Device Modeling Report




COMPONENTS:
DIODE/ SCHOOTTKY RECTIFIER / STANDARD
PART NUMBER: DE3S6M
MANUFACTURER: SHINDENGEN




              Bee Technologies Inc.



 All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
PSpice model
                                  Model description
 parameter
     IS        Saturation Current
     N         Emission Coefficient
     RS        Series Resistance
    IKF        High-injection Knee Current
    CJO        Zero-bias Junction Capacitance
     M         Junction Grading Coefficient
     VJ        Junction Potential
    ISR        Recombination Current Saturation Value
     BV        Reverse Breakdown Voltage(a positive value)
    IBV        Reverse Breakdown Current(a positive value)
     TT        Transit Time
    EG         Energy-band Gap




          All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
Forward Current Characteristic


Circuit Simulation Result




Evaluation Circuit

                      R1

                      0.01m
                                 U1

   0Vdc    V1



                              DE3S6M




                      0




                All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
Comparison Graph


Circuit Simulation Result




Simulation Result

                              Vfwd(V)            Vfwd(V)
           Ifwd(A)                                                    %Error
                            Measurement         Simulation
                     0.1           0.284               0.282                  -0.70
                     0.2           0.300               0.303                   1.00
                     0.5           0.340               0.341                   0.29
                       1           0.390               0.386                  -1.03
                       2           0.450               0.453                   0.67
                       5           0.625               0.626                   0.16
                      10           0.890               0.889                  -0.11
                      20           1.380               1.383                   0.22




               All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
Junction Capacitance Characteristic


Circuit Simulation Result




Evaluation Circuit


                     V2


                          0Vdc

   V2 = 60      V1
   V1 = 0                                     U1
   TD = 0
   TR = 10ns
   TF = 50ns
   PW = 5us                          DE3S6M
   PER = 10us


                                 0




                     All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
Comparison Graph


Circuit Simulation Result




Simulation Result

                               Cj(pF)             Cj(pF)
          Vrev(V)                                                     %Error
                            Measurement         Simulation
                    0.5           428.000            445.000                   3.97
                      1           345.000            358.000                   3.77
                      2           267.000            270.000                   1.12
                      5           180.000            180.300                   0.17
                     10           130.000            131.600                   1.23
                     20            96.000             95.500                  -0.52
                     60            55.000             57.100                   3.82




               All Rights Reserved Copyright (C) Bee Technologies Inc. 2004

SPICE MODEL of DE3S6M (Standard Model) in SPICE PARK

  • 1.
    Device Modeling Report COMPONENTS: DIODE/SCHOOTTKY RECTIFIER / STANDARD PART NUMBER: DE3S6M MANUFACTURER: SHINDENGEN Bee Technologies Inc. All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
  • 2.
    PSpice model Model description parameter IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current CJO Zero-bias Junction Capacitance M Junction Grading Coefficient VJ Junction Potential ISR Recombination Current Saturation Value BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time EG Energy-band Gap All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
  • 3.
    Forward Current Characteristic CircuitSimulation Result Evaluation Circuit R1 0.01m U1 0Vdc V1 DE3S6M 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
  • 4.
    Comparison Graph Circuit SimulationResult Simulation Result Vfwd(V) Vfwd(V) Ifwd(A) %Error Measurement Simulation 0.1 0.284 0.282 -0.70 0.2 0.300 0.303 1.00 0.5 0.340 0.341 0.29 1 0.390 0.386 -1.03 2 0.450 0.453 0.67 5 0.625 0.626 0.16 10 0.890 0.889 -0.11 20 1.380 1.383 0.22 All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
  • 5.
    Junction Capacitance Characteristic CircuitSimulation Result Evaluation Circuit V2 0Vdc V2 = 60 V1 V1 = 0 U1 TD = 0 TR = 10ns TF = 50ns PW = 5us DE3S6M PER = 10us 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
  • 6.
    Comparison Graph Circuit SimulationResult Simulation Result Cj(pF) Cj(pF) Vrev(V) %Error Measurement Simulation 0.5 428.000 445.000 3.97 1 345.000 358.000 3.77 2 267.000 270.000 1.12 5 180.000 180.300 0.17 10 130.000 131.600 1.23 20 96.000 95.500 -0.52 60 55.000 57.100 3.82 All Rights Reserved Copyright (C) Bee Technologies Inc. 2004