights and solve our most pressing challenges – from optimizing supply chains, detecting fraud, and improving customer experiences to accelerating drug discoveries.
Observability Concepts EVERY Developer Should Know -- DeveloperWeek Europe.pdfPaige Cruz
Monitoring and observability aren’t traditionally found in software curriculums and many of us cobble this knowledge together from whatever vendor or ecosystem we were first introduced to and whatever is a part of your current company’s observability stack.
While the dev and ops silo continues to crumble….many organizations still relegate monitoring & observability as the purview of ops, infra and SRE teams. This is a mistake - achieving a highly observable system requires collaboration up and down the stack.
I, a former op, would like to extend an invitation to all application developers to join the observability party will share these foundational concepts to build on:
GDG Cloud Southlake #33: Boule & Rebala: Effective AppSec in SDLC using Deplo...James Anderson
Effective Application Security in Software Delivery lifecycle using Deployment Firewall and DBOM
The modern software delivery process (or the CI/CD process) includes many tools, distributed teams, open-source code, and cloud platforms. Constant focus on speed to release software to market, along with the traditional slow and manual security checks has caused gaps in continuous security as an important piece in the software supply chain. Today organizations feel more susceptible to external and internal cyber threats due to the vast attack surface in their applications supply chain and the lack of end-to-end governance and risk management.
The software team must secure its software delivery process to avoid vulnerability and security breaches. This needs to be achieved with existing tool chains and without extensive rework of the delivery processes. This talk will present strategies and techniques for providing visibility into the true risk of the existing vulnerabilities, preventing the introduction of security issues in the software, resolving vulnerabilities in production environments quickly, and capturing the deployment bill of materials (DBOM).
Speakers:
Bob Boule
Robert Boule is a technology enthusiast with PASSION for technology and making things work along with a knack for helping others understand how things work. He comes with around 20 years of solution engineering experience in application security, software continuous delivery, and SaaS platforms. He is known for his dynamic presentations in CI/CD and application security integrated in software delivery lifecycle.
Gopinath Rebala
Gopinath Rebala is the CTO of OpsMx, where he has overall responsibility for the machine learning and data processing architectures for Secure Software Delivery. Gopi also has a strong connection with our customers, leading design and architecture for strategic implementations. Gopi is a frequent speaker and well-known leader in continuous delivery and integrating security into software delivery.
GraphSummit Singapore | The Future of Agility: Supercharging Digital Transfor...Neo4j
Leonard Jayamohan, Partner & Generative AI Lead, Deloitte
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zkStudyClub - Reef: Fast Succinct Non-Interactive Zero-Knowledge Regex ProofsAlex Pruden
This paper presents Reef, a system for generating publicly verifiable succinct non-interactive zero-knowledge proofs that a committed document matches or does not match a regular expression. We describe applications such as proving the strength of passwords, the provenance of email despite redactions, the validity of oblivious DNS queries, and the existence of mutations in DNA. Reef supports the Perl Compatible Regular Expression syntax, including wildcards, alternation, ranges, capture groups, Kleene star, negations, and lookarounds. Reef introduces a new type of automata, Skipping Alternating Finite Automata (SAFA), that skips irrelevant parts of a document when producing proofs without undermining soundness, and instantiates SAFA with a lookup argument. Our experimental evaluation confirms that Reef can generate proofs for documents with 32M characters; the proofs are small and cheap to verify (under a second).
Paper: https://eprint.iacr.org/2023/1886
Dr. Sean Tan, Head of Data Science, Changi Airport Group
Discover how Changi Airport Group (CAG) leverages graph technologies and generative AI to revolutionize their search capabilities. This session delves into the unique search needs of CAG’s diverse passengers and customers, showcasing how graph data structures enhance the accuracy and relevance of AI-generated search results, mitigating the risk of “hallucinations” and improving the overall customer journey.
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Unlocking Productivity: Leveraging the Potential of Copilot in Microsoft 365, a presentation by Christoforos Vlachos, Senior Solutions Manager – Modern Workplace, Uni Systems
LF Energy Webinar: Electrical Grid Modelling and Simulation Through PowSyBl -...DanBrown980551
Do you want to learn how to model and simulate an electrical network from scratch in under an hour?
Then welcome to this PowSyBl workshop, hosted by Rte, the French Transmission System Operator (TSO)!
During the webinar, you will discover the PowSyBl ecosystem as well as handle and study an electrical network through an interactive Python notebook.
PowSyBl is an open source project hosted by LF Energy, which offers a comprehensive set of features for electrical grid modelling and simulation. Among other advanced features, PowSyBl provides:
- A fully editable and extendable library for grid component modelling;
- Visualization tools to display your network;
- Grid simulation tools, such as power flows, security analyses (with or without remedial actions) and sensitivity analyses;
The framework is mostly written in Java, with a Python binding so that Python developers can access PowSyBl functionalities as well.
What you will learn during the webinar:
- For beginners: discover PowSyBl's functionalities through a quick general presentation and the notebook, without needing any expert coding skills;
- For advanced developers: master the skills to efficiently apply PowSyBl functionalities to your real-world scenarios.
Goodbye Windows 11: Make Way for Nitrux Linux 3.5.0!SOFTTECHHUB
As the digital landscape continually evolves, operating systems play a critical role in shaping user experiences and productivity. The launch of Nitrux Linux 3.5.0 marks a significant milestone, offering a robust alternative to traditional systems such as Windows 11. This article delves into the essence of Nitrux Linux 3.5.0, exploring its unique features, advantages, and how it stands as a compelling choice for both casual users and tech enthusiasts.
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Large Language Model (LLM) and it’s Geospatial Applications
Investigation of As-doped ZnO films synthesized via thermal annealing of ZnSe/GaAs heterostructures
1. ARTICLE IN PRESS
Journal of Crystal Growth 310 (2008) 3149– 3153
Contents lists available at ScienceDirect
Journal of Crystal Growth
journal homepage: www.elsevier.com/locate/jcrysgro
Investigation of As-doped ZnO films synthesized via thermal annealing of
ZnSe/GaAs heterostructures
O. Maksimov Ã, B.Z. Liu
Materials Research Institute, Pennsylvania State University, University Park, PA 16802, USA
a r t i c l e in fo abstract
Article history: We synthesized ZnO films via oxidative annealing of ZnSe/GaAs heterostructures and investigated their
Received 29 January 2008 structural and optical properties. Films were polycrystalline, c-axis oriented and exhibited superior
Received in revised form optical properties. In addition, we detected nanometer-size As clusters into the ZnO film and a GaxOy
26 February 2008 layer at the ZnO/GaAs interface. Formation of an interfacial layer can prevent use of this technique for
Accepted 14 March 2008
p-type doping and complicates identification of the origin of p-type response in the annealed ZnO/GaAs
Communicated by R. Fornari
Available online 20 March 2008 heterostructures.
& 2008 Elsevier B.V. All rights reserved.
PACS:
71.55.Gs
81.40.Ef
82.80.Pv
87.64.Bx
Keywords:
A1. Auger electron spectroscopy
A1. p-Type doping
B1. ZnO
B2. Semiconducting II–VI materials
1. Introduction with transition metals [5] coupled with nanosecond-long spin
coherence time measured at low temperatures [6] makes this
There is a broad technological and scientific interest in zinc material extremely promising for future application in spin
oxide (ZnO) due to its unique physical and chemical properties [1]. electronics.
It is a radiatively hard wide band gap semiconductor (EG$3.37 eV) Although high crystalline quality ZnO films were grown using
that can be easily doped n-type. Its band gap energy can be tuned molecular beam epitaxy (MBE), chemical vapor deposition (CVD),
by alloying with MgO and CdO from 7.9 to 2.3 eV [2], covering and pulsed laser deposition (PLD), further progress in this area is
deep-UV to visible regions of the spectrum. It has a much higher slowed down by the difficulties associated with doping ZnO
exciton binding energy, 60 meV, when compared with other wide p-type. It is generally acknowledged that high enough doping
band gap semiconductors like GaN or SiC, leading to the efficient levels are difficult to achieve both due to the background n-type
excitonic transitions at room temperature. In addition, owing to doping originating from the presence of H impurities and point
the availability of native substrates and amenability to wet defects, such as O vacancies and Zn interstitials [7–11], and due to
chemical etching, ZnO is an extremely promising material for the large acceptor activation energies and/or low solubility of
the development of optoelectronic devices, such as ultraviolet and commonly used group V (N, P, As) and group I (Li) dopants. In
visible light-emitting diodes (LEDs) and detectors. ZnO nanos- addition, a slow transition from p-type to n-type conductivity was
tructures (nanoparticles, nanorods, nanobelts, etc.), which can be observed by a number of research groups. It was tentatively
synthesized using inexpensive physical vapor transport techni- assigned either to the acceptor migration from the substitutional
ques, were shown to be extremely promising for application as gas to the interstitial position or to the hydrogen diffusion [12,13].
sensors, due to the large surface to volume ratio [3], and In spite of these difficulties, there are reports of ZnO-doped
microlasers due to the superior optical properties [4]. Further- p-type with group V (N [14,15], P [16,17], As [18–22], and Sb
more, reports of high-temperature ferromagnetism in ZnO doped [23,24]) and group I (Li [25]) elements. Co-doping with
two potential acceptors (N and As) [26] or acceptor and donor
(N and Al) [27,28] was also used. In the case of the acceptor–donor
à Corresponding author. Tel.: +17242956624; fax: +17242956617. co-doping, the improvement is believed to be primarily due to the
E-mail address: maksimov@netzero.net (O. Maksimov). higher solubility of the forming N–Al–N complex. A temperature
0022-0248/$ - see front matter & 2008 Elsevier B.V. All rights reserved.
doi:10.1016/j.jcrysgro.2008.03.027
2. ARTICLE IN PRESS
3150 O. Maksimov, B.Z. Liu / Journal of Crystal Growth 310 (2008) 3149–3153
modulation epitaxy technique was also applied to achieve
002 GaAs
N-doped p-type ZnO [29]. Here, nitrogen-doped layers were
Intensity (Arb. Units)
grown at low temperature (400 1C) to increase solubility followed
by the deposition of thin undoped layer at high temperature 002
(950 1C) to improve crystalline quality. 3.05
In particular, p-type doping utilizing thermal As diffusion from
Intensity (Arb. Units)
GaAs substrates into the ZnO films [18,21,30–34] and by oxidation
of the ZnTe/GaAs heterostrucutres [35,36] was realized by a number
of research groups. In addition, both n- and p-type ZnO films were
102
synthesized through the annealing of undoped ZnSe crystals in the 12 16 20 24
activated oxygen atmosphere (radical beam gettering epitaxy) ω (deg.)
[37,38]. However, additional effects, such as formation of an
interfacial Zn2As2O7 layer [39], Ga diffusion into ZnO film [40,41], 004GaAs
and Zn diffusion into the GaAs substrate [42] were also reported. 110
Also, isolated As atoms should act either as deep acceptors (As is
incorporated substitutionally at the O position—AsO) and donors x100
101 004
(As is incorporated substitutionally at the Zn position—AsZn) or
remain amphoteric (As is incorporated interstitially—Asi). Thus,
p-type conductivity is explained by the formation of a complex with 30 40 50 60 70
two spontaneous Zn vacancies (AsZnÀ2VZn) [43]. Clearly, data Θ -2Θ (deg.)
interpretation is not straightforward and the origin of the p-type Fig. 1. XRD yÀ2y scan registered from the annealed ZnSe/GaAs heterostructure.
response remains controversial. Hence, we synthesized ZnO films by Inset is the XRD o scan registered for the /0 0 2S ZnO peak.
thermal oxidation of MBE-grown ZnSe/GaAs heterostructures and
investigated their structural and optical properties. A particular /0 0 1S or c-axis preferred orientation is usually observed due
emphasis was dedicated to the film/substrate interface that was to its lowest surface free energy. Some misoriented ZnO grains
examined using Auger electron spectroscopy (AES). (/1 0 1S, /1 0 2S and /11 0S) are also present. There were
observations of Te and ZnO2 inclusions in the oxidized ZnTe and
2. Experimental details ZnxNy films [35,46]. Here, we do not detect any peaks that can be
indexed as ZnSe, Se, or ZnO2 phases suggesting that ZnSe was
High crystalline quality ZnSe films were grown in the Veeco entirely transformed into ZnO by oxidative annealing. The /0 0 2S
MBE system on the epi-ready semi-insulating (0 0 1) GaAs ZnO peak is relatively narrow, with a full-width at half-maximum
substrates. Next, they were oxidized in a horizontal tube furnace (FWHM) of $0.31, which is comparable to the previous reports
by annealing in an oxygen flow for 2 h at 500 1C. Our annealing time [31,49]. This corresponds to the mean grain size of $27 nm
exceeds rapid annealing used for ZnTe films (1–25 min) [35,36] and calculated using the Scherrer formula
is comparable to the long annealing (1–5 h) applied toward ZnS
[44,45] and ZnxNy [46–48] films to assure full transformation of D ¼ 0:89l=b cos y
ZnSe into the ZnO. Thickness of ZnSe films was varied between ˚
where l is the X-ray wavelength (1.5406 A), b is the FWHM of
300 nm and 1 mm. Since similar results were obtained for all of the
the diffraction peak in radians, and y is the Bragg diffraction
films, only the data for a 700-nm thick film is presented.
angle [50].
Structural and optical properties of the annealed films were
Inset of Fig. 1 is the o scan (rocking curve) of the /0 0 2S peak
investigated using X-ray diffraction (XRD), Raman and photolumi-
that shows out-of-plane mosaic spread and serves a good
nescence (PL) spectroscopies. XRD measurements were carried out
indication of crystalline quality. Although it is broader
in yÀ2y and o modes (to determine out-of-plane orientation and
(FWHM$3.051) than measured for the PLD-grown ZnO films
mosaic spread) using a Scintag X2 diffractometer. Raman measure-
(FWHM$1.451) [51], it is comparable to the value reported for
ments were performed in a backscattering geometry using a
ZnO film heavily doped with P (FWHM$3.211) [52]. Thus, dopant
confocal Raman set up (CRM 200, WITec) equipped with an Ar+ -ion
(As) incorporation could be the reason of the rocking curve
laser (a 488 nm line focused with a 40 Â objective was used for
broadening.
excitation), Actron spectrometer, and a charge-couple device
Fig. 2 is the Raman spectrum collected from the annealed
camera (Andor DV401-BV CCD). PL measurements were performed
ZnSe/GaAs heterostructure. As is expected for a highly textured
at room temperature. Luminescence was excited with a 266 nm line
film measured in a backscattering geometry, only EHigh (435 cmÀ1)
2
of a pulsed Nd:YAG laser (Microchip NanoUV-266, JDS Uniphase),
and ALO (569 cmÀ1) modes are observed [53]. ALO peak is much
1 1
spectrally resolved through a spectrometer (ISA, Edison), and
more intense, when compared with EHigh and has a characteristic
2
detected with a photomultiplier tube.
asymmetric shape with a low-energy tail. An increase in intensity
The morphology was investigated with scanning electron
of an ALO peak was reported for the N-doped ZnO [54] while
1
microscopy (SEM) in the field emission SEM (JEOL 6700F). The
similar asymmetry was recorded for a Sb-doped ZnO [55]. Thus,
surface and in-depth composition analysis was performed by AES
shape and intensity of ALO mode can serve an indication of dopant
1
in the Physical Electronics 670 filed emission scanning Auger
incorporation.
nanoprobe using a 10 KeV and 10 nA electron beam. The samples
In addition to the two lines originating from the ZnO film, three
were 301 tilted with respect to the electron beam during analysis.
more are present at a low-energy side of the spectrum. An intense
Three KV Ar ion sputtering was used for depth profiling.
peak at 292 cmÀ1 is the LO mode from the GaAs substrate. Two
other peaks recorded at 199 and 257 cmÀ1 require more attention.
3. Results and discussion They can be assigned as Eg and A1g modes of the crystalline As [56]
indicating there are nanometer-size As clusters dispersed into the
Fig. 1 is a yÀ2y scan collected from the annealed ZnSe film. ZnO layer. Absence of the As peaks in the XRD spectrum can be
It reveals that the film is a highly textured /0 0 2S ZnO. Such explained by their small volume fraction.
3. ARTICLE IN PRESS
O. Maksimov, B.Z. Liu / Journal of Crystal Growth 310 (2008) 3149–3153 3151
A1g (As) 3.262 eV
7000
Intensity (Arb. Units)
LO (GaAs)
Eg (As)
165 meV
LO (ZnO)
Intensity (Arb. Units)
A1
6000
E2high (ZnO)
3.5 3.0 2.5 2.0
Energy (eV)
Fig. 4. PL spectrum collected at room temperature from the annealed ZnSe/GaAs
heterostructure.
5000
Si KLL
O KLL
200 400 600 Zn LMM
Raman Shift (cm-1)
Intensity (Arb. Units)
Fig. 2. Raman spectrum collected from the annealed ZnSe/GaAs heterostructure. As LMM
C LMM
200 400 600 800 1000 1200 1400 1600
Kinetic Energy (eV)
Fig. 5. AES survery spectrum from the surface of the annealed ZnSe/GaAs
heterostructure.
Fig. 5 shows a surface spectrum acquired prior to sputtering. In
addition to the expected Zn, O, and As, Si and C are found. While C
is from the hydrocarbon contamination unavoidable during the
Fig. 3. SEM image of the annealed ZnSe/GaAs heterostructure.
sample handling, Si contamination may come from the wall of the
quartz tube during annealing. Both C and Si are present only on
Fig. 3 is the SEM micrograph showing the surface of the ZnO the surface. Se or Ga are not observed, indicating these elements
film. It is composed of dense grains with uniform size distribution are either not present or below the detection limit of the
as is expected for a polycrystalline film. technique. The presence of As on the surface indicates possible
Fig. 4 is the PL spectrum collected at room temperature. It is diffusion of As into ZnO, which is confirmed by the depth profile,
dominated by an intense, narrow (FWHM$165 meV) band edge as shown in Fig. 6. It can be seen that As is uniformly distributed
emission line at $3.262 eV. No significant deep-level emission, within the ZnO film (Region I), with a concentration of roughly 8.5
usually originated from the point defects such as Zn vacancies atomic percents. Thermally activated As diffusion from the GaAs
(VZn), Zn interstitials (Zni), and oxygen vacancies (VO), [1] is substrate into the ZnO film was previously detected using
present at $2.4 eV. Thus, although the film is polycrystalline, secondary ion mass spectroscopy (SIMS) [18,30,35,41,57]. Arsenic
individual ZnO grains are close to stoichiometry and of high content depended on the deposition/annealing conditions with up
optical quality. We should note that superior optical properties to 1021 cmÀ3 As atoms usually incorporated into ZnO. By
were reported for the ZnO films obtained via oxidative annealing comparison, our As concentration is higher, probably, due to the
of ZnS [44,45] and Zn3N2 [47]. long annealing time. Since it is above the solubility limit,
4. ARTICLE IN PRESS
3152 O. Maksimov, B.Z. Liu / Journal of Crystal Growth 310 (2008) 3149–3153
80 this layer should have a nanocrystalline or amorphous structure.
Region I Region II Region III Thus, oxidation of ZnSe is not self-limiting process at this film
Approx. concentration (atom%)
thickness (o1 mm) and further oxidation of GaAs substrate occurs.
60 Furthermore, As diffusion into the ZnO layer can be facilitated by
O
the oxidation process through the anion exchange observed in the
Zn
Ga ZnSe/GaAs system [59,60]. We should also mention that Ga2O3
40 As layer was detected at the ZnO/(Cu, In)GaSe2 [61] and ZnO/GaN
interfaces [62,63]. Since much higher temperatures (41000 1C)
are required to promote reaction between ZnO and Ga2O3 [64], we
do not expect formation of more complex phases like ZnGa2O4.
20
Still, GaxOy interfacial layer can prevent use of oxidative annealing
for p-type doping and complicates identification of the origin of
p-type response in the annealed ZnO/GaAs heterostructures. For
0
example, Zn-doped Ga2O3 is a p-type wide band gap semicon-
Sputtering time (s)
ductor (EG$4.8 eV) [65,66]. Then, electroluminescence may be
Fig. 6. Depth profile of the annealed ZnSe(700 nm)/GaAs heterostructure. due to the hole injection from the p-type Ga2O3 into the ZnO.
Quantification is performed by applying instrument-default relative sensitivity While GaxOy interfacial layer does not form in many cases, for
factors to the integrated peak areas. The slight off-stoichiometry may arise either
example when a few mm thick ZnTe is used [35,36], some of the
from the deviation of the instrument-default relative sensitivity factors from the
real values, or from other factors like preferential sputtering.
previous reports of successful p-type doping [18] and device
fabrication [31–34] using As diffusion into the ZnO/GaAs hetero-
structures have to be revisited since very limited structural
characterization is reported. Clearly, SIMS data cannot be used as
the proof of substitutional or interstitial As incorporation into the
ZnO alloy. Instead, As can be present in the nanometer-size
clusters. Finally, detailed structural characterization should be
performed in each case with particular attention being dedicated
dN (E)/dE (a.u.)
toward the ZnO/GaAs interface to exclude interfacial layer
Ga in formation.
Region III
Ga in
Region II 4. Conclusions
We synthesized ZnO films via oxidative annealing of ZnSe/
GaAs heterostructures and investigated their optical and structur-
al properties using a wide range of techniques. Films were highly
textured and exhibited sharp band edge PL at room temperature.
1065 1070 1075 1080 1085 We observed that As diffusion into ZnO layer is accompanied by
Kinetic Energy (eV) the formation of nanometer-size As clusters within the ZnO
film and a GaxOy layer at the ZnO/GaAs interface. Such a layer
Fig. 7. The Ga LMM spectra acquired at different depths from the annealed
complicates identification of the origin of p-type response in the
ZnSe/GaAs heterostructure.
annealed ZnO/GaAs heterostructures and can prevent use of
oxidative annealing for p-type doping.
formation of As clusters, detected using Raman spectroscopy, is
not surprising. Due to the presence of clusters, we cannot judge on
Acknowledgments
the amount of As incorporated into ZnO alloy at the substitutional
(AsO and AsZn) and interstitial (Asi) positions and on the efficiency
of thermal activated diffusion as a doping technique. This work was partially supported by the Department of the
Navy, Office of Naval Research under Grant N00014-07-1-0460.
Fig. 6 also shows that the zinc/oxygen ratio remains constant
($0.65) within the ZnO film in Region I, indicating uniform Any opinions, findings and conclusions or recommendations
oxidation of ZnSe film during annealing. The slight off-stoichio- expressed in this material are those of the authors and do not
metry may arise either from the deviation of the instrument- necessarily reflect the views of the Office of Naval Research.
default relative sensitivity factors from the real values, or from I would also like to thank Dr. Nitin Samarth (Pennsylvania State
other factors like preferential sputtering. Notice that Ga is not University) for providing ZnSe films. The authors acknowledge use
present within the ZnO film, and low concentration of Ga in of facilities at the PSU Site of the NSF NNIN under Agree-
Region I is from the background noise. ment#0335765.
It is interesting to see an interfacial layer (Region II) formed
between the ZnO film and the GaAs substrate, as shown in Fig. 6. References
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